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Turgut Yilmaz

Publications and source records attributed to Turgut Yilmaz.

At least 19 recordsLinked to original sources

High-Temperature ferromagnetism from site-selective filling in (Fe,Ni)$_{6-δ}$GeTe$_2$

The discovery of high-temperature ferromagnetism in the metallic van der Waals (vdW) system Fe$_N$GeTe$_2$ has brought two-dimensional (2D) magnets into technologically relevant temperature scales. Specifically at N = 5, dilution of magnetic moments by nickel substitution counterintuitively achieves a record high Curie temperature of 478~K. Unraveling the origin of this nickel-substitution-induced enhancement is complicated by the compound's structural complexity, coexistent itinerant and local magnetic contributions, and mesoscopic compositional domains. Through coordinated structural and electronic characterization, we identify that the high-T$_C$ magnetic phase arises from a strain-stabilized Fe$_6$GeTe$_2$ nano-precipitate. Combining first-principles calculations and spin- and angle-resolved photoemission spectroscopy (ARPES), we uncover a site-specific electronic landscape in which interior iron atoms primarily host localized moments while the outer iron atoms neighboring the tellurium layers produce spin-polarized itinerant carriers that cross the vdW gap. The large energy cost associated with homogeneous nickel substitution is found to favor the spontaneous precipitation of the crystallographically and electronically ``clean'' high-T$_C$ phase. Finally, we compare metal-rich vdW magnets with binary magnetic alloys, and discuss the unifying roles of nano-precipitates in stabilizing otherwise unattainable bulk phases. Our work provides mechanistic insights into the record-high T$_C$ ferromagnetism in (Fe,Ni)$_{5+δ}$GeTe$_2$, establishing a rigorous foundation for the atomic engineering of vdW magnetic metals informed by direct electronic signatures.

cond-mat.mtrl-sci

Hysteretic Coherence Collapse Across the First Order CDW Transition in 1T-TaS2

The first order phase transition between the nearly commensurate (NC-CDW) and commensurate (C-CDW) charge density wave phases in 1T-TaS2 underpins its exotic electronic behavior, yet the spectroscopic evolution of the low energy electronic structure across this transition remains crucial to understand. Using angle resolved photoemission spectroscopy (ARPES), we investigate the low temperature C-CDW phase, characterized by a flat band commonly associated with the lower Hubbard band and a distinct in-gap state located closer to the Fermi level. Photon energy dependent measurements distinguish these two low energy features through their different spectral weight evolution. Temperature dependent ARPES across heating and cooling cycles reveals that the in-gap state undergoes an abrupt collapse upon heating into the NC-CDW phase and re-emerges sharply upon cooling back into the C-CDW phase. This pronounced thermal hysteresis provides direct spectroscopic evidence of the first order nature of the transition. Furthermore, the disappearance and recovery of the in-gap state closely track the corresponding changes in resistivity, highlighting its intimate connection to the electronic reconstruction across the C-CDW/NC-CDW phase transition.

cond-mat.str-el

Direct Evidence for Robust Bulk Band Gap Across the Charge Density Wave Transition in TiSe2

The mechanism driving the charge density wave (CDW) transition in TiSe2 has been debated for decades, with proposals ranging from an excitonic insulator to a lattice-driven instability. A central question remains whether the transition involves an opening or enhancement of the bulk band gap. Using high-resolution angle-resolved photoemission spectroscopy, we directly track the temperature evolution of the bulk band edges across the CDW transition at TCDW = 200 K. Contrary to the expectation of a gap-opening transition, we find that the size of the fundamental band gap remains constant from the high-temperature normal phase down to 160 K. While the CDW induces clear band-folding signatures and spectral weight redistribution, the underlying band extrema are unperturbed. These results demonstrate that TiSe2 does not undergo a temperature-driven electronic gap opening. Instead, they support a scenario where the transition is governed by a lattice symmetry-breaking reconstruction that folds, but does not gap, the electronic structure of a pre-existing band insulator.

cond-mat.str-el

Equilibrium Stabilization of a Hidden Phase Like Metallic State in 1T-TaS2

Electronic phases that lie outside the equilibrium ground state offer a route to explore competing configurations in correlated materials. In 1T-TaS2, ultrafast excitation accesses a metallic hidden phase that is distinct from the commensurate insulating ground state. Here we use angle-resolved photoemission spectroscopy to show that an equivalent electronic configuration is stabilized in exfoliated intermediate-thickness 1T-TaS2 flakes, where it persists up to room temperature before evolving through a different sequence of electronic transitions. This equilibrium hidden-phase-like state hosts a metallic band with finite Fermi-level spectral weight while retaining the characteristic hybridization gaps associated with the star-of-David band folding. These results establish a platform for controlling competing electronic states in layered materials, with implications for both quantum science and phase change technologies.

cond-mat.str-el

Proximity-induced charge transfer, strain and magnetic exchange in graphene/CrSBr heterostructure

Stacking van der Waals materials provides a powerful route to engineer emergent electronic and magnetic behaviors through proximity-driven interactions. The graphene/CrSBr heterostructure has emerged as a compelling platform in this frontier, exhibiting exotic macroscopic responses-- including uniaxial surface-plasmon-polariton propagation and an unconventional quantum Hall effect-- indicative of strong interfacial electronic and magnetic coupling. However, a microscopic electronic landscape governing these phenomena has remained elusive. Here, we provide a comprehensive spectroscopic characterization of the graphene/CrSBr interface using a combination of angle-resolved photoemission spectroscopy (ARPES), low-energy electron microscopy (LEEM), and density functional theory. We resolve a massive redistribution of interfacial charge that concurrently hole dopes graphene and populates the quasi-one-dimensional spin-polarized conduction band of CrSBr, resulting insulator-to-metal transition in the interfacial CrSBr layer. Furthermore, electronic structure of CrSBr exhibits strong momentum-dependent renormalization distinct from conventional charge doping, and theoretical modeling supported by Raman spectroscopy points to additional interfacial compressive strain. In addition, ARPES reveals a splitting-like feature in the graphene Dirac cone consistent with spin degeneracy lifting, providing possible evidence of magnetic proximity coupling. These findings provide crucial microscopic insight into the system's optical and transport responses and establish graphene/CrSBr as a versatile platform for charge-transfer control, strain-driven band engineering, magnetic-proximity coupling, and directionally confined excitations for next-generation spintronic and nanophotonic devices.

cond-mat.str-el

Emergent surface resonance from charge density wave symmetry breaking in TiSe2

Surface confined electronic states provide a fertile ground for discovering emergent phenomena that have no counterpart in the bulk, offering new routes to manipulate correlations, symmetry breaking, and dimensionality at the atomic scale. Here, we show that charge density wave (CDW) symmetry breaking can yield a surface states in 1T-TiSe2. Micro angle resolved photoemission spectroscopy resolves a sharp, two dimensional surface resonant state (SRS) that emerges within the CDW reconstructed low energy spectrum. The SRS exhibits notable temperature dependence and its spectral weight collapses around 160 K, while CDW transition temperature TCDW is commonly reported as 202 K. Slab DFT+U calculations reproduce a surface localized resonance when CDW folding brings valence and conduction states into near degeneracy, suggesting a correlation tuned, surface selective origin. These results point to a form of correlation-tuned surface resonance in a layered CDW compound and suggest a framework for engineering low dimensional quantum states in van der Waals materials via symmetry breaking and electronic structure tuning.

cond-mat.mtrl-sci

Multiple Topological States in LaAgAs2, a Failed Square-Net Semimetal

The rational design of new materials emerges as an important direction to explore new topological materials, which is based on the understanding of the correlation between crystal and electronic structures. In this paper, we perform a comprehensive study on the crystal and electronic structures in LaAgAs2 through a combination of single-crystal x-ray diffraction (XRD), quantum oscillation, and angle-resolved photoemission spectroscopy (ARPES) experimental measurements, and density functional theory (DFT) calculations. Single-crystal XRD measurements reveal that LaAgAs2 crystallizes into a HfCuSi2-derived structure with the square net distorted into cis-trans chains. Quantum oscillation measurements reveal two frequencies with small effective masses and quasi-two-dimensional (2D) characters. ARPES measurements reveal an electronic structure strikingly different from the square-net-based semimetals, such as LaAgAs2. The Fermi surface is quasi-two-dimensional (2D), with Dirac-like hole pockets at the zone center and a quasi-1D elliptical electron pocket at the zone boundary. Based on the DFT calculations, the measured electronic structure can be well understood regarding the cis-trans distortion, which transforms the two-dimensional square net-derived Dirac bands into quasi-1D trivial bands. Intriguingly, multiple topological states can be identified around the zone center, including a nontrivial Z2 topological surface state and a bulk Dirac state. Our study clarifies the impact of cis-trans distortion and identifies LaAgAs2 as a topological material with multiple topological states near the Fermi level, providing a guideline for intentionally designing new topological materials.

cond-mat.mtrl-sci

Electronic Coherence Evolution at the Nearly Commensurate Incommensurate CDW Boundary of 1T-TaS2

Transition metal dichalcogenides host a variety of charge density wave phases that couple lattice, charge, and correlation effects. In 1T-TaS2, the commensurate and nearly commensurate states are well characterized, yet the transition near 350 K into the incommensurate phase has lacked direct momentum resolved insight. Here we use temperature dependent angle resolved photoemission spectroscopy to track the electronic structure across this transition. We observe a suppression of quasiparticle spectral weight at the Brillouin zone center, coincident with the transport anomaly, but without clear evidence of a full band gap opening. The transition appears to involve momentum dependent redistribution of spectral weight, consistent with a loss of coherence that reshapes the Fermi surface while leaving conduction dispersions largely intact. These results suggest that the nearly commensurate incommensurate transition may not align with a conventional metal insulator transition picture, but rather as an electronic reconstruction driven by loss of coherence. Our work provides new microscopic insight into the resistivity anomaly near room temperature and may guide design principles for collective electronic switching in Transition metal dichalcogenides.

cond-mat.str-el

Intercalation induced quasi-freestanding layer in TiSe$_2$

Angle-resolved photoemission spectroscopy is employed to study the electronic structure of bulk TiSe2 before and after doping with potassium impurities. A splitting in the conduction band into two branches is observed after room-temperature deposition. The splitting energy increases to approximately 130 meV when the sample is cooled to 40 K. One branch exhibits a non-dispersive two-dimensional feature, while other one shows the characteristics of three dimensional bulk band dispersion. Core level spectroscopy suggests that the K impurities predominantly occupy the intercalated sites within the van derWaals gap. The results indicate the formation of a quasi-freestandingTiSe2 layer. Additionally, doping completely suppresses the periodic lattice distortion in the surface region. These findings are further supported by density functional theory calculations, which compare the band structure of monolayer and bulk TiSe2 with experimental data. Thus, the dimensional and intrinsic electronic properties of 1T-TiSe2 can be controlled through the intercalation procedure used in this work.

cond-mat.mtrl-sci

Evolution of the Fermi surface of 1T-VSe$_2$ across a structural phase transition

The electronic origin of the structural transition in 1T-VSe$_2$ is re-evaluated through an extensive angle-resolved photoemission spectroscopy experiment. The components of the band structure, missing in previous reports, are revealed. Earlier observations, shown to be temperature independent and therefore not correlated with the phase transition, are explained in terms of the increased complexity of the band structure close to the Fermi level. Only the overall size of the Fermi surface is found to be positively correlated with the phase transition at 110 K. These observations, quite distant from the charge density wave scenario commonly considered for 1T-VSe$_2$, bring fresh perspectives toward the correct description of structural transitions in dichalcogenides materials.

cond-mat.mtrl-sci

Inconsistencies between experimental and theoretical band structure of TiSe$_2$

Renew interest in the charge density wave phase of TiSe$_2$ stems from the realization of its unique driving mechanism, the so called excitonic insulator phase. Existing claims are motivated by model calculations of the band structure. In this study, angle resolved photoemsision spectroscopy and density functional theory for TiSe$_2$ are directly compared. The substantial discrepancies found between the two descriptions cast serious doubts on the exitonic insulator scenario as the correct physical mechanism underlying the periodic lattice distortion at low temperature. In particular, the formation of a valence-conduction hybridization gap in the bulk band structure is not present in the experimental data. Therefore, the origin of the structural transition in TiSe$_2$ cannot be fully explained within the existing theoretical models.

cond-mat.str-el

Low-Energy Electronic Structure in the Unconventional Charge-Ordered State of ScV$_6$Sn$_6$

Kagome vanadates {\it A}V$_3$Sb$_5$ display unusual low-temperature electronic properties including charge density waves (CDW), whose microscopic origin remains unsettled. Recently, CDW order has been discovered in a new material ScV$_6$Sn$_6$, providing an opportunity to explore whether the onset of CDW leads to unusual electronic properties. Here, we study this question using angle-resolved photoemission spectroscopy (ARPES) and scanning tunneling microscopy (STM). The ARPES measurements show minimal changes to the electronic structure after the onset of CDW. However, STM quasiparticle interference (QPI) measurements show strong dispersing features related to the CDW ordering vectors. A plausible explanation is the presence of a strong momentum-dependent scattering potential peaked at the CDW wavevector, associated with the existence of competing CDW instabilities. Our STM results further indicate that the bands most affected by the CDW are near vHS, analogous to the case of {\it A}V$_3$Sb$_5$ despite very different CDW wavevectors.

cond-mat.str-el

Untangle charge-order dependent bulk states from surface effects in a topological kagome metal ScV$_6$Sn$_6$

Kagome metals with charge density wave (CDW) order exhibit a broad spectrum of intriguing quantum phenomena. The recent discovery of the novel kagome CDW compound ScV$_6$Sn$_6$ has spurred significant interest. However, understanding the interplay between CDW and the bulk electronic structure has been obscured by a profusion of surface states and terminations in this quantum material. Here, we employ photoemission spectroscopy and potassium dosing to elucidate the complete bulk band structure of ScV$_6$Sn$_6$, revealing multiple van Hove singularities near the Fermi level. We surprisingly discover a robust spin-polarized topological Dirac surface resonance state at the M point within the two-fold van Hove singularities. Assisted by the first-principle calculations, the temperature dependence of the $k_z$- resolved ARPES spectrum provides unequivocal evidence for the proposed $\sqrt{3}$$\times$$\sqrt{3}$$\times3$ charge order over other candidates. Our work not only enhances the understanding of the CDW-dependent bulk and surface states in ScV$_6$Sn$_6$ but also establishes an essential foundation for potential manipulation of the CDW order in kagome materials.

cond-mat.str-el

Manipulating Topological Properties in Bi$_2$Se$_3$/BiSe/TMDC Heterostructures with Interface Charge Transfer

Heterostructures of topological insulator Bi$_2$Se$_3$ on transition metal dichalcogenides (TMDCs) offer a new materials platform for studying novel quantum states by exploiting the interplay among topological orders, charge orders and magnetic orders. The diverse interface attributes, such as material combination, charge re-arrangement, defect and strain, can be utilized to manipulate the quantum properties of this class of materials. Recent experiments of Bi$_2$Se$_3$/NbSe$_2$ heterostructures show signatures of strong Rashba band splitting due to the presence of a BiSe buffer layer, but the atomic level mechanism is not fully understood. We conduct first-principles studies of the Bi$_2$Se$_3$/BiSe/TMDC heterostructures with five different TMDC substrates (1T phase VSe$_2$, MoSe$_2$, TiSe$_2$, and 2H phase NbSe$_2$, MoSe$_2$). We find significant charge transfer at both BiSe/TMDC and Bi$_2$Se$_3$/BiSe interfaces driven by the work function difference, which stabilizes the BiSe layer as an electron donor and creates interface dipole. The electric field of the interface dipole breaks the inversion symmetry in the Bi$_2$Se$_3$ layer, leading to the giant Rashba band splitting in two quintuple layers and the recovery of the Dirac point in three quintuple layers, with the latter otherwise only occurring in thicker samples with at least six Bi$_2$Se$_3$ quintuple layers. Besides, we find that strain can significantly affect the charge transfer at the interfaces. Our study presents a promising avenue for tuning topological properties in heterostructures of two-dimensional materials, with potential applications in quantum devices.

cond-mat.mtrl-sci

Non-Fermi liquid behavior in a correlated flatband pyrochlore lattice

Electronic correlation effects are manifested in quantum materials when either the onsite Coulomb repulsion is large or the electron kinetic energy is small. The former is the dominant effect in the cuprate superconductors or heavy fermion systems while the latter in twisted bilayer graphene or geometrically frustrated metals. However, the simultaneous cooperation of both effects in the same quantum material--the design principle to produce a correlated topological flat bands pinned at the Fermi level--remains rare. Here, using angle-resolved photoemission spectroscopy, we report the observation of a flat band at the Fermi level in a 3$d$ pyrochlore metal CuV$_2$S$_4$. From a combination of first-principles calculations and slave-spin calculations, we understand the origin of this band to be a destructive quantum-interference effect associated with the V pyrochlore sublattice and further renormalization to the Fermi level by electron interactions in the partially filled V $t_{2g}$ orbitals. As a result, we find transport behavior that indicates a deviation from Fermi-liquid behavior as well as a large Sommerfeld coefficient. Our work demonstrates the pathway into correlated topology by constructing and pinning correlated flat bands near the Fermi level out of a pure $d$-electron system by the combined cooperation of local Coulomb interactions and geometric frustration in a pyrochlore lattice system.

cond-mat.str-el

Evolution of highly anisotropic magnetism in the titanium-based kagome metals LnTi$_3$Bi$_4$ (Ln: La...Gd$^{3+}$, Eu$^{2+}$, Yb$^{2+}$)

Here we present the family of titanium-based kagome metals of the form LnTi$_3$Bi$_4$ (Ln: La...Gd$^{3+}$, Eu$^{2+}$, Yb$^{2+}$). Single crystal growth methods are presented alongside detailed magnetic and thermodynamic measurements. The orthorhombic (Fmmm) LnTi$_3$Bi$_4$ family of compounds exhibit slightly distorted titanium-based kagome nets interwoven with zig-zag lanthanide-based (Ln) chains. Crystals are easily exfoliated parallel to the kagome sheets and angular resolved photoemission (ARPES) measurements highlight the intricacy of the electronic structure in these compounds, with Dirac points existing at the Fermi level. The magnetic properties and the associated anisotropy emerge from the quasi-1D zig-zag chains of Ln, and impart a wide array of magnetic ground states ranging from anisotropic ferromagnetism to complex antiferromagnetism with a cascade of metamagnetic transitions. Kagome metals continue to provide a rich direction for the exploration of magnetic, topologic, and highly correlated behavior. Our work here introduces the LnTi$_3$Bi$_4$ compounds to augment the continuously expanding suite of complex and interesting kagome materials.

cond-mat.mtrl-sci

Multi band Fermi surface in 1T-VSe2 and its implication for charge density wave phase

Here, our angle resolved photoemission spectroscopy experiment reveled that the surface band structure of the 1T-VSe2 host electronic states that was not predicted or probed before. Earlier claims to support charge density wave phase can be all explained in terms of these new findings. Its Fermi surface found to be not gaped at any point of the Brillouin zone and warping effect on the electronic structure, attributed to the lattice distortion previously, is due to the different dispersion of the multiple bands. Based on these new findings and interpretations, charge density wave induced modification on the electronic structure of 1T-VSe2 needs to be reconstructed in the future studies.

cond-mat.mtrl-sci

Spectroscopic evidence of high temperature superconductivity in VSe2

High-resolution angle-resolved photoemission experiments reveal subtle modifications of the surface electronic structure of VSe2. Most remarkably, we show that superconductivity can be induced in VSe2 by the right selection of substrate and growth parameters. Evidence for the superconducting state comes from the simultaneous detection of spectral kink, quasiparticle peak, Fermi gap, and their evolution with the temperature. The observation of Bogoliubov-like back-bending bands at low temperatures, signaling electron-hole pairing, further supports the presence of superconductivity in this system. The photoemission experiment also provides evidence for a formation of a pseudogap state at high temperatures, characterized by the progressive quenching of the quasiparticle peak feature coexisting with a persistent gap at the Fermi level, a behavior reminiscent of high-Tc superconductors. We attributed the origin of superconductivity in these VSe2 films to a modified Fermi surface combined with the formation of van Hove singularity points with a binding energy corresponding to the chemical potential of the system. Although Tc cannot be accurately determined from photoemission data, observations based on the survival temperature of the quasiparticle peak suggest that Tc could be as high as 100 ? 5 K and substantially higher than previous reports for any transition metal dichalcogenides.

cond-mat.supr-con