arXiv subjects

Tushar Sanjay Karnik

Publications and source records attributed to Tushar Sanjay Karnik.

5 recordsLinked to original sources

arXiv2026

Ultra-broadband integrated optical parametric amplifier for quantum sensing

Although thin-film lithium niobate (TFLN) facilitates efficient signal generation and nonlinear and quantum interactions, the realization of optical parametric amplification (OPA) that can provide simultaneous ultra-broadband and high-gain operation in an integrated chip continues to pose a challenge. Here we demonstrate continuous-wave-pumped OPA in an X-cut MgO-doped, dispersion-engineered, and adaptively-poled TFLN waveguide of 1.6 cm length, achieving a flat-top profile covering a 450 nm-wide optical wavelength window, corresponding to a 3-dB gain bandwidth of about 56 THz. Among reported TFLN platforms, our device exhibits the broadest 3-dB gain bandwidth. The same device can be pumped either directly at visible wavelengths through second-order x(2) interactions or in the telecom band through cascaded x(2) processes, the latter eliminating the need for a high-power visible pump laser. We achieve maximum gains of 8.87 +- 0.39 dB and 10.79 +- 0.43 dB at on-chip pump powers of 74 mW and 170 mW for the direct and cascaded schemes, respectively. We further directly probe OPA gain across the 1650-1900 nm wavelength range, where experimental gain measurements have remained scarce. With a normalized on-chip gain of 1.21 dB per W per mm, our device sets a new benchmark among reported cascaded x(2) nonlinear processes. This work advances the realization of integrated optical parametric amplifiers, offering high efficiency, robust gain, ultra-broadband bandwidth, and continuous-wave operation, thereby enabling new capabilities for next-generation quantum sensing and photonic systems.

physics.optics↗

arXiv2026

80 Channel Photon Pair Source from a Thin-Film Lithium Niobate Racetrack Microresonator

Nanophotonic platforms have multiple properties and features desirable for producing correlated photon pairs. In these platforms, spontaneous parametric down-conversion (SPDC) and spontaneous four-wave-mixing (SFWM) have been used to achieve photon pair production. By placing the nonlinear region in a resonant cavity, the source obtains an enhanced nonlinear interaction and naturally filters out photons by frequency according to the cavity linewidth. Among various platforms, X-cut thin-film lithium niobate (TFLN) stands out for its strong second-order optical nonlinearity ($χ^{(2)}$) and access to a strong platform for modulating light. Although previously demonstrated, present sources are limited in their photon pair channel availability, limiting the potential of quantum applications in quantum information processing, communication, and sensing that can scale in robustness by having access to multiple photon pair channels. To this end, we demonstrate a photon pair source on X-cut TFLN with 80 measured photon pair channels spanning the C and L optical bands with a frequency spacing of 49.5 GHz between photons. We characterize the second-order correlation function and pair generation rate (PGR) of 80 channels, the highest number of channels demonstrated to date, and achieve a pair generation of 125.7 kHz / μW after accounting for the cavity's escape efficiency. We also demonstrate heralded single photon operation by calculating a heralded auto-correlation dip of 0.0544 $\pm$ 0.0054 with 2.2 mW of on-chip pump power. These findings demonstrate the promise of X-cut TFLN as a strong platform for quantum optical applications.

physics.optics↗

arXiv2026

18-dB on-chip vacuum squeezing in an adaptively poled lithium niobate waveguide

Quantum squeezed states of light can enhance measurement sensitivity beyond classical limits and enable quantum information processing, but scalable low-loss sources remain challenging. We demonstrate continuous-wave quantum squeezing on a chip, achieving 18 dB of squeezing and 20 dB of anti-squeezing at 1570 nm in a 1.6-cm traveling-wave adaptively poled thin-film lithium niobate waveguide. A distributed model independently determines facet losses, phase noise, and nonlinear interaction strength without prior assumptions, enabling rigorous inference of on-chip performance. We estimate a 95% confidence interval of [-18.96, -17.25] dB squeezing and [19.96, 21.35] dB anti-squeezing. These values represent the highest squeezing reported for any integrated photonic platform and the first assumption-free statistical validation of integrated squeezing performance. Our results establish thin-film lithium niobate as a high-performance, scalable platform for continuous-variable quantum sensing, communications, and photonic computing.

physics.optics↗

arXiv2026

Quantum squeezing in an all-resonant periodically poled lithium niobate microresonator

Quantum noise limits the sensitivity of optical measurements, but squeezed states of light enable quantum-enhanced metrology, sensing, and information processing. Most on-chip squeezed-light sources rely on Kerr ($χ^{(3)}$) nonlinearities, remain limited by pump power and excess loss constraints. Quadratic ($χ^{(2)}$) platforms instead provide stronger parametric interactions, lower pump power requirements, and greater spectral engineering flexibility. Here, we demonstrate strong, broadband squeezed-light generation on a thin-film lithium niobate (TFLN) photonic chip using a dual-resonant optical parametric amplifier implemented in a single periodically poled LN (PPLN) microresonator. Near-full-depth domain inversion is achieved simultaneously with highly over-coupled resonances, exhibiting escape efficiencies exceeding 90% and intrinsic quality factors above 2.5 million in a 0.6 mm$^2$ X-cut TF-PPLN resonator, enabling efficient squeezing at 1587 nm when pumped at 793.5 nm. Operating in the continuous-wave regime, we directly measure -0.81 dB of squeezing below the shot-noise limit with a pump power of 27 mW, together with +4.29 dB of anti-squeezing. From these measurements, we infer an on-chip squeezing level of -7.52 dB $\pm$ 0.22 dB (95% confidence interval: [-7.96,-7.10] dB), and an on-chip anti-squeezing level of +9.62 dB $\pm$ 0.25 dB. We demonstrate single-mode squeezing at degeneracy with a squeezed-light spectrum exceeding 10.3 THz. This work reports the highest squeezing ratio among integrated $χ^{(2)}$ cavity platforms and the first quasi-phase matched, fully resonant $χ^{(2)}$ cavity squeezer on chip, establishing a scalable route to fully integrated power-efficient squeezed-light sources for quantum-enhanced sensing and metrology.

physics.optics↗

arXiv2024

Electrically Tuning Quasi-Bound States in the Continuum with Hybrid Graphene-Silicon Metasurfaces

Metasurfaces have become one of the most prominent research topics in the field of optics owing to their unprecedented properties and novel applications on an ultrathin platform. By combining graphene with metasurfaces, electrical tunable functions can be achieved with fast tuning speed, large modulation depth and broad tuning range. However, the tuning efficiency of hybrid graphene metasurfaces within the short-wavelength infrared (SWIR) spectrum is typically low because of the small resonance wavelength shift in this wavelength range. In this work, through the integration of graphene and silicon metasurfaces that support quasi-bound states in the continuum (quasi-BIC), we experimentally demonstrate significant transmittance tuning even with less than 30 nm resonance wavelength shift thanks to the high quality-factor of quasi-BIC metasurfaces. The tunable transmittance spectrum was measured using Fourier Transform Infrared Spectroscopy (FTIR) with a modified reflective lens to improve the accuracy, and the electrical tuning was realized utilizing the cut-and-stick method of ion gel. At the wavelength of 3.0 um, the measured change of transmittance T_max-T_min and modulation depth (T_max-T_min)/T_max can reach 22.2% and 28.9%, respectively, under a small bias voltage ranging from -2 V to +2 V. To the best of our knowledge, this work is the first experimental demonstration of tunable graphene/quasi-BIC metasurfaces, which have potential applications in optical modulation, reconfigurable photonic devices, and optical communications.

physics.optics↗