arXiv subjects

Tzu-Hsuan Hsu

Publications and source records attributed to Tzu-Hsuan Hsu.

At least 19 recordsLinked to original sources

arXiv2026

High-Velocity Whip-Mode Microresonator in LTOI Unimorph: Measurement Methodology and Large-Signal Characterization

This paper presents the design, characterization, and large-signal measurement methodology of a high-order whip-mode flexural microresonator on a lithium tantalate-on-insulator (LTOI) unimorph platform. A tapered cantilever concentrates kinetic energy at the free tip through a structural velocity amplification effect, with a targeted whip mode at 9.175 MHz exhibiting a measured Q of 691 in air. The results indicate a substantially reduced susceptibility to viscous damping at high modal frequencies. In-air large-signal testing on a separate device confirms tip velocities up to 20 m/s before the reliable measurement range of the laser Doppler vibrometer (LDV) at the tapered tip is exceeded, while the device itself sustains drive levels up to 240 Vpp before failure. Transitioning to vacuum reveals photothermal-induced static bending of the LTOI cantilever under LDV laser illumination, an effect that prohibits direct velocity measurement for these resonators. Hence, it motivates an indirect extraction methodology to be implemented. In this work, a 3.85 times base-to-tip geometric amplification factor, independently calibrated at low drive, is applied to base velocity measurements to infer tip velocity under large-signal conditions. Using this approach with narrowband chirp excitation, a maximum extracted tip velocity of 58.9 m/s is obtained at 192 Vpp, with spectral analysis of the base velocity placing a conservative lower bound of 36.2 m/s on this estimate. Large-signal failure-mode analysis identifies Pt/Au electrode melting at 210 Vpp as the current velocity ceiling. These results suggest that geometric amplification in high-order flexural modes offers a viable pathway toward the high proof-mass velocities targeted for next-generation MEMS inertial sensors.

eess.SP↗

arXiv2026

Toward Ku-Band Surface Acoustic Wave Delay Lines on AlScN-on-Diamond with Decoupled Phase and Group Velocities

This work reports surface acoustic wave (SAW) acoustic delay lines (ADLs) on an aluminum scandium nitride (AlScN) on diamond platform operating in the X band and approaching the Ku band. The large acoustic-velocity contrast between the AlScN film and the diamond substrate produces a strongly dispersive Sezawa branch that decouples the phase velocity from the group velocity. Delay lines with a 1 $μ$m wavelength show a Sezawa passband at 9.55 GHz with a fractional bandwidth of 1.05%, a propagation loss of 0.094 dB per wavelength, a propagation-limited quality factor of 465, and a group velocity of 5979 m/s, while co-fabricated resonators give a phase velocity of 9560 m/s, a ratio of about 1.6. Scaling the wavelength to 0.5 $μ$m moves the passband to 16.5 GHz with a fractional bandwidth of 0.7%. The platform therefore reaches an operating frequency about 1.5 times higher than AlScN on sapphire at the same lithographic pitch while preserving group delay per unit length.

eess.SP↗

arXiv2026

Bimorph Lithium Niobate Thickness-Shear Overtone Film Bulk Acoustic Resonator

High quality factor ($Q$) and overtone operation enable narrow-linewidth acoustic devices with multiple discrete frequencies in a single cavity. Maintaining both high $Q$ and sufficient electromechanical coupling at higher mode orders remains challenging. Here, we demonstrate a bimorph periodically poled piezoelectric film (P3F) lithium niobate (LN) platform for high-order thickness-shear (TS) overtone excitation. The device comprises a bonded 80-$μ$m-thick single-crystal X-cut LN bimorph with opposite polarizations, patterned top and floating bottom electrodes, and a suspended air cavity. The P3F configuration mitigates charge cancellation from the alternating stress distribution of higher-order TS modes, enabling measurable coupling across a broad sequence of overtones. The thick LN acoustic cavity and increasingly confined high-order mode profiles support low-loss operation. Measured TS overtones extend to 1.75 GHz. At room temperature, representative overtones at 0.77 and 0.89 GHz exhibit 3-dB $Q$ values of 11,338 and 11,917, corresponding to $fQ$ products of $8.74\times10^{12}$ and $1.06\times10^{13}$ Hz, respectively. Cooling from 297 to 12 K systematically enhances $Q$, yielding a peak 3-dB $Q$ of 20,507 at 779 MHz and a maximum $fQ$ product of $1.98\times10^{13}$ Hz at 1.379 GHz. These results establish bimorph P3F LN as a promising platform for high-$Q$, frequency-scalable micro-acoustic resonators in the sub-GHz and low-GHz regimes.

physics.app-ph↗

arXiv2026

Gradient Residual Stress in Transferred Thin-Film Lithium Niobate and Its Compensation Using Periodically Poled Piezoelectric Bilayers

In this work, we experimentally investigate the gradient stress (sigma1) in 128 deg Y-cut transferred thin film lithium niobate (TFLN) films with thicknesses from 100 to 460 nm using cantilever curvature analysis. The results reveal a strong dependence of sigma1 on both crystallographic orientation and film thickness, with stress-free orientations at approximately 55 deg and 125 deg for 220-460 nm films, shifting to approximately 20 deg and 160 deg for 100 nm films. The extracted normalized sigma1 ranges from -0.1 to 3.4 MPa/nm (100 nm), -0.8 to 0.34 MPa/nm (220 nm), and -0.12 to 0.08 MPa/nm (460 nm), indicating a pronounced thickness-dependent through-thickness stress gradient. Finite element simulations show excellent agreement with the measurements, validating the curvature-based extraction method and confirming that sigma1 originates from an orientation-dependent residual stress gradient. To mitigate this effect, a bilayer TFLN structure with opposite crystallographic orientations, forming a periodically poled piezoelectric film (P3F), is investigated, enabling partial cancellation of sigma1. A 90/110 nm P3F bilayer reduces the equivalent normalized sigma1 to -0.4 to -0.04 MPa/nm, resulting in significantly reduced deformation. These results establish gradient stress engineering through orientation, thickness, and bilayer design as an effective strategy for achieving mechanically stable and scalable TFLN microelectromechanical systems (MEMS) devices.

physics.app-ph↗

arXiv2026

Emergence of millimeter-wave resonances in self-assembled ferroelectric metamaterials

Resonators are a key component in modern communications and computing. As demand and technological advances push component requirements into the terahertz regime, there is significant research devoted to the search for resonances at these frequencies. While uniform solid-state materials usually do not intrinsically feature resonances in this frequency range, self-assembled periodic arrays of ferroelectric nanodomains may provide an engineering route to design millimeter-wave properties. Here, we utilize prototypical dielectric-ferroelectric SrTiO3/PbTiO3 superlattices to robustly design periodic ferroelectric nano-scale domains. Phase field simulations predict an emergent domain breathing mode in complex polar textures and state-of-the-art millimeter-wave characterization shows evidence for such emergent resonances up to hundreds of GHz. Complex polar textures in these superlattices lead to emergent piezoelectric properties that also result in millimeter-wave resonances, which are predicted by second principles methods and confirmed by direct measurement. The principles investigated in this work suggest a new modality for ferroelectrics in the design of millimeter-wave electronics.

cond-mat.mtrl-sci↗

arXiv2026

Q-Enhanced SH-SAW Ladder Filter in Thin-Film Lithium Tantalate Using Bartlett Apodization

Shear-horizontal surface acoustic wave (SH-SAW) filters have shown strong potential for low-loss, compact, GHz-frequency RF front ends. In this work, we demonstrate a high-performance SH-SAW filter design at 4.35 GHz utilizing 42°Y-cut thin-film lithium tantalate (LiTaO3) on a SiO2/Si platform. Despite the limitations of thin aluminum metallization and its associated ohmic losses, we show that implementing a Bartlett window apodization technique, primarily intended for in-band spurious-mode suppression, yields a significantly improved quality factor (Q) of 1,522 from 688 in conventional interdigitated SH-SAW resonators. This enhancement enables a third-order ladder filter at 4.3 GHz with an insertion loss of 1.59 dB, compared with 1.65 dB for a conventional SH-SAW filter. In addition, our filter with apodized resonator designs achieves a 3 dB fractional bandwidth (FBW) of 3.24% and out-of-band rejection exceeding 14 dB, all within a compact footprint of 0.4 mm2. These results suggest that apodized thin-film LiTaO3 designs are highly promising for low-loss, miniaturized, cost-effective radio frequency acoustic solutions in next-generation communication and sensing applications.

eess.SP↗

arXiv2026

Spurious-Free Lithium Niobate Bulk Acoustic Wave Resonator with Grounded-Ring Electrode

High-performance piezoelectric resonators are promising energy storage elements for piezoelectric power conversion due to their compact footprint and low loss at frequencies where conventional magnetic components become bulky and inefficient. However, their practical use is often limited by the trade-off between a high electromechanical coupling coefficient (k^2) for wide-band operation and the emergence of spurious acoustic modes that limit the resonators' inductive bandwidth. This work reports a spurious-free thickness-extensional (TE)-mode bulk acoustic wave (BAW) resonator in single-crystal lithium niobate (LN) based on a grounded-ring electrode architecture. The proposed structure is analyzed through simulation and experimentally validated using electrical characterization and laser Doppler vibrometry (LDV). The results show that the grounded ring modifies the effective boundary conditions of the acoustic device, enabling a piston-like modal response that suppresses lateral spurious modes across the inductive band. The demonstrated device operates at 10.14 MHz and achieves an electromechanical coupling coefficient of 29.6%, a maximum in-band Bode quality factor (Q_Bode) of 5230, and a figure of merit (FoM, Q*k^2) of 1548. These results establish the grounded-ring TE-mode LN BAW resonator as a practical platform for piezoelectric power conversion and a broader design approach for realizing high-performance spurious-free acoustic resonators.

eess.SY↗

arXiv2026

Single-Crystal AlN Wafer-Based Bulk Acoustic Resonators for Piezoelectric Power Conversion

In this work, we demonstrate the first single-crystal aluminum nitride (AlN) wafer-based thickness-extensional (TE) mode bulk acoustic resonator for piezoelectric power conversion. The device exhibits a high series resonance 3-dB quality factor ($Q$) of 1677 and an electromechanical coupling coefficient ($k^2$) of 6.1%, highlighting the strong potential of AlN resonators for efficient power conversion. To suppress in-band spurious modes, a grounded ring structure is proposed and experimentally validated. The measured frequency-domain impedance response shows a spurious suppression of the spectrum above the resonance at 13.52 MHz. A comparative analysis with prior PZT, LN, and LT-based resonators indicates that AlN achieves a competitive figure of merit and $f \cdot Q$ product, while its material thermal conductivity is orders of magnitude higher than that of the incumbent piezoelectric power-converter resonators. The power-handling capability is expected to be superior in AlN single-crystal wafers and will be demonstrated in ongoing experiments. These results suggest that AlN offers a promising platform for compact, robust piezoelectric power converters and next-generation power electronic systems.

physics.app-ph↗

arXiv2026

Bimorph Lithium Niobate Piezoelectric Micromachined Ultrasonic Transducers

Piezoelectric micromachined ultrasonic transducers (PMUTs) are widely utilized in applications that demand mechanical resilience, thermal stability, and compact form factors. Recent efforts have sought to demonstrate that single-crystal lithium niobate (LN) is a promising PMUT material platform, offering high electromechanical coupling (k2) and bidirectional performance. In addition, advances in LN film transfer technology have enabled high quality periodically poled piezoelectric films (P3F), facilitating a bimorph piezoelectric stack without intermediate electrodes. In this work, we showcase a bimorph PMUT incorporating a mechanically robust, 20 $μ$m thick P3F LN active layer. We establish the motivation for LN PMUTs through a material comparison, followed by extensive membrane geometry optimization and subsequent enhancement of the PMUT's k2. We demonstrate a 775 kHz flexural mode device with a quality factor (Q) of 200 and an extracted k2 of 6.4\%, yielding a high transmit efficiency of 65 nm/V with a mechanically robust active layer. We leverage the high performance to demonstrate extreme-temperature resilience, showcasing stable device operation up to 600 $^\circ$C and survival up to 900 $^\circ$C, highlighting LN's potential as a resilient PMUT platform.

cond-mat.mtrl-sci↗

arXiv2026

Phononic Combs in Lithium Niobate Acoustic Resonators

Frequency combs consist of a spectrum of evenly spaced spectral lines. Optical frequency combs enable technologies ranging from timing, LiDAR, and ultra-stable signal sources. Microwave frequency combs are analogous to optical frequency combs, but often leverage electronic nonlinearity for comb generation. Generating microwave frequency combs using piezoelectric mechanical resonators would enable this behavior in a more compact form factor, thanks to the shorter acoustic wavelengths. In this work, we demonstrate a microwave frequency comb leveraging thermal nonlinearity in high quality factor ($Q$) overmoded acoustic resonators in thin film lithium niobate. By providing input power at 257 MHz, which is the sum frequency of two acoustic modes at 86 MHz and 171 MHz, we generate parametric down conversion and comb generation. We explore the nonlinear mixing regimes and the associated conditions for comb generation. Comb spacing is observed to vary significantly with drive frequency and power, and its general behavior is found to rely heavily on initial conditions. This demonstration showcases the potential for further improvement in compact and efficient microwave frequency combs, leveraging nonlinear acoustic resonators.

physics.app-ph↗

arXiv2026

19.3 GHz Acoustic Filter with High Close-in Rejection in Tri-layer Thin-Film Lithium Niobate

Acoustic filters are preferred front-end solutions at sub-6 GHz due to their superior frequency selectivity compared to electromagnetic (EM) counterparts. With the ongoing development of 5G and the evolution toward 6G, there is a growing need to extend acoustic filter technologies into frequency range 3 (FR3), which spans 7 to 24 GHz to accommodate emerging high-frequency bands. However, scaling acoustic filters beyond 10 GHz presents significant challenges, as conventional platforms suffer from increased insertion loss (IL) and degraded out-of-band (OoB) rejection at higher frequencies. Recent innovations have led to the emergence of periodically poled piezoelectric lithium niobate (P3F LN) laterally excited bulk acoustic resonators (XBARs), offering low-loss and high electromechanical coupling performance above 10 GHz. This work presents the first tri-layer P3F LN filter operating at 19.3 GHz, achieving a low IL of 2.2 dB, a 3-dB fractional bandwidth (FBW) of 8.5%, and an impressive 49 dB close in rejection. These results demonstrate strong potential for integration into FR3 diplexers.

eess.SP↗

arXiv2026

62.6 GHz ScAlN Solidly Mounted Acoustic Resonators

We demonstrate a record-high 62.6 GHz solidly mounted acoustic resonator (SMR) incorporating a 67.6 nm scandium aluminum nitride (Sc0.3Al0.7N) piezoelectric layer on a 40 nm buried platinum (Pt) bottom electrode, positioned above an acoustic Bragg reflector composed of alternating SiO2 (28.2 nm) and Ta2O5 (24.3 nm) layers in 8.5 pairs. The Bragg reflector and piezoelectric stack above are designed to confine a third-order thickness-extensional (TE) bulk acoustic wave (BAW) mode, while efficiently transducing with thickness-field excitation. The fabricated SMR exhibits an extracted piezoelectric coupling coefficient (k2) of 0.8% and a maximum Bode quality factor (Q) of 51 at 63 GHz, representing the highest operating frequency reported for an SMR to date. These results establish a pathway toward mmWave SMR devices for filters and resonators in next-generation RF front ends.

eess.SP↗

arXiv2025

Thermal Endurance of Suspended Thin-Film Lithium Niobate up to 800 °C

The need for high-temperature piezoelectric microelectromechanical systems (MEMS) requires pushing piezoelectric platforms to their thermal limits. In harsh thermal environments, piezoelectric MEMS devices are expected to sustain severe damage because of material degradation and coefficient of thermal expansion (CTE) mismatches between the functional layers and the carrier wafer. This paper investigates the thermal endurance of the suspended thin-film lithium niobate (LN) platform by observing the structural integrity and performance of acoustic Lamb wave resonators after annealing rounds at increasing temperatures, with a focus on temperatures between 550 $^\circ$C and 800 $^\circ$C, with 50 $^\circ$C temperature increments. Fundamental symmetric (S0) mode acoustic resonators are fabricated on 600 nm stoichiometric LN (sLN) with 40 nm thick platinum top electrodes and a thin titanium adhesion layer. After each annealing round, changes in the devices' resonant frequency and quality factor (\emph{Q}) are quantitatively studied. The devices and material stack are further analyzed with resistivity structures, optical microscope images, and X-ray diffraction (XRD) measurements. The results provide valuable insights into the design and material selection necessary to optimize the suspended thin-film LN platform for high temperatures. Understanding the thermal limit of the platform enables its use for sensors, actuators, resonators, and potentially other thin-film LN microsystems, e.g, photonics, electro-optical, and acousto-optical systems in harsh thermal environments.

physics.app-ph↗

arXiv2025

Radial Mode Lithium Niobate Rosen Transformer

In this work, we demonstrate the first two-port radial-mode Rosen transformer based on 36$^{\circ}$Y-cut lithium niobate (LN) for piezoelectric power conversion. The device achieves a high transformation ratio (TF) of 16, a high electromechanical coupling factor ($k^2$) of 16.8\% and a quality factor ($Q$) of 2500, yielding an outstanding figure of merit (FoM = $Q \cdot k^2$) of 420. The fabricated transformer features a large effective turns ratio of 16 and delivers an open-circuit voltage gain of 45.56 (unloaded) and 40.57 with a load of 1 M$Ω$ in parallel with 0.1 pF, validating its ability to provide efficient passive voltage amplification. An equivalent circuit model was developed to accurately fit both finite-element-simulated and measured admittance spectra, enabling reliable parameter extraction. These results establish LN radial-mode resonators as a promising high-performance, magnetic-less transformer platform.

physics.app-ph↗

arXiv2025

Residual Stress Anisotropy In Thin-Film Lithium Niobate For Stress-Managed MEMS

In this work, we present the first experimental study of residual stress and post-release beam deflection in 128-degree Y-cut thin-film lithium niobate (TFLN) on Si, revealing pronounced stress anisotropy with in-plane orientation. Using optical profilometry with curvature fitting, we extract the stress gradient (sigma1) and generate orientation-resolved stress maps across multiple film thicknesses (100 nm, 220 nm, and 460 nm). For films in the 220 to 460 nm range, we identify stress-free in-plane orientations near approximately 55 degrees and 125 degrees, enabling extremely flat suspended beams. In contrast, ultra-thin 100 nm films exhibit shifted stress-free orientations near approximately 20 degrees and 160 degrees. Leveraging these orientations, we demonstrate very long suspended beams up to 2 cm in length, 10 micrometers in width, and 460 nm in thickness without collapse. These results establish in-plane stress anisotropy and thickness selection in TFLN as practical design levers for mechanically stable, scalable, and stress-managed microelectromechanical systems (MEMS).

physics.app-ph↗

arXiv2025

An 11.7-GHz ScAlN FBAR Filter: Case Study on Scaling Limits and Challenges

This paper reports an 11.7 GHz compact 50 ohm ladder filter based on single layer Scandium Aluminum Nitride (ScAlN) film bulk acoustic resonators (FBARs) with platinum (Pt) electrodes, and uses it as a quantitative case study of the limits encountered when directly scaling to higher frequencies. The measured filter achieves a 3 dB fractional bandwidth (FBW) of 4.0% and an out of band rejection greater than 23.1 dB, with a minimum insertion loss (IL) of 6.8 dB. We analyze the origin of this performance through a quantitative framework: (1) a loss decomposition study, (2) frequency shift sensitivity that explains the discrepancy between simulated and measured center frequency, (3) FBW sensitivity to series shunt separation and port impedance, and (4) stress limited aperture that constrains device size. The results establish a realistic, fabricable baseline for directly scaled single layer ScAlN FBAR filters and outline materials, electrode, and stress management directions toward lower loss mmWave acoustic filters.

physics.app-ph↗

arXiv2025

High-Q Millimeter-Wave Acoustic Resonators in Thin-Film Lithium Niobate Using Higher-Order Antisymmetric Modes

This letter presents miniature millimeter wave (mmWave, above 30 GHz) acoustic resonators based on a single-layer thin-film lithium niobate (LN) platform. More specifically, we present high performance third-order antisymmetric (A3) mode laterally excited bulk acoustic resonators (XBAR). Compared to prior demonstrations, the proposed platform features a compact footprint due to a smaller lateral wavelength and aperture. We showcase an A3 mode device operating at 39.8 GHz with a high extracted electromechanical coupling (k^2) of 4%, a high 3-dB series resonance quality factor (Q_s) of 97, and a high 3-dB anti-resonance quality factor (Q_p) of 342, leading to a figure of merit (FoM=k^2*Q_p) of 13.7 with a footprint of 32x44 micron^2. To demonstrate frequency scalability, the piezoelectric film thickness is varied while keeping the device layout. As a result, we present a multitude of high-performance devices covering a wide frequency range of 30-50 GHz, validating the proposed XBAR design at mmWave.

physics.app-ph↗

arXiv2025

Thin-film scandium aluminum nitride bulk acoustic resonator with high Q of 208 and K2 of 9.5% at 12.5 GHz

This work describes sputtered scandium aluminum nitride (ScAlN) thin-film bulk acoustic resonators (FBAR) at 12.5 GHz with high electromechanical coupling (k2) of 9.5% and quality factor (Q) of 208, resulting in a figure of merit (FoM, Qk2) of 19.8. ScAlN resonators employ a stack of 90 nm thick 20% Sc doping ScAlN piezoelectric film on the floating bottom 38 nm thick platinum (Pt) electrode to achieve low losses and high coupling toward centimeter wave (cmWave) frequency band operation. Three fabricated and FBARs are reported, show promising prospects of ScAlN-Pt stack towards cmWave front-end filters.

physics.app-ph↗