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Tzu-Kan Hsiao

Publications and source records attributed to Tzu-Kan Hsiao.

7 recordsLinked to original sources

Radio frequency readout and control of Ge/SiGe hole spin qubits with a global accumulation gate

Hole spin qubits in undoped Ge/SiGe quantum well structures have advanced rapidly in performance and scalability. However, stringent multi-layer patterning and overlay requirements of conventional overlapping-gate devices create a bottleneck for academic proof-of-concept experiments involving few-qubit devices. Here we present fabrication and measurements of Ge/SiGe spin qubit devices with a global accumulation gate and single-layer depletion fine gates, which substantially reduce fabrication complexity. With careful design of the gate-2DHG capacitance, we demonstrate RF-based single-shot spin readout and coherent control of two single-spin qubits. We also characterize the spin coherence times and exchange tunability, which are similar to those reported in recent overlapping-gate Ge/SiGe spin qubit devices. By simplifying fabrication without sacrificing performance, our approach offers a more accessible device design for spin-based quantum technology research.

cond-mat.mes-hall↗

Ge hole spin control using acoustic waves

Germanium hole spin qubits based on strained Ge/SiGe quantum well have attracted much research attention due to the strong spin-orbit coupling. In particular, the strain dependence of the heavy-hole--light-hole mixing and thus the $g$-tensor anisotropy offer unique opportunities for acoustic driving and spin-phonon coupling. In this work we numerically simulate the coherent control of a Ge hole spin using surface acoustic waves. The periodic strain dynamically modulates the $g$-tensor matrix and causes fast spin rotation under a small acoustic amplitude. Moreover, we show a strong anisotropy and confinement dependence of the Rabi frequency coming from the phase-shifted longitudinal and shear strain components. Our work lays the foundations for acoustic-driven spin control and spin-phonon coupling using Ge hole spin qubits.

cond-mat.mes-hall↗

Site-resolved magnon and triplon dynamics on a programmable quantum dot spin ladder

Quasi-particle dynamics in interacting systems in the presence of disorder challenges the notion of internal thermalization, but proves difficult to investigate theoretically for large particle numbers. Engineered quantum systems may offer a viable alternative, as witnessed in experimental demonstrations in a variety of physical platforms, each with its own capabilities and limitations. Semiconductor gate-defined quantum dot arrays are of particular interest since they offer both a direct mapping of their Hamiltonian to Fermi-Hubbard and Heisenberg models and the in-situ tunability of (magnetic) interactions and onsite potentials. In this work, we use an array of germanium quantum dots to simulate the dynamics of both single-spin excitations (magnons) and two-spin excitations (triplons). We develop a methodology that combines digital spin qubit operations for state preparation and readout with analog evolution under the full system Hamiltonian. Using these techniques, we can reconstruct quantum walk plots for both magnons and triplons, and for various configurations of Heisenberg exchange couplings. We furthermore explore the effect of single-site disorder and its impact on the propagation of spin excitations. The obtained results can provide a basis for simulating disorder-based solid-state phenomena such as many-body localization.

cond-mat.mes-hall↗

Universal control of four singlet-triplet qubits

The coherent control of interacting spins in semiconductor quantum dots is of strong interest for quantum information processing as well as for studying quantum magnetism from the bottom up. Here, we present a $2\times4$ germanium quantum dot array with full and controllable interactions between nearest-neighbor spins. As a demonstration of the level of control, we define four singlet-triplet qubits in this system and show two-axis single-qubit control of each qubit and SWAP-style two-qubit gates between all neighbouring qubit pairs, yielding average single-qubit gate fidelities of 99.49(8)-99.84(1)% and Bell state fidelities of 73(1)-90(1)%. Combining these operations, we experimentally implement a circuit designed to generate and distribute entanglement across the array. A remote Bell state with a fidelity of 75(2)% and concurrence of 22(4)% is achieved. These results highlight the potential of singlet-triplet qubits as a competing platform for quantum computing and indicate that scaling up the control of quantum dot spins in extended bilinear arrays can be feasible.

cond-mat.mes-hall↗

Long-range electron-electron interactions in quantum dot systems and applications in quantum chemistry

Long-range interactions play a key role in several phenomena of quantum physics and chemistry. To study these phenomena, analog quantum simulators provide an appealing alternative to classical numerical methods. Gate-defined quantum dots have been established as a platform for quantum simulation, but for those experiments the effect of long-range interactions between the electrons did not play a crucial role. Here we present the first detailed experimental characterization of long-range electron-electron interactions in an array of gate-defined semiconductor quantum dots. We demonstrate significant interaction strength among electrons that are separated by up to four sites, and show that our theoretical prediction of the screening effects matches well the experimental results. Based on these findings, we investigate how long-range interactions in quantum-dot arrays may be utilized for analog simulations of artificial quantum matter. We numerically show that about ten quantum dots are sufficient to observe binding for a one-dimensional $H_2$-like molecule. These combined experimental and theoretical results pave the way for future quantum simulations with quantum dot arrays and benchmarks of numerical methods in quantum chemistry.

quant-ph↗

Quantised Charge Transport driven by a Surface Acoustic Wave in induced unipolar and bipolar junctions

Surface acoustic waves (SAWs) have been used to transport single electrons across long distances of several hundreds of microns. They can potentially be instrumental in the implementation of scalable quantum processors and quantum repeaters, by facilitating interaction between distant qubits. While most of the work thus far has focused on SAW devices in doped GaAs/AlGaAs heterostructures, we have developed a method of creating lateral p-n junctions in an undoped heterostructure containing a quantum well, with the expected advantages of having reduced charge noise and increased spin-coherence lifetimes due to the lack of dopant scattering centres. We present experimental observations of SAW-driven single-electron quantised current in an undoped GaAs/AlGaAs heterostructure, where single electrons were transported between regions of induced electrons. We also demonstrate pumping of electrons by a SAW across the sub-micron depleted channel between regions of electrons and holes, and observe light emission at such a lateral p-n junction. Improving the lateral confinement in the junction should make it possible to produce a quantised electron-to-hole current and hence SAW-driven emission of single photons.

cond-mat.mes-hall↗

Single-photon Emission from an Acoustically-driven Lateral Light-emitting Diode

Single-photon sources are essential building blocks in quantum photonic networks, where quantum-mechanical properties of photons are utilised to achieve quantum technologies such as quantum cryptography and quantum computing. Most conventional solid-state single-photon sources are based on single emitters such as self-assembled quantum dots, which are created at random locations and require spectral filtering. These issues hinder the integration of a single-photon source into a scaleable photonic quantum network for applications such as on-chip photonic quantum processors. In this work, using only regular lithography techniques on a conventional GaAs quantum well, we realise an electrically triggered single-photon source with a GHz repetition rate and without the need for spectral filtering. In this device, a single electron is carried in the potential minimum of a surface acoustic wave (SAW) and is transported to a region of holes to form an exciton. The exciton then decays and creates a single photon in a lifetime of ~ 100ps. This SAW-driven electroluminescence (EL) yields photon antibunching with $g^{(2)}(0) = 0.39 \pm 0.05$, which satisfies the common criterion for a single-photon source $g^{(2)}(0) < 0.5$. Furthermore, we estimate that if a photon detector receives a SAW-driven EL signal within one SAW period, this signal has a 79%-90% chance of being a single photon. This work shows that a single-photon source can be made by combining single-electron transport and a lateral n-i-p junction. This approach makes it possible to create multiple synchronised single-photon sources at chosen positions with photon energy determined by quantum-well thickness. Compared with conventional quantum-dot-based single-photon sources, this device may be more suitable for an on-chip integrated photonic quantum network.

cond-mat.mes-hall↗