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Uday Deshpande

Publications and source records attributed to Uday Deshpande.

3 recordsLinked to original sources

Strategy for enhanced thermoelectric performance of Bi2S3 nanorods by Bi nanoinclusions

This is the first report on the enhanced thermoelectric (TE) properties of novel Bi2S3-Bi nanocomposites synthesized using a one-step polyol method at different reaction temperatures (TRe) and time. They are well-characterized as nanorod-composites, coexistent with orthorhombic Bi2S3 and rhombohedral Bi phases together in which the latter coats the former forming Bi2S3-Bi core-shell type structures along with independent Bi nanoparticles (NPs). There is a very significant observation of systematic reduction in electri-cal resistivity \r{ho} with reaction temperature and time duration increase, revealing a promising approach for reduction of \r{ho} in this highly resistive Bi2S3 and hence resolving the earlier obstacles for its thermoelectric application potentials for the past few decades. Most astonishingly, TE power factor at 300 K of highest Bi content nanocomposite pellet, made at 27 oC using ~900 MPa pressure, is 3 orders of magnitude greater than that of hot-pressed Bi2S3, or even 23% better than that of spark plasma-sintered core-shell Bi2S3@Bi sample reported earlier (Tarachand et al. Nano Res. 2016, 9, 3291; Ge et al. ACS Appl. Mater. Interfaces 2017, 9, 4828). Considering the probable greatly reduced thermal conductivity due to their complex nanostructures, the significantly improved TE performance potential near 300 K is highly anticipated for these toxic- and rare earth element-free TE nanocomposites, making the present synthesis method as a pioneering approach for developing enhanced thermoelectric properties of Bi2S3-based materials without using extra sintering steps.

cond-mat.mtrl-sci

First observation of temperature dependent lightinduced response of Ge25As10Se65 thin films

Ge rich ternary chalcogenide glasses (ChG) exhibit photobleaching (PB) when illuminated with bandgap light and such an effect is originating from the combined effect of intrinsic structural changes and photo-oxidation. In a sharp contradict to these previous observations, in this letter, we demonstrate for the first time that Ge rich Ge25As10Se65 ChG thin films exhibit photodarkening (PD) at 20 K and PB at 300 and 420 K for continuous illumination of ~ 3 hours. Strikingly, the temporal evolution of PD/PB show distinct characteristics at the temperatures of illumination and provide valuable information on the light induced structural changes. Further, structure specific far infrared (FIR) absorption measurements give direct evidence of different structural units involved in PD/PB at the contrasting temperatures. By comparing the lightinduced effects in vacuum and air, we conclude that intrinsic structural changes dominate over photo-oxidation in the observed PB in Ge25As10Se65 ChG thin films.

cond-mat.mtrl-sci

Investigation of Temperature Dependent Optical Modes in GexAs35-xSe65 Thin Films: Structure Specific Raman, FIR and Optical Absorption Spectroscopy

In this article, we present a comprehensive study of temperature and composition dependent Raman spectroscopy of GexAs35-xSe65 thin films to understand different structural units responsible for optical properties. Strikingly, our experimental results uncover the ratio of GeSe4/2 tetrahedral and AsSe3/2 pyramidal units in GexAs35-xSe65 thin films and their linear scaling relationship with temperature and x. An important notable outcome of our study is the formation of Se8 rings at lower temperatures. Our experimental results further provide interesting optical features, thermally and compositionally tunable optical absorption spectra. Detailed structure specific FIR data at room temperature also present direct information on the structural units in consistent with Raman data. We foresee that our studies are useful in determining the lightinduced response of these films and also for their potential applications in optics and optoelectronics.

cond-mat.mtrl-sci