arXiv subjects

Udo Schwingenschloegl

Publications and source records attributed to Udo Schwingenschloegl.

At least 19 recordsLinked to original sources

arXiv2015

Defect induced d0 ferromagnetism in a ZnO grain boundary

Several experimental studies have referred to the grain boundary (GB) defect as the origin of the ferromagnetism in ZnO. However, the mechanism of this hypothesis has never been confirmed. Present study investigates the atomic structure and the effect of point defects in a ZnO GB using the GGA+U approximation. The relaxed GB possesses large periodicity and channels with 8 and 10 numbered atoms having 4 and 3 fold coordination. Unlike O vacancy (VO), Zn vacancy (VZn) is preferentially aggregated at the GB, relative to the bulk-like region, indicating the possibility of obtaining p-type conductivity in polycrystalline ZnO. Although no magnetization is obtained from point defect-free GB, VZn induces spin polarization as large as 0.68 μB/atom to the O sites at the GB. Ferromagnetic exchange energy > 150 eV is obtained by increasing the concentration of VZn and by the injection of holes into the system. Electronic structure analysis indicates that the spin polarization without external dopants originates from the O 2p orbitals, a common feature of d0 semiconductors.

cond-mat.mtrl-sci↗

arXiv2014

Stretching of BDT-gold molecular junctions: thiol or thiolate termination?

It is often assumed that the hydrogen atoms in the thiol groups of a benzene-1,4-dithiol dissociate when Au-benzene-1,4-dithiol-Au junctions are formed. We demonstrate, by stability and transport properties calculations, that this assumption can not be made. We show that the dissociative adsorption of methanethiol and benzene-1,4-dithiol molecules on a flat Au(111) surface is energetically unfavorable and that the activation barrier for this reaction is as high as 1 eV. For the molecule in the junction, our results show, for all electrode geometries studied, that the thiol junctions are energetically more stable than their thiolate counterparts. Due to the fact that density functional theory (DFT) within the local density approximation (LDA) underestimates the energy difference between the lowest unoccupied molecular orbital and the highest occupied molecular orbital by several electron-volts, and that it does not capture the renormalization of the energy levels due to the image charge effect, the conductance of the Au-benzene-1,4-dithiol-Au junctions is overestimated. After taking into account corrections due to image charge effects by means of constrained-DFT calculations and electrostatic classical models, we apply a scissor operator to correct the DFT energy levels positions, and calculate the transport properties of the thiol and thiolate molecular junctions as a function of the electrodes separation.

cond-mat.mes-hall↗

arXiv2013

Peculiarities of Spin Polarization Inversion at a Thiophene/Cobalt Interface

We perform ab-initio calculations to investigate the spin polarization at the interface between a thiophene molecule and cobalt substrate. We find that the reduced symmetry in the presence of a sulfur atom (in the thiophene molecule) leads to a strong spatial dependence of the spin polarization of the molecule: The two carbon atoms far from the sulfur acquire a polarization opposite to that of the substrate, while the carbon atoms bonded directly to sulfur possess the same polarization as the substrate. We determine the origin of this peculiar spin interface property as well as its impact on the spin transport.

cond-mat.mtrl-sci↗

arXiv2012

On the ferromagnetic character of (LaVO$_3$)$_m$/SrVO$_3$ superlattices

The experimental observation that vanadate superlattices (LaVO$_3$)$_m$/SrVO$_3$ show ferromagnetism up to room temperature [U.\ Lüders {\it et al.}, Phys.\ Rev.\ B {\bf 80}, 241102R (2009)] is investigated by means of density functional theory. First, the influence of the density functional on the electronic and magnetic structure of bulk ${\rm LaVO_3}$ is discussed. Second, the band structure of a (LaVO$_3$)$_m$/SrVO$_3$ slab for $m=5$ and 6 is calculated. Very different behaviors for odd and even values of $m$ are found: In the odd case lattice relaxation results into a buckling of the interface VO$_2$ layers that leads to spin-polarized interfaces. In the even case a decoupling of the interface VO$_2$ layers from the LaO layers is obtained, confining the interface electrons into a two-dimensional electron gas. The orbital reconstruction at the interface due to the lattice relaxation is discussed.

cond-mat.str-el↗

arXiv2012

Mind the gap but also the spin: why the Heyd-Scuseria-Ernzerhof hybrid functional description of VO2 phases is not correct

In contrast with recent claims that the Heyd-Scuseria-Ernzerhof (HSE) screened hybrid functional can provide a good description of the electronic and magnetic structure of VO2 phases [V. Eyert, Phys. Rev. Lett. 107, 016401 (2011)], we show here that the HSE lowest-energy solutions for both the low-temperature monoclinic (M1) phase and the high-temperature rutile (R) phase, which are obtained upon inclusion of spin polarization, are at odds with experimental observations. For the M1 phase the groundstate is (but should not be) magnetic, while the groundstate of the R phase, which is also spin-polarized, is not (but should be) metallic. The energy difference between the low-temperature and high-temperature phases is also in strong discrepancy with the experimental latent heat.

cond-mat.str-el↗

arXiv2012

Electronic Transport Through EuO Spin Filter Tunnel Junctions

Epitaxial spin filter tunnel junctions based on the ferromagnetic semiconductor europium monoxide, EuO, are investigated by means of density functional theory. In particular, we focus on the spin transport properties of Cu(100)/EuO(100)/Cu(100) junctions. The dependence of the transmission coefficient and the current-voltage curves on the interface spacing and on the EuO thickness is explained in terms of the EuO density of states and the complex band structure. Furthermore we also discuss the relation between the spin transport properties and the Cu-EuO interface geometry. The level alignment of the junction is sensitively affected by the interface spacing, since this determines the charge transfer between EuO and the Cu electrodes. Our calculations indicate that EuO epitaxially grown on Cu can act as a perfect spin filter, with a spin polarization of the current close to 100%, and with both the Eu-5d conduction band and the Eu-4f valence band states contributing to the coherent transport. For epitaxial EuO on Cu a symmetry filtering is observed, with the Δ_1 states dominating the transmission. This leads to a transport gap larger than the fundamental EuO band gap. Importantly the high spin polarization of the current is preserved up to large bias voltages.

cond-mat.mes-hall↗

arXiv2009

Influence of the vacuum interface on the charge distribution in V2O3 thin films

The electronic structure of V2O3 thin films is studied by means of the augmented spherical wave method as based on density functional theory and the local density approximation. We establish that effects of charge redistribution, induced by the vacuum interface, in such films are restricted to a very narrow surface layer of approx. 15 Angstroem thickness. As a consequence, charge redistribution can be ruled out as a source of the extraordinary thickness-dependence of the metal-insulator transition observed in V2O3 thin films of 100-1000 Angstroem thickness.

cond-mat.str-el↗

arXiv2009

Stripe segregation and magnetic coupling in the nickelate La_5/3 Sr_1/3 NiO_4

We investigate the consequences of the stripe formation in the nickelate La5/3Sr1/3NiO4 for the details of its crystal structure and electronic states. Our data are based on numerical simulations within density functional theory (DFT) and the generalized gradient approximation (GGA). The on-site Coulomb interaction is included in terms of the LDA+U scheme. Structure optimization of preliminary experimental data indicates a strong interaction between the structural and electronic degrees of freedom. In particular, we find a segregation of the diagonal filled stripes induced by a delicate interplay with the magnetic coupling. Beyond the cooperative effect of stripe segregation and spin order, distinct octahedral distortions are essential for the formation of an insulating state.

cond-mat.str-el↗

arXiv2009

Fermi surface of MoO2 studied by angle-resolved photoemission spectroscopy, de Haas-van Alphen measurements, and electronic structure calculations

A comprehensive study of the electronic properties of monoclinic MoO2 from both an experimental and a theoretical point of view is presented. We focus on the investigation of the Fermi body and the band structure using angle resolved photoemission spectroscopy, de Haas-van Alphen measurements, and electronic structure calculations. For the latter, the new full-potential augmented spherical wave (ASW) method has been applied. Very good agreement between the experimental and theoretical results is found. In particular, all Fermi surface sheets are correctly identified by all three approaches. Previous controversies concerning additional hole-like surfaces centered around the Z- and B-point could be resolved; these surfaces were an artefact of the atomic-sphere approximation used in the old calculations. Our results underline the importance of electronic structure calculations for the understanding of MoO2 and the neighbouring rutile-type early transition-metal dioxides. This includes the low-temperature insulating phases of VO2 and NbO2, which have crystal structures very similar to that of molybdenum dioxide and display the well-known prominent metal-insulator transitions.

cond-mat.str-el↗

arXiv2008

Substrate effects on V2O3 thin films

We apply density functional theory and the augmented spherical wave method to analyze the electronic structure of V2O3 in the vicinity of an interface to Al2O3. The interface is modeled by a heterostructure setup of alternating vanadate and aluminate slabs. We focus on the possible modifications of the V2O3 electronic states in this geometry, induced by the presence of the aluminate layers. In particular, we find that the tendency of the V 3d states to localize is enhanced and may even cause a metal-insulator transition.

cond-mat.str-el↗

arXiv2007

Self-assembled Pt nanowires on Ge(001): Relaxation effects

Absorption of Pt on the Ge(001) surface results in stable self-organized Pt nanowires, extending over some hundred nanometers. Based on band structure calculations within density functional theory and the generalized gradient approximation, the structural relaxation of the Ge--Pt surface is investigated. The surface reconstruction pattern obtained agrees well with findings from scanning tunneling microscopy. In particular, strong Pt--Pt dimerization is characteristical for the nanowires. The surface electronic structure is significantly perturbed due to Ge--Pt interaction, which induces remarkable shifts of Ge states towards the Fermi energy. As a consequence, the topmost Ge layers are subject to a metal-insulator transition.

cond-mat.mes-hall↗

arXiv2007

Geometry dependence of the charge transfer at YBa2Cu3O7-metal interfaces

Transport in electronic devices based on high-Tc superconductors depends critically on the charge redistribution at interfaces, since the band structure is modified on a local scale. Using the density functional theory approach for relaxed YBa2Cu3O7-metal contacts, the charge transfer into the superconductor has been studied in Appl. Phys. Lett. 90, 192502 (2007). In the present paper we discuss the systematics inherent in the local electronic structure of the near-contact YBa2Cu3O7 sites, in particular the dependence on the contact geometry.

cond-mat.supr-con↗

arXiv2007

Electronic structure of the c(4 x 2) reconstructed Ge(001) surface

We investigate the electronic structure of the c(4 x 2) reconstructed Ge(001) surface using band structure calculations based on density functional theory and the generalized gradient approximation. In particular, we take into account the details of surface reconstruction by means of well relaxed crystal structures. The surface electronic states are identified and the local density of states is compared to recent data from scanning tunneling spectroscopy. We obtain almost perfect agreement between theory and experiment for both the occupied and unoccupied states, which allows us to clarify the interpretation of the experimental data.

cond-mat.mtrl-sci↗

arXiv2007

Charge redistribution at YBa2Cu3O7-metal interfaces

Charge redistribution at interfaces is crucial for electronic applications of high-Tc superconductors, since the band structure is modified on a local scale. We address the normal-state electronic structure of YBa2Cu3O7 (YBCO) at an YBCO-metal contact by first principles calculations for prototypical interface configurations. We derive quantitative results for the intrinsic doping of the superconducting CuO2 planes due to the metal contact. Our findings can be explained in terms of a band-bending mechanism, complemented by local screening effects. We determine a net charge transfer of 0.09 to 0.13 electrons in favour of the intraplane Cu sites, depending on the interface orientation.

cond-mat.supr-con↗

arXiv2007

Geometry Effects at Atomic-Size Aluminium Contacts

We present electronic structure calculations for aluminium nanocontacts. Addressing the neck of the contact, we compare characteristic geometries to investigate the effects of the local aluminium coordination on the electronic states. We find that the Al 3pz states are very sensitive against modifications of the orbital overlap, which has serious consequences for the transport properties. Stretching of the contact shifts states towards the Fermi energy, leaving the system instable against ferromagnetic ordering. By spacial restriction, hybridization is locally suppressed at nanocontacts and the charge neutrality is violated. We discuss the influence of mechanical stress by means of quantitative results for the charge transfer.

cond-mat.mes-hall↗

arXiv2007

Intrinsic Doping at YBCO-metal Interfaces: Quantitative Results

Charge redistribution in high-Tc superconductors due to structural defects or interfaces is known to be crucial for electronic applications as the band structure is modified on a local scale. In order to investigate these effects in more detail, we address the normal-state properties of YBa2Cu3O7 (YBCO) in the vicinity of YBCO-metal interfaces by electronic structure calculations for well relaxed interface configurations. Our findings can be interpreted in terms of a band-bending mechanism complemented by local screening effects. We derive quantitative results for the intrinsic doping of the superconducting CuO2 planes due to the metal interface. In particular, the net charge transfer amounts to 0.13 electrons in favour of each intraplane copper site, which appears to be a typical value for interfaces of high-Tc superconductors, thus opening great possibilities for a systematic optimization of wires and tapes from high-Tc materials.

cond-mat.supr-con↗

arXiv2007

Electronic Structure of Spin-Chain Compounds: Common Features

The incommensurate composite systems M14Cu24O41 (M=Ca,Sr,La) are based on two fundamental structural units: CuO2 chains and Cu2O3 ladders. We present electronic structure calculations within density functional theory in order to address the interrelations between chains and ladders. The calculations account for the details of the crystal structure by means of a unit cell comprising 10 chain and 7 ladder units. It turns out that chains and ladders can be treated independently, which allows us to introduce a model system based on a reduced unit cell. For the CuO2 chains, we find two characteristic bands at the Fermi energy. Tight binding fits yield nearest and next-nearest neighbour interactions of the same order of magnitude.

cond-mat.str-el↗

arXiv2006

Electronic structure of the Au/benzene-1,4-dithiol/Au transport interface: Effects of chemical bonding

We present results of electronic structure calculations for well-relaxed Au/benzene-1,4-dithiol/Au molecular contacts, based on density functional theory and the generalized gradient approximation. Electronic states in the vicinity of the Fermi energy are mainly of Au 5d and S 3p symmetry, whereas contributions of C 2p states are very small. Hybridization between C 2p orbitals within the benzene substructure is strongly suppressed due to S-C bonding. In agreement with experimental findings, this corresponds to a significantly reduced conductance of the molecular contact.

cond-mat.mes-hall↗