arXiv subjects

Ulderico Filippozzi

Publications and source records attributed to Ulderico Filippozzi.

5 recordsLinked to original sources

arXiv2025

Electric field control of superconducting fluctuations and quasiparticle interference at oxide interfaces

We investigate tunable superconducting transitions in (111)$\mathrm{LaAlO}_3/\mathrm{KTaO}_3$ field-effect devices. Large increases in conductivity, associated with superconducting fluctuations, are observed far above the transition temperature. However, the standard Aslamazov-Larkin paraconductivity model significantly underestimates the effect observed here. We use a model that includes conductivity corrections from normal state quasiparticle interference together with all contributions from superconducting fluctuations evaluated at arbitrary temperatures and in the short-wavelength limit. Through analysis of the magnetoconductance and resistive transitions, we find that the large conductivity increase can be explained by a combination of weak anti-localization and Maki-Thompson superconducting fluctuations. Both contributions are enabled by a strong temperature dependence of the electron's decoherence time compatible with an electron-phonon scattering scenario. We find that conductivity corrections are modulated by the electrostatic field effect, that governs a competition between normal-state quasiparticle interference and superconducting fluctuations.

cond-mat.supr-con↗

arXiv2024

High-field superconductivity from atomic-scale confinement and spin-orbit coupling at (111)$\mathrm{LaAlO_3/KTaO_3}$ interfaces

We study the superconducting critical fields of two-dimensional electron systems at (111)$\mathrm{LaAlO_3/KTaO_3}$ interfaces as a function of electrostatic back-gating. Our work reveals inplane critical fields of unprecedented magnitudes at oxide interfaces. By comparing the critical fields in-plane and out-of-plane we discover an extremely anisotropic superconductor with an effective thickness below 1 nm and a 12-fold violation of the Chandrasekhar-Clogston paramagnetic limit. The analysis of magneto-transport indicates that the enhancement of the critical fields is due to an exceptionally thin superconducting layer and to a paramagnetic susceptibility suppressed by spin-orbit scattering.

cond-mat.supr-con↗

arXiv2023

Designing spin and orbital sources of Berry curvature at oxide interfaces

Quantum materials can display physical phenomena rooted in the geometry of electronic wavefunctions. The corresponding geometric tensor is characterized by an emergent field known as Berry curvature (BC). Large BCs typically arise when electronic states with different spin, orbital or sublattice quantum numbers hybridize at finite crystal momentum. In all materials known to date, the BC is triggered by the hybridization of a single type of quantum number. Here, we report the discovery of the first material system having both spin and orbital-sourced BC: LaAlO$_3$/SrTiO$_3$ interfaces grown along the [111] direction. We detect independently these two sources and directly probe the BC associated to the spin quantum number through measurements of an anomalous planar Hall effect. The observation of a nonlinear Hall effect with time-reversal symmetry signals large orbital-mediated BC dipoles. The coexistence of different forms of BC enables the combination of spintronic and optoelectronic functionalities in a single material.

cond-mat.mes-hall↗

arXiv2022

Realization of the field-free Josephson Diode

The superconducting analog to the semiconducting diode, the Josephson diode, has long been sought, with multiple avenues to realization proposed by theorists. Exhibiting magnetic-field free, single directional superconductivity with Josephson coupling of the supercurrent across a tunnel barrier, it would serve as the building-block for next-generation superconducting circuit technology. Here we realized the field-free Josephson diode using an inversion symmetry breaking heterostructure of $\mathrm{NbSe_2/Nb_3Br_8/NbSe_2}$. We demonstrate, for the first time without magnetic field, the junction can be superconducting in one direction while normal in the opposite direction. Based on that, half-wave rectification of a square-wave excitation was achieved with low switching current density ($~2.2\times 10^2 \mathrm{A/cm^2}$), high rectification ratio ($~10^4$) and high robustness (at least $10^4$ cycles). We also demonstrate symmetric $ΔI_\mathrm{c}$ (the difference between positive and negative critical currents) behavior with field and the expected Fraunhofer current phase relation of a Josephson junction. This realization raises fundamental questions about the Josephson effect through an insulator when breaking symmetry, and opens the door to ultralow power, high speed, superconducting circuits for logic and signal modulation.

cond-mat.supr-con↗

arXiv2021

Self-sealing complex oxide resonators

Although 2D materials hold great potential for next-generation pressure sensors, recent studies revealed that gases permeate along the membrane-surface interface that is only weakly bound by van der Waals interactions, necessitating additional sealing procedures. In this work, we demonstrate the use of free-standing complex oxides as self-sealing membranes that allow the reference cavity of pressure sensors to be sealed by a simple anneal. To test the hermeticity, we study the gas permeation time constants in nano-mechanical resonators made from SrRuO3 and SrTiO3 membranes suspended over SiO2/Si cavities which show an improvement up to 4 orders of magnitude in the permeation time constant after annealing the devices for 15 minutes. Similar devices fabricated on Si3N4/Si do not show such improvements, suggesting that the adhesion increase over SiO2 is mediated by oxygen bonds that are formed at the SiO2/complex oxide interface during the self-sealing anneal. We confirm the enhancement of adhesion by picosecond ultrasonics measurements which show an increase in the interfacial stiffness by 70% after annealing. Since it is straigthforward to apply, the presented self-sealing method is thus a promising route toward realizing ultrathin hermetic pressure sensors.

cond-mat.mtrl-sci↗