arXiv subjects

Ulf Helmersson

Publications and source records attributed to Ulf Helmersson.

9 recordsLinked to original sources

arXiv2025

Effect of substrate temperature on the deposition of Al-doped ZnO thin films using high power impulse magnetron sputtering

Al-doped ZnO thin films were deposited using reactive high power impulse magnetron sputtering at substrate temperatures between room temperature and 600 $\bullet$ C. Two sample series with different oxygen partial pressures were studied. The films with the lowest resistivity of 3 x 10 -4 $\Omega$cm were deposited at the highest substrate temperature of 600 $\bullet$ C. The improvement of the electrical properties could be related to an improvement of the mobility due to the improved crystallinity. This improved crystallinity also increased the stability of the films towards ambient moisture. On the other hand, the detrimental influence of negative oxygen bombardment could be avoided, as the HiPIMS process can take place in the metal or transition mode even at relatively high oxygen partial pressures.

cond-mat.mtrl-sci↗

arXiv2023

Enhanced Thermoelectric Properties By Embedding Fe Nanoparticles Into CrN Films For Energy Harvesting Applications

Nanostructured materials and nanocomposites have shown great promise for improving the efficiency of thermoelectric materials. Herein, Fe nanoparticles were imbedded into a CrN matrix by combining two physical vapor deposition approaches, namely high-power impulse magnetron sputtering and a nanoparticle gun. The combination of these techniques allowed the formation of nanocomposites in which the Fe nanoparticles remained intact without intermixing with the matrix. The electrical and thermal transport properties of the nanocomposites were investigated and compared to a monolithic CrN film. The measured thermoelectric properties revealed an increase in the Seebeck coefficient, with a decrease of hall carrier concentration and an increase of the electron mobility which could be explained by energy filtering by internal phases created at the NP/matrix interface. The thermal conductivity of the final nanocomposite was reduced from 4.8 W m-1K-1 to a minimum of 3.0 W m-1K-1 W. This study shows prospects for the nanocomposite synthesis process using nanoparticles and its use in improving the thermoelectric properties of coatings.

cond-mat.mtrl-sci↗

arXiv2020

Nanowire design by magnetic collection of Fe, Ni and/or FeNi-alloy nanoparticles

A method for growing nanoparticles with different elemental compositions simply by changing pulsing parameters in a power supply is demonstrated. The technique is based on high power pulsed hollow cathode sputtering, and the difference in particle composition ranges from pure Fe and Ni, to fully alloyed FeNi particles. Several pulses, or bursts, from a hollow cathode are needed in order to grow a nanoparticle using high power pulses. With this in mind, we devised a setup with two hollow cathodes of different material, Fe and Ni, situated in the vicinity of each other. By using two power supplies and a synchronization unit, the number and size of pulses of each element into the growth regime of the nanoparticles is controlled, and a tunable mixture of ions of the two elements is ensured. We here show that the two-target high power hollow cathode sputtering unit can be a powerful tool for rapid prototyping of more advanced, customized, nanoparticles, which can be of great importance for numerous applications.

cond-mat.mes-hall↗

arXiv2019

Bipolar High Power Impulse Magnetron Sputtering for energetic ion bombardment during TiN thin film growth without the use of a substrate bias

The effect of applying a positive voltage pulse (Urev = 10 - 150 V) directly after the negative high power impulse magnetron sputtering (HiPIMS) pulse (bipolar HiPIMS) is investigated for the reactive sputter deposition of TiN thin films. Energy-resolved mass spectroscopy analyses are performed to gain insight in the effect on the ion energy distribution function of the various ions. It is demonstrated that the energy of a large fraction of the ions can be tuned by a reverse target potential and gain energy corresponding to the applied Urev. Microscopy observations and x-ray reflectometry reveal densification of the films which results in an increase in the film hardness from 23.9 to 34 GPa as well as an increase in compressive film stress from 2.1 GPa to 4.7 GPa when comparing conventional HiPIMS with bipolar HiPIMS (Urev = 150 V).

physics.app-ph↗

arXiv2018

Nucleation of titanium nanoparticles in an oxygen-starved environment, I: Experiments

A constant supply of oxygen has been assumed to be necessary for the growth of titanium nanoparticles by sputtering. This oxygen supply can arise from a high background pressure in the vacuum system or from a purposely supplied gas. The supply of oxygen makes it difficult to grow metallic nanoparticles of titanium and can cause process problems by reacting with the target. We here report that growth of titanium nanoparticles in the metallic hexagonal titanium (αTi) phase is possible using a pulsed hollow cathode sputter plasma and adding a high partial pressure of helium to the process instead of trace amounts of oxygen. The helium cools the process gas in which the nanoparticles nucleate. This is important both for the first dimer formation and the continued growth to a thermodynamically stable size. The parameter region where the synthesis of nanoparticles is possible is mapped out experimentally and the theory of the physical processes behind this process window is outlined. A pressure limit below which no nanoparticles were produced was found at 200 Pa, and could be attributed to a low dimer formation rate, mainly caused by a more rapid dilution of the growth material. Nanoparticle production also disappeared at argon gas flows above 25 sccm. In this case the main reason was identified as a gas temperature increase within the nucleation zone, giving a too high evaporation rate from nanoparticles (clusters) in the stage of growth from dimers to stable nuclei. These two mechanisms are in depth explored in a companion paper [1]. A process stability limit was also found at low argon gas partial pressures, and could be attributed to a transition from a hollow cathode discharge to a glow discharge.

cond-mat.mtrl-sci↗

arXiv2018

Nucleation of titanium nanoparticles in an oxygen-starved environment, II: Theory

The nucleation and growth of pure titanium nanoparticles in a low-pressure sputter plasma has been believed to be essentially impossible. The addition of impurities, such as oxygen or water, facilitates this and allows the growth of nanoparticles. However, it seems that this route requires so high oxygen densities that metallic nanoparticles in the hexagonal aTi-phase cannot be synthesized. Here we present a model which explains results for the nucleation and growth of titanium nanoparticles in the absent of reactive impurities. In these experiments, a high partial pressure of helium gas was added which increased the cooling rate of the process gas in the region where nucleation occurred. This is important for two reasons. First, a reduced gas temperature enhances Ti2 dimer formation mainly because a lower gas temperature gives a higher gas density, which reduces the dilution of the Ti vapor through diffusion. The same effect can be achieved by increasing the gas pressure. Second, a reduced gas temperature has a "more than exponential" effect in lowering the rate of atom evaporation from the nanoparticles during their growth from a dimer to size where they are thermodynamically stable, r*. We show that this early stage evaporation is not possible to model as a thermodynamical equilibrium. Instead, the single-event nature of the evaporation process has to be considered. This leads, counter intuitively, to an evaporation probability from nanoparticles that is exactly zero below a critical nanoparticle temperature that is size-dependent. Together, the mechanisms described above explain two experimentally found limits for nucleation in an oxygen-free environment. First, there is a lower limit to the pressure for dimer formation. Second, there is an upper limit to the gas temperature above which evaporation makes the further growth to stable nuclei impossible.

cond-mat.mtrl-sci↗

arXiv2018

Low temperature (Ts/Tm < 0.1) epitaxial growth of HfN/MgO(001) via reactive HiPIMS with metal-ion synchronized substrate bias

Low-temperature epitaxial growth of refractory transition-metal nitride thin films by means of physical vapor deposition has been a recurring theme in advanced thin-film technology for several years. In the present study, 150-nm-thick epitaxial HfN layers are grown on MgO(001) by reactive high-impulse magnetron sputtering (HiPIMS) with no external substrate heating. Maximum film growth temperatures Ts due to plasma heating range from 70-150 °C, corresponding to Ts/Tm = 0.10-0.12 (in which Tm is the HfN melting point in K). During HiPIMS, gas and sputtered-metal ion fluxes incident at the growing film surface are separated in time due to strong gas rarefaction and the transition to a metal-ion dominated plasma. In the present experiments, a negative bias of 100 V is applied to the substrate, either continuously during the entire deposition or synchronized with the metal-rich portion of the ion flux. Two different sputtering-gas mixtures, Ar/N2 and Kr/N2, are employed in order to probe effects associated with the noble-gas mass and ionization potential. The combination of x-ray diffraction, high-resolution reciprocal-lattice maps, and high-resolution cross-sectional transmission electron microscopy analyses establish that all HfN films have a cube-on-cube orientational relationship with the substrate, i.e., [001]HfN||[001]MgO and (100)HfN||(100)MgO. Layers grown with continuous substrate bias, in either Ar/N2 or Kr/N2, exhibit a relatively high mosaicity and a high concentration of trapped inert gas. In distinct contrast, layers grown in Kr/N2 with the substrate bias synchronized to the metal-ion-rich portion of HiPIMS pulses, have much lower mosaicity, no measurable inert-gas incorporation, and a hardness of 25.7 GPa, in good agreement with results for epitaxial HfN(001) layers grown at Ts = 650 C (Ts/Tm = 0.26).

cond-mat.mtrl-sci↗

arXiv2015

Synthesis of titanium-oxide nanoparticles with size and stoichiometry control

Ti-O nanoparticles have been synthesized via hollow cathode sputtering in an Ar-O2 atmosphere using high power pulsing. It is shown that the stoichiometry and the size of the nanoparticles can be varied independently, the former through controlling the O2 gas flow and the latter by the independent biasing of two separate anodes in the growth zone. Nanoparticles with diameters in the range of 25 to 75 nm, and with different Ti-O compositions and crystalline phases, have been synthesized.

cond-mat.mes-hall↗

arXiv2014

Molecular dynamics simulation of growth of Cu nanoclusters from Cu-ions in a plasma

A recently developed method of nanoclusters growth in a pulsed plasma is studied by means of molecular dynamics. A model that allows one to consider high-energy charged particles in classical molecular dynamics is suggested, and applied for studies of single impact events in nanoclusters growth. In particular, we provide a comparative analysis of the well-studied inert gas aggregation method and the growth from ions in a plasma. The importance to consider of the angular distribution of incoming ions in the simulations of the nanocluster growth is underlined. A detailed study of the energy transfer from the incoming ions to a nanocluster, as well as the diffusion of incoming ions on the cluster surface is carried out. Our results are important for understanding and control of the nanocluster growth process.

cond-mat.mes-hall↗