arXiv subjects

Ulrich Höfer

Publications and source records attributed to Ulrich Höfer.

16 recordsLinked to original sources

arXiv2026

Robust coherent phonon mode at GaP/Si(001) heterointerface

Lattice-matched GaP layers without extended defects can be grown on Si(001) substrate via a two-step growth procedure, consisting of low-temperature nucleation followed by high-temperature overgrowth. A transient reflectivity experiment on a thin, low-temperature nucleation layer discovered a previously unknown phonon mode at 2 THz upon below-bandgap optical excitation (Adv. Mater. Interfaces 2025, 2400573). Here we examine the influence of the two-step growth process on the ultrafast carrier and phonon dynamics of the GaP/Si interface. We find that the discrete electronic state, which governed the interfacial carrier dynamics of the thin nucleation layer, becomes suppressed when a thicker layer is formed by high-temperature overgrowth. The coherent 2-THz oscillation is observed also in the high-temperature overgrown structures, at the constant frequency regardless of the GaP layer thickness. Its resonance behavior closely follows that of the carrier dynamics at the respective growth stage. This supports its assignment to a phonon mode generated at the heterointerface and strongly coupled to the interfacial carriers. The phonon amplitude exhibits a non-monotonic dependence on the GaP layer thickness, and its optical polarization-dependence is qualitatively altered by the high-temperature overgrowth, neither of which is accounted for by the carrier-phonon coupling alone. Our results demonstrate that the 2-THz interfacial phonon mode is robust against high-temperature overgrowth, while its amplitude is determined by both coupling to interfacial electronic transitions and atomic-scale structural reorganization at the interface.

cond-mat.mtrl-sci↗

arXiv2026

Subcycle videography of lightwave-driven Landau-Zener-Majorana transitions in graphene

Strong light fields have unlocked previously unthinkable possibilities to tailor coherent electron trajectories, engineer band structures and shape emergent phases of matter all-optically. Unravelling the underlying quantum mechanisms requires a visualisation of the lightwave-driven electron motion directly in the band structure. While photoelectron momentum microscopy has imaged optically excited electrons averaged over many cycles of light, actual subcycle band-structure videography has been limited to small electron momenta. Yet lightwave-driven elementary processes in quantum materials often occur throughout momentum space. Here, we introduce attosecond-precision, subcycle band-structure videography covering the entire first Brillouin zone (BZ) and visualize one of the most fundamental but notoriously elusive strong-field processes: non-adiabatic Landau-Zener-Majorana (LZM) tunnelling. The interplay of field-driven acceleration within the Dirac-like band structure of graphene and periodic LZM interband tunnelling manifest in a coherent displacement and distortion of the momentum distribution at the BZ edge. The extremely non-thermal electron distributions also allow us to disentangle competing scattering processes and assess their impact on coherent electronic control through electron redistribution and thermalization. Our panoramic view of strong-field-driven electron motion in quantum materials lays the foundation for a microscopic understanding of some of the most discussed light-driven phenomena in condensed matter physics.

cond-mat.mes-hall↗

arXiv2026

Observation of an isolated flat band in the van der Waals crystal NbOCl$_2$

Dispersionless electronic bands lead to an extremely high density of states and suppressed kinetic energy, thereby increasing electronic correlations and instabilities that can shape emergent ordered states, such as excitonic, ferromagnetic, and superconducting phases. A flat band that extends over the entire momentum space and is well isolated from other dispersive bands is, therefore, particularly interesting. Here, the band structure of the van der Waals crystal NbOCl$_2$ is revealed by utilizing photoelectron momentum microscopy. We directly map out an electronic band that is flat throughout the entire Brillouin zone and features a width of only $\sim$100 meV. This band is well isolated from both the conduction and remote valence bands. Moreover, the quasiparticle band gap shows a high tunability upon the deposition of caesium atoms on the surface. By combining the single-particle band structure with the optical transmission spectrum, the optical gap is identified. The fully isolated flat band in a van der Waals crystal provides a qualitatively new testbed for exploring flat-band physics.

cond-mat.mes-hall↗

arXiv2025

Observing the spatial and temporal evolution of exciton wave functions

Excitons, the correlated electron-hole pairs governing optical and transport properties in organic semiconductors, have long resisted direct experimental access to their full quantum-mechanical wave functions. Here, we use femtosecond time-resolved photoemission orbital tomography (trPOT), combining high-harmonic probe pulses with time- and momentum-resolved photoelectron spectroscopy, to directly image the momentum-space distribution and ultrafast dynamics of excitons in $α$-sexithiophene thin films. We introduce a quantitative model that enables reconstruction of the exciton wave function in real space, including both its spatial extent and its internal phase structure. The reconstructed wave function reveals coherent delocalization across approximately three molecular units and exhibits a characteristic phase modulation, consistent with ab initio calculations within the framework of many-body perturbation theory. Time-resolved measurements further show a $\sim 20$\% contraction of the exciton radius within 400 fs, providing direct evidence of self-trapping driven by exciton-phonon coupling. These results establish trPOT as a general and experimentally accessible approach for resolving exciton wave functions -- with spatial, phase, and temporal sensitivity -- in a broad class of molecular and low-dimensional materials.

cond-mat.mtrl-sci↗

arXiv2023

Coherent and incoherent excitation pathways in time-resolved photoemission orbital tomography of CuPc/Cu(001)-2O

Time-resolved photoemission orbital tomography (tr-POT) offers unique possibilities for tracing molecular electron dynamics. The recorded pump-induced changes of the angle-resolved photoemission intensities allow to characterize unoccupied molecular states in momentum space and to deduce the incoherent temporal evolution of their population. Here, we show for the example of CuPc/Cu(001)-2O that the method also gives access to the coherent regime and that different excitation pathways can be disentangled by a careful analysis of the time-dependent change of the photoemission momentum pattern. In particular, we demonstrate by varying photon energy and polarization of the pump light, how the incoherent temporal evolution of the LUMO distribution can be distinguished from coherent contributions of the projected HOMO. Moreover, we report the selective excitation of molecules with a specific orientation at normal incidence by aligning the electric field of the pump light along the molecular axis.

cond-mat.mtrl-sci↗

arXiv2023

Strongly coupled interface electronic states and interface phonon mode at GaP/Si(001)

Ultrafast carrier and phonon dynamics at the buried heterointerface of GaP/Si(001) are investigated by means of two-color pump-probe reflectivity measurements. The carrier-induced reflectivity signal exhibits a resonant enhancement at pump-photon energies of 1.4 eV, which can be assigned to an optical transition between electronic interface states. The transient reflectivity is modulated by a coherent oscillation at 2 THz, whose amplitude also becomes maximum at 1.4 eV. The observed resonant behavior of the phonon mode in combination with a characteristic wavelength-dependence of, both, its frequency and initial phase, strongly indicate that the 2-THz mode is a difference-combination mode of a GaP-like and a Si-like phonon at the heterointerface and that this second-order scattering process can be enhanced by a double resonance involving the interfacial electronic states.

cond-mat.mtrl-sci↗

arXiv2021

Separation of interface and substrate carrier dynamics at a heterointerface based on coherent optical phonons

Transient reflectivity spectroscopy is widely used to study ultrafast carrier- and phonon-dynamics in semiconductors. In their heterostructures, it is often not straightforward to distinguish contributions to the signal from the various layers. In this work, we perform transient reflectivity measurements on lattice-matched GaP/Si(001) using a near infrared pulse, to which GaP is transparent. The pump laser pulse can generate coherent longitudinal optical (LO) phonons both in the GaP overlayer as well as in the Si substrate which have distinct frequencies. This enables us to track the amplitude of the respective signal contributions as a function of GaP layer thickness $d$. The Si phonon amplitude in the signal exhibits an oscillatory behavior with increasing $d$. This can be quantitatively explained by the interference of the probe light reflected at the air/GaP/Si heterointerface. Based on this knowledge, we can then separate the interface- and the substrate-contributions in the carrier-induced non-oscillatory transient reflectivity signal. The obtained interface signal provides evidence for ultrafast carrier injection from the Si substrate into the GaP overlayer. This is also corroborated by examining the deviation of the polarization-dependence of the GaP coherent optical phonon signal from that of the bulk semiconductor.

cond-mat.mes-hall↗

arXiv2021

Momentum-resolved observation of exciton formation dynamics in monolayer WS$_2$

The dynamics of exciton formation in transition metal dichalcogenides is difficult to measure experimentally, since many momentum-indirect exciton states are not accessible to optical interband spectroscopy. Here, we combine a tuneable pump, high-harmonic probe laser source with a 3D momentum imaging technique to map photoemitted electrons from monolayer WS$_2$. This provides momentum-, energy- and time-resolved access to excited states on an ultrafast timescale. The high temporal resolution of the setup allows us to trace the early-stage exciton dynamics on its intrinsic timescale and observe the formation of a momentum-forbidden dark K$Σ$ exciton a few tens of femtoseconds after optical excitation. By tuning the excitation energy we manipulate the temporal evolution of the coherent excitonic polarization and observe its influence on the dark exciton formation. The experimental results are in excellent agreement with a fully microscopic theory, resolving the temporal and spectral dynamics of bright and dark excitons in WS$_2$.

cond-mat.mtrl-sci↗

arXiv2020

Ultrafast dynamics of photocurrents in surface states of 3D topological insulators

This article reviews experimental work on the ultrafast electron dynamics in the topological surface state (TSS) of three-dimensional (3D) topological insulators (TIs) observed with time- and angle-resolved two-photon photoemission (2PPE). The focus is laid on the generation of ultrafast photocurrents and the time-resolved observation of their decay. 2PPE not only allow to unambiguously relate the photocurrents to the spin-polarized electronic surface states. Probing of the asymmetric momentum distribution of the electrons carrying the current makes it possible to study the microscopic scattering processes that governs the unusual electron transport in the time domain. Ultrashort mid-infrared pump pulses permit not only a direct optical excitation of the TSS in Sb$_2$Te$_3$ but also lead to a strong asymmetry of the TSS population in momentum space. Two-dimensional band mapping of the TSS shows that this asymmetry is in fact representative for a macroscopic photocurrent while the helicity-dependence of the photocurrent is found to be small. The time-resolved observation of the photocurrent decay reveals a huge mean free path of the electrons in the TSS.

cond-mat.mes-hall↗

arXiv2020

Tracing orbital images on ultrafast time scales

Frontier orbitals, i.e., the highest occupied and lowest unoccupied orbitals of a molecule, generally determine molecular properties, such as chemical bonding and reactivities. Consequently, there has been a lot of interest in measuring them, despite the fact that, strictly speaking, they are not quantum-mechanical observables. Yet, with photoemission tomography a powerful technique has recently been introduced by which the electron distribution in orbitals of molecules adsorbed at surfaces can be imaged in momentum space. This has even been used for the identification of reaction intermediates in surface reactions. However, so far it has been impossible to follow an orbital's momentum-space dynamics in time, for example through an excitation process or a chemical reaction. Here, we report a key step in this direction: we combine time-resolved photoemission employing high laser harmonics and a recently developed momentum microscope to establish a tomographic, femtosecond pump-probe experiment of unoccupied molecular orbitals. Specifically, we measure the full momentum-space distribution of transiently excited electrons. Because in molecules this momentum-space distribution is closely linked to orbital shapes, our experiment offers the extraordinary possibility to observe ultrafast electron motion in time and space. This enables us to connect their excited states dynamics to specific real-space excitation pathways.

physics.chem-ph↗

arXiv2018

Coherent optical and acoustic phonons generated at lattice-matched GaP/Si(001) heterointerfaces

Thin GaP films can be grown on an exact Si(001) substrate with nearly perfect lattice match. We perform all-optical pump-probe measurements to investigate the ultrafast electron-phonon coupling at the buried interface of GaP/Si. Above-bandgap excitation with a femtosecond laser pulse can induce coherent longitudinal optical (LO) phonons both in the GaP opverlayer and in the Si substrate. The coupling of the GaP LO phonons with photoexcited plasma is reduced significantly with decreasing the GaP layer thickness from 56 to 16 nm due to the quasi-two-dimensional confinement of the plasma. The same laser pulse can also generate coherent longitudinal acoustic (LA) phonons in the form of a strain pulse. The strain induces not only a periodic modulation in the optical reflectivity as they propagate in the semiconductors, but also a sharp spike when it arrives at the GaP layer boundaries. The acoustic pulse induced at the GaP/Si interface is remarkably stronger than that at the Si surface, suggesting a possible application of the GaP/Si heterostructure as an opto-acoustic transducer. The amplitude and the phase of the reflectivity modulation varies with the GaP layer thickness, which can be understood in terms of the interference caused by the multiple acoustic pulses generated at the top surface and at the buried interface.

cond-mat.mtrl-sci↗

arXiv2016

Direct Characterization of Band Bending in GaP/Si(001) Heterostructures with Hard X-ray Photoelectron Spectroscopy

We apply hard X-ray photoelectron spectroscopy (HAXPES) to investigate the electronic structures in ~50-nm thick epitaxial GaP layers grown on Si(001) under different conditions. Depth profiles of the local binding energies for the core levels are obtained by measuring the photoemission spectra at different incident photon energies between 3 and 7 keV and analyzing them with simple numerical models. The obtained depth profiles are in quantitative agreement with the band bending determinations for the same samples in a previous coherent phonon spectroscopic study. Our results demonstrate the applicability of the HAXPES with varying incident photon energy to characterize the electric potential profiles at buried semiconductor heterointerfaces.

cond-mat.mes-hall↗

arXiv2016

Intervalley scattering in MoS$_2$ imaged by two-photon photoemission with a high-harmonic probe

We report on the direct mapping of electron transfer in the momentum space of bulk MoS$_2$ by means of time- and angle-resolved two-photon photoemission with a high-harmonic probe. For this purpose, we have combined a high-repetition rate high-harmonic source with tunable femtosecond pump pulses and a 3D ($k_x, k_y, E$) electron spectrometer. We show that optical excitation slightly above the A exciton resonance results in an immediate occupation of the conduction band at $\overline{K}$ followed by an ultrafast transfer ($< 50$~fs) to the conduction band minimum at $\overlineΣ$. Both signals, at $\overline{K}$ and $\overlineΣ$, do not vanish over the observed period of 400~fs. The technique described here enables direct access to the charge transfer dynamics in $k$-space and allows the study of decay times and decay channels in various systems with dependence on the excess energy or helicity of the excitation.

cond-mat.mes-hall↗

arXiv2016

Chemoselective Reactivity of Bifunctional Cyclooctynes on Si(001)

Controlled organic functionalization of silicon surfaces as integral part of semiconductor technology offers new perspectives for a wide range of applications. The high reactivity of the silicon dangling bonds, however, presents a major hindrance for the first basic reaction step of such a functionalization, i.e., the chemoselective attachment of bifunctional organic molecules on the pristine silicon surface. We overcome this problem by employing cyclooctyne as the major building block of our strategy. Functionalized cyclooctynes are shown to react on Si(001) selectively via the strained cyclooctyne triple bond while leaving the side groups intact. The achieved selectivity originates from the distinctly different adsorption dynamics of the separate functionalities: A direct adsorption pathway is demonstrated for cyclooctyne as opposed to the vast majority of other organic functional groups. The latter ones react on Si(001) via a metastable intermediate which makes them effectively unreactive in competition with the direct pathway of cyclooctyne's strained triple bond.

physics.chem-ph↗

arXiv2016

Spectroscopy and Dynamics of a Two-Dimensional Electron Gas on top of Ultrathin Helium Films on Cu(111)

Electrons in image-potential states on the surface of bulk helium represent a unique model system of a two-dimensional electron gas. Here, we investigate their properties in the extreme case of reduced film thickness: a monolayer of helium physisorbed on a single-crystalline (111)-oriented Cu surface. For this purpose we have utilized a customized setup for time-resolved two-photon photoemission (2PPE) at very low temperatures under ultra-high vacuum conditions. We demonstrate that the highly polarizable metal substrate increases the binding energy of the first (n = 1) image-potential state by more than two orders of magnitude as compared to the surface of liquid helium. An electron in this state is still strongly decoupled from the metal surface due to the large negative electron affinity of helium and we find that even one monolayer of helium increases its lifetime by one order of magnitude compared to the bare Cu(111) surface.

cond-mat.mes-hall↗

arXiv2015

Resolubility of Image-Potential Resonances

A theory of image-potential states is presented for the general case where these surface electronic states are resonant with a bulk continuum. The theory extends the multiple scattering approach of Echenique and Pendry into the strong coupling regime while retaining independence from specific forms of surface and bulk potentials. The theory predicts the existence of a well-resolved series of resonances for arbitrary coupling strengths. Surprisingly, distinct image-potential resonances are thus expected to exist on almost any metal surface, even in the limiting case of jellium.

cond-mat.mes-hall↗