arXiv subjects

Ulrich T. Schwarz

Publications and source records attributed to Ulrich T. Schwarz.

3 recordsLinked to original sources

arXiv2025

Low and high frequency noise in LEDs

LED degradation is usually associated with defects in the active region. Whereby the noise analysis can be a strong instrument to reveal them. The results of optical noise measurements for commercially available blue LED samples in a wide frequency range from kHz to MHz are reported. Noise spectra were decomposed into components according to the presented theoretical model which includes 1/f-type noise, generation-recombination noise, and white noise. The 1/f$^γ$-type noise was modeled as a superposition of generation-recombination noise components at defects with a continuous wide distribution of relaxation lifetimes. The coincidence of the experimental results with 1/f$^γ$ model for the low frequency range is proved and a fitting is made. We identified three noise components that are highly current-dependent. The corresponding model of temperature dependence for the low-frequency range was developed. At low currents, the model partially matched the experimental results in the temperature range from 100 K to 300 K at low frequencies. However, high-frequency measurements showed deviations from the expected Lorentzian behavior.

physics.app-ph↗

arXiv2025

Unlocking Spin Dynamics: Spin-Orbit Coupling Driven Spin State Interconversion in Carbazole-Containing TADF Emitters

The determination of transport mechanisms in organic light-emitting diodes (OLEDs) is crucial for optimizing device performance. Magnetic field measurements enable the differentiation of spin state interconversion mechanisms, but data interpretation remains challenging. Here, experimental and theoretical investigations were combined to provide a comprehensive understanding of the underlying processes. This study systematically compares three cyanoarene-based emitters with different singlet-triplet gaps to explore factors influencing reverse intersystem crossing (RISC). The comparison of all-$^1$H and all-$^2$H 4CzIPN isotopologues confirms that RISC is governed by spin-orbit coupling (SOC) rather than hyperfine interactions. Magnetic field-dependent measurements reveal that charge transport in OLED devices is driven by triplet-charge annihilation in 3CzClIPN and 4CzIPN, while triplet-triplet annihilation dominates for 5CzBN. Theoretical calculations further indicate that SOC-mediated RISC in 3CzClIPN and 4CzIPN can additionally occur via a $T_2$ intermediate state with an activation energy distinct from the singlet-triplet energy gap. A temperature-dependent analysis of the devices was conducted to quantify this activation energy and compare it with the computational findings. These findings establish key correlations between activation energy, spin dynamics, and magnetic field effects in TADF emitters, advancing our understanding of excitonic processes in OLEDs.

physics.app-ph↗

arXiv2016

Index-antiguiding in narrow-ridge GaN-based laser diodes investigated by measurements of the current-dependent gain and index spectra and by self-consistent simulation

The threshold current density of narrow (1.5 μm) ridge-waveguide InGaN multi-quantum-well laser diodes, as well as the shape of their lateral far-field patterns, strongly depend on the etch depth of the ridge waveguide. Both effects can be attributed to strong index-antiguiding. A value of the antiguiding factor R = 10 is experimentally determined near threshold by measurements of the current-dependent gain and refractive index spectra. The device performances are simulated self-consistently solving the Schrödinger-Poisson equations and the equations for charge transport and waveguiding. Assuming a carrier-induced index change which matches the experimentally determined antiguiding factor, both the measured high threshold current and the shape of the far-field pattern of lasers with shallow ridges can be reproduced theoretically.

cond-mat.mes-hall↗