arXiv subjects

Umamahesh Thupakula

Publications and source records attributed to Umamahesh Thupakula.

3 recordsLinked to original sources

arXiv2022

Planar bridging an atomically precise surface trench with a single molecular wire on an Au(111) surface

In a bridge configuration, a single graphene nanoribbon (GNR) is positioned with a picometer precision over a trench in between two monoatomic steps on an Au(111) surface. This GNR molecular wire adopts a deformed conformation towards the down terrace in between the two contact step edges. Using differential conductance dI/dV mapping from a low-temperature scanning tunneling microscope, it is demonstrated how the electronic delocalization along GNR is cut at each contact by its down curvature. It points out the need to bring conductive nanocontacts backside of the support for preserving the front side GNR planar conformation.

cond-mat.mes-hall↗

arXiv2021

Coherent and incoherent tunneling into YSR states revealed by atomic scale shot-noise spectroscopy

The pair breaking potential of individual magnetic impurities in s-wave superconductors generates localized states inside the superconducting gap commonly referred to as Yu- Shiba-Rusinov (YSR) states whose isolated nature makes them ideal building blocks for artificial structures that may host Majorana fermions. One of the challenges in this endeavor is to understand their intrinsic lifetime, $\hbar/Λ$, which is expected to be limited by the inelastic coupling with the continuum thus leading to decoherence. Here we use shot-noise scanning tunneling microscopy to reveal that electron tunnelling into superconducting 2H-NbSe$_2$ mediated by YSR states is ordered as function of time, as evidenced by a reduction of the noise. Moreover, our data show the concomitant transfer of charges e and 2e, indicating that incoherent single particle and coherent Andreev processes operate simultaneously. From the quantitative agreement between experiment and theory we obtain $Λ$ = 1 $μ$eV $\ll$ $k_BT$ demonstrating that shot-noise can probe energy- and time scales inaccessible by conventional spectroscopy whose resolution is thermally limited.

cond-mat.supr-con↗

arXiv2020

Structural and electronic properties of the pure and stable elemental 3D topological Dirac semimetal $α$-Sn

In-plane compressively strained $α$-Sn films have been theoretically predicted and experimentally proven to possess non-trivial electronic states of a 3D topological Dirac semimetal. The robustness of these states typically strongly depends on purity, homogeneity and stability of the grown material itself. By developing a reliable fabrication process, we were able to grow pure strained $α$-Sn films on InSb(100), without heating of the substrate during growth, nor using any dopants. The $α$-Sn films were grown by molecular beam epitaxy, followed by experimental verification of the achieved chemical purity and structural properties of the film's surface. Local insight into the surface morphology was provided by scanning tunneling microscopy. We detected the existence of compressive strain using Mössbauer spectroscopy and we observed a remarkable robustness of the grown samples against ambient conditions. The topological character of the samples was confirmed by angle-resolved photoemission spectroscopy, revealing the Dirac cone of the topological surface state. Scanning tunneling spectroscopy, moreover, allowed obtaining an improved insight into the electronic structure of the 3D topological Dirac semimetal $α$-Sn above the Fermi level.

cond-mat.mtrl-sci↗