arXiv subjects

Umesh Waghmare

Publications and source records attributed to Umesh Waghmare.

10 recordsLinked to original sources

arXiv2026

Classification of Metal - Insulator Transitions: Relating characteristic Properties to Quantum Chemical Bonding Descriptors

Pressure induced metal insulator transitions (MIT) are classified by the evolution of characteristic optoelectronic and vibrational properties calculated with density functional theory. Three classes emerge: ionic solids metallize continuously at band-gap closure with hardening phonons; covalent solids show discontinuous changes in atomic arrangement and optical phonon frequencies; a third class exhibits complete lattice softening and drastically enhanced electron phonon coupling. A one dimensional hydrogen chain reproduces this behavior and serves as a toy model of the underlying bonding mechanism, termed metavalent. Two quantum-chemical descriptors capture the distinct bonding changes behind the three classes. In metavalent solids, competing electron localization and delocalization yield soft optical modes and Peierls distortions on the insulating side, superconductivity on the metallic side, and low lattice thermal conductivity near the MIT.

cond-mat.mtrl-sci↗

arXiv2026

Nitrogen-Vacancy-Mediated Magnetism in Sputtered GdN Thin Films

Among rare-earth nitrides (RENs), gadolinium nitride (GdN) stands out as a promising material for spintronics owing to its distinctive combination of semiconducting behavior, strong exchange interactions, and intrinsically soft ferromagnetism. Its relatively high Curie temperature and large saturation magnetization make it an attractive candidate for device concepts such as non-volatile memory elements and spin-based transistors, motivating efforts toward low-cost, uniform, and compositionally controlled thin-film growth. In this work, we deposited GdN thin films on SiO2/AlN substrates using DC sputtering under reactive nitridation conditions, with thicknesses varying from 18 to 180 nm, and systematically investigated their structural and magnetic properties. The films exhibit soft ferromagnetic ordering, characterized by a coercive field of approximately 200 Oe and a Curie temperature (Tc) near 70 K. Structural analysis reveals lattice distortions and local strain associated with nitrogen-vacancy defects, whose concentration varies with film thickness. Our theoretical studies establish a direct correlation between the observed Raman modes of the GdN lattice and the reduced magnetization induced by nitrogen vacancies. These vacancies give rise to defect-mediated ferromagnetism, leading to a measurable enhancement of Tc from 68 K to 82 K across the studied thickness range. The observed magnetic behavior is well described by the bound magnetic polaron (BMP) model, confirming that nitrogen vacancies are key contributors to ferromagnetic ordering while preserving the soft-magnetic character intrinsic to GdN. This study underscores the pivotal role of defect engineering in optimizing GdN thin films for spintronics applications.

cond-mat.mtrl-sci↗

arXiv2025

Vector Spin Chirality Switching in Noncollinear Antiferromagnets

Spin chirality provides a powerful route to control magnetic and topological phases in materials, enabling next-generation spintronic and quantum technologies. Coplanar noncollinear antiferromagnets with Kagome lattice spin geometries host vector spin chirality (VSC), the handedness of spin arrangement, and offer an excellent platform for chirality-driven phase control. However, the microscopic mechanisms governing VSC switching and its coupling to magnetic order, electronic structure, and quantum geometry remain elusive, with experimental evidence still lacking. Here, we present conclusive experimental evidence of temperature-driven VSC switching in an archetypal noncollinear antiferromagnetic manganese chromium nitride (Mn3CrN) epitaxial thin films. The VSC switching induces a concomitant quantum-geometric and Lifshitz transition, manifested through a pronounced peak in anomalous Hall conductivity remanence, a metal-insulator-like crossover in longitudinal resistivity, and a distinct evolution of x-ray magnetic circular dichroic signal. The reversal of VSC reconstructs the spin configuration, Fermi surface topology and Berry curvature, marking a unified magnetic-electronic-quantum geometric transition. This emergent behaviour, captured through magneto-transport and magneto-optic measurements, and supported by first-principles theory establish VSC as an active control knob for chirality-driven phase engineering and the design of multifunctional quantum devices.

cond-mat.mtrl-sci↗

arXiv2025

Incommensurate Moir\'e Stacking and Landau Quantization Without External Magnetic Field in Turbostratic Graphene

Turbostratic multilayer graphene, composed of randomly twisted and stacked graphene sheets, offers a naturally disordered yet tunable platform for exploring moir\'e physics beyond tedious artificial stacking. Using scanning tunneling microscopy/spectroscopy (STM/STS) and Raman analysis, we uncover a wide distribution of twist angles and stacking configurations spontaneously formed across large-area turbostratic films. In several regions, we identify overlapping incommensurate moir\'e patterns consistent with locally chiral trilayer stacking. We observe van Hove singularities and reconstructed Dirac-like spectra whose angle dependence supports strong interlayer electronic coherence. In the highly strained trilayered regions, we observe peaks in the local density-of states with characteristic scaling of the quantized Landau levels strikingly even in the absence of a magnetic field. They arise from the strain-induced pseudo-magnetic fields (~ 26 T), making turbostratic graphene a single natural platform to explore the physics of moir\'e structures as well as of the pseudo-electromagnetic fields.

cond-mat.mes-hall↗

arXiv2024

Phonon-pair-driven Ferroelectricity Causes Costless Domain-walls and Bulk-boundary Duality

Ferroelectric domain walls, recognized as distinct from the bulk in terms of symmetry, structure, and electronic properties, host exotic phenomena including conductive walls, ferroelectric vortices, novel topologies, and negative capacitance. Contrary to conventional understanding, our study reveals that the structure of domain walls in HfO2 closely resembles its bulk. First, our first-principles simulations unveil that the robust ferroelectricity is supported by bosonic pairing of all the anionic phonons in bulk HfO2. Strikingly, the paired phonons strongly bond with each other and successfully reach the center of the domain wall without losing their integrity and produce bulk-like domain walls. We then confirmed preservation of the bulk phonon displacements and consequently full revival of the bulk structure at domain walls via aberration-corrected STEM. The newly found duality between the bulk and the domain wall sheds light on previously enigmatic properties such as zero-energy domain walls, perfect Ising-type polar ordering, and exceptionally robust ferroelectricity at the sub-nm scales. The phonon-pairing discovered here is robust against physical boundaries such as domain walls and enables zero momentum and zero-energy cost local ferroelectric switching. This phenomenon demonstrated in Si-compatible ferroelectrics provides a novel technological platform where data storage on domain walls is as feasible as that within the domains, thereby expanding the potential for high-density data storage and advanced ferroelectric applications.

cond-mat.mtrl-sci↗

arXiv2023

Site-selective polar compensation of Mott electrons in a double perovskite heterointerface

Double perovskite oxides (DPOs) with two transition metal ions ($A_2$$BB^\prime$O$_6$) offer a fascinating platform for exploring exotic physics and practical applications. Studying these DPOs as ultrathin epitaxial thin films on single crystalline substrates can add another dimension to engineering electronic, magnetic, and topological phenomena. Understanding the consequence of polarity mismatch between the substrate and the DPO would be the first step towards this broad goal. We investigate this by studying the interface between a prototypical insulating DPO Nd$_2$NiMnO$_6$ and a wide-band gap insulator SrTiO$_3$. The interface is found to be insulating in nature. By combining several experimental techniques and density functional theory, we establish a site-selective charge compensation process that occurs explicitly at the Mn site of the film, leaving the Ni sites inert. We further demonstrate that such surprising selectivity, which cannot be explained by existing mechanisms of polarity compensation, is directly associated with their electronic correlation energy scales. This study establishes the crucial role of Mott physics in polar compensation process and paves the way for designer doping strategies in complex oxides.

cond-mat.mtrl-sci↗

arXiv2023

Potential energy surface prediction of Alumina polymorphs using graph neural network

The process of design and discovery of new materials can be significantly expedited and simplified if we can learn effectively from available data. Deep learning (DL) approaches have recently received a lot of interest for their ability to speed up the design of novel materials by predicting material properties with precision close to experiments and ab-initio calculations. The application of deep learning to predict materials properties measured by experiments are valuable yet challenging due to the limited amount of experimental data. Most of the existing approaches to predict properties from computational data have also been directed towards specific material properties. In this work, we extend this approach, by proposing Landscape Crystal Graph Convolution Network(LCGCN), an accurate and transferable deep learning framework based on graph convolutional networks. LCGCN directly learns the potential energy surface (PES) from atomic configurations. This approach can enable transferable models that can predict different material properties. We apply this framework to bulk crystals (i.e. Al2O3), and test it by calculating potential energy surfaces at different temperatures and across different phases of crystal.

cond-mat.mtrl-sci↗

arXiv2015

SCAN: An Efficient Density Functional Yielding Accurate Structures and Energies of Diversely-Bonded Materials

Kohn-Sham density functional theory (DFT) is a widely-used electronic structure theory for materials as well as molecules. DFT is needed especially for large systems, ab initio molecular dynamics, and high-throughput searches for functional materials. DFT's accuracy and computational efficiency are limited by the approximation to its exchange-correlation energy. Currently, the local density approximation (LDA) and generalized gradient approximations (GGAs) dominate materials computation mainly due to their efficiency. We show here that the recently developed non-empirical strongly constrained and appropriately normed (SCAN) meta-GGA improves significantly over LDA and the standard Perdew-Burke-Ernzerhof GGA for geometries and energies of diversely-bonded materials (including covalent, metallic, ionic, hydrogen, and van der Waals bonds) at comparable efficiency. Thus SCAN may be useful even for soft matter. Often SCAN matches or improves upon the accuracy of a computationally expensive hybrid functional, at almost-GGA cost. SCAN is therefore expected to have a broad impact on materials science.

cond-mat.mtrl-sci↗

arXiv2007

Bond Stiffening in Nanoclusters and its Consequences

We have used density functional perturbation theory to investigate the stiffness of interatomic bonds in small clusters of Si, Sn and Pb. As the number of atoms in a cluster is decreased, there is a marked shortening and stiffening of bonds. The competing factors of fewer but stiffer bonds in clusters result in softer elastic moduli but higher (average) frequencies as size is decreased, with clear signatures of universal scaling relationships. A significant role in understanding trends is played by the coordination number of the bulk structure: the higher this is, the lesser is the relative softening of elastic constants, and the greater the relative damping of vibrational amplitudes, for clusters compared to the bulk. Our results could provide a framework for understanding recent reports that some clusters remain solid above the bulk melting temperature.

cond-mat.other↗

arXiv2000

First principles study of strain/electronic interplay in ZnO; Stress and temperature dependence of the piezoelectric constants

We present a first-principles study of the relationship between stress, temperature and electronic properties in piezoelectric ZnO. Our method is a plane wave pseudopotential implementation of density functional theory and density functional linear response within the local density approximation. We observe marked changes in the piezoelectric and dielectric constants when the material is distorted. This stress dependence is the result of strong, bond length dependent, hybridization between the O $2p$ and Zn $3d$ electrons. Our results indicate that fine tuning of the piezoelectric properties for specific device applications can be achieved by control of the ZnO lattice constant, for example by epitaxial growth on an appropriate substrate.

cond-mat.mtrl-sci↗