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Uppalaiah Erugu

Publications and source records attributed to Uppalaiah Erugu.

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Large Magneto-Electric Resistance in the Topological Dirac Semimetal alpha Sn

The spin-momentum locking of surface states in topological quantum materials can produce a resistance that scales linearly with magnetic and electric fields. Such a bilinear magneto-electric resistance (BMER) effect offers a completely new approach for magnetic storage and magnetic field sensing applications. The effects demonstrated so far, however, are relatively weak or for low temperatures. Strong room-temperature BMER effects have now been found in topological Dirac semimetal alpha-Sn thin films. The epitaxial alpha-Sn films were grown by sputtering on silicon substrates. They showed BMER responses that are 10^6 times larger than previously reported at room temperature and also larger than that previously reported at low temperatures. These results represent a major advance toward realistic BMER applications. The data also made possible the first characterization of the three-dimensional, Fermi-level spin texture of topological surface states in alpha-Sn.

cond-mat.mes-hall

Small Energy Gap Revealed in CrBr3 by Scanning Tunneling Spectroscopy

CrBr$_{3}$ is a layered van der Waals material with magnetic ordering down to the 2D limit. For decades, based on optical measurements, it is believed that the energy gap of CrBr$_{3}$ is in the range of 1.68-2.1 eV. However, controversial results have indicated that the band gap of CrBr$_{3}$ is possibly smaller than that. An unambiguous determination of the energy gap is critical to the correct interpretations of the experimental results of CrBr$_{3}$. Here, we present the scanning tunneling microscopy and spectroscopy (STM/S) results of CrBr$_{3}$ thin and thick flakes exfoliated onto pyropytic graphite (HOPG) surfaces and density functional theory (DFT) calculations to reveal the small energy gap (peak-to-peak energy gap to be 0.57 eV $\pm$ 0.04 eV; or the onset signal energy gap to be 0.29 $\pm$ 0.05 eV from dI/dV spectra). Atomic resolution topography images show the defect-free crystal structure and the dI/dV spectra exhibit multiple peak features measured at 77 K. The conduction band - valence band peak pairs in the multi-peak dI/dV spectrum agree very well with all reported optical transitions. STM topography images of mono- and bi-layer CrBr$_{3}$ flakes exhibit edge degradation due to short air exposure (~15 min) during sample transfer. The unambiguously determined small energy gap settles the controversy and is the key in better understanding CrBr$_{3}$ and similar materials.

cond-mat.mtrl-sci