arXiv subjects

Uri Peskin

Publications and source records attributed to Uri Peskin.

14 recordsLinked to original sources

arXiv2026

Collective Electronic Entanglement via Infrared Cavity-Induced Vibronic Transduction

Polaritonic architectures seek to engineer molecular properties by hybridizing localized degrees of freedom with delocalized optical cavity fields. However, scaling laws impose a severe bottleneck on N-molecule collective strong coupling: because each molecule contributes only a fractional share to the collective state, localized responses undergo O(1/N) ensemble dilution. We demonstrate a violation of this scaling using fluorescence-encoded infrared spectroscopy of molecular ensembles under vibrational strong coupling, where macroscopically synchronized electronic responses scale as O(1). This scale-invariance reveals a regime of vibronic quantum transduction, where non-local vibrational entanglement is translated into collective electronic entanglement. By demonstrating the generation of macroscopically entangled electronic states from vibro-polaritons without an O(1/N) penalty, these results provide a scalable framework for room-temperature quantum technologies and coherent steering of non-adiabatic chemical pathways.

quant-ph↗

arXiv2022

How an electrical current can stabilize a molecular nanojunction

The stability of molecular junctions under transport is of the utmost importance for the field of molecular electronics. This question is often addressed within the paradigm of current-induced heating of nuclear degrees of freedom or current-induced forces acting upon the nuclei. At the same time, an essential characteristic of the failure of a molecular electronic device is its changing conductance -- typically from a finite value for the intact device to zero for a device that lost its functionality. In this publication, we focus on the current-induced changes in the molecular conductance, which are inherent to molecular junctions at the limit of mechanical stability. We employ a numerically exact framework based on the hierarchical equations of motion approach, which treats both electronic and nuclear degrees of freedom on an equal footing and does not impose additional assumptions. Studying generic model systems for molecular junctions with dissociative potentials for a wide range of parameters spanning the adiabatic and the nonadiabatic regime, we find that molecular junctions that exhibit a decrease in conductance upon dissociation are more stable than junctions that are more conducting in their dissociated state. This represents a new mechanism that stabilizes molecular junctions under current. Moreover, we identify characteristic signatures in the current of breaking junctions related to the interplay between changes in the conductance and the nuclear configuration and show how these are related to properties of the leads rather than characteristics of the molecule itself.

cond-mat.mes-hall↗

arXiv2022

Nonequilibrium reaction rate theory: Formulation and implementation within the hierarchical equations of motion approach

The study of chemical reactions in environments under nonequilibrium conditions has been of interest recently in a variety of contexts, including current-induced reactions in molecular junctions and scanning tunneling microscopy experiments. In this work, we outline a fully quantum mechanical, numerically exact approach to describe chemical reaction rates in such nonequilibrium situations. The approach is based on an extension of the flux correlation function formalism to nonequilibrium conditions and uses a mixed real and imaginary time hierarchical equations of motion approach for the calculation of rate constants. As a specific example, we investigate current-induced intramolecular proton transfer reactions in a molecular junction for different applied bias voltages and molecule-lead coupling strengths.

physics.chem-ph↗

arXiv2021

Unraveling current-induced dissociation mechanisms in single-molecule junctions

Understanding current-induced bond rupture in single-molecule junctions is both of fundamental interest and a prerequisite for the design of molecular junctions, which are stable at higher bias voltages. In this work, we use a fully quantum mechanical method based on the hierarchical quantum master equation approach to analyze the dissociation mechanisms in molecular junctions. Considering a wide range of transport regimes, from off-resonant to resonant, non-adiabatic to adiabatic transport, and weak to strong vibronic coupling, our systematic study identifies three dissociation mechanisms. In the weak and intermediate vibronic coupling regime, the dominant dissociation mechanism is stepwise vibrational ladder climbing. For strong vibronic coupling, dissociation is induced via multi-quantum vibrational excitations triggered either by a single electronic transition at high bias voltages or by multiple electronic transitions at low biases. Furthermore, the influence of vibrational relaxation on the dissociation dynamics is analyzed and strategies for improving the stability of molecular junctions are discussed.

cond-mat.mes-hall↗

arXiv2020

Current-induced dissociation in molecular junctions beyond the paradigm of vibrational heating: The role of anti-bonding electronic states

The interaction between electronic and nuclear degrees of freedom in single-molecule junctions is an essential mechanism, which may result in the current-induced rupture of chemical bonds. As such, it is fundamental for the stability of molecular junctions and for the applicability of molecular electronic devices. In this publication, we study current-induced bond rupture in molecular junctions using a numerically exact scheme, which is based on the hierarchical quantum master equation (HQME) method in combination with a discrete variable representation for the nuclear degrees of freedom. Employing generic models for molecular junctions with dissociative nuclear potentials, we identify distinct mechanisms leading to dissociation, namely the electronic population of anti-bonding electronic states and the current-induced heating of vibrational modes. Our results reveal that the latter plays a negligible role whenever the electronic population of anti-bonding states is energetically possible. Consequently, the significance of current-induced heating as a source for dissociation in molecular junctions involving an active anti-bonding state is restricted to the non-resonant transport regime, which reframes the predominant paradigm in the field of molecular electronics.

cond-mat.mes-hall↗

arXiv2018

Current-induced bond rupture in single-molecule junctions

Electronic-vibrational coupling in single-molecule junctions may result in current-induced bond rupture and is thus an important mechanism for the stability of molecular junctions. We use the hierarchical quantum master equation (HQME) method in combination with the quasi-classical Ehrenfest approach for the nuclear degrees of freedom to simulate current-induced bond rupture in single-molecule junctions. Employing generic models for molecular junctions with dissociative nuclear potentials, we analyze the underlying mechanisms. In particular, we investigate the dependence of the dissociation probability on the applied bias voltage and the molecule-lead coupling strength. The results show that an applied bias voltage can not only lead to dissociation of the molecular junction, but under certain conditions can also increase the stability of the molecule.

cond-mat.mes-hall↗

arXiv2017

On the Long-Range Exciton Transport in H-Aggregated Heterotriangulene Chains

Self-assembled aggregates of pigment molecules are potential building blocks for excitonic circuits that find their application in energy conversion and optical signal processing. Recent experimental studies of one-dimensional heterotriangulene supramolecular aggregates suggested that singlet excitons in these structures can propagate on several micron distances. We explore this possibility theoretically by combining electronic structure calculations with microscopic models for exciton transport. Detailed characterization of the structural disorder and exciton decoherence is provided. We argue that conventional exciton transport models give about an order of magnitude shorter estimates for the exciton propagation length which suggest that there are other possible explanations of the experimental results.

cond-mat.mes-hall↗

arXiv2017

High voltage assisted mechanical stabilization of single-molecule junctions

The realization of molecular-based electronic devices depends to a large extent on the ability to mechanically stabilize the involved molecular bonds, while making use of efficient resonant charge transport through the device. Resonant charge transport can induce vibrational instability of molecular bonds, leading to bond rupture under a bias voltage. In this work, we go beyond the wide-band approximation in order to study the phenomenon of vibrational instability in single molecule junctions and show that the energy-dependence of realistic molecule-leads couplings affects the mechanical stability of the junction. We show that the chemical bonds can be stabilized in the resonant transport regime by increasing the bias voltage on the junction. This research provides guidelines for the design of mechanically stable molecular devices operating in the regime of resonant charge transport.

cond-mat.mes-hall↗

arXiv2015

On the qualitative difference between phonon-assisted transition rates of electrons and holes in organic disordered semiconductors

We suggest universal expressions for the rates of charge transition between molecules in organic disordered semiconductors, which differ between electrons and holes. The donor and acceptor molecules (monomers) are represented in terms of their frontier orbitals, with asymptotic tails reflecting the different asymptotic potential wells which bind different charge carriers. This model predicts an asymmetry of the tunnel factors and the interaction with phonon field with respect to electrons and holes, leading to different formulas for the transition rates and the thermal mobility of the different charge carriers. This is demonstrated explicitly for transitions between organic molecules initiated by fluctuations of the inter-molecular distance due to deformation of by the phonon field, but the asymmetry between the carriers is universal and should be essential for quantitative analysis of charge transport in any disordered material. In particular, in the framework of classical Mott considerations our result predict an unusual temperature dependence of holes mobility, $\sim (T_0/T)^r \exp -( T_0/T)^{1/4}$, where $r = ( E_F^h)^{-1/2}$, and $E_F^h$ is the energy of hole at the Fermi level in atomic units.

cond-mat.dis-nn↗

arXiv2010

Transient Dynamics in Molecular Junctions: Coherent Bichromophoric Molecular Electron Pumps

The possibility of using single molecule junctions as electron pumps for energy conversion and storage is considered. It is argued that the small dimensions of these systems enable to make use of unique intra-molecular quantum coherences in order to pump electrons between two leads and to overcome relaxation processes which tend to suppress the pumping efficiency. In particular, we demonstrate that a selective transient excitation of one chromophore in a bi-chromophoric donor-bridge-acceptor molecular junction model yields currents which transfer charge (electron and holes) unevenly to the two leads in the absence of a bias potential. The utility of this mechanism for charge pumping in steady state conditions is proposed.

quant-ph↗

arXiv2010

Mode-selective vibrational excitation induced by nonequilibrium transport processes in single-molecule junctions

In a nanoscale molecular junction at finite bias voltage,the intra-molecular distribution of vibrational energy can strongly deviate from the thermal equilibrium distribution and specific vibrational modes can be selectively excited in a controllable way,regardless of the corresponding mode frequency. This is demonstrated for generic models of asymmetric molecular junctions with localized electronic states, employing a master equation as well as a nonequilibrium Green's function approach. It is shown that the applied bias voltage controls the excitation of specific vibrational modes coupled to these states, by tuning their electronic population,which influences the efficiency of vibrational cooling processes due to energy exchange with the leads.

cond-mat.mes-hall↗

arXiv2008

Entanglement, Berry Phases, and Level Crossings for the Atomic Breit-Rabi Hamiltonian

The relation between level crossings, entanglement, and Berry phases is investigated for the Breit-Rabi Hamiltonian of hydrogen and sodium atoms, describing a hyperfine interaction of electron and nuclear spins in a magnetic field. It is shown that the entanglement between nuclear and electron spins is maximum at avoided crossings. An entangled state encircling avoided crossings acquires a marginal Berry phase of a subsystem like an instantaneous eigenstate moving around real crossings accumulates a Berry phase. Especially, the nodal points of a marginal Berry phase correspond to the avoided crossing points.

quant-ph↗

arXiv2002

Traversal times for resonant tunneling

The tunneling time of particle through given barrier is commonly defined in terms of "internal clocks" which effectively measure the interaction time with internal degrees of freedom of the barrier. It is known that this definition of the time scale for tunneling is not unique in the sense that it depends on the clock used to define it. For the case of resonance tunneling, a particular choice that in the limit of a high/broad square barrier yields the original result of Buttiker and Landauer (Phys. Rev. Lett. 1982, 49, 1739) is correlated to the lifetime of the resonance state. This is illustrated for analytically solvable one-dimensional double barrier models and for a realistic model of electron tunneling through a static water barrier. The latter calculation constitutes a novel application of this concept to a 3-dimensional model, and the observed structure in the energy dependence of the computed traversal time reflects the existence of transient tunneling resonances associated with instantaneous water structures. These models, characterized by the existence of shape resonances in the barrier, make it possible to examine different internal clocks that were proposed for measuring tunneling times in situations where a "clock independent" intrinsic time scale (the resonance life time) for the tunneling time exists. It is argued that this time may be used in order to estimate the relative importance of dynamical barrier processes that affect the tunneling probability.

cond-mat↗

arXiv2001

Traversal time for electron tunneling in water

The traversal time for tunneling is a measure of the time during which the transmitted particle can be affected by interactions localized in the barrier. The Buttiker-Landauer approach, which estimates this time by imposing an internal clock on the system, has been applied so far for relatively simple 1-dimensional models. Here we apply this approach to estimate the traversal time for electron tunneling through a realistic 3-dimensional model of a water layer. Observed structure in the energy dependence of times computed reflects the existence of transient tunneling resonances associated with instantaneous water structures.

cond-mat↗