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Ute Kolb

Publications and source records attributed to Ute Kolb.

3 recordsLinked to original sources

Controlling nitrogen incorporation in (Eu,Ba,Ca)TiO$_3$-derived perovskite-type oxynitrides through Fermi Level Engineering

Defect states directly influence not only functional properties, but also oxynitride formation during ammonolysis. Along with structural stability and charge balance, these defects can cause non-uniform nitrogen incorporation. To address this, the recently proposed Fermi Level Engineering concept provides a powerful alternative of rationalising oxynitride synthesis. By using the electron chemical potential, i.e., the Fermi level, as a unique descriptor, this approach can predict, understand, and manipulate defect formation enthalpies and charge transition levels, subsequently allowing to incorporate defect-property correlations to the concept. This work combines theoretical modelling and experimental characterisation of barium titanium oxynitrides to explain an intrinsic, self-limiting nitridation process. Progressive nitrogen incorporation causes a Fermi level downward shift, leaving further nitrogen substitution on oxygen sites energetically unfavourable, up to 0.03 N per unit formula. We demonstrate that A-site cation substitution in Eu$_{1-x}$Ba$_x$TiO$_3$- and Eu$_{1-x}$Ca$_x$TiO$_3$-derived oxynitrides can be applied to control compensation of the additional negative charge from N$^{3-}$ and keep the Fermi level high. The Eu$^{2+/3+}$ redox couple enables substitution of oxygen by nitrogen through pinning of the Fermi level at the europium charge transition level, at $\sim$ 2.9 eV above the VBM. This allows for higher nitrogen uptake of up to 0.65 per formula unit (taken from hot gas extraction) through a more controlled process. Further incorporation is then limited by an intra-Ti(O,N)$_6$ octahedra distortion due to internal bond-angle variance. These findings demonstrate that Fermi Level Engineering provides a pathway to predict and overcome intrinsic synthetic and thermodynamic limitations in oxynitride synthesis.

cond-mat.mtrl-sci↗

Subamorphous thermal conductivity of crystalline half-Heusler superlattices

The quest to improve the thermoelectric figure of merit has mainly followed the roadmap of lowering the thermal conductivity while keeping unaltered the power factor of the material. Ideally an electron-crystal phonon-glass system is desired. In this work, we report an extraordinary reduction of the cross-plane thermal conductivity in crystalline (TiNiSn):(HfNiSn) half-Heusler superlattices. We create SLs with thermal conductivities below the effective amorphous limit, which is kept in a large temperature range (120-300 K). We measured thermal conductivity at room temperature values as low as 0.75 W/(m K), the lowest thermal conductivity value reported so far for half-Heusler compounds. By changing the deposition conditions, we also demonstrate that the thermal conductivity is highly impacted by the way the single segments of the superlattice grow. These findings show a huge potential for thermoelectric generators where an extraordinary reduction of the thermal conductivity is required but without losing the crystal quality of the system.

cond-mat.mtrl-sci↗

Reduced thermal conductivity of TiNiSn/HfNiSn superlattices

Diminution of the thermal conductivity is a crucial aspect in thermoelectric research. We report a systematic and significant reduction of the cross-plane thermal conductivity in a model system consisting of DC sputtered TiNiSn and HfNiSn half-Heusler superlattices. The reduction of $κ$ is measured by the 3$ω$ method and originates from phonon scattering at the internal interfaces. Heat transport in the superlattices is calculated based on Boltzmann transport theory, including a diffusive mismatch model for the phonons at the internal interfaces. Down to superlattice periodicity of 3 nm the phonon spectrum mismatch between the superlattice components quantitatively explains the reduction of $κ$. For very thin individual layers the interface model breaks down and the artificial crystal shows an enhanced $κ$. We also present an enhanced ZT value for all investigated superlattices compared to the single TiNiSn and HfNiSn films.

cond-mat.mtrl-sci↗