arXiv subjects

V. A. Dediu

Publications and source records attributed to V. A. Dediu.

5 recordsLinked to original sources

arXiv2024

Anomalous hardening of spin waves in cobalt/molecular-semiconductor heterostructures reveals strongly anisotropic spinterface magnetism

The interface between a ferromagnetic metal and an organic molecular semiconductor, commonly referred to as a spinterface, is an important component for advancing spintronic technologies. Hybridization of the ferromagnetic-metal surface d orbitals with the molecular-semiconductor p orbitals induces profound modifications not only in the interfacial molecular layer, but also in the surface ferromagnetic-metal atomic layer. These effects are particularly pronounced at low temperatures, manifesting as substantial modifications in the magnetic properties of thin-film magnetic-metal/organic heterostructures. Despite extensive research and interest, the magnetic-ordering and magnetic-properties of the spinterface remain poorly understood. Using ultrafast time-resolved magneto-optical spectroscopy, to investigate the magnetic dynamics in such heterostructures, we unveil the unique spinterface-magnetism and its universality for a broad variety of cobalt/molecular-semiconductor interfaces. In particular, our findings demonstrate the presence of highly anisotropic low-temperature superparamagnetism at the cobalt/molecular-semiconductor spinterface. This anisotropic interfacial superparamagnetism is likely driven by strong chemical modifications in the cobalt interfacial layer caused by the chemisorbed molecular layer. These results highlight the pivotal role of molecular chemisorption in tuning the magnetic properties at spinterfaces, paving the way for future spintronic applications.

cond-mat.mtrl-sci↗

arXiv2019

Enhancing Light Emission in Interface Engineered Spin-OLEDs Through Spin-Polarized Injection at High Voltages

The quest for a spin-polarized organic light emitting diode (spin-OLED) is a common goal in the emerging fields of molecular electronics and spintronics. In this device two ferromagnetic electrodes are used to enhance the electroluminescence intensity of the OLED through a magnetic control of the spin polarization of the injected carriers. The major difficulty is that the driving voltage of an OLED device exceeds of a few volts, while spin injection in organic materials is only efficient at low voltages. We report here the fabrication of a spin-OLED that uses a conjugated polymer as bipolar spin collector layer and ferromagnetic electrodes. Through a careful engineering of the organic/inorganic interfaces we have succeeded in obtaining a light-emitting device showing spin-valve effects at high voltages (up to 14 V). This has allowed us to detect a magneto-electroluminescence enhancement on the order of a 2.4 % at 9 V for the antiparallel configuration of the magnetic electrodes. This observation provides evidence for the long-standing fundamental issue of injecting spins from magnetic electrodes into the frontier levels of a molecular semiconductor. Our finding opens the way for the design of multifunctional devices coupling the light and the spin degrees of freedom.

cond-mat.mes-hall↗

arXiv2015

Magnetoresistance in organic spintronic devices: the role of nonlinear effects

We derive kinetic equations describing injection and transport of spin polarized carriers in organic semiconductors with hopping conductivity via an impurity level. The model predicts a strongly voltage dependent magnetoresistance, defined as resistance variation between devices with parallel and antiparallel electrode magnetizations (spin valve effect). The voltage dependence of the magnetoresistance splits into three distinct regimes. The first regime matches well known inorganic spintronic regimes, corresponding to barrier controlled spin injection or the well known conductivity mismatch case. The second regime at intermediate voltages corresponds to strongly suppressed magnetoresistance. The third regime develops at higher voltages and accounts for a novel paradigm. It is promoted by the strong non-linearity in the charge transport which strength is characterized by the dimensionless parameter $eU/k_BT$. This nonlinearity, depending on device conditions, can lead to both significant enhancement or to exponential suppression of the spin valve effect in organic devices. We believe that these predictions are valid beyond the case of organic semiconductors and should be considered for any material characterized by strongly non-linear charge transport.

cond-mat.mes-hall↗

arXiv2012

Extraordinary magnetoresistance of organic semiconductors : Hopping conductance via non-zero angular momentum orbitals

Highly-anisotropic in-plane magneto-resistance (MR) in graphite (HOPG) samples has been recently observed (Y. Kopelevich et al., arXiv:1202.5642) which is negative and linear in low fields in some current direction while it is giant, super-linear and positive in the perpendicular direction. In the framework of the hopping conductance theory via non-zero angular momentum orbitals we link extraordinary MRs in graphite and in organic insulators (OMAR) observed in about the same magnetic fields. The theory predicts quadratic negative MR (NMR) when there is a time-reversal symmetry (TRS), and linear NMR if TRS is broken. We argue that the observed linear NMR could be a unique signature of the broken TRS both in graphite and organic compounds. While some local paramagnetic centers are responsible for the broken TRS in organic insulators, a large diamagnetism of our HOPG samples may involve a more intriguing scenario of TRS breaking.

cond-mat.mes-hall↗

arXiv1999

Micro-Raman and resistance measurements of epitaxial La0.7Sr0.3MnO3 films

The Channel-Spark method was used for deposition of highly oriented ferromagnetic La0.7Sr0.3MnO3 films on NdGaO3 substrates. It was found that additional oxygen decreases the film quality suppressing the Curie temperature and metal-insulator transition below the room temperature. To achieve the best quality of the films the samples were either annealed in high vacuum at deposition temperature or even deposited in argon atmosphere with no oxygen annealing. For such films the resistive measurements showed a metallic behaviour in the interval 10-300 K in accordance with the high Curie point (Tc 350 K). Micro-Raman analysis indicate that the La0.7Sr0.3MnO3 films are well ordered, while some outgrowths show stoichiometrical deviations.

cond-mat.str-el↗