arXiv subjects

V. A. Golyashov

Publications and source records attributed to V. A. Golyashov.

15 recordsLinked to original sources

arXiv2026

Tuning topological phase and Dirac point position via Pb and Sb substitution in Mn$_{1-x}$Pb$_{x}$(Bi$_{1-y}$Sb$_{y}$)$_{2}$Te$_{4}$

This study presents a systematic investigation of Mn$_{1-x}$Pb$_{x}$(Bi$_{1-y}$Sb$_{y}$)$_{2}$Te$_{4}$ crystals over a wide range of concentrations (x = 10-60%, y = 5-60%). It was found that the value of the bulk band gap is determined exclusively by the Pb concentration and it closes at Pb 40-50 %, which corresponds to a topological phase transition. The position of the Dirac point is determined by the Pb/Sb ratio, rather than the absolute Sb content. The magnetic properties depend on the dilution of the Mn sublattice by Pb and are weakly sensitive to Sb. We show that the simultaneous substitution of Mn and Bi allows independent control of the topological phase and the position of the Fermi level.

cond-mat.mtrl-sci↗

arXiv2026

Elucidating Na$_2$KSb band structure: near-band-gap photoemission spectroscopy and DFT calculations

The electronic band structure of Na$_{2}$KSb was studied by a combination of low-energy photoemission spectroscopy and density functional theory (DFT) calculations. The optical and photoemission quantum efficiency (QE) spectra, along with longitudinal energy distribution curves (EDCs) of multialkali Na$_{2}$KSb(Cs,Sb) photocathodes were measured in the temperature range of 80--295 K. The thresholds of various band-to-band transition in Na$_{2}$KSb were observed in the optical and QE spectra of Na$_{2}$KSb(Cs,Sb) photocathodes. The evolution of EDC derivatives with varying photon energy reveals a fine structure related to the emission of two types of electrons: (i) ballistic electrons, which are excited from heavy hole, light hole and split-off valence bands, and (ii) photoelectrons, that are captured in the side valleys of Na$_{2}$KSb conduction band. The analysis of EDCs and QE spectra allowed us to determine the band structure parameters of Na$_{2}$KSb at $T = 80$ K, including the band gap $E_{\text{g}} = 1.52 \pm 0.02$ eV, spin-orbit splitting $Δ_{\text{SO}} = 0.59 \pm 0.04$ eV and the energy separations between $Γ$ and side valleys of the conduction band: $Δ_{Γ-\text{X}1} = 0.41 \pm 0.05$ eV and $Δ_{Γ-\text{X}2} = 0.65 \pm 0.05$ eV. The experimentally determined band gaps and side valley positions, as well as the energies of the final electronic states of optical transitions are in good agreement with the DFT calculations. The obtained data on the hot electron dynamics and electronic band structure of Na$_{2}$KSb are crucial to improve the understanding of the photoemission processes in this material and will contribute to the development of the robust spin-polarized electron sources with multialkali photocathodes.

cond-mat.mtrl-sci↗

arXiv2026

Revealing the (111) surface electronic structure of epitaxially grown Na$_2$KSb photocathode

A recent study has established the Na$_2$KSb(Cs) photocathode as a highly efficient emitter of spin-polarized electrons. However, the electronic structure of alkali antimonides remains poorly understood. In this work, we report the first crystalline epitaxial growth of Na$_2$KSb films, achieved via chemical vapor deposition (CVD) on a graphene-coated SiC(0001) substrate. The high crystalline quality of these films enabled a direct investigation of the material's electronic structure using angle-resolved photoemission spectroscopy (ARPES). By comparing the experimental results with density functional theory (DFT) calculations, we have identified dispersive surface states originating from different terminations of the Na$_2$KSb(111) surface. Furthermore, we demonstrate that the crystalline order of the film is preserved following its activation via the deposition of Cs and Sb. This finding opens a pathway for investigating the electronic structure of multialkali Na$_2$KSb(Cs) photocathodes and for rationally improving their properties.

cond-mat.mtrl-sci↗

arXiv2025

Subthermal Mean Transverse Energies Induced by Electron Refraction on the Jump in Mass at the Surface of Multialkali Photocathodes

The search for photocathode materials with low mean transverse energies (MTEs) and, hence, low intrinsic emittance is of crucial importance for various fields of particle and solid state physics. Here, we demonstrate that polycrystalline multialkali Na$_{2}$KSb(Cs,Sb) photocathodes with negative effective electron affinity (NEA) have MTE values at room temperature by a factor of 2 lower than those of monocrystalline \textit{p}-GaAs(Cs,O) photocathodes. These low MTE values are due to the electron refraction on the jump in mass, between a small effective mass in Na$_{2}$KSb and free electron mass in vacuum. It is proved that, at the NEA state, up to half of photoelectrons are emitted in a narrow-angle cone with the fractional MTE of 9\,meV at room temperature. We also showed that the transition from NEA to positive effective affinity results in the subthermal total MTE of the Na$_{2}$KSb(Cs,Sb) photocathode, along with quantum efficiency of about 10$^{-2}$. The physical reasons for the manifestation of the refraction effect in multialkali photocathodes are discussed, opening up opportunities for the development of high-brightness and ultracold robust electron sources.

cond-mat.mtrl-sci↗

arXiv2024

Probing the Interaction Between Topological and Rashba-like Surface States in MnBi$_2$Te$_4$ Through Sn Doping

The presence of Rashba-like surface states (RSS) in the electronic structure of topological insulators (TIs) has been a longstanding topic of interest due to their significant impact on electronic and spin structures. In this study, we investigate the interaction between topological and Rashba-like surface states (TSS and RSS) in Mn$_{1-x}$Sn$_x$Bi$_2$Te$_4$ systems using density functional theory (DFT) calculations and high-resolution ARPES. Our findings reveal that increasing Sn concentration shifts RSS downward in energy, enhancing their influence on the electronic structure near the Fermi level. ARPES validates these predictions, capturing the evolution of RSS and their hybridization with TSS. Orbital analysis shows RSS are localized within the first three Te-Bi-Te trilayers, dominated by Bi $p$-orbitals, with evidence of the orbital Rashba effect enhancing spin-momentum locking. At higher Sn concentrations, RSS penetrate deeper into the crystal, driven by Sn $p$-orbital contributions. These results position Mn$_{1-x}$Sn$_x$Bi$_2$Te$_4$ as a tunable platform for tailoring electronic properties in spintronic and quantum technologies.

cond-mat.mtrl-sci↗

arXiv2024

The electronic structure of Mn$_{1-x}$Pb$_x$Bi$_2$Te$_4$: experimental evidence of topological phase transition

This study investigates methods for controlling the physical properties of the intrinsic magnetic topological insulator MnBi$_2$Te$_4$ (MBT) by substituting Mn with Pb in Mn$_{1-x}$Pb$_x$Bi$_2$Te$_4$ (MPBT) solid solutions. This substitution enables tunable magnetic and electronic properties. Using various angle-resolved photoemission spectroscopy (ARPES) techniques, including spin-resolved and circular dichroism (CD) measurements, we analyzed the evolution of the electronic structure across different Pb concentrations, with a focus on topological phase transitions (TPT) near x = 50 %. Key indicators of TPT include the presence or absence of topological surface states (TSS) and bulk band gap closure. The results show a gradual decrease of the bulk band gap in the electronic structure of MPBT up to x = 40 %, where it nearly vanishes, followed by a constant gap value between 40 - 60 %, and its reopening above 80 %, which is accompanied by a transition of the electronic structure of MPBT to a PbBi$_2$Te$_4$-like electronic structure. TSS were observed at x less than 30 % and greater than 80 %, as confirmed by CD and spin-resolved ARPES data, but were absent near x = 55 %, suggesting a distinct topological phase - possibly semi-metallic or a trivial insulator with a narrow gap phase. These findings demonstrate the tunability of the electronic structure of MPBT, making it a promising candidate for topological and spintronic applications.

cond-mat.mtrl-sci↗

arXiv2024

Intrinsic Negative Magnetoresistance in Layered AFM Semimetals: the Case of EuSn$_2$As$_2$

Here, by applying a comprehensive approach including magnetic, transport measurements, ARPES band structure measurements, DFT calculations, and analytical theory consideration, we unveil the puzzling origin of the negative isotropic magnetoresistance in the highly anisotropic semimetals, particularly, Eu$_2$Sn$_2$As$_2$ with AFM ordering of Eu atoms. The isotropic magnetoresistance developing along with the magnetization changes up to the complete spin polarization field was reported previously in several experimental studies, though its theoretical explanation was missing up to date. Recently, we proposed a novel theoretical mechanism to describe the observed magnetoresistance in layered AFM compounds by exchange splitting of the electron energy levels and by confining the electron wave functions with different spin projection in the vicinity of the respective magnetic layer. In this paper, we present more detailed experimental studies of the negative magnetoresistance with several samples of EuSn$_2$As$_2$ in order to identify its sample-independent features including temperature dependence. We also substantiate the proposed theory by comparing it with magnetotransport data, with ARPES measurements of the energy band structure, and DFT energy spectrum calculations.

cond-mat.supr-con↗

arXiv2024

Direct spin imaging detector based on freestanding magnetic nanomembranes with electron optical amplification

An analog of the optical polarizer/analyzer for electrons, a spin filter based on freestanding ferromagnetic (FM) nanomembrane covering the entrance of the microchannel plate (MCP) was applied for efficient spin filtering and electron amplification in the 2D field of view. To study the spin dependent transmission, we constructed a spin-triode device (spintron), which consists of a compact proximity focused vacuum tube with the Na2KSb spin-polarized electron source, the FM-MCP and phosphor screen placed to run parallel to each other. Here, we demonstrate the fabrication of FM nanomembranes consisting of a Co/Pt superlattice deposited on a freestanding 3 nm SiO2 layer with a total thickness of 10 nm. The FM-MCP has 10e6 channels with a single-channel Sherman function S=0.6 and a transmission of 1.5x10e-3 in the low electron energy range. The FM-MCP-based device provides a compact optical method for measuring the spin polarization of free electron beams in the imaging mode and is well suited for photoemission spectroscopy and microscopy methods.

cond-mat.mtrl-sci↗

arXiv2024

Phase transitions, Dirac and WSM states in $\mathrm{Mn}_{1-x} \mathrm{Ge}_x \mathrm{Bi}_2 \mathrm{Te}_4$

Using angle-resolved photoemission spectroscopy (ARPES) and density functional theory (DFT), an experimental and theoretical study of changes in the electronic structure (dispersion dependencies) and corresponding modification of the energy band gap at the Dirac point (DP) for topological insulator (TI) $\mathrm{Mn}_{1-x} \mathrm{Ge}_x \mathrm{Bi}_2 \mathrm{Te}_4$ have been carried out with gradual replacement of magnetic Mn atoms by non-magnetic Ge atoms when concentration of the latter was varied from 10$\%$ to 75$\%$. It was shown that when Ge concentration increases then the bulk band gap decreases and reaches zero plateau in the concentration range of 45$\%$-60$\%$ while non-topological surface states (TSS) are present and exhibit an energy splitting of 100 and 70 meV in different types of measurements. It was also shown that TSS disappear from the measured band dispersions at a Ge concentration of about 40$\%$. DFT calculations of $\mathrm{Mn}_{1-x} \mathrm{Ge}_x \mathrm{Bi}_2 \mathrm{Te}_4$ band structure were carried out to identify the nature of observed band dispersion features and to analyze a possibility of magnetic Weyl semimetal state formation in this system. These calculations were performed for both antiferromagnetic (AFM) and ferromagnetic (FM) ordering types while the spin-orbit coupling (SOC) strength was varied or a strain (compression or tension) along the $c$-axis was applied. Calculations show that two different series of topological phase transitions (TPTs) may be implemented in this system depending on the magnetic ordering. At AFM ordering transition between TI and trivial insulator phase goes through the Dirac semimetal state, whereas for FM phase such route admits three intermediate states instead of one (TI - Dirac semimetal - Weyl semimetal - Dirac semimetal - trivial insulator).

cond-mat.mtrl-sci↗

arXiv2024

Interfacing Quantum Spin Hall and Quantum Anomalous Hall insulators: Bi bilayer on MnBi$_2$Te$_4$-family materials

Meeting of non-trivial topology with magnetism results in novel phases of matter, such as Quantum Anomalous Hall (QAH) or axion insulator phases. Even more exotic states with high and tunable Chern numbers are expected at the contact of intrinsic magnetic topological insulators (IMTIs) and 2D topological insulators (TIs).Here we synthesize a heterostructures composed of 2D TI and 3D IMTIs, specifically of bismuth bilayer on top of MnBi$_2$Te$_4$-family of compounds and study their electronic properties by means of angle-resolved photoelectron spectroscopy (ARPES) and density functional theory (DFT). The epitaxial interface is characterized by hybridized Bi and IMTI electronic states. The Bi bilayer-derived states on different members of MnBi$_2$Te$_4$-family of materials are similar, except in the region of mixing with the topological surface states of the substrate. In that region, the new, substrate dependent interface Dirac state is observed. Our \emph{ab initio} calculations show rich interface phases with emergence of exchange split 1D edge states, making the Bi/IMTI heterostructures promising playground for observation of novel members in the family of quantum Hall effects.

cond-mat.other↗

arXiv2022

New spin-polarized electron source based on alkali-antimonide photocathode

New spin-dependent photoemission properties of alkali antimonide semiconductor cathodes are predicted based on the detected optical spin orientation effect and DFT band structure calculations. Using these results, the Na$_2$KSb/Cs$_3$Sb heterostructure is designed as a spin-polarized electron source in combination with the Al$_{0.11}$Ga$_{0.89}$As target as a spin-detector with spatial resolution. In the Na$_2$KSb/Cs$_3$Sb photocathode, spin-dependent photoemission properties were established through detection of high degree of photoluminescence polarization and high polarization of the photoemitted electrons. It was found that the multi-alkali photocathode can provide electron beams with emittance very close to the limits imposed by the electron thermal energy. The vacuum tablet-type sources of spin-polarized electrons have been proposed for accelerators, that can exclude the construction of the photocathode growth chambers for photoinjectors.

cond-mat.mtrl-sci↗

arXiv2019

Band gap opening at the Dirac point in Co/BiSbTeSe2(0001) system

Sub-angstrom Co coverage, being deposited on BiSbTeSe2(0001) surface at 200-330 C, opens a band gap at the Dirac point, with the shift of the Dirac point position caused by RT adsorbate pre-deposition. Temperature dependent measurements in 15-150 K range have shown no band gap width change. This fact indicates the nonmagnetic nature of the gap which may be attributed to the chemical hybridization of surface states upon the introduction of Co adatoms, which decrease crystallographic symmetry and eliminate topological protection of the surface states.

cond-mat.mtrl-sci↗

arXiv2018

Crystalline structure and XMCD studies of Co40Fe40B20 grown on Bi2Te3, BiTeI and Bi2Se3

Epitaxial films of Co40Fe40B20 (further - CoFeB) were grown on Bi2Te3(001) and Bi2Se3(001) substrates by laser molecular beam epitaxy (LMBE) technique at 200-400C. Bcc-type crystalline structure of CoFeB with (111) plane parallel to (001) plane of Bi2Te3 was observed, in contrast to polycrystalline CoFeB film formed on Bi2Se3(001) at RT using high-temperature seeding layer. Therefore, structurally ordered ferromagnetic thin films were obtained on the topological insulator surface for the first time. Using high energy electron diffraction (RHEED) 3D reciprocal space mapping, epitaxial relations of main crystallographic axes for the CoFeB/ Bi2Te3 heterostructure were revealed. MOKE and AFM measurements showed the isotropic azimuthal in-plane behavior of magnetization vector in CoFeB/ Bi2Te3, in contrast to 2nd order magnetic anisotropy seen in CoFeB/Bi2Se3. XPS measurements showed more stable behavior of CoFeB grown on Bi2Te3 to the oxidation, in compare to CoFeB grown on Bi2Se3. XAS and XMCD measurements of both concerned nanostructures allowed calculation of spin and orbital magnetic moments for Co and Fe. Additionally, crystalline structure and XMCD response of the CoFeB/BiTeI and Co55Fe45/BiTeI systems were studied, epitaxial relations of main crystallographic axes were found, and spin and orbital magnetic moments were calculated.

cond-mat.mtrl-sci↗

arXiv2017

Conductance oscillations and zero-bias anomaly in a single superconducting junction to a three-dimensional $Bi_2Te_3$ topological insulator

We experimentally investigate Andreev transport through a single junction between an s-wave indium superconductor and a thick film of a three-dimensional $Bi_2Te_3$ topological insulator. We study $Bi_2Te_3$ samples with different bulk and surface characteristics, where the presence of a topological surface state is confirmed by direct ARPES measurements. All the junctions demonstrate Andreev transport within the superconducting gap. For junctions with transparent $In-Bi_2Te_3$ interfaces we find a number of nearly periodic conductance oscillations, which are accompanied by zero-bias conductance anomaly. Both effects disappear above the superconducting transition or for resistive junctions. We propose a consistent interpretation of both effects as originating from proximity-induced superconducting correlations within the $Bi_2Te_3$ topological surface state.

cond-mat.mes-hall↗

arXiv2015

Experimental realization of a topological p-n junction by intrinsic defect-grading

A junction between an n- and p-type semiconductor results in the creation of a depletion region whose properties are at the basis of nowadays electronics. If realized using topological insulators as constituent materials, p-n junctions are expected to manifest several unconventional effects with great potential for applications. Experimentally, all these fascinating properties remained unexplored so far, mainly because prototypical topological PNJs, which can be easily realized and investigated, were not readily available. Here, we report on the creation of topological PNJs which can be as narrow as few tenths of nm showing a built-in potential of 110meV. These junctions are intrinsically obtained by a thermodynamic control of the defects distribution across the crystal. Our results make Bi2Te3 a robust and reliable platform to explore the physics of topological p-n junction.

cond-mat.mes-hall↗