arXiv subjects

V. Antonov

Publications and source records attributed to V. Antonov.

6 recordsLinked to original sources

arXiv2024

In-situ scanning gate imaging of individual two-level material defects in live superconducting quantum circuits

The low temperature physics of structurally amorphous materials is governed by two-level system defects (TLS), the exact origin and nature of which remain elusive despite decades of study. Recent advances towards realising stable high-coherence platforms for quantum computing has increased the importance of studying TLS in solid-state quantum circuits, as they are a persistent source of decoherence and instability. Here we perform scanning gate microscopy on a live superconducting quantum circuit at millikelvin temperatures to locate individual TLS. Our method directly reveals the microscopic nature of TLS and is also capable of deducing the three dimensional orientation of individual TLS electric dipole moments. Such insights, when combined with structural information of the underlying materials, can help unravel the detailed microscopic nature and chemical origin of TLS, directing strategies for their eventual mitigation.

cond-mat.mtrl-sci↗

arXiv2023

Reflection-enhanced gain in traveling-wave parametric amplifiers

The operating principle of traveling-wave parametric amplifiers is typically understood in terms of the standard coupled mode theory, which describes the evolution of forward propagating waves without any reflections, i.e. for perfect impedance matching. However, in practice, superconducting microwave amplifiers are unmatched nonlinear finite-length devices, where the reflecting waves undergo complex parametric processes, not described by the standard coupled mode theory. Here, we present an analytical solution for the TWPA gain, which includes the interaction of reflected waves. These reflections result in corrections to the well-known results of the standard coupled mode theory, which are obtained for both 3-wave and 4-wave mixing processes. Due to these reflections, gain is enhanced and unwanted nonlinear phase modulations are suppressed. Predictions of the model are experimentally demonstrated on two types of unmatched TWPA, based on coplanar waveguides with a central wire consisting of i) a high kinetic inductance superconductor, and ii) an array of 2000 Josephson junctions.

cond-mat.mtrl-sci↗

arXiv2017

Thickness-dependent electronic and magnetic properties of $γ'$-Fe$_{\mathrm 4}$N atomic layers on Cu(001)

Growth, electronic and magnetic properties of $γ'$-Fe$_{4}$N atomic layers on Cu(001) are studied by scanning tunneling microscopy/spectroscopy and x-ray absorption spectroscopy/magnetic circular dichroism. A continuous film of ordered trilayer $γ'$-Fe$_{4}$N is obtained by Fe deposition under N$_{2}$ atmosphere onto monolayer Fe$_{2}$N/Cu(001), while the repetition of a bombardment with 0.5 keV N$^{+}$ ions during growth cycles results in imperfect bilayer $γ'$-Fe$_{4}$N. The increase in the sample thickness causes the change of the surface electronic structure, as well as the enhancement in the spin magnetic moment of Fe atoms reaching $\sim$ 1.4 $μ_{\mathrm B}$/atom in the trilayer sample. The observed thickness-dependent properties of the system are well interpreted by layer-resolved density of states calculated using first principles, which demonstrates the strongly layer-dependent electronic states within each surface, subsurface, and interfacial plane of the $γ'$-Fe$_{4}$N atomic layers on Cu(001).

cond-mat.mtrl-sci↗

arXiv2015

Disorder induced Dirac-point physics in epitaxial graphene from temperature-dependent magneto-transport measurements

We report a study of disorder effects on epitaxial graphene in the vicinity of the Dirac point by magneto-transport. Hall effect measurements show that the carrier density increases quadratically with temperature, in good agreement with theoretical predictions which take into account intrinsic thermal excitation combined with electron-hole puddles induced by charged impurities. We deduce disorder strengths in the range 10.2 $\sim$ 31.2 meV, depending on the sample treatment. We investigate the scattering mechanisms and estimate the impurity density to be $3.0 \sim 9.1 \times 10^{10}$ cm$^{-2}$ for our samples. An asymmetry in the electron/hole scattering is observed and is consistent with theoretical calculations for graphene on SiC substrates. We also show that the minimum conductivity increases with increasing disorder potential, in good agreement with quantum-mechanical numerical calculations.

cond-mat.mes-hall↗

arXiv2013

Evidence for interacting two-level systems from the 1/f noise of a superconducting resonator

Here we find the increase in 1/f noise of superconducting resonators at low temperatures to be completely incompatible with the standard tunneling model (STM) of Two Level Systems (TLS), which has been used to describe low-frequency noise for over three decades. We revise the STM to include a significant TLS - TLS interaction. The new model is able to explain the temperature and power dependence of noise in our measurements, as well as recent studies of individual TLS lifetimes using superconducting qubits. The measurements were made possible by implementing an ultra-stable frequency-tracking technique used in atomic clocks and by producing a superconducting resonator insensitive to temperature fluctuations. The latter required an epitaxially grown Nb film with a Pt capping layer to minimize detrimental oxides at all interfaces.

cond-mat.mes-hall↗

arXiv2004

Counting Individual Electrons on Liquid Helium

We show that small numbers of electrons, including a single electron, can be held in a novel electrostatic trap above the surface of superfluid helium. A potential well is created using microfabricated electrodes in a 5 micron diameter pool of helium. Electrons are injected into the trap from an electron reservoir on a helium microchannel. They are individually detected using a superconducting single-electron transistor (SET) as an electrometer. A Coulomb staircase is observed as electrons leave the trap one-by-one until the trap is empty. A design for a scalable quantum information processor using arrays of electron traps is presented

cond-mat.other↗