arXiv subjects

V. Apinyan

Publications and source records attributed to V. Apinyan.

At least 19 recordsLinked to original sources

arXiv2025

Coexistence of superconductivity and excitonic pairing in a doped-biased double-layer system

The subject of the present study is the double-layer square-lattice system with the intralayer phonon modulations. We investigate the superconducting and excitonic pairings, as well as their coexistence, as functions of various physical parameters in the system. These parameters include temperature, intralayer and interlayer Coulomb interactions, the electron-phonon coupling parameter, doping and the applied electric field. The existence of superconductivity is demonstrated by considering the influence of intralayer phonons on the total charge density leading to the modification of the total energy of the electrons. Our results provides insights into the long-standing problem of the mechanism of superconductivity in high-$T_c$ cuprate superconductors.

cond-mat.str-el↗

arXiv2025

Applied electric and magnetic field effects on the bandgap formation and antiferromagnetic ordering in AA-stacked Bilayer Graphene

In this study, we consider a two-layer graphene structure stacked in the AA form and exposed to the influence of two different electric fields applied to different layers. The graphene layers are also subjected to an external magnetic field perpendicular to the planes of the layers. We investigate the possible effects of the applied in-plane fields and the magnetic field on excitonic pairing, antiferromagnetic order, and the chemical potential. Simultaneously, we analyze the effects of the interlayer Coulomb interaction potential on the physical properties of the considered system. We demonstrate that the application of planar electric fields leads to the formation of an unusually large bandgap in the electronic band structure, which is not typical for AA-stacked bilayer graphene. We discuss various values of the applied electric field potentials and show their influence on the electronic band structure of the system. Additionally, we identify the existence of a critical value of the magnetic field above which Wigner crystallization-like effect is present for the electrons, also affecting the excitonic gap in one spin channel. The results obtained in this study could be important for applications of AA-stacked bilayer graphene as a large band-gap material.

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arXiv2025

Excitonic correlations in the system of gated metallic wires with the applied Zeeman magnetic field

We have studied the electron-electron interactions in the system composed of two metallic wires, placed in the external magnetic and electric fields. The interactions between the electrons in the wires have been taken into account within the usual Hubbard model. We have considered both half-filling and partial-filling limits for the occupation of the atomic lattice sites. We show the existence of the excitonic pairing in this low-dimensional system and calculate the excitonic order parameter in different electron-electron interaction regime, magnetic field and temperature. We demonstrate that the usual Hubbard-$U$ interaction leads to strong electron localization which enhance the local antiferromagnetic order in the system.

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arXiv2025

Canted antiferromagnetism and excitonic order in gated double-layer graphene

We study the effects of the electron-electron interactions on the excitonic properties and charge-density modulations in the AB stacked double-layer (DL) graphene, placed in the external gate-potential $V$. The coexistence of the canted antiferromagnetic order and excitonic pairing gap has been studied with the help of the generalized Hubbard model. We calculate the chemical potential $\mu$, the average charge density difference between the layers $\delta{\bar{n}}$, the antiferromagnetic gap-function $\Delta_{\rm AFM}$ and the excitonic order parameters $\Delta_{\sigma}$ in the zero temperature limit. We found that the excitonic pairing order parameter has a larger energy scale than the canted antiferromagnetic gap-function. The charge neutrality, in the DL graphene system, occurs only in the absence of the external gate-potential $V$. Moreover, we have shown that the values of the antiferromagnetic gap-function $\Delta_{\rm AFM}$ and excitonic order parameter $\Delta_{\sigma}$ are always increasing at the large values of inter-layer Coulomb interaction, while they are decreasing for large values of the applied gate-potential $V$.

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arXiv2025

Unusual spin-triplet superconductivity in monolayer graphene

In this paper we consider the phonons in monolayer graphene and we show the possibility for the spin-triplet superconducting excitations states by discretizing the single-particle excitations near Fermi wave vector. The molonayer graphene was supposed to be exposed under the influence of the external gate-potential and the local Coulomb interaction effects have been taken into account at each lattice site position in the monolayer. A sufficiently large temperature domain was found, where the superconducting order parameter is not vanishing. Corresponding to this, at the surprisingly high temperature limit, we obtain a narrow domain of the electron-phonon coupling parameter $\lambda_{\rm eff}$, emphasizing the superconducting state. We discuss the localizing role of Hubbard-$U$ interaction and the effects external gate potential on the calculated physical parameters in the system. We explain the importance of the chemical potential in the formation of the superconducting state. We show the existence of a large superconducting band-gap in the system even in the case of the absence of the applied electric field potential.

cond-mat.str-el↗

arXiv2022

Excitonic condensation and metal-semiconductor transition in AA bilayer graphene in the external magnetic field

In this paper, the effects of the external transverse magnetic field $B$ (perpendicular to the surface of the layers) on the electronic and excitonic properties are studied in the AA-stacked bilayer graphene (BLG). The effects of the Coulomb interactions and excitonic pairing have been taken into account and analyzed in detail within the bilayer Hubbard model. Both half-filling and partial filling regimes have been taken into account and the magnetic field dependence of a series of physical parameters was found. It is shown that the difference between the average electron concentrations in the layers vanishes at some critical value of magnetic field $B_{c}$ and the chemical potential is calculated numerically above and below that value. The role of the Coulomb interactions on the average carrier concentrations in the layers has been analyzed, and the excitonic order parameters have been calculated for different spin orientations. We found a possibility for the particle population inversion between the layers when varying the external magnetic field. The calculated electronic band structure in the AA-BLG shows the presence of metal-semiconductor transition, governed by the strength of the applied magnetic field or the interlayer interaction potential. We show that for high magnetic fields the band-gap is approaching the typical values of the gaps in the usual semiconductors. It is demonstrated that, at some parameter regimes, the AA-BLG behaves like a spin-valve device, by permitting the electron transport with only one spin direction. All calculations have been performed at the zero-temperature limit.

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arXiv2022

Excitonic Tunneling in the AB-bilayer Graphene Josephson Junctions

We have considered the AB-stacked bilayer graphene Josephson junction. The bilayers are supposed to be in the charge equilibrium states and at the half-filling in each of the electronic layers of the construction and at each value of the external gate. By considering the interacting bilayers in both sides of the junction and by taking into account both intralayer and interlayer Coulomb interaction effects, we have calculated the normal and excitonic tunnel currents through the junction. The electronic band renormalizations have been taken into account, due to the excitonic pairing effects and condensation in the BLGs. The exact four-band energy dispersions, including the excitonic renormalizations, have been used for the bilayers without any low-energy approximation. We show the degeneracy of the ground state at the zero applied voltage and for different phases of the coherent condensates by showing a dc Josephson current through the junction. The normal and excitonic tunneling currents have been calculated for different gate voltages and for different values of the interaction parameters. The role of the charge neutrality point has been discussed in details.

cond-mat.mes-hall↗

arXiv2022

Excitonic effects in twisted bilayer graphene

In the present work, we consider the excitonic effects in the twisted bilayer graphene (tBLG) within the rotated bilayer Hubbard model. Both, intralayer and interlayer Coulomb interactions have been considered and the half-filling condition is imposed for the electronic densities is both layers of the bilayer. We calculate the excitonic pairing gap parameter and the chemical potential for different twist angles and different values of the interlayer Coulomb interaction parameter. Furthermore, we show the appearance of the electronic flat bands in the electronic band structure, mediated by the excitonic effects. We show that there is a doubling effect of the Dirac's $K$-point at the low interaction limit and one of Dirac's nodes is stable and the other one changes its position as a function of rotation angle. At the large twist angle limit, there appear two additional Dirac-like nodes at the $M$-point in the Brillouin zone. We show the excitonic red-shift effect of the principal Dirac's point $K$, in the low interaction limit, while, at the strong interactions, we get also the blue-shift effect at the $M$-point. Apart from the mentioned effects, the theory evaluated here predicts a metal-semiconductor transition in the tBLG system when augmenting the interlayer Coulomb interaction parameter.

cond-mat.mes-hall↗

arXiv2021

High thermoelectric performance in excitonic bilayer graphene

We consider the excitonic effects on the thermal properties in the AB-stacked bilayer graphene. The calculations are based on the bilayer generalization of the usual Hubbard model at the half-filling. The full interaction bandwidth is used without any low-energy assumption. We obtain the unusually high values for the electronic figure of merit even at the room-temperatures which is very promising for the thermoelectric applications of the AB-bilayer structure. We discuss the effects of the interlayer Coulomb interaction and temperature on different thermal parameters in the bilayer graphene and we emphasize the role of the charge neutrality point in the thermal properties and within the excitonic insulator transition scenario. The calculated values of the rate of thermoelectric conversion efficiency suggest the possibility of high-performance device applications of AB-bilayer graphene.

cond-mat.mes-hall↗

arXiv2021

Antiferromagnetic ordering and excitonic pairing in the AA-stacked bilayer graphene

In the present paper, we describe the antiferromagnetic and excitonic correlations in the AA-stacked bilayer graphene. We consider the applied external electric field potential to the structure which leads to the electronic charge imbalance between the layers in the system. By using the generalized two-layer Hubbard Hamiltonian, we consider different particle filling regimes in the layers. We calculate the important energy scales in the system and we establish the conditions for the appearance of the antiferromagnetic order in the system. We consider both large and small Coulomb interaction limits in the layers and the effect of the electric field potential on the calculated order parameters. We discuss the coexistence of antiferromagnetism and excitonic phases and we show that they can coexist only in the regime away from half-filling. In the case away from the half-filling, we show the existence of a critical value $U_{\rm C}$ of the Coulomb interaction potential at which we establish the transition from the single-valued to the triple valued excitonic states, governed by the strong electronic reconfiguration, in the system. The zero-temperature limit is considered in the problem.

cond-mat.str-el↗

arXiv2021

Ultraviolet absorption spectrum of the half-filled bilayer graphene

We consider the optical properties of the half-filled AB-stacked bilayer graphene with the excitonic pairing and condensation between the layers. Both intra and interlayer local Coulomb interaction effects have been taken into account and the role of the exact Fermi energy has been discussed in details. We have calculated the absorption coefficient, refractive index, dielectric response functions and the electron energy loss spectrum for different interlayer Coulomb interaction regimes and for different temperatures. Considering the full four-band model for the interacting AB bilayer graphene, a good agreement is achieved with other theoretical and experimental works on the subject, in particular, limiting cases of the theory. The calculations, presented here, permit to estimate accurately the effects of excitonic pairing and condensation on the optical properties of the bilayer graphene. The modifications of the plasmon excitation spectrum are discussed in details for a very large interval of the interlayer interaction parameter.

cond-mat.mes-hall↗

arXiv2018

Dirac's spectrum from Newton laws in graphene

In the present work, we give a phenomenological theory of the monolayer graphene where two worlds quantum and classical meet together and complete each other in the most natural way. It appears that the graphene is the unique material where this complementarity could be explained in an effective way due to its exceptional band structure properties. We introduce the electron mass-vortex representation and we define surface tension excitation states in the monolayer graphene. By abstracting from the usual band energy dispersion we calculate the band mass of the electrons at the Dirac point by introducing the mathematical mass-dispersion relation. As a result, we obtain the Dirac energy dispersion in monolayer graphene from the classical Newton law. Within the semiclassical theory, we show the presence of the surface spin tension vectorial field which, possibly, closely relates the surface tension and spin tension states on the helical surface. We calculate the surface tension related with the electron band mass-vortex formation at the Dirac's point and we predict accurately the surface tension value related to the excitonic binding at the Dirac point as being formed from the electron and hole band mass-vortices. Moreover, we give the solution to a long-standing problem in the spin group theory and we construct an example which shows, phenomenologically, that the manifolds on $\rm S^{(6)}$ are not integrable. The principal reason for this is attributed to the irreducibility of the spinorial group $\rm Spin(6)^{\rm R}$ at the Dirac's point, due to the band mass formation via gravitational field.

cond-mat.mes-hall↗

arXiv2018

High energy shift in the optical conductivity spectrum of the bilayer graphene

We calculate theoretically the optical conductivity in the bilayer graphene by considering Kubo-Green-Matsubara formalism. Different regimes of the interlayer coupling parameter have been considered in the paper. We show that the excitonic effects substantially affect the optical conductivity spectrum at the high-frequency regime when considering the full interaction bandwidth, leading to a total suppression of the usual Drude intraband optical transition channels and by creating a new type of optical gap. We discuss the role of the interlayer coupling parameter and the Fermi level on the conductivity spectrum, going far beyond the usual tight-binding approximation scheme for the extrinsic bilayer graphene.

cond-mat.str-el↗

arXiv2017

Spectral properties of excitons in the bilayer graphene

In this paper, we consider the spectral properties of the bilayer graphene with the local excitonic pairing interaction between the electrons and holes. We consider the generalized Hubbard model, which includes both intralayer and interlayer Coulomb interaction parameters. The solution of the excitonic gap parameter is used to calculate the electronic band structure, single-particle spectral functions, the hybridization gap, and the excitonic coherence length in the bilayer graphene. We show that the local interlayer Coulomb interaction is responsible for the semimetal-semiconductor transition in the double layer system, and we calculate the hybridization gap in the band structure above the critical interaction value. The formation of the excitonic band gap is reported as the threshold process and the momentum distribution functions have been calculated numerically. We show that in the weak coupling limit the system is governed by the Bardeen-Cooper-Schrieffer (BCS)-like pairing state. Contrary, in the strong coupling limit the excitonic condensate states appear in the semiconducting phase, by forming the Dirac's pockets in the reciprocal space.

cond-mat.mes-hall↗

arXiv2017

Density of states in the bilayer graphene with the excitonic pairing interaction

In the present paper, we consider the excitonic effects on the single particle normal density of states (DOS) in the bilayer graphene (BLG). The local interlayer Coulomb interaction is considered between the particles on the non-equivalent sublattice sites in different layers of the BLG. We show the presence of the excitonic shift of the neutrality point, even for the noninteracting layers. Furthermore, for the interacting layers, a very large asymmetry in the DOS structure is shown between the particle and hole channels. At the large values of the interlayer hopping amplitude, a large number of DOS at the Dirac's point indicates the existence of the strong excitonic coherence effects between the layers in the BLG and the enhancement of the excitonic condensation. We have found different competing orders in the interacting BLG. Particularly, a phase transition from the hybridized excitonic insulator phase to the coherent condensate state is shown at the small values of the local interlayer Coulomb interaction.

cond-mat.str-el↗

arXiv2016

Excitonic gap formation and condensation in the bilayer graphene structure

We have studied the excitonic gap formation in the Bernal Stacked, bilayer graphene (BLG) structures at half-filling. Considering the local Coulomb interaction between the layers, we calculate the excitonic gap parameter and we discuss the role of the interlayer and intralayer Coulomb interactions and the interlayer hopping on the excitonic pair formation in the BLG. Particularly, we predict the origin of excitonic gap formation and condensation, in relation to the farthermost interband optical transition spectrum. The general diagram of excitonic phase transition is given, explaining different interlayer correlation regimes. The temperature dependence of the excitonic gap parameter is shown and the role of the chemical potential, in the BLG, is discussed in details.

cond-mat.mes-hall↗

arXiv2016

Two band model for coherent excitonic condensates

We consider the excitonic correlations in the two band solid state system composed of the valence band and conduction band electrons. We treat the phase coherence mechanism in the system by presenting the electron operator as a fermion attached to the U(1) phase-flux tube. The emergent bosonic gauge field, related to the phase variables appears to be crucial for the coherent Bose-Einstein condensation (BEC) of excitons. We calculate the normal excitonic Green functions, and the single-particle density of states functions being a convolution between bosonic and fermionic counterparts. We obtain the total density of states (DOS) as a sum of two independent parts. For the coherent normal fermionic DOS, there is no hybridization-gap found in the system due to strong coherence effets and phase stiffness.

cond-mat.str-el↗

arXiv2015

Density of states and excitonic condensation in the double layer correlated systems

We consider the single-particle density of states (DOS) in the strongly correlated double layer (DL) system, without applied external fields. We demonstrate an unusual collapse effect in the spectrum of the normal single-particle spectral function at the particular high-symmetry point corresponding to the specific bunching-point solution of the chemical potential in the Frenkel channel. We show that at the low-temperature limit the anomalous spectral function obeys a concave like structure, which is directly related to the interlayer pair formation and condensation. We calculate the normal DOS functions, and we find their temperature dependence for different values of the interlayer Coulomb interaction parameter. We show that the normal electron and hole DOS functions demonstrate typical condensates double peak structures on the background of the excitonic pair formation quasiparticle spectra and we have found the evidence of the hybridization gap in the case of high-temperature limit, and small interlayer coupling parameter. Meanwhile, we show a possible crossover from the excitonic condensate regime into the band insulator state. The structure of the normal DOS spectra, in the Frenkel channel and for the strong interlayer coupling regime is found gapless for all temperature limits, which clearly indicates the strong coherence effects in the DL structure, and the excitonic condensates therein. We have shown that the excitonic pair formation and pair condensation occurs simultaneously in the DL system, in contrast with the purely three-dimensional (3D) or two-dimensional cases (2D), discussed previously.

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