arXiv subjects

V. Bouchiat

Publications and source records attributed to V. Bouchiat.

At least 19 recordsLinked to original sources

arXiv2021

Detection of graphene's divergent orbital diamagnetism at the Dirac point

The electronic properties of graphene have been intensively investigated over the last decade, and signatures of the remarkable features of its linear Dirac spectrum have been displayed using transport and spectroscopy experiments. In contrast, the orbital magnetism of graphene, which is one of the most fundamental signature of the characteristic Berry phase of graphene's electronic wave functions, has not yet been measured in a single flake. In particular, the striking prediction of a divergent diamagnetic response at zero doping calls for an experimental test. Using a highly sensitive Giant Magnetoresistance sensor (GMR) we have measured the gate voltage-dependent magnetization of a single graphene monolayer encapsulated between boron nitride crystals. The signal exhibits a diamagnetic peak at the Dirac point whose magnetic field and temperature dependences agree with theoretical predictions starting from the work of Mc Clure \cite{McClure1956}. Our measurements open a new field of investigation of orbital currents in graphene and 2D topological materials, offering a new means to monitor Berry phase singularities and explore correlated states generated by combined effects of Coulomb interactions, strain or moiré potentials.

cond-mat.mes-hall↗

arXiv2019

Magneto-spectroscopy of exciton Rydberg states in a CVD grown WSe2 monolayer

The results of magneto-optical spectroscopy investigations of excitons in a CVD grown monolayer of WSe2 encapsulated in hexagonal boron nitride are presented. The emission linewidth for the 1s state is of 4:7 meV, close to the narrowest emissions observed in monolayers exfoliated from bulk material. The 2s excitonic state is also observed at higher energies in the photoluminescence spectrum. Magneto-optical spectroscopy allows for the determination of the g-factors and of the spatial extent of the excitonic wave functions associated with these emissions. Our work establishes CVD grown monolayers of transition metal dichalcogenides as a mature technology for optoelectronic applications.

cond-mat.mes-hall↗

arXiv2019

Interlayer Charge Transfer and Defect Creation in Type I van der Waals Heterostructures

Van der Waals heterostructures give access to a wide variety of new phenomena that emerge thanks to the combination of properties brought in by the constituent layered materials. We show here that owing to an enhanced interaction cross section with electrons in a type I van der Waals heterostructure, made of single layer molybdenum disulphide and thin boron nitride films, electrons and holes created in boron nitride can be transferred to the dichalcogenide where they form electron-hole pairs yielding luminescence. This cathodoluminescence can be mapped with a spatial resolution far exceeding what can be achieved in a typical photoluminescence experiment, and is highly valuable to understand the optoelectronic properties at the nanometer scale. We find that in heterostructures prepared following the mainstream dry transfer technique, cathodoluminescence is locally extinguished, and we show that this extinction is associated with the formation of defects, that are detected in Raman spectroscopy and photoluminescence. We establish that to avoid defect formation induced by low-energy electron beams and to ensure efficient transfer of electrons and holes at the interface between the layers, flat and uniform interlayer interfaces are needed, that are free of trapped species, airborne ones or contaminants associated with sample preparation. We show that heterostructure fabrication using a pick-up technique leads to superior, intimate interlayer contacts associated with significantly more homogeneous cathodoluminescence.

cond-mat.mes-hall↗

arXiv2016

Effect of aging-induced disorder on the quantum transport properties of atomically thin WTe$_{2}$

Atomically thin layers of transition-metal dicalcogenides (TMDCs) are often known to be metastable in the ambient atmosphere. Understanding the mechanism of degradation is essential for their future applications in nanoelectronics, and thus has attracted intensive interest recently. Here, we demonstrate a systematic study of atomically thin WTe$_{2}$ in its low temperature quantum electronic transport properties. Strikingly, while the temperature dependence of few layered WTe$_{2}$ showed clear metallic tendency in the fresh state, degraded devices first exhibited a re-entrant insulating behavior, and finally entered a fully insulating state. Correspondingly, a crossover from parabolic to linear magnetoresistance, and finally to weak anti-localization was seen. Real-time Raman scattering measurement, together with transmission electron microscopy studies done before and after air degradation of atomically thin WTe$_{2}$ further confirmed that the material gradually form amorphous islands. It thus leads to localized electronic states and explains the low temperature Coulomb gap observed in transport measurements. Our study reveals for the first time the correlation between the unusual magnetotransport and disorder in few-layered WTe$_{2}$, which is indispensable in providing guidance on its future devices application.

cond-mat.mes-hall↗

arXiv2016

Nanofaceting as a stamp for periodic graphene charge carrier modulations

The exceptional electronic properties of monoatomic thin graphene sheets triggered numerous original transport concepts, pushing quantum physics into the realm of device technology for electronics, optoelectronics and thermoelectrics. At the conceptual pivot point is the particular twodimensional massless Dirac fermion character of graphene charge carriers and its volitional modification by intrinsic or extrinsic means. Here, interfaces between different electronic and structural graphene modifications promise exciting physics and functionality, in particular when fabricated with atomic precision. In this study we show that quasiperiodic modulations of doping levels can be imprinted down to the nanoscale in monolayer graphene sheets. Vicinal copper surfaces allow to alternate graphene carrier densities by several 10^13 carriers per cm^2 along a specific copper high-symmetry direction. The process is triggered by a self-assembled copper faceting process during high-temperature graphene chemical vapor deposition, which defines interfaces between different graphene doping levels at the atomic level.

cond-mat.mtrl-sci↗

arXiv2014

Interplay between Raman shift and thermal expansion in graphene: temperature-dependent measurements and analysis of substrate corrections

Measurements and calculations have shown significant disagreement regarding the sign and variations of the thermal expansion coefficient (TEC) of graphene $α(T)$. Here we report dedicated Raman scattering experiments conducted for graphene monolayers deposited on silicon nitride substrates and over the broad temperature range 150--900~K. The relation between those measurements for the G band and the graphene TEC, which involves correcting the measured signal for the mismatch contribution of the substrate, is analyzed based on various theoretical candidates for $α(T)$. Contrary to calculations in the quasiharmonic approximation, a many-body potential reparametrized for graphene correctly reproduces experimental data. These results indicate that the TEC is more likely to be positive above room temperature.

cond-mat.mes-hall↗

arXiv2014

Anomalous dissipation mechanism and Hall quantization limit in polycrystalline graphene grown by chemical vapor deposition

We report on the observation of strong backscattering of charge carriers in the quantum Hall regime of polycrystalline graphene grown by chemical vapor deposition, which alters the accuracy of the Hall resistance quantization. The temperature and magnetic field dependence of the longitudinal conductivity exhibits unexpectedly smooth power law behaviors, which are incompatible with a description in terms of variable range hopping or thermal activation, but rather suggest the existence of extended or poorly localized states at energies between Landau levels. Such states could be caused by the high density of line defects (grain boundaries and wrinkles) that cross the Hall bars, as revealed by structural characterizations. Numerical calculations confirm that quasi-one-dimensional extended non-chiral states can form along such line defects and short-circuit the Hall bar chiral edge states.

cond-mat.mes-hall↗

arXiv2014

Electrical switch to the resonant magneto-phonon effect in graphene

We report a comprehensive study of the tuning with electric fields of the resonant magneto-exciton optical phonon coupling in gated graphene. For magnetic fields around $B \sim 25$ T which correspond to the range of the fundamental magneto-phonon resonance, the electron-phonon coupling can be switched on and off by tuning the position of the Fermi level in order to Pauli block the two fundamental inter Landau level excitations. The effects of such a profound change in the electronic excitation spectrum are traced through investigations of the optical phonon response in polarization resolved magneto-Raman scattering experiments. We report on the observation of a splitting of the phonon feature with satellite peaks developing, at particular values of the Landau level filling factor, on the low or on the high energy side of the phonon, depending on the relative energy of the discrete electronic excitation and of the optical phonon. Shifts of the phonon energy as large as $\pm60$ cm$^{-1}$ are observed close to the resonance. The intraband electronic excitation, the cyclotron resonance, is shown to play a relevant role in the observed spectral evolution of the phonon response.

cond-mat.mes-hall↗

arXiv2010

Hybrid superconductor-semiconductor devices made from self-assembled SiGe nanocrystals on silicon

The epitaxial growth of germanium on silicon leads to the self-assembly of SiGe nanocrystals via a process that allows the size, composition and position of the nanocrystals to be controlled. This level of control, combined with an inherent compatibility with silicon technology, could prove useful in nanoelectronic applications. Here we report the confinement of holes in quantum-dot devices made by directly contacting individual SiGe nanocrystals with aluminium electrodes, and the production of hybrid superconductorsemiconductor devices, such as resonant supercurrent transistors, when the dot is strongly coupled to the electrodes. Charge transport measurements on weakly coupled quantum dots reveal discrete energy spectra, with the confined hole states displaying anisotropic gyromagnetic factors and strong spin-orbit coupling strength with pronounced gate-voltage and magnetic-field dependence.

cond-mat.mes-hall↗

arXiv2009

Tunable Superconducting Phase Transition in Metal-Decorated Graphene Sheets

Using typical experimental techniques it is difficult to separate the effects of carrier density and disorder on the superconducting transition in two dimensions. Using a simple fabrication procedure based on metal layer dewetting, we have produced graphene sheets decorated with a non-percolating network of nanoscale tin clusters. These metal clusters both efficiently dope the graphene substrate and induce long-range superconducting correlations. This allows us to study the superconducting transition at fixed disorder and variable carrier concentration. We find that despite structural inhomogeneity on mesoscopic length scales (10-100 nm), this material behaves electronically as a homogenous dirty superconductor. Our simple self-assembly method establishes graphene as an ideal tunable substrate for studying induced two-dimensional electronic systems at fixed disorder and our technique can readily be extended to other order parameters such as magnetism.

cond-mat.mes-hall↗

arXiv2009

Superconductivity in a single C60 transistor

Single molecule transistors (SMTs) are currently attracting enormous attention as possible quantum information processing devices. An intrinsic limitation to the prospects of these however is associated to the presence of a small number of quantized conductance channels, each channel having a high access resistance of at best $R_{K}/2=h/2e^{2}$=12.9 k$Ω$. When the contacting leads become superconducting, these correlations can extend throughout the whole system by the proximity effect. This not only lifts the resistive limitation of normal state contacts, but further paves a new way to probe electron transport through a single molecule. In this work, we demonstrate the realization of superconducting SMTs involving a single C60 fullerene molecule. The last few years have seen gate-controlled Josephson supercurrents induced in the family of low dimensional carbon structures such as flakes of two-dimensional graphene and portions of one-dimensional carbon nanotubes. The present study involving a full zero-dimensionnal fullerene completes the picture.

cond-mat.mes-hall↗

arXiv2008

Kondo effects in a C_60 single-molecule transistor

We have used the electromigration technique to fabricate a $\rm{C_{60}}$ single-molecule transistor (SMT). We present a full experimental study as a function of temperature, down to 35 mK, and as a function of magnetic field up to 8 T in a SMT with odd number of electrons, where the usual spin-1/2 Kondo effect occurs, with good agreement with theory. In the case of even number of electrons, a low temperature magneto-transport study is provided, which demonstrates a Zeeman splitting of the zero-bias anomaly at energies well below the Kondo scale.

cond-mat.mes-hall↗

arXiv2007

Gate-tuned high frequency response of carbon nanotube Josephson junctions

Carbon nanotube (CNT) Josephson junctions in the open quantum dot limit exhibit superconducting switching currents which can be controlled with a gate electrode. Shapiro voltage steps can be observed under radiofrequency current excitations, with a damping of the phase dynamics that strongly depends on the gate voltage. These measurements are described by a standard RCSJ model showing that the switching currents from the superconducting to the normal state are close to the critical current of the junction. The effective dynamical capacitance of the nanotube junction is found to be strongly gate-dependent, suggesting a diffusive contact of the nanotube.

cond-mat.mes-hall↗

arXiv2006

Tuning the Kondo effect with back and side gates - Application to carbon nanotube superconducting quantum interference devices and pi-junctions

We recently presented the first superconducting quantum interference device (SQUID) with single-walled carbon nanotube (CNT) Josephson junctions [1: J. P. Cleuziou, W. Wernsdorfer, V. Bouchiat, T. Ondarcuhu and M. Monthioux, Nature Nanotech. 1, 53, (2006).], http://www.nature.com/nnano/journal/v1/n1/pdf/nnano.2006.54.pdf . We showed that quantum confinement in each junction induces a discrete quantum dot (QD) energy level structure, which can be controlled with two lateral electrostatic gates. In addition, a backgate electrode can vary the transparency of the QD barriers, thus permitting to change the hybridization of the QD states with the superconducting contacts. This technique is further illustrated in this additional supporting material where we show that the Kondo coupling for a given resonance can be continuously tuned by varying the backgate voltage. It allowed us to show [1] that CNT Josephson junctions can be used as gate-controlled pi-junctions, that is, the sign of the current-phase relation across the CNT junctions can be tuned with a gate voltage.

cond-mat.mes-hall↗

arXiv2006

Self-assembly of carbon-nanotube-based single electron memories

We demonstrate wafer-scale integration of single electron memories based on carbon nanotube field effect transistors (cnfets) by a complete self assembly process. First, a dry self assembly based on a Hot Filament assisted Chemical Vapor Deposition technique allows both localized growth and in situ electrical connection of carbon nanotubes on predefined catalytic electrodes. The semiconducting carbon nanotubes integration yield can exceed 50% for a batch. Secondly, a wet self-assembly attaches single 30 nm-diameter gold bead in the nanotube vicinity via chemical functionalization. The bead acts as the memory storage node while the cnfet operated in the subthreshold regime is an electrometer having exponential gain. Below 50 K, the transfer characteristics of some functionalized cnfets show highly reproducible hysteretical steps whose height can reach one decade of current. Evaluation of the capacitance confirms these current steps originate from single electron transfers between the bead and the nanotubes with a time retention exceeding 550s at 1.5K.

cond-mat.mes-hall↗

arXiv2005

Alteration of superconductivity of suspended carbon nanotubes by deposition of organic molecules

We have altered the superconductivity of a suspended rope of single walled carbon nanotubes, by coating it with organic polymers. Upon coating, the normal state resistance of the rope changes by less than 20 percent. But superconductivity, which on the bare rope shows up as a substantial resistance decrease below 300 mK, is gradualy suppressed. We correlate this to the suppression of radial breathing modes, measured with Raman Spectroscopy on suspended Single and Double-walled carbon nanotubes. This points to the breathing phonon modes as being responsible for superconductivity in carbon nanotubes.

cond-mat.supr-con↗

arXiv2002

Single Carbon Nanotube--Superconductor Entangler: noise correlations and EPR states

We propose a device which implements a solid-state nanostructured electron entangler. It consists of a single-walled carbon nanotube connected at both end to normal state electrodes and coupled in its middle part to a superconducting nanowire. Such a device acts as an electronic beam splitter for correlated electrons originating from the superconductor. We first show that it can be used to detect positive (bosonic--like) noise correlations in an fermionic system. Furthermore, it provides a source for entangled electrons in the two arms of the splitter. For generating entangled electron states, we propose two kinds of setup based either on spin or energy filters. It respectively consists of ferromagnetic pads and of a system of electrostatic gates which define quantum dots. The fabrication of this device would require state-of-the-art nanofabrication techniques, carbon nanotube synthesis and integration, as well as atomic force microscopy imaging and manipulation.

cond-mat.mes-hall↗

arXiv2001

Niobium and niobium nitride SQUIDs based on anodized nanobridges made with an Atomic Force Microscope

We present a fabrication method of superconducting quantum interference devices (SQUIDs) based on direct write lithography with an Atomic Force Microscope (AFM). This technique involves maskless local anodization of Nb or NbN ultrathin films using the voltage biased tip of the AFM. The SQUIDs are of weak-link type, for which two geometries have been tested: Dayem and variable thickness nanobridges. The magnetic field dependence of the maximum supercurrent Ic(flux) in resulting SQUIDs is thoroughly measured for different weak link geometries and for both tested materials. It is found that the modulation shape and depth of Ic(flux) curves are greatly dependent on the weak link size. We analyze the results taking into account the kinetic inductance of nanobridges and using the Likharev-Yakobson model. Finally we show that the present resolution reached by this technique (20nm) enables us to fabricate Nb weak-links which behavior approaches those of ideal Josephson junctions.

cond-mat.mes-hall↗