arXiv subjects

V. Braccini

Publications and source records attributed to V. Braccini.

At least 19 recordsLinked to original sources

arXiv2025

Flux flow and orbital upper critical field in multiband FeSe$_{0.5}$Te$_{0.5}$ explored by microwave magnetotransport

We measure the flux flow resistivity in FeSe$_{0.5}$Te$_{0.5}$ epitaxial films using a microwave dual-frequency technique (16 GHz and 27 GHz), in the range 5 K-$T_c$, in static magnetic fields up to 1.2 T. By applying a temperature scaling procedure, we extract from flux flow measurements the temperature dependence of the orbital upper critical field, that shows features of multiband superconductors. The reduced orbital upper critical field is then fitted with a two-band model with strong intraband and weak interband coupling, as expected in 11 Fe-based systems. We derive the vortex viscosity and we estimate the bands-averaged vortex core quasiparticle reduced scattering time within the Bardeen-Stephen framework. Our data suggest that, for our epitaxial FeSe$_{0.5}$Te$_{0.5}$ films, the quasiparticle scattering rate values are at the upper edge for the dirty regime. Finally, tentative numerical values of the orbital upper critical field and coherence length are provided.

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arXiv2017

Investigation of inter-grain critical current density in Bi2Sr2CaCu2O8+d superconducting wires and its relationship with the heat treatment protocol

In this work we investigate the effect of each different heat treatment stage in the fabrication of Bi2Sr2CaCu2O8+d superconducting wires on intra-grain and inter-grain superconducting properties. We measure magnetic critical temperature Tc values and transport critical current density Jc at temperatures from 4 K to 40 K and in fields up to 7 T. From an analysis of the temperature dependence of the self-field critical current density Jc(T) that takes into account weak link behavior and proximity effect, we study the grain boundaries (GB) transparency to supercurrents and we establish a relationship between GB oxygenation in the different steps of the fabrication process and the GB transparency to supercurrents. We find that grain boundary oxygenation starts in the first crystallization stage, but it becomes complete in the plateau at 836 °C and in slow cooling stages, and is further enhanced in the prolonged post annealing step. Such oxygenation makes GBs more conducting, thus improving the inter-grain Jc value and temperature dependence. On the other hand, from the inspection of the Tc values in the framework of the phase diagram dome, we find that grains are oxygenated already in the crystallization step up to the optimal doping, while successive slow cooling and post annealing treatments further enhance the degree of overdoping, especially if carried out in oxygen atmosphere rather than in air.

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arXiv2017

Current Induced Resistive State in Fe(Se,Te) Superconducting Nanobridges

We study the current-voltage characteristics of Fe(Se,Te) thin films deposited on CaF$_2$ substrates in form of nanostrips (width $w\simλ$, $λ$ the London penetration length). In view of a possible application of these materials to superconductive electronics and micro-electronics we focus on transport properties in small magnetic field, the one generated by the bias current. From the characteristics taken at different temperatures we derive estimates for the pinning potential $U$ and the pinning potential range $δ$. Since the sample lines are very narrow, the classical creep flow model provides a sufficiently accurate interpretation of the data only when the attractive interaction between magnetic flux lines of opposite sign is taken into account. The observed voltages and the induced detriment of the critical current of the nanostrips are compatible with the presence of few tens of magnetic field lines at the equilibrium and a strongly inhomogeneous current density distribution. In particular, we argue that the sharp corners defining the bridge geometry represent points of easy magnetic flux lines injection. The results are relevant for creep flow analysis in superconducting Fe(Se,Te) nanostrips.

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arXiv2013

Highly effective and isotropic pinning in epitaxial Fe(Se,Te) thin films grown on CaF2 substrates

We report on the isotropic pinning obtained in epitaxial Fe(Se,Te) thin films grown on CaF2 (001) substrate. High critical current density values larger than 1 MA/cm2 in self field in liquid helium are reached together with a very weak dependence on the magnetic field and a complete isotropy. Analysis through Transmission Electron Microscopy evidences the presence of defects looking like lattice disorder at a very small scale, between 5 and 20 nm, which are thought to be responsible for such isotropic behavior in contrast to what observed on SrTiO3, where defects parallel to the c-axis enhance pinning in that direction

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arXiv2012

A new approach for improving global critical current density in Fe(Se0.5Te0.5) polycrystalline materials

A novel method to prepare bulk Fe(Se0.5Te0.5) samples is presented, based on a melting process and a subsequent annealing treatment. With respect to the standard sintering technique, it produces much more homogeneous and denser samples, characterized by large and well interconnected grains. The resulting samples exhibit optimal critical temperature values, sharp resistive and magnetic transitions, large magnetic hysteresis loops and high upper critical fields are observed. Interestingly, the global critical current density is much enhanced as compared to the values reported in literature for bulk samples of the same 11 family, reaching about 103 A/cm2 at zero field at 4.2 K as assessed by magnetic, transport and magneto-optical techniques. Even more importantly, its field dependence turns out to be very weak, such that at μ_{0}H = 7 T it is suppressed only by a factor \sim2.

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arXiv2011

On the large role of weak uncorrelated pinning introduced by BZO nanorods at low temperatures in REBCO thin films

REBa$_{2}$Cu$_{3}$O$_{x}$ films can achieve remarkably high critical current density values by the incorporation of insulating nanoparticles. A particular interesting case concerns BaZrO$_{3}$ (BZO) nanorods, whose strongly correlated effect is seen at high temperatures. Here we investigate the field, temperature and angular dependence of the critical current density over a wide temperature range from 4.2 K to 77 K, and magnetic fields up to 31 T. We show that the correlated c-axis pinning of BZO nanorods becomes progressively less obvious at lower temperature. Indeed at 4.2 K and fields up to 31 T, the only correlated pinning is for fields parallel to the film plane. We interpret the change as being due to significant contributions from dense but weak pins that thermal fluctuations render ineffective at high temperatures but which become strong at lower temperatures.

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arXiv2009

Study of the MgB2 grain size role in ex-situ multifilamentary wires with thin filaments

The MgB2 superconductor has already demonstrated its applicative potential, in particular for DC applications such as MRI magnets, thanks to the low costs of the raw materials and to its simple production process. However further efforts have still to be made in order to broaden its employment also towards the AC applications such as SFCL, motors, transformers. The main issues are related to the reduction of the AC losses. Some of these can be faced by obtaining multifilamentary conductors with a large number of very fine filaments and, in this context, the powders granulometry can play a crucial role. We have prepared MgB2 starting powders with different granulometries and by the ex-situ P.I.T method we have realized multifilamentary wires with a number of filaments up to 361 and an average size of each filament lowered down to 30 microns. In particular we have studied the relationship between grain and filament size in terms of transport properties and show that the optimization of this ratio is possible in order to obtain suitable conductors for AC industrial applications.

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arXiv2008

Effect of grain refinement on enhancing critical current density and upper critical field in undoped MgB2 ex-situ tapes

Ex-situ Powder-In-Tube MgB2 tapes prepared with ball-milled, undoped powders showed a strong enhancement of the irreversibility field H*, the upper critical field Hc2 and the critical current density Jc(H) together with the suppression of the anisotropy of all of these quantities. Jc reached 104 A/cm2 at 4.2 K and 10 T, with an irreversibility field of about 14 T at 4.2 K, and Hc2 of 9 T at 25 K, high values for not-doped MgB2. The enhanced Jc and H* values are associated with significant grain refinement produced by milling of the MgB2 powder, which enhances grain boundary pinning, although at the same time also reducing the connectivity from about 12% to 8%. Although enhanced pinning and diminished connectivity are in opposition, the overall influence of ball milling on Jc is positive because the increased density of grains with a size comparable with the mean free path produces strong electron scattering that substantially increases Hc2, especially Hc2 perpendicular to the Mg and B planes.

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arXiv2008

Magnetic field dependence of vortex activation energy: a comparison between MgB2, NbSe2 and Bi2Sr2Ca2Cu3O10 superconductors

The dissipative mechanism at low current density is compared in three different classes of superconductors. This is achieved by measurement of resistance as a function of temperature and magnetic field in clean polycrystalline samples of NbSe2, MgB2 and Bi2Sr2Ca2Cu3O10 superconductors. Thermally activated flux flow behavior is clearly identified in bulk MgB2. While the activation energy at low fields for MgB2 is comparable to Bi2Sr2Ca2Cu3O10, its field dependence follows a parabolic behavior unlike a power law dependence seen in Bi2Sr2Ca2Cu3O10. We analyze our results based on the Kramer's scaling for grain boundary pinning in MgB2and NbSe2.

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arXiv2006

Effects of neutron irradiation on polycrystalline Mg11B2

We studied the influence of the disorder introduced in polycrystalline MgB2 samples by neutron irradiation. To circumvent self shielding effects due to the strong interaction between thermal neutrons and 10B we employed isotopically enriched 11B which contains 40 times less 10B than natural B. The comparison of electrical and structural properties of different series of samples irradiated in different neutron sources, also using Cd shields, allowed us to conclude that, despite the low 10B content, the main damage mechanisms are caused by thermal neutrons, whereas fast neutrons play a minor role. Irradiation leads to an improvement in both upper critical field and critical current density for an exposure level in the range 1-2x1018 cm-2. With increasing fluence the superconducting properties are depressed. An in-depth analysis of the critical field and current density behaviour has been carried out to identify what scattering and pinning mechanisms come into play. Finally the correlation between some characteristic lengths and the transition widths is analysed.

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arXiv2005

Enhanced flux pinning in neutron irradiated MgB2

We study the effect of neutron irradiation on the critical current density Jc of isotopically pure polycrystalline Mg11B2 samples. For fluences in the range 1017-1018 cm-2, Jc is enhanced and its dependence on magnetic field is significantly improved: we demonstrate that, in this regime, point-like pinning centers are effectively introduced in the system proportionally to the neutron fluence. Instead, for larger fluences, a strong suppression of the critical temperature accompanied by a decrease of both the upper critical field Bc2 and Jc is found.

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arXiv2004

Neutron Irradiation of Mg11B2 : From the Enhancement to the Suppression of Superconducting Properties

In this letter we present the effect of neutron irradiation up to fluences of 3.9 1019 n/cm2 on the superconducting properties of MgB2. In order to obtain a disorder structure homogeneously distributed, the experiment was carried out on bulk samples prepared with the 11B isotope. Up to fluences of 1018 n/cm2 the critical temperature is slightly diminished (36 K) and the superconducting properties are significantly improved; the upper critical field is increased from 13.5 T to 20.3 T at 12 K and the irreversibility field is doubled at 5 K. For larger neutron fluences the critical temperature is suppressed down to 12 K and the superconducting properties come out strongly degraded.

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arXiv2004

High-field superconductivity in alloyed MgB2 thin films

We investigated the effect of alloying on the upper critical field $H_{c2}$ in 12 $MgB_2$ films, in which disorder was introduced by growth, carbon doping or He-ion irradiation, finding a significant $H_{c2}$ enhancement in C-alloyed films, and an anomalous upward curvature of $H_{c2}(T)$. Record high values of $H_{c2}^{\perp}(4.2) \simeq 35T$ and $H_{c2}\|(4.2) \simeq 51T$ were observed perpendicular and parallel to the ab plane, respectively. The temperature dependence of $H_{c2}(T)$ is described well by a theory of dirty two-gap superconductivity. Extrapolation of the experimental data to T=0 suggests that $H_{c2}\|(0)$ approaches the paramagnetic limit of $\sim 70T$.

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arXiv2003

Critical Field of MGB2 : Crossover from Clean to Dirty Regimes

We have studied the upper critical field, Bc2, in poly-crystalline MgB2 samples in which disorder was varied in a controlled way to carry selectively p and s bands from clean to dirty limit. We have found that the clean regime survives when p bands are dirty and s bands are midway between clean and dirty. In this framework we can explain the anomalous behaviour of Al doped samples, in which Bc2 decreases as doping increases.

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arXiv2003

Very high upper critical fields in MgB2 produced by selective tuning of impurity scattering

We report a significant enhancement of the upper critical field $H_{c2}$ of different $MgB_2$ samples alloyed with nonmagnetic impurities. By studying films and bulk polycrystals with different resistivities $ρ$, we show a clear trend of $H_{c2}$ increase as $ρ$ increases. One particular high resistivity film had zero-temperature $H_{c2}(0)$ well above the $H_{c2}$ values of competing non-cuprate superconductors such as $Nb_3Sn$ and Nb-Ti. Our high-field transport measurements give record values $H_{c2}^\perp (0) \approx 34T$ and $H_{c2}\|(0) \approx 49 T$ for high resistivity films and $H_{c2}(0)\approx 29 T$ for untextured bulk polycrystals. The highest $H_{c2}$ film also exhibits a significant upward curvature of $H_{c2}(T)$, and temperature dependence of the anisotropy parameter $γ(T) = H_{c2}\|/ H_{c2}^\perp$ opposite to that of single crystals: $γ(T)$ decreases as the temperature decreases, from $γ(T_c) \approx 2$ to $γ(0) \approx 1.5$. This remarkable $H_{c2}$ enhancement and its anomalous temperature dependence are a consequence of the two-gap superconductivity in $MgB_2$, which offers special opportunities for further $H_{c2}$ increase by tuning of the impurity scattering by selective alloying on Mg and B sites. Our experimental results can be explained by a theory of two-gap superconductivity in the dirty limit. The very high values of $H_{c2}(T)$ observed suggest that $MgB_2$ can be made into a versatile, competitive high-field superconductor.

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arXiv2003

Nanoscale-SiC doping for enhancing Jc and Hc2 in the Superconducting MgB2

The effect of nanoscale-SiC doping of MgB2 was investigated using transport and magnetic measurements. It was found that there is a clear correlation between the critical temperature Tc, the resistivity r, the residual resistivity ratio, RRR = R(300K)/R(40K), the irreversibility field H* and the alloying state in the samples. SiC-doping introduced many nano-scale precipitates, provoking an increase of r(40K) from 1 mW-cm (RRR = 15) for the clean limit sample to 300 mW-cm (RRR = 1.75) for the SiC-doped sample, leading to significant enhancement of Hc2 and H* with only minor effect on Tc. EELS analysis revealed a number of nano-scale impurity phases: Mg2Si, MgO, MgB4, BOx, SixByOz, BC and unreacted SiC in the doped sample. TEM study showed an extensive domain structure of 2-4nm domains induced by SiC doping. The Jc for the 10% nano-SiC doped sample increased substantially at all fields and temperatures compared to the undoped samples, due to the strong increase in Hc2 and H* produced by SiC doping.

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arXiv2002

Angular dependence of magnetoresistivity in c-oriented MgB2 thin film

The anisotropy of MgB2 is still under debate: its value, strongly dependent on the sample and on the measuring method, ranges between 1.2 and 13. In this work we present our results on a MgB2 c-oriented superconducting thin film. To evaluate the anisotropy, we followed two different approaches. Firstly, magnetoresistivity was measured as a function of temperature at selected magnetic fields applied both parallel and perpendicular to the c-axis; secondly, we measured magnetoresistivity at selected temperatures and magnetic fields, varying the angle q between the magnetic field and the c-axis. The anisotropy estimated from the ratio between the upper critical fields parallel and perpendicular to the c-axis and the one obtained in the framework of the scaling approach within the anisotropic Ginzburg-Landau theory are different but show a similar trend in the temperature dependence. The obtained results are compared and discussed in the light of the two-band nature of MgB2. A comparison between critical fields in thin films and single crystal is also performed.

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arXiv2002

Thermal conductivity of MgB$_{2}$ in the superconducting state

We present thermal conductivity measurements on very pure and dense bulk samples, as indicated by residual resistivity values as low as 0.5 mW cm and thermal conductivity values higher than 200 W/mK. In the normal state we found that the Wiedemann Franz law, in its generalized form, works well suggesting that phonons do not contribute to the heat transport. The thermal conductivity in the superconducting state has been analysed by using a two-gap model. Thank to the large gap anisotropy we were able to evaluate quantitatively intraband scattering relaxation times of $π$ and $σ$ bands, which depend on the disorder in different way; namely, as the disorder increases, it reduces more effectively the relaxation times of $π$ than of $σ$ bands, as suggested by a recent calculation [1].

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