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V. Braza

Publications and source records attributed to V. Braza.

3 recordsLinked to original sources

Thermal Control of Size Distribution and Optical Properties in Gallium Nanoparticles

Gallium nanoparticles (Ga-NPs) exhibit promising plasmonic properties spanning ultraviolet to infrared spectral regions, making them suitable for diverse nanophotonic applications. However, the synthesis of uniform and ordered Ga-NP arrays remains challenging due to size heterogeneity arising from coarsening during physical deposition. Here, we systematically investigate the influence of substrate temperature on the nucleation, growth, and homogenization dynamics of Ga-NPs formed via Joule-effect thermal evaporation on GaAs substrates. Atomic force microscopy and scanning electron microscopy reveal temperature-dependent transitions from broad, bimodal size distributions to narrow dispersed arrays within an optimal substrate temperature range of 300-350{\deg}C. Above this window, increased diffusion and desorption induce size increase, decreased density, and morphological relaxation manifested as NP shape flattening. Optical reflectance measurements identify distinct localized surface plasmon resonance (LSPR) modes whose energies are closely correlated with NP dimensions and aspect ratios. A figure of merit combining NP density and size uniformity quantifies optimal conditions at intermediate substrate temperatures, consistent with enhanced plasmonic quality factors derived from spectral LSPRs. In-situ post-deposition annealing experiments confirm Ostwald ripening as the dominant coarsening mechanism at elevated temperatures and highlight the necessity of rapid cooling and oxide shell formation to stabilize homogeneous arrays. Cross-sectional transmission electron microscopy with electron energy-loss spectroscopy validates the core-shell structure of individual Ga-NPs, quantifies temperature-dependent oxide shell thickening, and confirms the liquid metal character of the Ga within the core...

cond-mat.mtrl-sci

Growth interruption strategies for interface optimization in GaAsSb/GaAsN type-II superlattices

Recently, GaAsSb/GaAsN type II short-period superlattices (SLs) have been proposed as suitable structures to be implemented in the optimal design of monolithic multi-junction solar cells. However, due to strong surface Sb segregation, experimental Sb composition profiles differ greatly from the nominal square-wave design. In this work, the improvement of the interface quality of these SLs in terms of compositional abruptness and surface roughness has been evaluated by implementing different growth interruption times under Sb4/As4 (soaking) and As4 (desorption) overpressure conditions before and after the growth of GaAsSb layers, respectively. The combined effects of both processes enhance Sb distribution, achieving squarer compositional profiles with reduced surface roughness interfaces. It has been found that the improvement in compositional abruptness is quantitatively much higher at the lower interface, during soaking, than at the upper interface during desorption. Conversely, a larger decrease in surface roughness is achieved at the upper interface than at the lower interface. Fitting of the Sb segregation profiles using the 3-layer kinetic fluid model has shown that the increase in Sb incorporation rate is due to the decrease in segregation energy, presumably to changes in the surface reconstruction of the floating layer at the surface.

cond-mat.mtrl-sci

Strain-balanced type-II superlattices for efficient multi-junction solar cells

We propose type-II GaAsSb/GaAsN superlattices (SLs) lattice-matched to GaAs as a novel material for the 1 eV sub-cells present in highly efficient GaAs/Ge-based multi-junction solar cells. We demonstrate that, among other benefits, the spatial separation of Sb and N allows a better control over composition and lattice matching, avoiding the growth problems related to the concomitant presence of both elements in GaAsSbN layers. This approach not only reduces clustering and improves crystal quality and interface abruptness, but also allows for additional control of the effective bandgap in the 1.0-1.15 eV spectral region through the SL period thickness. The optimized SL structure exhibits a type-II band alignment and strong electronic coupling at 0 V. Both effects cooperate to increase the minority carrier collection and leads to a net strong enhancement of the external quantum efficiency (EQE) under photovoltaic conditions with respect to bulk layers of equivalent thickness.

cond-mat.mtrl-sci