arXiv subjects

V. Bychkov

Publications and source records attributed to V. Bychkov.

23 records · Page 2Linked to original sources

arXiv2011

Interface dynamics of a two-component Bose-Einstein condensate driven by an external force

The dynamics of an interface in a two-component Bose-Einstein condensate driven by a spatially uniform time-dependent force is studied. Starting from the Gross-Pitaevskii Lagrangian, the dispersion relation for linear waves and instabilities at the interface is derived by means of a variational approach. A number of diverse dynamical effects for different types of the driving force is demonstrated, which includes the Rayleigh-Taylor instability for a constant force, the Richtmyer-Meshkov instability for a pulse force, dynamic stabilization of the Rayleigh-Taylor instability and onset of the parametric instability for an oscillating force. Gaussian Markovian and non-Markovian stochastic forces are also considered. It is found that the Markovian stochastic force does not produce any average effect on the dynamics of the interface, while the non-Markovian force leads to exponential perturbation growth.

cond-mat.quant-gas↗

arXiv2011

A model for the dynamics and internal structure of planar doping fronts in organic semiconductors

The dynamics and internal structure of doping fronts in organic semiconductors are investigated theoretically using an extended drift-diffusion model for ions, electrons and holes. The model also involves the injection barriers for electrons and holes in the partially doped regions in the form of the Nernst equation, together with a strong dependence of the electron and hole mobility on concentrations. Closed expressions for the front velocities and the ion concentrations in the doped regions are obtained. The analytical theory is employed to describe the acceleration of the p- and n-fronts towards each other. The analytical results show very good agreement with the experimental data. Furthermore, it is shown that the internal structure of the doping fronts is determined by the diffusion and mobility processes. The asymptotic behavior of the concentrations and the electric field is studied analytically inside the doping fronts. The numerical solution for the front structure confirms the most important predictions of the analytical theory: a sharp head of the front in the undoped region, a smooth relaxation tail in the doped region, and a plateau at the critical point of transition from doped to undoped regions.

cond-mat.mtrl-sci↗

arXiv2011

Fast electrochemical doping due to front instability in organic semiconductors

The electrochemical doping transformation in organic semiconductor devices is studied in application to light-emitting cells. It is shown that the device performance can be significantly improved by utilizing new fundamental properties of the doping process. We obtain an instability, which distorts the doping fronts and increases the doping rate considerably. We explain the physical mechanism of the instability, develop theory, provide experimental evidence, and perform numerical simulations. We further show how improved device design can amplify the instability thus leading to a much faster doping process and device kinetics.

cond-mat.mtrl-sci↗

arXiv2010

Magnetic Richtmyer-Meshkov instability in a two-component Bose-Einstein condensate

The magnetically induced Richtmyer-Meshkov instability in a two-component Bose-Einstein condensate is investigated. We construct and study analytical models describing the development of the instability at both the linear and nonlinear stages. The models indicate new features of the instability: the influence of quantum capillary waves and the separation of droplets, which are qualitatively different from the classical case. We perform numerical simulations of the instability in a trapped Bose-Einstein condensate using the Gross-Pitaevskii equation and compare the simulation results to the model predictions.

cond-mat.quant-gas↗

arXiv2009

Model of the electrochemical conversion of an undoped organic semiconductor film to a doped conductor film

We develop a model describing the electrochemical conversion of an organic semiconductor (specifically, the active material in a light-emitting electrochemical cell) from the undoped non-conducting state to the doped conducting state. The model takes into account both strongly concentration-dependent mobility and diffusion for the electronic charge carriers and the Nernst equation in the doped conducting regions. It is demonstrated that the experimentally observed doping front progression in light-emitting electrochemical cells can be accurately described with this model.

cond-mat.mtrl-sci↗