arXiv subjects

V. Chandrasekhar

Publications and source records attributed to V. Chandrasekhar.

At least 19 recordsLinked to original sources

arXiv2020

Observation of zero-field transverse resistance in AlO$_x$/SrTiO$_3$ interface devices

Domain walls in AlO$_x$/SrTiO$_3$ (ALO/STO) interface devices at low temperatures give a rise to a new signature in the electrical transport of two-dimensional carrier gases formed at the surfaces or interfaces of STO-based heterostructures: a finite transverse resistance observed in Hall bars in zero external magnetic field. This transverse resistance depends on the local domain wall configuration and hence changes with temperature, gate voltage, thermal cycling and position along the sample, and can even change sign as a function of these parameters. The transverse resistance is observed below $\simeq$ 70 K but grows and changes significantly below $\simeq$40 K, the temperature at which the domain walls become increasingly polar. Surprisingly, the transverse resistance is much larger in (111) oriented heterostructures in comparison to (001) oriented heterostructures. Measurements of the capacitance between the conducting interface and an electrode applied to the substrate, which reflect the dielectric constant of the STO, indicate that this difference may be related to the greater variation of the temperature dependent dielectric constant with electric field when the electric field is applied in the [111] direction. The finite transverse resistance can be explained inhomogeneous current flow due to the preferential transport of current along domain walls that are not collinear with the nominal direction of the injected current.

cond-mat.mes-hall↗

arXiv2020

A Mach-Zehnder interferometer based tuning fork microwave impedance microscope

We describe here the implementation of an interferometer-based microwave impedance microscope on a home-built tuning-fork based scanning probe microscope (SPM). Tuning-fork based SPMs, requiring only two electrical contacts for self-actuation and self-detection of the tuning fork oscillation, are especially well suited to operation in extreme environments such as low temperatures, high magnetic fields or restricted geometries where the optical components required for conventional detection of cantilever deflection would be difficult to introduce. Most existing and commercially available systems rely on optical detection of the deflection of specially designed microwave cantilevers, limiting their application. A tuning-fork based microwave impedance microscope with a resonant cavity near the tip was recently implemented: we report here an enhancement that incorporates a microwave interferometer, which affords better signal to noise as well as wider tunability in terms of microwave frequency.

physics.app-ph↗

arXiv2018

Strong spin-orbit coupling and magnetism in (111) (La$_{0.3}$Sr$_{0.7}$)(Al$_{0.65}$Ta$_{0.35})$/SrTiO$_3$

Strong correlations, multiple lattice degrees of freedom, and the ease of doping make complex oxides a source of great research interest. Complex oxide heterointerfaces break inversion symmetry and can host a two dimensional carrier gas, which can display a variety of coexisting and competing phenomena. In the case of heterointerfaces based on SrTiO$_3$, many of these phenomena can be effectively tuned by using an electric gate, due to the large dielectric constant of SrTiO$_3$. Most studies so far have focused on (001) oriented heterostructures; however, (111) oriented heterostructures have recently gained attention due to the possibility of finding exotic physics in these systems due their hexagonal surface crystal symmetry. In this work, we use magnetoresistance to study the evolution of spin-orbit interaction and magnetism in a new system, (111) oriented (La$_{0.3}$Sr$_{0.7}$)(Al$_{0.65}$Ta$_{0.35}$)/SrTiO$_3$. At more positive values of the gate voltage, which correspond to high carrier densities, we find that transport is multiband, and dominated by high mobility carriers with a tendency towards weak localization. At more negative gate voltages, the carrier density is reduced, the high mobility bands are depopulated, and weak antilocalization effects begin to dominate, indicating that spin-orbit interaction becomes stronger. At millikelvin temperatures, and gate voltages corresponding to the strong spin-orbit regime, we observe hysteresis in magnetoresistance, indicative of ferromagnetism in the system. Our results suggest that in the (111) (La$_{0.3}$Sr$_{0.7}$)(Al$_{0.65}$Ta$_{0.35}$)/SrTiO$_3$ system, low mobility carriers which experience strong spin-orbit interactions participate in creating magnetic order in the system.

cond-mat.str-el↗

arXiv2018

Low temperature magnetoresistance of (111) (La$_{0.3}$Sr$_{0.7}$)(Al$_{0.65}$Ta$_{0.35}$)/SrTiO$_3$

The two dimensional conducting interfaces in SrTiO$_3$-based systems are known to show a variety of coexisting and competing phenomena in a complex phase space. Magnetoresistance measurements, which are typically used to extract information about the various interactions in these systems, must be interpreted with care, since multiple interactions can contribute to the resistivity in a given range of magnetic field and temperature. Here we review all the phenomena that can contribute to transport in SrTiO$_3$-based conducting interfaces at low temperatures, and discuss possible ways to distinguish between various phenomena. We apply this analysis to the magnetoresistance data of (111) oriented (La$_{0.3}$Sr$_{0.7}$)(Al$_{0.65}$Ta$_{0.35}$)/STO (LSAT/STO) heterostructures in perpendicular field, and find an excess negative magnetoresistance contribution which cannot be explained by weak localization alone. We argue that contributions from magnetic scattering as well as electron-electron interactions can provide a possible explanation for the observed magnetoresistance.

cond-mat.mes-hall↗

arXiv2017

Signatures of Electronic Nematicity in (111) LaAlO$_3$/SrTiO$_3$ Interfaces

Symmetry breaking is a fundamental concept in condensed matter physics whose presence often heralds new phases of matter. For instance, the breaking of time reversal symmetry is traditionally linked to magnetic phases in a material, while the breaking of gauge symmetry can lead to superfluidity/superconductivity. Nematic phases are phases in which rotational symmetry is broken while maintaining translational symme- try, and are traditionally associated with liquid crystals. Electronic nematic states where the or- thogonal in-plane crystal directions have different electronic properties have garnered a great deal of attention after their discovery in Sr$_3$Ru$_2$O$_7$, multiple iron based superconductors, and in the superconducting state of CuBiSe. Here we demonstrate the existence of an electronic ne- matic phase in the two-dimensional carrier gas that forms at the (111) LaAlO$_3$ (LAO)/SrTiO$_3$ (STO) interface that onsets at low temperatures, and is tunable by an electric field.

cond-mat.str-el↗

arXiv2017

Magnetoresistance in the superconducting state at the (111) LaAlO$_3$/SrTiO$_3$ interface

Condensed matter systems that simultaneously exhibit superconductivity and ferromagnetism are rare due the antagonistic relationship between conventional spin-singlet superconductivity and ferromagnetic order. In materials in which superconductivity and magnetic order is known to coexist (such as some heavy-fermion materials), the superconductivity is thought to be of an unconventional nature. Recently, the conducting gas that lives at the interface between the perovskite band insulators LaAlO$_3$ (LAO) and SrTiO$_3$ (STO) has also been shown to host both superconductivity and magnetism. Most previous research has focused on LAO/STO samples in which the interface is in the (001) crystal plane. Relatively little work has focused on the (111) crystal orientation, which has hexagonal symmetry at the interface, and has been predicted to have potentially interesting topological properties, including unconventional superconducting pairing states. Here we report measurements of the magnetoresistance of (111) LAO/STO heterostructures at temperatures at which they are also superconducting. As with the (001) structures, the magnetoresistance is hysteretic, indicating the coexistence of magnetism and superconductivity, but in addition, we find that this magnetoresistance is anisotropic. Such an anisotropic response is completely unexpected in the superconducting state, and suggests that (111) LAO/STO heterostructures may support unconventional superconductivity.

cond-mat.str-el↗

arXiv2017

Electrostatic tuning of magnetism at the conducting (111) (La$_{0.3}$Sr$_{0.7}$)(Al$_{0.65}$Ta$_{0.35}$)/SrTiO$_3$ interface

We present measurements of the low temperature electrical transport properties of the two dimensional carrier gas that forms at the interface of $(111)$ (La$_{0.3}$Sr$_{0.7}$)(Al$_{0.65}$Ta$_{0.35}$)/SrTiO$_3$ (LSAT/STO) as a function of applied back gate voltage, $V_g$. As is found in (111) LaAlO$_3$/SrTiO$_3$ interfaces, the low-field Hall coefficient is electron-like, but shows a sharp reduction in magnitude below $V_g \sim$ 20 V, indicating the presence of hole-like carriers in the system. This same value of $V_g$ correlates approximately with the gate voltage below which the magnetoresistance evolves from nonhysteretic to hysteretic behavior at millikelvin temperatures, signaling the onset of magnetic order in the system. We believe our results can provide insight into the mechanism of magnetism in SrTiO$_3$ based systems.

cond-mat.str-el↗

arXiv2017

Superconductivity and Frozen Electronic States at the (111) LaAlO$_3$/SrTiO$_3$ Interface

In spite of Anderson's theorem, disorder is known to affect superconductivity in conventional s-wave superconductors. In most superconductors, the degree of disorder is fixed during sample preparation. Here we report measurements of the superconducting properties of the two-dimensional gas that forms at the interface between LaAlO$_3$ (LAO) and SrTiO$_3$ (STO) in the (111) crystal orientation, a system that permits \emph{in situ} tuning of carrier density and disorder by means of a back gate voltage $V_g$. Like the (001) oriented LAO/STO interface, superconductivity at the (111) LAO/STO interface can be tuned by $V_g$. In contrast to the (001) interface, superconductivity in these (111) samples is anisotropic, being different along different interface crystal directions, consistent with the strong anisotropy already observed other transport properties at the (111) LAO/STO interface. In addition, we find that the (111) interface samples "remember" the backgate voltage $V_F$ at which they are cooled at temperatures near the superconducting transition temperature $T_c$, even if $V_g$ is subsequently changed at lower temperatures. The low energy scale and other characteristics of this memory effect ($<1$ K) distinguish it from charge-trapping effects previously observed in (001) interface samples.

cond-mat.str-el↗

arXiv2016

Transduction between electrical energy and the heat in a carbon nanotube using a voltage-controlled doping

High electric conductivity ~100 MegaSiemens/m and Seebeck coefficient >200 mkV/K of carbon nanotubes (CNT) make them attractive for a variety of applications. Unfortunately, a high thermal conductivity ~ 3000 W/(m*K) due to the phonon transport limits their capability for transforming energy between the heat and electricity. Here we show that increasing the charge carrier concentrations not only leads to an increase of both electric conductivity and Seebeck coeffcient, but also causes a substantial suppression of the thermal conductivity due to intensifying the phonon-electron collisions. A strong transduction effect corresponding to an effective electron temperature change ~115 K was observed in a CNT device, where the local gate electrodes have controlled the charge doping in the opposite ends. Transduction between the heat and the energy of the electron subsystem corresponds to an impressive figure of merit cold ZT ~ 6 and the transduced power density P ~ 80kW/cm2.

cond-mat.mes-hall↗

arXiv2016

Anisotropic, multi-carrier transport at the (111) LaAlO$_3$/SrTiO$_3$ interface

The conducting gas that forms at the interface between LaAlO$_3$ and SrTiO$_3$ has proven to be a fertile playground for a wide variety of physical phenomena. The bulk of previous research has focused on the (001) and (110) crystal orientations. Here we report detailed measurements of the low-temperature electrical properties of (111) LAO/STO interface samples. We find that the low-temperature electrical transport properties are highly anisotropic, in that they differ significantly along two mutually orthogonal crystal orientations at the interface. While anisotropy in the resistivity has been reported in some (001) samples and in (110) samples, the anisotropy in the (111) samples reported here is much stronger, and also manifests itself in the Hall coefficient as well as the capacitance. In addition, the anisotropy is not present at room temperature and at liquid nitrogen temperatures, but only at liquid helium temperatures and below. The anisotropy is accentuated by exposure to ultraviolet light, which disproportionately affects transport along one surface crystal direction. Furthermore, analysis of the low-temperature Hall coefficient and the capacitance as a function of back gate voltage indicates that in addition to electrons, holes contribute to the electrical transport.

cond-mat.str-el↗

arXiv2013

Magnetic field tuned superconductor-to-insulator transition at the LaAlO$_3$ /SrTiO$_3$ interface

We present a study of the magnetic field tuned superconductor-to-insulator transition (SIT) in the electron gas that forms at the LaAlO$_3$/SrTiO$_3$ interface. We find that the magnetic field induces a transition into a weakly insulating state, as is observed for the electrostatically tuned SIT at this interface. Finite size scaling of the magnetoresistance yields the critical exponent product $zν\simeq$ 7/3, indicating that the transition is governed by quantum percolation effects. While such critical exponents have been reported previously for high resistance films, they have not been reported for a low resistance system like ours, with a maximum sheet resistance of $\approx$ 1.5 k$Ω$, much less than the quantum of resistance $R_Q \equiv h/4e^2 = 6.45$ k$Ω$.

cond-mat.supr-con↗

arXiv2012

Evidence for charge-vortex duality at the LaAlO$_3$/SrTiO$_3$ interface

The concept of duality has proved extremely powerful in extending our understanding in many areas of physics (1, 2). Charge-vortex duality has been proposed (3, 4) as a model to understand the superconductor to insulator transition (SIT) in disordered thin films (5, 6) and Josephson junction arrays (7, 8, 9). In this model, on the superconducting side, one has delocalized Cooper pairs but localized vortices; while on the insulating side, one has localized Cooper pairs but mobile vortices. Here we show a new experimental manifestation of this duality in the electron gas that forms at the interface between LaAlO$_3$ (LAO) and SrTiO$_3$ (STO) (10, 11, 12, 13, 14). The effect is due to the motion of vortices generated by the magnetization dynamics of the ferromagnet that also forms at the same interface (14, 15, 16), which results in an increase in resistance on the superconducting side of the transition, but an increase in conductance on the insulating side.

cond-mat.supr-con↗

arXiv2011

Thermal fluctuations and flux-tunable barrier in proximity Josephson junctions

The effect of thermal fluctuations in Josephson junctions is usually analysed using the Ambegaokar-Halperin (AH) theory in the context of thermal activation. "Enhanced" fluctuations, demonstrated by broadening of current-voltage characteristics, have previously been found for proximity Josephson junctions. Here we report measurements of micron-scale normal metal loops contacted with thin superconducting electrodes, where the unconventional loop geometry enables tuning of the junction barrier with applied flux; for some geometries, the barrier can be effectively eliminated. Stronger fluctuations are observed when the flux threading the normal metal loop is near an odd half-integer flux quantum, and for devices with thinner superconducting electrodes. These findings suggest that the activation barrier, which is the Josephson coupling energy of the proximity junction, is different from that of conventional Josephson junctions. Simple one dimensional quasiclassical theory can predict the interference effect due to the loop structure, but the exact magnitude of the coupling energy cannot be computed without taking into account the details of the sample dimensions. In this way, the physics of this system is similar to the phase slipping process in thin superconducting wires. Besides shedding light on thermal fluctuations in proximity junctions, the findings here also demonstrate a new type of superconducting interference device with two normal branches sharing the same SN interface on both sides of the device, which has technical advantages for making symmetrical interference devices.

cond-mat.supr-con↗

arXiv2011

Coexistence of superconductivity and ferromagnetism in two dimensions

Ferromagnetism is usually considered to be incompatible with conventional superconductivity, as it destroys the singlet correlations responsible for the pairing interaction. Superconductivity and ferromagnetism are known to coexist in only a few bulk rare-earth materials. Here we report evidence for their coexistence in a two-dimensional system: the interface between two bulk insulators, LaAlO$_3$ (LAO) and SrTiO$_3$ (STO), a system that has been studied intensively recently. Magnetoresistance, Hall and electric-field dependence measurements suggest that there are two distinct bands of charge carriers that contribute to the interface conductivity. The sensitivity of properties of the interface to an electric field make this a fascinating system for the study of the interplay between superconductivity and magnetism.

cond-mat.supr-con↗

arXiv2010

Conductance asymmetry in point-contacts on epitaxial thin films of Ba(Fe$_{0.92}$Co$_{0.08}$)$_2$As$_2$

Point-contact spectroscopy is a powerful tool for probing superconductors. One of the most common observations in the point-contact spectra on the recently discovered ferropnictide superconductors is a large conductance asymmetry with respect to voltage across the point-contact. In this paper we show that the antisymmetric part of the point-contact spectrum between a silver tip and an epitaxial thin film of Ba(Fe$_{0.92}$Co$_{0.08}$)$_2$As$_2$ shows certain unique features. These features have an interesting evolution with increasing temperature up to a temperature that is 30% larger than the critical temperature $T_c$ of the superconductor. We argue that this evolution can be associated with the rich normal state properties of these materials.

cond-mat.supr-con↗

arXiv2010

Phase-incoherent superconducting pairs in the normal state of Ba(Fe$_{1-x}$Co$_x$)$_2$As$_2$

The normal state properties of the recently discovered ferropnictide superconductors might hold the key to understanding their exotic superconductivity. Using point-contact spectroscopy we show that Andreev reflection between an epitaxial thin film of Ba(Fe$_{0.92}$Co$_{0.08}$)$_2$As$_2$ and a silver tip can be seen in the normal state of the film up to temperature $T\sim1.3T_c$, where $T_c$ is the critical temperature of the superconductor. Andreev reflection far above $T_c$ can be understood only when superconducting pairs arising from strong fluctuation of the phase of the complex superconducting order parameter exist in the normal state. Our results provide spectroscopic evidence of phase-incoherent superconducting pairs in the normal state of the ferropnictide superconductors.

cond-mat.supr-con↗

arXiv2009

Flux-tunable barrier in proximity Josephson junctions

We report experiments on micron-scale normal metal loop connected by superconducting wires, where the sample geometry enables full modulation of the thermal activation barrier with applied magnetic flux, resembling a symmetric quantum interference device. We find that except a constant factor of five, the modulation of the barrier can be well fitted by the Ambegaokar-Halperin model for a resistively shunted junction, extended here to a proximity junction with flux-tunable coupling energy estimated using quasiclassical theory. This observation sheds light on the understanding of effect of thermal fluctuation in proximity junctions, while may also lead to an unprecedented level of control in quantum interference devices.

cond-mat.supr-con↗

arXiv2007

Thermopower Oscillation Symmetries in a Double-Loop Andreev Interferrometer

Andreev interferometers, normal metal wires coupled to superconducting loops, display phase coherent changes as the magnetic flux through the superconducting loops is altered. Properties such as the electronic and thermal conductance of these devices have been shown to oscillate symmetrically about zero with a period equal to one superconducting flux quantum, $Φ_o = h/2e$. However, the thermopower of these devices can oscillate symmetrically or antisymmetrically depending on the geometry of the sample, a phenomenon not well understood theoretically. Here we report on thermopower measurements of a double-loop Andreev interferometer where two Josephson currents in the normal metal wire may be controlled independently. The amplitude and symmetries of the observed thermopower oscillations may help to illuminate the unexplained dependence of oscillation symmetry on sample geometry.

cond-mat.mes-hall↗