arXiv subjects

V. Dobrosavljević

Publications and source records attributed to V. Dobrosavljević.

At least 19 recordsLinked to original sources

arXiv2022

Disorder-dominated quantum criticality in moiré bilayers

Moiré bilayer materials have recently attracted much attention following the discovery of various correlated insulating states at specific band fillings. Here we discuss the metal-insulator transitions (MITs) that have been observed in the same devices, but at fillings far from the strongly correlated regime dominated by Mott-like physics, displaying many similarities to other examples of disorder-dominated MITs. We propose a minimal theoretical model describing the interplay of interactions and disorder, which able to capture most experimental trends observed on several devices.

cond-mat.str-el↗

arXiv2022

Mott domain walls: a (strongly) non-Fermi liquid state of matter

Most Mott systems display a low-temperature phase coexistence region around the metal-insulator transition. The domain walls separating the respective phases have very recently been observed both in simulations and in experiments, displaying unusual properties. First, they often cover a significant volume fraction, thus cannot be neglected. Second, they neither resemble a typical metal nor a standard insulator, displaying unfamiliar temperature dependence of (local) transport properties. Here we take a closer look at such domain wall matter by examining an appropriate unstable solution of the Hubbard model. We show that transport in this regime is dominated by the emergence of "resilient quasiparticles" displaying strong non-Fermi liquid features, reflecting the quantum-critical fluctuations in the vicinity of the Mott point.

cond-mat.str-el↗

arXiv2022

Spin effect on the low-temperature resistivity maximum in a strongly interacting 2D electron system

The increase in the resistivity with decreasing temperature followed by a drop by more than one order of magnitude is observed on the metallic side near the zero-magnetic-field metal-insulator transition in a strongly interacting two-dimensional electron system in ultra-clean SiGe/Si/SiGe quantum wells. We find that the temperature $T_{\text{max}}$, at which the resistivity exhibits a maximum, is close to the renormalized Fermi temperature. However, rather than increasing along with the Fermi temperature, the value $T_{\text{max}}$ decreases appreciably for spinless electrons in spin-polarizing (parallel) magnetic fields. The observed behaviour of $T_{\text{max}}$ cannot be described by existing theories. The results indicate the spin-related origin of the effect.

cond-mat.str-el↗

arXiv2021

Unusually thick metal-insulator domain walls around the Mott point

Many Mott systems feature a first-order metal-insulator transition at finite temperatures, with an associated phase coexistence region displaying inhomogeneities and local phase separation. Here one typically finds "bubbles" or domains of the respective phases, which are separated by surprisingly thick, or fat, domain walls, as revealed both by imaging experiments and recent theoretical modeling. To gain insight into this unexpected behavior, we perform a systematic model study of the structure of such metal-insulator domain walls around the Mott point, within the dynamical mean-field theory framework. Our study reveals that a mechanism producing such "fat" domain walls can be traced to strong magnetic frustration, which is expected to be a robust feature of "spin-liquid" Mott systems.

cond-mat.str-el↗

arXiv2021

Phase coexistence at the first-order Mott-transition revealed by pressure-dependent dielectric spectroscopy of $κ$-(BEDT-TTF)$_2$Cu$_2$(CN)$_3$

The dimer Mott insulator $κ$-(BEDT-TTF)$_2$Cu$_2$(CN)$_3$ can be tuned into a metallic and superconducting state upon applying pressure of 1.5 kbar and more. We have performed dielectric spectroscopy measurements (7 kHz to 5 MHz) on $κ$-(BEDT-TTF)$_2$Cu$_2$(CN)$_3$ single crystals as a function of temperature (down to $T=8$ K) and pressure (up to $p=4$ kbar). At ambient conditions, a relaxor-like dielectric behavior develops below 50 K that shifts toward lower temperatures as the crystal is pressurized. Interestingly, a second peak emerges in $\varepsilon_{1}(T)$ around $T=15$ K, which becomes strongly enhanced with pressure and is attributed to a small volume fraction of metallic puddles in the insulating host phase. When approaching the phase boundary, this peak diverges rapidly reaching $\varepsilon_{1} \approx 10^{5}$. Our dynamical mean-field theory calculations substantiate that the dielectric catastrophe at the Mott transition is not caused by closing the energy gap, but due to the spatial coexistence of correlated metallic and insulating regions. We discuss the percolative nature of the first-order Mott insulator-to-metal transition in all details.

cond-mat.str-el↗

arXiv2020

Manifestation of strong correlations in transport in ultra-clean SiGe/Si/SiGe quantum wells

We observe that in a strongly interacting two-dimensional electron system in ultra-clean SiGe/Si/SiGe quantum wells, the resistivity on the metallic side near the metal-insulator transition increases with decreasing temperature, reaches a maximum at some temperature, and then decreases by more than one order of magnitude. We scale the resistivity data in line with expectations for the transport of strongly correlated Fermi systems and find a nearly perfect agreement with theory over a wide range of electron densities.

cond-mat.str-el↗

arXiv2020

The two-dimensional disordered Mott metal-insulator transition

We studied several aspects of the Mott metal-insulator transition in the disordered case. The model on which we based our analysis is the disordered Hubbard model, which is the simplest model capable of capturing the Mott metal-insulator transition. We investigated this model through the Statistical Dynamical Mean-Field Theory (statDMFT). This theory is a natural extension of the Dynamical Mean-Field Theory (DMFT), which has been used with relative success in the last several years with the purpose of describing the Mott transition in the clean case. As is the case for the latter theory, the statDMFT incorporates the electronic correlation effects only in their local manifestations. Disorder, on the other hand, is treated in such a way as to incorporate Anderson localization effects. With this technique, we analyzed the disordered two-dimensional Mott transition, using Quantum Monte Carlo to solve the associated single-impurity problems. We found spinodal lines at which the metal and insulator cease to be meta-stable. We also studied spatial fluctuations of local quantities, such as the self-energy and the local Green's function, and showed the appearance of metallic regions within the insulator and vice-versa. We carried out an analysis of finite-size effects and showed that, in agreement with the theorems of Imry and Ma, the first-order transition is smeared in the thermodynamic limit. We analyzed transport properties by means of a mapping to a random classical resistor network and calculated both the average current and its distribution across the metal-insulator transition.

cond-mat.str-el↗

arXiv2019

Low-Temperature Dielectric Anomalies at the Mott Insulator-Metal Transition

The correlation-driven Mott transition is commonly characterized by a drop in resistivity across the insulator-metal phase boundary; yet, the complex permittivity provides a deeper insight into the microscopic nature. We investigate the frequency- and temperature-dependent dielectric response of the Mott insulator $κ$-(BEDT-TTF)$_{2}$-Cu$_2$(CN)$_3$ when tuning from a quantum spin liquid into the Fermi-liquid state by applying external pressure and chemical substitution of the donor molecules. At low temperatures the coexistence region at the first-order transition leads to a strong enhancement of the quasi-static dielectric constant $ε_1$ when the effective correlations are tuned through the critical value. Several dynamical regimes are identified around the Mott point and vividly mapped through pronounced permittivity crossovers. All experimental trends are captured by dynamical mean-field theory of the single-band Hubbard model supplemented by percolation theory.

cond-mat.str-el↗

arXiv2018

Low-Energy Excitations in Quantum Spin-Liquids Identified by Optical Spectroscopy

The electrodynamic response of organic spin liquids with highly-frustrated triangular lattices has been measured in a wide energy range. While the overall optical spectra of these Mott insulators are governed by transitions between the Hubbard bands, distinct in-gap excitations can be identified at low temperatures and frequencies which we attribute to the quantum spin liquid state. For the strongly correlated $β^{\prime}$-EtMe$_3$\-Sb\-[Pd(dmit)$_2$]$_2$, we discover enhanced conductivity below $175~{\rm cm}^{-1}$, comparable to the energy of the magnetic coupling $J\approx 250$ K. For $ω\rightarrow 0$ these low-frequency excitations vanish faster than the charge-carrier response subject to Mott-Hubbard correlations, resulting in a dome-shape band peaked at 100~\cm. Possible relations to spinons, magnons and disorder are discussed.

cond-mat.str-el↗

arXiv2017

Multiple crossovers and coherent states in a Mott-Peierls insulator

We consider the dimer Hubbard model within Dynamical Mean Field Theory to study the interplay and competition between Mott and Peierls physics. We describe the various metal-insulator transition lines of the phase diagram and the break down of the different solutions that occur along them. We focus on the specific issue of the debated Mott-Peierls insulator crossover and describe the systematic evolution of the electronic structure across the phase diagram. We found that at low intra-dimer hopping the emerging local magnetic moments can unbind above a characteristic singlet temperature $T^*$. Upon increasing the inter-dimer hopping subtle changes occur in the electronic structure. Notably, we find Hubbard bands of a mix character with coherent and incoherent excitations. We argue that this state is relevant for VO$_2$ and its signatures may be observed in spectroscopic studies, and possibly through pump-probe experiments.

cond-mat.str-el↗

arXiv2017

Quantum Spin Liquids Unveil the Genuine Mott State

The Widom line identifies the locus in the phase diagram where a supercritical gas crosses over from gas-like to a more liquid-like behavior. A similar transition exists in correlated electron liquids, where the interplay of Coulomb repulsion, bandwidth and temperature triggers between the Mott insulating state and an incoherent conduction regime. Here we explore the electrodynamic response of three organic quantum spin liquids with different degrees of effective correlation, where the absence of magnetic order enables unique insight into the nature of the genuine Mott state down to the most relevant low-temperature region. Combining optical spectroscopy with pressure-dependent dc transport and theoretical calculations, we succeeded to construct a phase diagram valid for all Mott insulators on a quantitative scale. In the vicinity of the low-temperature phase boundary, we discover metallic fluctuations within the Mott gap, exhibiting enhanced absorption upon cooling that is not present in antiferromagnetic Mott insulators. Our findings reveal the phase coexistence region and Pomeranchuk-like anomaly of the Mott transition, previously predicted but never observed.

cond-mat.str-el↗

arXiv2017

First-principles-based method for electron localization: Application to monolayer hexagonal boron nitride

We present a first-principles-based many-body typical medium dynamical cluster approximation method for characterizing electron localization in disordered structures. This method applied to monolayer hexagonal boron nitride shows that the presence of a boron vacancies could turn this wide-gap insulator into a correlated metal. Depending on the strength of the electron interactions, these calculations suggest that conduction could be obtained at a boron vacancy concentration as low as $1.0\%$. We also explore the distribution of the local density of states, a fingerprint of spatial variations, which allows localized and delocalized states to be distinguished. The presented method enables the study of disorder-driven insulator-metal transitions not only in $h$-BN but also in other physical materials.

cond-mat.dis-nn↗

arXiv2016

Shock-waves and commutation speed of memristors

Progress of silicon based technology is nearing its physical limit, as minimum feature size of components is reaching a mere 10 nm. The resistive switching behaviour of transition metal oxides and the associated memristor device is emerging as a competitive technology for next generation electronics. Significant progress has already been made in the past decade and devices are beginning to hit the market; however, it has been mainly the result of empirical trial and error. Hence, gaining theoretical insight is of essence. In the present work we report the striking result of a connection between the resistive switching and {\em shock wave} formation, a classic topic of non-linear dynamics. We argue that the profile of oxygen vacancies that migrate during the commutation forms a shock wave that propagates through a highly resistive region of the device. We validate the scenario by means of model simulations and experiments in a manganese-oxide based memristor device. The shock wave scenario brings unprecedented physical insight and enables to rationalize the process of oxygen-vacancy-driven resistive change with direct implications for a key technological aspect -- the commutation speed.

cond-mat.mtrl-sci↗

arXiv2014

Two-stage magnetic-field-tuned superconductor-insulator transition in underdoped La$_{2-x}$Sr$_{x}$CuO$_{4}$

In the underdoped pseudogap regime of cuprate superconductors, the normal state is commonly probed by applying a magnetic field ($H$). However, the nature of the $H$-induced resistive state has been the subject of a long-term debate, and clear evidence for a zero-temperature ($T=0$) $H$-tuned superconductor-insulator transition (SIT) has proved elusive. Here we report magnetoresistance measurements in underdoped La$_{2-x}$Sr$_{x}$CuO$_{4}$, providing striking evidence for quantum critical behavior of the resistivity -- the signature of a $H$-driven SIT. The transition is not direct: it is accompanied by the emergence of an intermediate state, which is a superconductor only at $T=0$. Our finding of a two-stage $H$-driven SIT goes beyond the conventional scenario in which a single quantum critical point separates the superconductor and the insulator in the presence of a perpendicular $H$. Similar two-stage $H$-driven SIT, in which both disorder and quantum phase fluctuations play an important role, may also be expected in other copper-oxide high-temperature superconductors.

cond-mat.supr-con↗

arXiv2013

Topological phase transitions driven by magnetic phase transitions in FexBi2Te3 (0 < x < 0.1) single crystals

We propose a phase diagram for FexBi2Te3 (0 < x < 0.1) single crystals, which belong to a class of magnetically bulk-doped topological insulators. The evolution of magnetic correlations from ferromagnetic- to antiferromagnetic- gives rise to topological phase transitions, where the paramagnetic topological insulator of Bi2Te3 turns into a band insulator with ferromagnetic-cluster glassy behaviours around x ~ 0.025, and it further evolves to a topological insulator with valence-bond glassy behaviours, which spans over the region between x ~ 0.03 up to x ~ 0.1. This phase diagram is verified by measuring magnetization, magnetotransport, and angle-resolved photoemission spectra with theoretical discussions.

cond-mat.str-el↗

arXiv2011

Nearly frozen Coulomb Liquids

We show that very long range repulsive interactions of a generalized Coulomb-like form $V(R)\sim R^{-α}$, with $α<d$ ($d$-dimensionality), typically introduce very strong frustration, resulting in extreme fragility of the charge-ordered state. An \textquotedbl{}almost frozen\textquotedbl{} liquid then survives in a broad dynamical range above the (very low) melting temperature $T_{c}$ which is proportional to $α$. This \textquotedbl{}pseudogap\textquotedbl{} phase is characterized by unusual insulating-like, but very weakly temperature dependent transport, similar to experimental findings in certain low carrier density systems.

cond-mat.str-el↗

arXiv2011

Quantum Critical Transport Near the Mott Transition

We perform a systematic study of incoherent transport in the high temperature crossover region of the half-filled one-band Hubbard model. We demonstrate that the family of resistivity curves displays characteristic quantum critical scaling of the form $ρ(δU,T)=ρ_{c}(T)f(T/T_{o}(δU))$, with $T_{o}(δU)\simδU^{zν}$, and $ρ_{c}(T)\sim T$. The corresponding $β$-function displays a "strong coupling" form $β\sim\ln(ρ_{c}/ρ)$, reflecting the peculiar mirror symmetry of the scaling curves. This behavior, which is surprisingly similar to some experimental findings, indicates that Mott quantum criticality may be acting as the fundamental mechanism behind the unusual transport phenomena in many systems near the metal-insulator transition.

cond-mat.str-el↗

arXiv2010

Characterizing Complex Particle Morphologies Through Shape Matching: Descriptors, Applications, and Algorithms

Many standard structural quantities, such as order parameters and correlation functions, exist for common condensed matter systems, such as spherical and rod-like particles. However, these structural quantities are often insufficient for characterizing the unique and highly complex structures often encountered in the emerging field of nano and microscale self-assembly, or other disciplines involving complex structures such as computational biology. Computer science algorithms known as "shape matching" methods pose a unique solution to this problem by providing robust metrics for quantifying the similarity between pairs of arbitrarily complex structures. This pairwise matching operation, either implicitly or explicitly, lies at the heart of most standard structural characterization schemes for particle systems. By substituting more robust "shape descriptors" into these schemes we extend their applicability to structures formed from more complex building blocks. Here, we describe several structural characterization schemes and shape descriptors that can be used to obtain various types of structural information about particle systems. We demonstrate the application of shape matching algorithms to a variety of example problems, for topics including local and global structure identification and classification, automated phase diagram mapping, and the construction of spatial and temporal correlation functions. The methods are applicable to a wide range of systems, both simulated and experimental, provided particle positions are known or can be accurately imaged.

cond-mat.soft↗