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V. F. Gantmakher

Publications and source records attributed to V. F. Gantmakher.

14 recordsLinked to original sources

Mooij Rule and Weak Localization

It has been shown that the observed correlation between the resistivity $ρ$ of high-resistive metallic alloys and the sign of the temperature derivative $dρ/dT$ can be explained by taking into account the weak localization. This correlation is known as Mooij rule: the derivative $dρ/dT$ is negative for alloys with resistivity in the range of $300\div150\,μΩ\cdot$cm, which corresponds to the electron mean free path about the interatomic distance; however, this derivative is positive for alloys with lower resistivity.

cond-mat.str-el↗

Localized superconductive pairs

Different physical phenomena are discussed which should help to comprehend and interpret the concept of localized superconductive pairs; these include behavior of highly resistive granular materials with superconducting grains, parity effect and the Berezinskii--Kosterlitz--Thouless transition. Experimental arguments in support of localized pairs existence are presented and conditions which promote their appearance are analyzed.

cond-mat.supr-con↗

Superconductor-insulator quantum phase transition

The current understanding of the superconductor-insulator transition is discussed level by level in a cyclic spiral-like manner. At the first level, physical phenomena and processes are discussed which, while of no formal relevance to the topic of transitions, are important for their implementation and observation; these include superconductivity in low electron density materials, transport and magnetoresistance in superconducting island films and in highly resistive granular materials with superconducting grains, and the Berezinskii-Kosterlitz-Thouless transition. The second level discusses and summarizes results from various microscopic approaches to the problem, whether based on the Bardeen-Cooper-Schrieffer theory (the disorder-induced reduction in the superconducting transition temperature; the key role of Coulomb blockade in high-resistance granular superconductors; superconducting fluctuations in a strong magnetic field) or on the theory of the Bose-Einstein condensation. A special discussion is given to phenomenological scaling theories. Experimental investigations, primarily transport measurements, make the contents of the third level and are for convenience classified by the type of material used (ultrathin films, variable composition materials, high-temperature superconductors, superconductor-poor metal transitions). As a separate topic, data on nonlinear phenomena near the superconductor-insulator transition are presented. At the final, summarizing, level the basic aspects of the problem are enumerated again to identify where further research is needed and how this research can be carried out. Some relatively new results, potentially of key importance in resolving the remaining problems, are also discussed.

cond-mat.supr-con↗

Localized - delocalized electron quantum phase transitions

Metal--insulator transitions and transitions between different quantum Hall liquids are used to describe the physical ideas forming the basis of quantum phase transitions and the methods of application of theoretical results in processing experimental data. The following two theoretical schemes are discussed and compared: the general theory of quantum phase transitions, which has been developed according to the theory of thermodynamic phase transitions and relies on the concept of a partition function, and a theory which is based on a scaling hypothesis and the renormalization-group concept borrowed from quantum electrodynamics, with the results formulated in terms of flow diagrams.

cond-mat.dis-nn↗

Suppression of 2D superconductivity by the magnetic field: quantum corrections vs superconductor-insulator transition

Magnetotransport of superconducting Nd_{2-x}Ce_xCuO_{4+y} (NdCeCuO) films is studied in the temperature interval 0.3-30 K. The microscopic theory of the quantum corrections to conductivity, both in the Cooper and in the diffusion channels, qualitatively describes the main features of the experiment including the negative magnetoresistance in the high field limit. Comparison with the model of the field-induced superconductor-insulator transition (SIT) is included and a crossover between these two theoretical approaches is discussed.

cond-mat.str-el↗

Chemical localization

Analysis of experimental data shows that the metal--insulator transition is possible in materials composed of atoms of only metallic elements. Such a transition may occur in spite of the high concentration of valence electrons. It requires stable atomic configurations to act as deep potential traps absorbing dozens of valence electrons. This means in essence that bulk metallic space transforms into an assembly of identical quantum dots. Depending on the parameters, such a material either does contain delocalized electrons (metal) or does not contain such electrons (insulator). The degree of disorder is one of these parameters. Two types of substances with such properties are discussed: liquid binary alloys with both components being metallic, and thermodynamically stable quasicrystals.

cond-mat.dis-nn↗

Width of the Zero-Field Superconducting Resistive Transition in the Vicinity of the Localization Threshold

Resistive superconducting zero-field transition in amorphous In-O films in states from the vicinity of the insulator-superconductor transition is analyzed in terms of two characteristic temperatures: the upper one, $T_{c0}$, where the finite amplitude of the order parameter is established and the lower one, $T_c$, where the phase ordering takes place. It follows from the magnetoresistance measurements that the resistance in between, $T_c<T<T_{c0}$, cannot be ascribed to dissipation by thermally dissociated vortex pairs. So, it is not Kosterlitz-Thouless-Berezinskii transition that happens at $T_c$.

cond-mat.supr-con↗

Temperature Dependence of Upper Critical Field as an Indicator of Boson Effects in Superconductivity in NdCeCuO

The temperature dependence of upper critical field B_c2 was determined from the shift of resistive transition ΔT(B) in nearly optimally doped Nd_{2-x}Ce_xCuO_{4-y} single crystals. Within the experimental accuracy, the weak-field data are described by power function B_c2 ~ (ΔT)^{3/2}. This result is compared with the data on heat capacity and analyzed in the context of possible manifestations of boson effects in superconductivity. The temperature dependence of B_c2 persists down to the lowest temperatures, but the numerical values of B_c2 below 1 K are different for different samples.

cond-mat.supr-con↗

Observation of the parallel-magnetic-field-induced superconductor-insulator transition in thin amorphous InO films

We study the response of a thin superconducting amorphous InO film with variable oxygen content to a parallel magnetic field. A field-induced superconductor-insulator transition (SIT) is observed that is very similar to the one in normal magnetic fields. As the boson-vortex duality, which is the key-stone of the theory of the field-induced SIT, is obviously absent in the parallel configuration, we have to draw conclusion about the theory insufficiency.

cond-mat.str-el↗

Scaling analysis of the magnetic-field-tuned quantum transition in superconducting amorphous In-O films

We have studied the magnetic-field-tuned superconductor-insulator quantum transition (SIT) in amorphous In-O films with different oxygen content and, hence, different electron density. While for states of the film near the zero-field SIT the two-dimensional scaling behaviour is confirmed, for deeper states in the superconducting phase the SIT scenario changes: in addition to the scaling function that describes the conductivity of fluctuation-induced Cooper pairs, there emerges a temperature-dependent contribution to the film resistance. This contribution can originate from the conductivity of normal electrons.

cond-mat.supr-con↗

Resistive Transition and Upper Critical Field in Underdoped YBa_2Cu_3O_{6+x} Single Crystals

A superconducting transition in the temperature dependence of the ab-plane resistivity of underdoped YBa_2Cu_3O_{6+x} crystals in the range T_c<30 K has been investigated. Unlike the case of samples with the optimal level of doping, the transition width increased insignificantly with magnetic field, and in the range T_c<13 K it decreased with increasing magnetic field. The transition point T_c(B) was determined by analyzing the fluctuation conductivity. The curves of B_{c2}(T) measured in the region T/T_c>0.1 did not show a tendency to saturation and had a positive second derivative everywhere, including the immediate neighborhood of T_c. The only difference among the curves of B_{c2}(T) for different crystal states is the scales of T and B, so they can be described in terms of a universal function, which fairly closely follows Alexandrov's model of boson superconductivity.

cond-mat.supr-con↗

Low-temperature resistivity of single crystals YBa_2Cu_3O_{6+x} in the normal state

A scan of the superconductor -- nonsuperconductor transformation in single crystals YBa_2Cu_3O_{6+x} (x about 0.37) was done in two alternative ways, namely, by applying the magnetic field and by reducing the hole concentration through the oxygen rearrangement. The in-plane normal-state resistivity ρ_{ab} obtained in both cases was quite similar; its temperature dependence can be fitted by logarithmic law in the temperature range of almost two decades. However, a different representation of the σ_{ab}=1/ρ_{ab} by a power law typical for a 3D-material near a metal -- insulator transition is also plausible. The vertical conductivity σ_c=1/ρ_c followed the power law and neither σ_c(T), nor ρ_c(T) could be fitted by log(T). It follows from the ρ_c measurements that the transformation at T=0 is split into two transitions: superconductor -- normal-metal and normal-metal -- insulator. In our samples, they are distanced in the oxygen content by Δx\approx0.025.

cond-mat.supr-con↗

Destruction of localized electron pairs above the magnetic-field-driven superconductor-insulator transition in amorphous InO films

We have investigated the field-induced superconductivity-destroying quantum transition in amorphous indium oxide films at low temperatures down to 30 mK. It has been found that, on the high-field side of the transition, the magnetoresistance reaches a maximum and the phase can be insulating as well as metallic. With further increasing magnetic field the film resistance drops and approaches in the high-field limit the resistance value at transition point so that at high fields the metallic phase occurs for both cases. We give a qualitative account of this behavior in terms of field-induced destruction of localized electron pairs.

cond-mat.str-el↗

Resistance behavior near the magnetic-field-tuned quantum transition in superconducting amorphous In-O films

We have studied the magnetic-field-tuned superconductivity destroying quantum transition in amorphous In-O films with the onset of superconductivity in zero field at about 2 K. At temperatures down to 30 mK the critical resistance R_c=R(T,B_c) has been found to change approximately linearly with temperature, which is in contradiction to a standard description where zero slope dR_c/dT = 0 is assumed near T=0. To make the data R(T,B) collapse in the vicinity of transition against scaling variable (B-B_c)/T^{1/y}, one has either to allow for the intrinsic temperature dependence of R_c or to postulate the critical field B_c to be temperature-dependent B_c(T)-B_c(0)~T^{1+1/y}. We find that the state on the high-field side of the transition can be both insulating and metallic and we determine the critical index y=1.2.

cond-mat.str-el↗