arXiv subjects

V. Gopalan

Publications and source records attributed to V. Gopalan.

11 recordsLinked to original sources

arXiv2026

Polar-vortex-driven interfacial strain coupling in PbTiO3/SrRuO3 Heterostructures

Interfacial coupling in oxide heterostructures is a central problem in condensed-matter physics, as it typically emerges at the atomic scale through local interactions mediated by lattice polarization and strain. In this work, we investigate nanoscale polar-supertexture-driven interfacial strain coupling in (PbTiO3)16/(SrRuO3)9/(PbTiO3)16 heterostructures grown on DyScO3(110) substrates. Under appropriate epitaxial strain conditions, the PbTiO3 layers form polar vortex superstructures with a periodicity of approximately 10 nm. We demonstrate that the resulting in-plane nanoscale strain modulation propagates into the SrRuO3 layer. Using element-specific resonant X-ray reflectivity, we probe the nanoscale strain modulations of the strontium and ruthenium sublattices at the interface, revealing strong interfacial strain coupling between the ferroelectric and ferromagnetic layers. These findings provide new insights into engineering nanoscale magnetic modulations through interfacial strain and polarization control.

cond-mat.mtrl-sci↗

arXiv2024

Shape-Optimized Electrooptic Beam Scanners: Experiment

A new horn-shaped electrooptic scanner is described with significantly improved scanning sensitivity over rectangular-shaped devices. In the new device, the shape of the scanner is chosen to follow the trajectory of the beam. An example design is described that exhibits a factor of two larger scanning sensitivity than a rectangular device with comparable maximum scanning angle. Beam propagation simulations and measurements on an experimental device verify the scanner performance.

cs.NI↗

arXiv2024

Hidden domain boundary dynamics towards crystalline perfection

A central paradigm of non-equilibrium physics concerns the dynamics of heterogeneity and disorder, impacting processes ranging from the behavior of glasses to the emergent functionality of active matter. Understanding these complex mesoscopic systems requires probing the microscopic trajectories associated with irreversible processes, the role of fluctuations and entropy growth, and the timescales on which non-equilibrium responses are ultimately maintained. Approaches that illuminate these processes in model systems may enable a more general understanding of other heterogeneous non-equilibrium phenomena, and potentially define ultimate speed and energy cost limits for information processing technologies. Here, we apply ultrafast single shot x-ray photon correlation spectroscopy to resolve the non-equilibrium, heterogeneous, and irreversible mesoscale dynamics during a light-induced phase transition. This approach defines a new way of capturing the nucleation of the induced phase, the formation of transient mesoscale defects at the boundaries of the nuclei, and the eventual annihilation of these defects, even in systems with complex polarization topologies. A non-equilibrium response spanning >10 orders of magnitude in timescales is observed, with multistep behavior similar to the plateaus observed in supercooled liquids and glasses. We show how the observed time-dependent long-time correlations can be understood in terms of the stochastic dynamics of domain walls, encoded in effective waiting-time distributions with power-law tails. This work defines new possibilities for probing the non-equilibrium and correlated dynamics of disordered and heterogeneous media.

cond-mat.mtrl-sci↗

arXiv2021

In-plane quasi-single-domain BaTiO$_3$ via interfacial symmetry engineering

The control of the in-plane domain evolution in ferroelectric thin films is not only critical to understanding ferroelectric phenomena but also to enabling functional device fabrication. However, in-plane polarized ferroelectric thin films typically exhibit complicated multi-domain states, not desirable for optoelectronic device performance. Here we report a strategy combining interfacial symmetry engineering and anisotropic strain to design single-domain, in-plane polarized ferroelectric BaTiO$_3$ thin films. Theoretical calculations predict the key role of the BaTiO$_3$ / PrScO$_3$ (110)$_O$ substrate interfacial environment, where anisotropic strain, monoclinic distortions, and interfacial electrostatic potential stabilize a single-variant spontaneous polarization. A combination of scanning transmission electron microscopy, piezoresponse force microscopy, ferroelectric hysteresis loop measurements, and second harmonic generation measurements directly reveals the stabilization of the in-plane quasi-single-domain polarization state. This work offers design principles for engineering in-plane domains of ferroelectric oxide thin films, which is a prerequisite for high performance optoelectronic devices.

cond-mat.mtrl-sci↗

arXiv2020

Spin-valley locking, bulk quantum Hall effect and chiral surface state in a noncentrosymmetric Dirac semimetal BaMnSb$_2$

Spin-valley locking in the band structure of monolayers of MoS$_2$ and other group-VI dichalcogenides has attracted enormous interest, since it offers potential for valleytronic and optoelectronic applications. Such an exotic electronic state has sparsely been seen in bulk materials. Here, we report spin-valley locking in a bulk Dirac semimetal BaMnSb$_2$. We find valley and spin are inherently coupled for both valence and conduction bands in this material. This is revealed by comprehensive studies using first principle calculations, tight-binding and effective model analyses, angle-resolved photoemission spectroscopy and quantum transport measurements. Moreover, this material also exhibits a stacked quantum Hall effect. The spin-valley degeneracy extracted from the plateau height of quantized Hall resistivity is close to 2. This result, together with the observed Landau level spin splitting, further confirms the spin-valley locking picture. In the extreme quantum limit, we have also observed a two-dimensional chiral metal at the side surface, which represents a novel topological quantum liquid. These findings establish BaMnSb$_2$ as a rare platform for exploring coupled spin and valley physics in bulk single crystals and accessing 3D interacting topological states.

cond-mat.mtrl-sci↗

arXiv2020

Evidence for a magnetic-field induced ideal type-II Weyl state in antiferromagnetic topological insulator Mn(Bi1-xSbx)2Te4

The discovery of Weyl semimetals (WSMs) has fueled tremendous interest in condensed matter physics. WSMs require breaking of either inversion symmetry (IS) or time-reversal symmetry (TRS); they can be categorized into type-I and type-II WSMs, characterized by un-tilted and strongly tilted Weyl cones respectively. Type-I WSMs with breaking of IS or TRS and type-II WSMs with IS breaking have been realized experimentally, but TRS-breaking type-II WSM still remains elusive. In this article, we report an ideal TRS-breaking type-II WSM with only one pair of Weyl nodes observed in the antiferromagnetic topological insulator Mn(Bi1-xSbx)2Te4 under magnetic fields. This state is manifested by a large intrinsic anomalous Hall effect, a non-trivial $\mathrm{π}$ Berry phase of the cyclotron orbit and a large positive magnetoresistance in the ferromagnetic phase at an optimal sample composition. Our results establish a promising platform for exploring the physics underlying the long-sought, ideal TRS breaking type-II WSM.

cond-mat.mtrl-sci↗

arXiv2010

Local Probing of Mesoscopic Physics of Ferroelectric Domain Walls

Domain wall dynamics in ferroic materials underpins functionality of data storage and information technology devices. Using localized electric field of a scanning probe microscopy tip, we experimentally demonstrate a surprisingly rich range of polarization reversal behaviors in the vicinity of the initially flat 180°ferroelectric domain wall. The nucleation bias is found to increase by an order of magnitude from a 2D nucleus at the wall to 3D nucleus in the bulk. The wall is thus significantly ferroelectrically softer than the bulk. The wall profoundly affects switching on length scales of the order of micrometers. The mechanism of correlated switching is analyzed using analytical theory and phase-field modeling. The long-range effect is ascribed to wall bending under the influence of a tip bias well below the bulk nucleation field and placed many micrometers away from the wall. These studies provide an experimental link between the macroscopic and mesoscopic physics of domain walls and atomistic models of nucleation.

cond-mat.mtrl-sci↗

arXiv2009

Coexistence of Weak Ferromagnetism and Ferroelectricity in the High Pressure LiNbO3-type Phase of FeTiO3

We report the magnetic and electrical characteristics of a polycrystalline specimen of FeTiO3 synthesized at high pressure that is isostructural with acentric LiNbO3 (LBO). Piezoresponse force microscopy, optical second harmonic generation, and magnetometry demonstrate that FeTiO3-II is ferroelectric at and below room temperature and weakly ferromagnetic below ~120 K. These results validate symmetry-based materials design criteria and first principles calculations of coexistence between ferroelectricity and weak ferromagnetism in a series of transition metal titanates crystallizing in the LBO structure. The high-pressure form of FeTiO3 stands out as a rare example of a ferroelectric exhibiting weak ferromagnetism generated by a Dzyaloshinskii-Moriya interaction.

cond-mat.mtrl-sci↗

arXiv2009

Spin-Charge-Lattice Coupling through Resonant Multi-Magnon Excitations in Multiferroic BiFeO3

Spin-charge-lattice coupling mediated by multi-magnon processes is demonstrated in multiferroic BiFeO3. Experimental evidence of two and three magnons excitations as well as multimagnon coupling at electronic energy scales and high temperatures are reported. Temperature dependent Raman experiments show up to five resonant enhancements of the 2-magnon excitation below the Neel temperature. These are shown to be collective interactions between on-site Fe d-d electronic resonance, phonons and multimagnons

cond-mat.other↗

arXiv2008

The Interaction of an 180 degree Ferroelectric Domain Wall with a Biased Scanning Probe Microscopy Tip: Effective Wall Geometry and Thermodynamics in Ginzburg-Landau-Devonshire Theory

The interaction of ferroelectric 180 degree domain wall with a strongly inhomogeneous electric field of biased Scanning Probe Microscope tip is analyzed within continuous Landau-Ginzburg-Devonshire theory. Equilibrium shape of the initially flat domain wall boundary bends, attracts or repulses from the probe apex, depending on the sign and value of the applied bias. For large tip-wall separations, the probe-induced domain nucleation is possible. The approximate analytical expressions for the polarization distribution are derived using direct variational method. The expressions provide insight how the equilibrium polarization distribution depends on the wall finite-width, correlation and depolarization effects, electrostatic potential distribution of the probe and ferroelectric material parameters.

cond-mat.mtrl-sci↗

arXiv2006

Multiferroic Domain Dynamics in Strained Strontium Titanate

Multiferroicity can be induced in strontium titanate by applying biaxial strain, resulting in the coexistence of both ferroelectric and antiferrodistortive domains. The magnitude and sign of the strain imposed on the lattice by design can be used to tune the phase transitions and interactions between these two phenomena. Using optical second harmonic generation, we report a transition from centrosymmetric 4/mmm phase to ferroelectric mm2, followed by an antiferrodistortive transition to a coupled ferroelastic-ferroelectric mm2 phase in a strontium titanate thin film strained in biaxial tension by 0.94%. The results agree well with theoretical first principles and phase-field predictions. Direct imaging of domains arising from the ferroelectric phase transition, and its switching under electric fields is demonstrated using piezoelectric force microscopy. Nonlinear optics combined with phase-field modeling is used to show that the dominant multiferroic domain switching mechanism is through coupled 90 degree ferroelectric-ferroelastic domain wall motion. More broadly, these studies of coexisting ferroelectric (polar) and antiferrodistortive rotation (axial) phenomena could have relevance to multiferroics with coexisting ferroelectric (polar) and magnetic (axial) phenomena.

cond-mat.mtrl-sci↗