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V. I. Kozub

Publications and source records attributed to V. I. Kozub.

40 records · Page 3Linked to original sources

Fluctuation-Stimulated Variable-Range Hopping

Qualitatively new transport mechanism is suggested for hopping of carriers according to which the variable-range hopping (VRH) arises from the resonant tunneling between transport states brought into resonance by Coulomb potentials produced by surrounding sites with fluctuating occupations. A semiquantitative description of the hopping transport is given based on the assumption that fluctuations of energies of hopping sites have spectral density 1/f.

cond-mat.dis-nn↗

Nanoconstriction Microscopy of the Giant Magnetoresistance in Cobalt/Copper Spin Valves

We use nanometer-sized point contacts to a Co/Cu spin valve to study the giant magnetoresistance (GMR) of only a few Co domains. The measured data show strong device-to-device differences of the GMR curve, which we attribute to the absence of averaging over many domains. The GMR ratio decreases with increasing bias current. For one particular device, this is accompanied by the development of two distinct GMR plateaus, the plateau level depending on bias polarity and sweep direction of the magnetic field. We attribute the observed behavior to current-induced changes of the magnetization, involving spin transfer due to incoherent emission of magnons and self-field effects.

cond-mat.mes-hall↗

Fluctuator in disordered metallic point contacts: a simulation approach

Electron transport through amorphous monatomic metallic structures generated earlier by molecular dynamics simulations is studied numerically. The interference of electronic trajectories backscattered by the structural disorder probes the multistable structural relaxations responsible for low-frequency noise in real metallic contacts. The structure of these modes is visualized; the dependence of noise magnitude on size and structure of the modes is studied. The transition from multistable behaviour to a more complex one is observed for temperatures far below the melting temperature. The current fluctuations observed numerically resemble the complex behaviour reported earlier for current noise in small metallic structures at moderate temperatures.

cond-mat.dis-nn↗

Zero-bias anomalies of point contact resistance due to adiabatic electron renormalization of dynamical defects

We study effect of the adiabatic electron renormalization on the parameters of the dynamical defects in the ballistic metallic point contact. The upper energy states of the ``dressed'' defect are shown to give a smaller contribution to a resistance of the contact than the lower energy ones. This holds both for the "classical" renormalization related to defect coupling with average local electron density and for the "mesoscopic" renormalization caused by the mesoscopic fluctuations of electronic density the dynamical defects are coupled with. In the case of mesoscopic renormalization one may treat the dynamical defect as coupled with Friedel oscillations originated by the other defects, both static and mobile. Such coupling lifts the energy degeneracy of the states of the dynamical defects giving different mesoscopic contribution to resistance, and provides a new model for the fluctuator as for the object originated by the electronic mesoscopic disorder rather than by the structural one. The correlation between the defect energy and the defect contribution to the resistance leads to zero-temperature and zero-bias anomalies of the point contact resistance. A comparison of these anomalies with those predicted by the Two Channel Kondo Model (TCKM) is made. It is shown, that although the proposed model is based on a completely different from TCKM physical background, it leads to a zero-bias anomalies of the point contact resistance, which are qualitatively similar to TCKM predictions.

cond-mat.str-el↗