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V. Ivády

Publications and source records attributed to V. Ivády.

2 recordsLinked to original sources

Coherent dynamics of multi-spin $\rm V_B^-$ centers in hexagonal boron nitride

Hexagonal boron nitride (hBN) has recently been demonstrated to contain optically polarized and detected electron spins that can be utilized for implementing qubits and quantum sensors in nanolayered-devices. Understanding the coherent dynamics of microwave driven spins in hBN is of crucial importance for advancing these emerging new technologies. Here, we demonstrate and study the Rabi oscillation and related dynamical phenomena of the negatively charged boron vacancy ($\rm V_B^-$) spins in hBN. We report on different dynamics of the $\rm V_B^-$ spins at weak and strong magnetic fields. In the former case the defect behaves like a single electron spin system, while in the latter case it behaves like a multi-spin system exhibiting the multiple-frequency dynamical oscillation like clear beat in Ramsey fringes. We also carry out theoretical simulations for the spin dynamics of $\rm V_B^-$ and reveal that the nuclear spins can be driven via the strong electric-nuclear coupling existing in $\rm V_B^-$ center, which can be modulated by the magnetic field and microwave field.

quant-ph

The role of screening in the density functional applied on transition metal defects in semiconductors

We study selected transition metal related point defects in silicon and silicon carbide semiconductors by a range separated hybrid density functional (HSE06). We find that HSE06 does not fulfill the generalized Koopmans' Theorem for every defect which is due to the self-interaction error in the functional in such cases. Restoring the so-called generalized Koopmans' Condition with a simple correction in the functional can eliminate this error, and brings the calculated charge transition levels remarkably close to the experimental data as well as to the calculated quasi-particle levels from many-body perturbation theory.

cond-mat.mtrl-sci