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V. K. Sahu

Publications and source records attributed to V. K. Sahu.

3 recordsLinked to original sources

Magnetic properties of a quasi-two-dimensional spin-1/2 antiferromagnet Y2CuGe4O12

Competing magnetic interactions and frustration-induced quantum fluctuations in spatially anisotropic low-dimensional magnets often give rise to exotic magnetic phenomena, including field-induced phases. Here, we present crystal structure, magnetic susceptibility, specific heat, and electron spin resonance (ESR) measurements on polycrystalline Y$2$CuGe$4$O${12}$, supported by density functional theory (DFT) calculations. In this compound, the Cu$^{2+}$ ions form a distorted triangular lattice with competing intraplanar ferromagnetic ($J_1 \approx 0.138$ K and $J_2 \approx 0.01$ K) and antiferromagnetic ($J_3 \approx -3.22$ K) exchange interactions, together with a weaker interplanar antiferromagnetic coupling ($J_4 \approx -1.56$ K). These interactions account for the small Curie--Weiss temperature, $θ{\rm CW}=-1.8$ K. Despite the dominant antiferromagnetic interactions, no signature of long-range magnetic ordering is observed down to 0.4 K. Instead, broad maxima in both the magnetic susceptibility and magnetic specific heat reveal the development of short-range spin correlations, further supported by the critical ESR linewidth broadening characteristic of low-dimensional frustrated magnets. Application of an external magnetic field progressively suppresses the broad maximum in the magnetic specific heat, reflecting competition between the Zeeman and exchange energy scales, and drives the system into a field-polarized state above the saturation field, $μ_0H_{\rm s}=2.6$ T. In this regime, the magnetic specific heat exhibits an exponential temperature dependence, consistent with gapped magnon excitations. These results establish Y$_2$CuGe$4$O${12}$ as a rare distorted triangular-lattice magnet in which further-neighbor exchange interactions dominate the magnetic behavior, providing a promising platform for exploring frustration-driven quantum phenomena.

cond-mat.str-el

Ultrafast Self-powered Visible Blind UV Photodetectors based on MgZnO Vertical Schottky Junction in Crossbar Geometry

In order to achieve ultrafast response in MgZnO based self-powered Schottky type photodetectors, it is crucial to decrease both the junction capacitance and carrier transit time. To meet these criteria, Au/MgZnO/ITO Schottky junction photodetectors have been realised in crossbar pattern, wherein the thickness of the MgZnO thin film deposited on patterned ITO-glass substrate is ~ 200 nm and the cross-sectional area of the devices is 0.032 mm2. The semi-transparent 10 nm Au electrode on top of the MgZnO film serves as the Schottky electrode through which light enters the devices. The vertical geometry of the crossbar pattern and the associated small device cross-section results in a low junction capacitance of the devices of ~ 27 pF at zero bias, which in turn produces very fast visible blind self-powered ultraviolet (UV) photoresponse with both the rise and fall times of ~ 1.5 microsecond. The devices also demonstrate a peak responsivity of ~ 49 mA/W at ~ 280 nm with a cut-off wavelength of 336 nm. These Au/MgZnO/ITO Schottky photodetectors in crossbar pattern, with optimized device area, could be useful in applications requiring fast response, such as UV communication and UV imaging.

physics.app-ph

Enhanced energy harvesting from shadow-effect: mechanism and a new device geometry

Energy harvesting from shadow-effect is the generation of electrical power from a Schottky junction when a part of it is kept in shadow and the remaining under illumination. It has been recently invented in Au/n-Si junctions, where modulation of work function of the Au top electrode under contrasting illumination has been invoked to explain the effect. In this paper, a different physical mechanism for energy harvesting from shadow-effect in a Schottky junction is proposed that does not assume change in work function of the top electrode under illumination. The device, termed shadow-effect energy generator (SEG), is modelled as two parallel Schottky junction solar cells, one at the shadowed and the other at the illuminated part, connected with each other in a closed loop circuit through the Si substrate and the top electrode. To test the proposed mechanism, ITO/n-Si junction based SEGs have been fabricated. The values of open circuit voltage in the SEGs have been found to be matching with the difference of photovoltages of the two cells corrected for the potential drop across the Si substrate, that validates the proposed mechanism. To further corroborate the mechanism, the conventional SEG geometry has been modified by applying a continuous ohmic coating at the back of the Si substrates that bypasses the resistance of the Si substrate for current flow and results in higher open circuit voltage and short circuit current. Moreover, ITO/n-Si based SEGs have been found to produce higher output power density compared to that reported in Au/n-Si devices in both the conventional and the new geometry. Although the closed loop present in the equivalent circuit of the SEG devices lead to wastage of harvested energy, the ITO/n-Si SEG devices can nevertheless be used as self-powered sensor for light, object and movement detection as well as for producing electricity from contrasting illumination.

physics.app-ph