arXiv subjects

V. Kashcheyevs

Publications and source records attributed to V. Kashcheyevs.

14 recordsLinked to original sources

arXiv2020

Continuous-Variable Tomography of Solitary Electrons

A method for characterising the wave-function of freely-propagating particles would provide a useful tool for developing quantum-information technologies with single electronic excitations. Previous continuous-variable quantum tomography techniques developed to analyse electronic excitations in the energy-time domain have been limited to energies close to the Fermi level. We show that a wideband tomography of single-particle distributions is possible using energy-time filtering and that the Wigner representation of the mixed-state density matrix can be reconstructed for solitary electrons emitted by an on-demand single-electron source. These are highly localised distributions, isolated from the Fermi sea. While we cannot resolve the pure state Wigner function of our excitations due to classical fluctuations, we can partially resolve the chirp and squeezing of the Wigner function imposed by emission conditions and quantify the quantumness of the source. This tomography scheme, when implemented with sufficient experimental resolution, will enable quantum-limited measurements, providing information on electron coherence and entanglement at the individual particle level.

cond-mat.mes-hall↗

arXiv2018

Gigahertz Single-Electron Pumping Mediated by Parasitic States

In quantum metrology, semiconductor single-electron pumps are used to generate accurate electric currents with the ultimate goal of implementing the emerging quantum standard of the ampere. Pumps based on electrostatically defined tunable quantum dots (QDs) have thus far shown the most promising performance in combining fast and accurate charge transfer. However, at frequencies exceeding approximately 1 GHz, the accuracy typically decreases. Recently, hybrid pumps based on QDs coupled to trap states have led to increased transfer rates due to tighter electrostatic confinement. Here, we operate a hybrid electron pump in silicon obtained by coupling a QD to multiple parasitic states, and achieve robust current quantization up to a few gigahertz. We show that the fidelity of the electron capture depends on the sequence in which the parasitic states become available for loading, resulting in distinctive frequency dependent features in the pumped current.

cond-mat.mes-hall↗

arXiv2016

Design and operation of CMOS-compatible electron pumps fabricated with optical lithography

We report CMOS-compatible quantized current sources (electron pumps) fabricated with nanowires (NWs) on 300 mm SOI wafers. Unlike other Al, GaAs or Si based metallic or semiconductor pumps, the fabrication does not rely on electron-beam lithography. The structure consists of two gates in series on the nanowire and the only difference with the SOI nanowire process lies in long (40 nm) nitride spacers. As a result a single, silicided island gets isolated between the gates and transport is dominated by Coulomb blockade at cryogenic temperatures thanks to the small size and therefore capacitance of this island. Operation and performances comparable to devices featuring e-beam lithography is demonstrated in the non-adiabatic pumping regime, with a pumping frequency up to 300 MHz. We also identify and model signatures of charge traps affecting charge pumping in the adiabatic regime. The availability of quantized current references in a process close to the 28FDSOI technology could trigger new applications for these pumps and allow to cointegrate them with cryogenic CMOS circuits, for instance in the emerging field of interfaces with quantum bits.

cond-mat.mes-hall↗

arXiv2015

Measurement and control of electron wave packets from a single-electron source

We report an experimental technique to measure and manipulate the arrival-time and energy distributions of electrons emitted from a semiconductor electron pump, operated as both a single-electron source and a two-electron source. Using an energy-selective detector whose transmission we control on picosecond timescales, we can measure directly the electron arrival-time distribution and we determine the upper-bound to the distribution width to be 30 ps. We study the effects of modifying the shape of the voltage waveform that drives the electron pump, and show that our results can be explained by a tunneling model of the emission mechanism. This information was in turn used to control the emission-time difference and energy gap between a pair of electrons.

cond-mat.mes-hall↗

arXiv2010

Generation of energy selective excitations in quantum Hall edge states

We operate an on-demand source of single electrons in high perpendicular magnetic fields up to 30T, corresponding to a filling factor below 1/3. The device extracts and emits single charges at a tunable energy from and to a two-dimensional electron gas, brought into well defined integer and fractional quantum Hall (QH) states. It can therefore be used for sensitive electrical transport studies, e.g. of excitations and relaxation processes in QH edge states.

cond-mat.mes-hall↗

arXiv2010

Constructive role of non-adiabaticity for quantized charge pumping

We investigate a recently developed scheme for quantized charge pumping based on single-parameter modulation. The device was realized in an AlGaAl-GaAs gated nanowire. It has been shown theoretically that non-adiabaticity is fundamentally required to realize single-parameter pumping, while in previous multi-parameter pumping schemes it caused unwanted and less controllable currents. In this paper we demonstrate experimentally the constructive and destructive role of non-adiabaticity by analysing the pumping current over a broad frequency range.

cond-mat.mes-hall↗

arXiv2009

A quantum criticality perspective on the charging of narrow quantum-dot levels

Understanding the charging of exceptionally narrow levels in quantum dots in the presence of interactions remains a challenge within mesoscopic physics. We address this fundamental question in the generic model of a narrow level capacitively coupled to a broad one. Using bosonization we show that for arbitrary capacitive coupling charging can be described by an analogy to the magnetization in the anisotropic Kondo model, featuring a low-energy crossover scale that depends in a power-law fashion on the tunneling amplitude to the level. Explicit analytical expressions for the exponent are derived and confirmed by detailed numerical and functional renormalization-group calculations.

cond-mat.mes-hall↗

arXiv2008

Single-parameter quantized charge pumping in high magnetic fields

We study single-parameter quantized charge pumping via a semiconductor quantum dot in high magnetic fields. The quantum dot is defined between two top gates in an AlGaAs/GaAs heterostructure. Application of an oscillating voltage to one of the gates leads to pumped current plateaus in the gate characteristic, corresponding to controlled transfer of integer multiples of electrons per cycle. In a perpendicular-to-plane magnetic field the plateaus become more pronounced indicating an improved current quantization. Current quantization is sustained up to magnetic fields where full spin polarization of the device can be expected.

cond-mat.mes-hall↗

arXiv2008

Charge pumping in carbon nanotube quantum dots

We investigate charge pumping in carbon nanotube quantum dots driven by the electric field of a surface acoustic wave. We find that at small driving amplitudes, the pumped current reverses polarity as the conductance is tuned through a Coulomb blockade peak using a gate electrode. We study the behavior as a function of wave amplitude, frequency and direction and develop a model in which our results can be understood as resulting from adiabatic charge redistribution between the leads and quantum dots on the nanotube.

cond-mat.mes-hall↗

arXiv2008

Robust single-parameter quantized charge pumping

This paper investigates a scheme for quantized charge pumping based on single-parameter modulation. The device was realized in an AlGaAs-GaAs gated nanowire. We find a remarkable robustness of the quantized regime against variations in the driving signal, which increases with applied rf power. This feature together with its simple configuration makes this device a potential module for a scalable source of quantized current.

cond-mat.mes-hall↗

arXiv2007

Single-parameter non-adiabatic quantized charge pumping

Controlled charge pumping in an AlGaAs/GaAs gated nanowire by single-parameter modulation is studied experimentally and theoretically. Transfer of integral multiples of the elementary charge per modulation cycle is clearly demonstrated. A simple theoretical model shows that such a quantized current can be generated via loading and unloading of a dynamic quasi-bound state. It demonstrates that non-adiabatic blockade of unwanted tunnel events can obliterate the requirement of having at least two phase-shifted periodic signals to realize quantized pumping. The simple configuration without multiple pumping signals might find wide application in metrological experiments and quantum electronics.

cond-mat.mes-hall↗

arXiv2004

Reply to Comment on "Exact analytic solution for the generalized Lyapunov exponent of the 2-dimensional Anderson localization"

We reply to comments by P.Marko$\breve{s}$, L.Schweitzer and M.Weyrauch [preceding paper] on our recent paper [J. Phys.: Condens. Matter 63, 13777 (2002)]. We demonstrate that our quite different viewpoints stem for the different physical assumptions made prior to the choice of the mathematical formalism. The authors of the Comment expect \emph{a priori} to see a single thermodynamic phase while our approach is capable of detecting co-existence of distinct pure phases. The limitations of the transfer matrix techniques for the multi-dimensional Anderson localization problem are discussed.

cond-mat.dis-nn↗

arXiv2002

Exact analytic solution for the generalized Lyapunov exponent of the 2-dimensional Anderson localization

The Anderson localization problem in one and two dimensions is solved analytically via the calculation of the generalized Lyapunov exponents. This is achieved by making use of signal theory. The phase diagram can be analyzed in this way. In the one dimensional case all states are localized for arbitrarily small disorder in agreement with existing theories. In the two dimensional case for larger energies and large disorder all states are localized but for certain energies and small disorder extended and localized states coexist. The phase of delocalized states is marginally stable. We demonstrate that the metal-insulator transition should be interpreted as a first-order phase transition. Consequences for perturbation approaches, the problem of self-averaging quantities and numerical scaling are discussed.

cond-mat↗

arXiv2002

Quantized adiabatic quantum pumping due to interference

Recent theoretical calculations, demonstrating that quantized charge transfer due to adiabatically modulated potentials in mesoscopic devices can result purely from the interference of the electron wave functions (without invoking electron-electron interactions) are reviewed: (1) A new formula is derived for the pumped charge Q (per period); It reproduces the Brouwer formula without a bias, and also yields the effect of the modulating potential on the Landauer formula in the presence of a bias. (2) For a turnstile geometry, with time-dependent gate voltages V_L(t) and V_R(t), the magnitude and sign of Q are determined by the relative position and orientation of the closed contour traversed by the system in the {V_L-V_R} plane, relative to the transmission resonances in that plane. Integer values of Q (in units of e) are achieved when a transmission peak falls inside the contour, and are given by the winding number of the contour. (3) When the modulating potential is due to surface acoustic waves, Q exhibits a staircase structure, with integer values, reminiscent of experimental observations.

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