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V. L. Alperovich

Publications and source records attributed to V. L. Alperovich.

6 recordsLinked to original sources

Electron escape probability in high-efficiency photocathodes measured by reverse-injection photovoltage

The characterization of electron transfer through the emitting surface is of crucial importance for optimizing existing and developing new photocathodes. Here we propose and develop a method for the direct determination of the electron escape probability in high-efficiency semiconductor photocathodes. The proposed method is based on the variations in the surface photovoltage upon the injection of emitted photoelectrons back into a photocathode (``reverse injection"), which is induced by the polarity reversal of the external electric field. We demonstrate the method on \textit{p}-GaN(Cs,O) photocathodes with negative effective electron affinity by measuring the evolution of photoemission quantum efficiency upon the reverse injection of emitted electrons.

cond-mat.mtrl-sci

Elucidating Na$_2$KSb band structure: near-band-gap photoemission spectroscopy and DFT calculations

The electronic band structure of Na$_{2}$KSb was studied by a combination of low-energy photoemission spectroscopy and density functional theory (DFT) calculations. The optical and photoemission quantum efficiency (QE) spectra, along with longitudinal energy distribution curves (EDCs) of multialkali Na$_{2}$KSb(Cs,Sb) photocathodes were measured in the temperature range of 80--295 K. The thresholds of various band-to-band transition in Na$_{2}$KSb were observed in the optical and QE spectra of Na$_{2}$KSb(Cs,Sb) photocathodes. The evolution of EDC derivatives with varying photon energy reveals a fine structure related to the emission of two types of electrons: (i) ballistic electrons, which are excited from heavy hole, light hole and split-off valence bands, and (ii) photoelectrons, that are captured in the side valleys of Na$_{2}$KSb conduction band. The analysis of EDCs and QE spectra allowed us to determine the band structure parameters of Na$_{2}$KSb at $T = 80$ K, including the band gap $E_{\text{g}} = 1.52 \pm 0.02$ eV, spin-orbit splitting $Δ_{\text{SO}} = 0.59 \pm 0.04$ eV and the energy separations between $Γ$ and side valleys of the conduction band: $Δ_{Γ-\text{X}1} = 0.41 \pm 0.05$ eV and $Δ_{Γ-\text{X}2} = 0.65 \pm 0.05$ eV. The experimentally determined band gaps and side valley positions, as well as the energies of the final electronic states of optical transitions are in good agreement with the DFT calculations. The obtained data on the hot electron dynamics and electronic band structure of Na$_{2}$KSb are crucial to improve the understanding of the photoemission processes in this material and will contribute to the development of the robust spin-polarized electron sources with multialkali photocathodes.

cond-mat.mtrl-sci

Subthermal Mean Transverse Energies Induced by Electron Refraction on the Jump in Mass at the Surface of Multialkali Photocathodes

The search for photocathode materials with low mean transverse energies (MTEs) and, hence, low intrinsic emittance is of crucial importance for various fields of particle and solid state physics. Here, we demonstrate that polycrystalline multialkali Na$_{2}$KSb(Cs,Sb) photocathodes with negative effective electron affinity (NEA) have MTE values at room temperature by a factor of 2 lower than those of monocrystalline \textit{p}-GaAs(Cs,O) photocathodes. These low MTE values are due to the electron refraction on the jump in mass, between a small effective mass in Na$_{2}$KSb and free electron mass in vacuum. It is proved that, at the NEA state, up to half of photoelectrons are emitted in a narrow-angle cone with the fractional MTE of 9\,meV at room temperature. We also showed that the transition from NEA to positive effective affinity results in the subthermal total MTE of the Na$_{2}$KSb(Cs,Sb) photocathode, along with quantum efficiency of about 10$^{-2}$. The physical reasons for the manifestation of the refraction effect in multialkali photocathodes are discussed, opening up opportunities for the development of high-brightness and ultracold robust electron sources.

cond-mat.mtrl-sci

Spectral maximum in the terahertz photoconductance of a quantum point contact

The disappearance of the giant terahertz photoconductance of a quantum point contact under the increase in the photon energy, which was discovered experimentally (Otteneder et al., Phys. Rev. Applied 10 (2018) 014015) and studied by the numerical calculations of the photon-stimulated transport (O.A. Tkachenko et al., JETP Lett. 108 (2018) 396), is explained by the momentum conservation upon absorption of photons by tunneling electrons and on the base of perturbation theory calculations.

cond-mat.mes-hall

Spectral maximum in photoconductance of a quantum point contact

A counter-intuitive disappearance of the giant terahertz photoconductance of a quantum point contact (QPC) under increase in the photon energy, which was discovered experimentally (Otteneder et al., Phys. Rev. Applied 10 (2018) 014015) and studied by the numerical calculations of the photon-stimulated transport (O.A. Tkachenko et al., JETP Lett. 108 (2018) 396), is explained here by using qualitative considerations about the momentum conservation upon absorption of terahertz photons. The spectra of photon-stimulated transmission through a smooth one-dimensional barrier are calculated on the basis of the perturbation theory. These calculations also predict the spectral maxima for optical transitions from the Fermi level to the top of the potential barrier. Within the proposed physical picture, the widths of the spectral maxima are estimated, and the evolution of the shape of the spectra with a change in the position of the Fermi level is qualitatively explained.

cond-mat.mes-hall

Magnetically induced spin-dependent photoemission from p-GaAs(Cs,O) into vacuum

A spin-dependent emission of optically oriented electrons from p-GaAs(Cs,O) into vacuum was experimentally observed in a magnetic field normal to the surface. This phenomenon is explained within the model which takes into account the jump in the electron g factor at the semiconductor-vacuum interface. Due to this jump, the effective electron affinity on the semiconductor surface depends on the mutual direction of optically oriented electron spins and the magnetic field, resulting in the spin-dependent photoemission. It is demonstrated that the observed effect can be used for the determination of spin diffusion length in semiconductors.

cond-mat.mes-hall