arXiv subjects

V. Latonova

Publications and source records attributed to V. Latonova.

3 recordsLinked to original sources

arXiv2026

The study of gamma-radiation induced displacement damage in $n^+$-in-$p$ silicon diodes

The bulk damage of $p$-type silicon sensors caused by gamma irradiation with high total ionizing doses has been investigated. The study was carried out on different types of $n^+$-in-$p$ silicon diodes with different oxygen concentrations and silicon bulk resistivities. The Secondary-Ion Mass Spectrometry technique was used to determine the relative concentration of oxygen in the individual samples. The measured diodes were irradiated by a $^{60}$Co gamma source to total ionizing doses ranging from 0.50 up to 8.28 MGy, and annealed for 80 minutes at 60{\deg}C. The main goal of the study was to characterize the gamma-radiation induced displacement damage by measuring IV and CV characteristics, and the evolution of the full depletion voltage with the total ionizing dose. The Transient Current Technique was used to verify the full depletion voltage and to extract the electric field distribution and the sign of the space charge in the silicon diodes irradiated to the lowest and the highest delivered total ionizing doses. The results show a linear increase of the bulk leakage current with the total ionizing dose, with the damage coefficient being dependent on initial resistivity and oxygen concentration of the silicon diode. The effective doping concentration and full depletion voltage decrease significantly with an increasing total ionizing dose, before starting to increase again at a specific dose. We assume that the initial decrease in the effective doping concentration is caused by the effect of acceptor removal. An additional notable finding of this study is that the bulk leakage current and CV characteristics of the gamma-irradiated diodes do not show any evidence of an annealing effect.

hep-ex↗

arXiv2023

Study of Bulk Damage of High Dose Gamma Irradiated p-type Silicon Diodes with Various Resistivities

The bulk damage of p-type silicon detectors caused by high doses of gamma irradiation has been studied. The study was carried out on three types of n$^{+}$-in-p silicon diodes with comparable geometries but different initial resistivities. This allowed to determine how different initial parameters of studied samples influence radiation-induced changes in the measured characteristics. The diodes were irradiated by a Cobalt-60 gamma source to total ionizing doses ranging from 0.50 up to 8.28 MGy, and annealed for 80 minutes at 60 °C. The Geant4 toolkit for simulation of the passage of particles through matter was used to simulate the deposited energy homogeneity, to verify the equal distribution of total deposited energies through all the layers of irradiated samples, and to calculate the secondary electron spectra in the irradiation box. The main goal of the study was to characterize the gamma-radiation induced displacement damage by measuring current-voltage characteristics (IV), and the evolution of the full depletion voltage with the total ionizing dose, by measuring capacitance-voltage characteristics (CV). It has been observed that the bulk leakage current increases linearly with total ionizing dose, and the damage coefficient depends on the initial resistivity of the silicon diode. The effective doping concentration and therefore full depletion voltage significantly decreases with increasing total ionizing dose, before starting to increase again at a specific dose. We assume that this decrease is caused by the effect of acceptor removal. Another noteworthy observation of this study is that the IV and CV measurements of the gamma irradiated diodes do not reveal any annealing effect.

physics.ins-det↗

arXiv2023

Setups for eliminating static charge of the ATLAS18 strip sensors

Construction of the new all-silicon Inner Tracker (ITk), developed by the ATLAS collaboration for the High Luminosity LHC, started in 2020 and is expected to continue till 2028. The ITk detector will include 18,000 highly segmented and radiation hard n+-in-p silicon strip sensors (ATLAS18), which are being manufactured by Hamamatsu Photonics. Mechanical and electrical characteristics of produced sensors are measured upon their delivery at several institutes participating in a complex Quality Control (QC) program. The QC tests performed on each individual sensor check the overall integrity and quality of the sensor. During the QC testing of production ATLAS18 strip sensors, an increased number of sensors that failed the electrical tests was observed. In particular, IV measurements indicated an early breakdown, while large areas containing several tens or hundreds of neighbouring strips with low interstrip isolation were identified by the Full strip tests, and leakage current instabilities were measured in a long-term leakage current stability setup. Moreover, a high surface electrostatic charge reaching a level of several hundreds of volts per inch was measured on a large number of sensors and on the plastic sheets, which mechanically protect these sensors in their paper envelopes. Accumulated data indicates a clear correlation between observed electrical failures and the sensor charge-up. To mitigate the above-described issues, the QC testing sites significantly modified the sensor handling procedures and introduced sensor recovery techniques based on irradiation of the sensor surface with UV light or application of intensive flows of ionized gas. In this presentation, we will describe the setups implemented by the QC testing sites to treat silicon strip sensors affected by static charge and evaluate the effectiveness of these setups in terms of improvement of the sensor performance.

physics.ins-det↗