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V. Osinniy

Publications and source records attributed to V. Osinniy.

2 recordsLinked to original sources
arXiv2006

High ferromagnetic phase transition temperatures in GaMnAs layers annealed under arsenic capping

Thin GaMnAs layers grown by molecular beam epitaxy were subjected to low-temperature post growth annealing, with an amorphous arsenic capping layer deposited on the GaMnAs surface directly after the epitaxial growth. It is shown that the presence of arsenic capping at the GaMnAs surface significantly shortens the post-growth annealing times and facilitates a complete out-diffusion of Mn interstitials from GaMnAs volume.

cond-mat.mtrl-sci↗
arXiv2004

Thermoelectric studies of electronic properties of ferromagnetic GaMnAs layers

Thermoelectric power, electrical conductivity, and high field Hall effect were studied over a broad temperature range in ferromagnetic Ga(1-x)Mn(x)As epitaxial layers (0.015 70 K) the thermoelectric power in GaMnAs linearly increases with increasing temperature. That indicates the presence of a degenerate hole gas with the Fermi energy EF=220+-25 meV, nearly independent of Mn content (for 0.02<x<0.05). At lower temperatures GaMnAs layers with metallic-type conductivity show an additional contribution to the thermoelectric power with the maximum close to the Curie temperature. The layers exhibiting insulating electrical properties show 1/T-type increase of thermoelectric power at low temperatures.

cond-mat.mtrl-sci↗