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V. V. Bel'kov

Publications and source records attributed to V. V. Bel'kov.

At least 19 recordsLinked to original sources

Bleaching of the Terahertz Magneto-Photogalvanic Effect in CdHgTe Crystals with Kane Fermions

We report the observation and comprehensive study of the complex nonlinear intensity dependence of the magneto-photogalvanic effect (MPGE) current induced by terahertz (THz) radiation in Cd$_{x}$Hg$_{1-x}$Te films with inverted ($x = 0.15$) and noninverted ($x = 0.22$) band structures. The nonlinearities are studied for the resonant MPGE caused by cyclotron resonance, interband transitions between Landau levels, and ionization impurities, as well as for nonresonant indirect Drude-like optical transitions. We show that all these processes lead to the saturation of the photocurrent caused by absorption bleaching. We develop a theoretical framework for each mechanism, which describes measured nonlinearities over an intensity range from 10$^{-3}$ to $4\times10^{4}$ W/cm$^2$. Furthermore, we demonstrate that the saturation processes for these absorption channels differ significantly, allowing us to analyze them independently by considering different intensity regimes. The observed nonlinearities enable us to determine the energy relaxation times of Kane fermions excited by CR and interband optical transitions.

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Magnetophotogalvanic Effects Driven by Terahertz Radiation in CdHgTe Crystals with Kane Fermions

We report on the observation and comprehensive study of the terahertz radiation induced magneto-photogalvanic effect (MPGE) in bulk CdHgTe crystals hosting Kane fermions. The MPGE has been detected in Cd$_{x}$Hg$_{1-x}$Te films with Cd contents $x = 0.15$ and $0.22$ subjected to an in-plane magnetic field. At liquid helium temperature we observed multiple resonances in MPGE current upon variation of magnetic field. In the $x = 0.22$ with noninverted band structure, the resonances are caused by cyclotron resonance (CR) and photoionization of an impurity level. In the $x = 0.15$ films with an inverted band structure, they originate from the CR and interband optical transitions. Band structure calculated by the Kane model perfectly describes positions of all resonances. In particularly, the resonant MPGE caused by interband transitions excited by THz radiation is caused by the gapless energy spectrum of Kane fermions realized in materials with certain Cd contents and temperature range. In addition to the resonant MPGE current we detected a nonresonant one due to indirect optical transitions (Drude-like). This contribution has a nonmonotonic magnetic field dependence increasing linearly at low magnetic field $B$, approaching a maximum at moderate field and decreasing at high $B$. While the nonresonant MPGE decreases drastically with increasing temperature, it is well measurable up to room temperature. The developed theory demonstrates that the MPGE current arises due to cubic in momentum spin-dependent terms in the scattering probability. The asymmetry caused by these effects results in a pure spin current which is converted into an electric current due to the Zeeman effect.

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Photocurrents in bulk tellurium

We report a comprehensive study of polarized infrared/terahertz photocurrents in bulk tellurium crystals. We observe different photocurrent contributions and show that, depending on the experimental conditions, they are caused by the trigonal photogalvanic effect, the transverse linear photon drag effect, and the magnetic field induced linear and circular photogalvanic effects. All observed photocurrents have not been reported before and are well explained by the developed phenomenological and microscopic theory. We show that the effects can be unambiguously distinguished by studying the polarization, magnetic field, and radiation frequency dependence of the photocurrent. At frequencies around 30 THz, the photocurrents are shown to be caused by the direct optical transitions between subbands in the valence band. At lower frequencies of 1 to 3 THz, used in our experiment, these transitions become impossible and the detected photocurrents are caused by the indirect optical transitions (Drude-like radiation absorption).

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THz ratchet effect in HgTe interdigitated structures

The emergence of ratchet effects in two-dimensional materials is strongly correlated with the introduction of asymmetry into the system. In general, dual-grating-gate structures forming lateral asymmetric superlattices provide a suitable platform for studying this phenomenon. Here, we report on the observation of ratchet effects in HgTe-based dual-grating-gate structures hosting different band structure properties. Applying polarized terahertz laser radiation we detected linear and polarization independent ratchets, as well as an radiation-helicity driven circular ratchet effect. Studying the ratchet effect in devices made of quantum wells (QWs) of different thickness we observed that the magnitude of the signal substantially increases with decreasing QW width with a maximum value for devices made of QWs of critical thickness hosting Dirac fermions. Furthermore, sweeping the gate voltage amplitude we observed sign-alternating oscillations for gate voltages corresponding to p-type conductivity. The amplitude of the oscillations is more than two orders of magnitude larger than the signal for n-type conducting QWs. The oscillations and the signal enhancement are shown to be caused by the complex valence band structure of HgTe-based QWs. These peculiar features of the ratchet currents make these materials an ideal platform for the development of THz applications.

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Edge photocurrent in bilayer graphene due to inter-Landau-level transitions

We report the observation of the resonant excitation of edge photocurrents in bilayer graphene subjected to terahertz radiation and a magnetic field. The resonantly excited edge photocurrent is observed for both inter-band (at low carrier densities) and intra-band (at high densities) transitions between Landau levels (LL). While the intra-band LL transitions can be traced to the classical cyclotron resonance (CR) and produce strong resonant features, the inter-band-LL resonances have quantum nature and lead to the weaker features in the measured photocurrent spectra. The magnitude and polarization properties of the observed features agree with the semiclassical theory of the intra-band edge photogalvanic effect, including its Shubnikov-de-Haas oscillations at low temperatures.

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Edge photocurrent driven by THz electric field in bi-layer graphene

We report on the observation of edge electric currents excited in bi-layer graphene by terahertz laser radiation. We show that the current generation belongs to the class of second order in electric field phenomena and is controlled by the orientation of the THz electric field polarization plane. Additionally, applying a small magnetic field normal to the graphene plane leads to a phase shift in the polarization dependence. Increasing the magnetic field strength, the current starts to exhibit 1/B-magnetooscillations with a period consistent with that of the Shubnikov-de-Haas effect and amplitude by an order of magnitude larger as compared to the current at zero magnetic field measured under the same conditions. The microscopic theory developed shows that the current is formed in the edges vicinity limited by the mean-free path of carriers and the screening length of the high-frequency electric field. The current originates from the alignment of the free carrier momenta and dynamic accumulation of charge at the edges, where the P-symmetry is naturally broken. The observed magnetooscillations of the photocurrent are attributed to the formation of Landau levels.

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Giant ratchet magneto-photocurrent in graphene lateral superlattices

We report on the observation of the magnetic quantum ratchet effect in graphene with a lateral dual-grating top gate (DGG) superlattice. We show that the THz ratchet current exhibits sign-alternating magneto-oscillations due to the Shubnikov-de Haas effect. The amplitude of these oscillations is greatly enhanced as compared to the ratchet effect at zero magnetic field. The direction of the current is determined by the lateral asymmetry which can be controlled by variation of gate potentials in DGG. We also study the dependence of the ratchet current on the orientation of the terahertz electric field (for linear polarization) and on the radiation helicity (for circular polarization). Notably, in the latter case, switching from right- to left-circularly polarized radiation results in an inversion of the photocurrent direction. We demonstrate that most of our observations can be well fitted by the drift-diffusion approximation based on the Boltzmann kinetic equation with the Landau quantization fully encoded in the oscillations of the density of states.

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Impact ionization induced by terahertz radiation in HgTe quantum wells of critical thickness

We report on the observation of terahertz (THz) radiation induced band-to-band impact ionization in \HgTe quantum well (QW) structures of critical thickness, which are characterized by a nearly linear energy dispersion. The THz electric field drives the carriers initializing electron-hole pair generation. The carrier multiplication is observed for photon energies less than the energy gap under the condition that the product of the radiation angular frequency $ω$ and momentum relaxation time $τ_{\text l}$ larger than unity. In this case, the charge carriers acquire high energies solely because of collisions in the presence of a high-frequency electric field. The developed microscopic theory shows that the probability of the light impact ionization is proportional to $\exp(-E_0^2/E^2)$, with the radiation electric field amplitude $E$ and the characteristic field parameter $E_0$. As observed in experiment, it exhibits a strong frequency dependence for $ωτ\gg 1$ characterized by the characteristic field $E_0$ linearly increasing with the radiation frequency $ω$.

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Terahertz Magnetospectroscopy of Cyclotron Resonances from Topological Surface States in Thick Films of Cd$_x$Hg$_{1-x}$Te

We present studies of the cyclotron resonance (CR) in thick Cd$_x$Hg$_{1-x}$Te films with different cadmium concentrations corresponding to inverted and normal band order, as well as to an almost linear energy dispersion. Our results demonstrate that formation of two-dimensional topological surface states requires sharp interfaces between layers with inverted and normal band order, in which case the corresponding CR is clearly observed for the out-of-plane orientation of magnetic field, but does not show up for an in-plane orientation. By contrast, all samples having more conventional technological design with smooth interfaces (i.e., containing regions of Cd$_x$Hg$_{1-x}$Te with gradually changing Cd content $x$) show equally pronounced CR in both in-plane and out-of-plane magnetic field revealing that CR is excited in three-dimensional states. Modeling of the surface states for different film designs supports our main observations. In all samples, we observe additional broad helicity-independent resonances which are attributed to photo-ionization and magnetic freeze-out of impurity states.

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Symmetry breaking and circular photogalvanic effect in epitaxial Cd$_x$Hg$_{1-x}$Te films

We report on the observation of symmetry breaking and the circular photogalvanic effect in Cd$_x$Hg$_{1-x}$Te alloys. We demonstrate that irradiation of bulk epitaxial films with circularly polarized terahertz radiation leads to the circular photogalvanic effect (CPGE) yielding a photocurrent whose direction reverses upon switching the photon helicity. This effect is forbidden in bulk zinc-blende crystals by symmetry arguments, therefore, its observation indicates either the symmetry reduction of bulk material or that the photocurrent is excited in the topological surface states formed in a material with low Cadmium concentration. We show that the bulk states play a crucial role because the CPGE was also clearly detected in samples with non-inverted band structure. We suggest that strain is a reason of the symmetry reduction. We develop a theory of the CPGE showing that the photocurrent results from the quantum interference of different pathways contributing to the free-carrier absorption (Drude-like) of monochromatic radiation.

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Cyclotron resonance induced photogalvanic effect in surface states of 200 nm thick strained HgTe films

We report on the study of magneto-photogalvanic and magnetotransport phenomena in 200 nm partially strained HgTe films. This thickness is slightly larger than the estimated critical thickness of lattice relaxation leaving the film partially relaxed with the value of the energy gap close to zero. We show that illumination of HgTe films with monochromatic terahertz laser radiation results in a giant resonant photocurrent caused by the cyclotron resonance in the surface states. The resonant photocurrent is also detected in the reference fully strained 80 nm HgTe films previously shown to be fully gapped 3D topological insulators. We show that the resonance positions in both types of films almost coincide demonstrating the existence of topologically protected surface states in thick HgTe films. The conclusion is supported by magnetotransport experiments.

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Sign-alternating photoconductivity and magnetoresistance oscillations induced by terahertz radiation in HgTe quantum wells

We report on the observation of terahertz radiation induced photoconductivity and of terahertz analog of the microwave-induced resistance oscillations (MIRO) in HgTe-based quantum well (QW) structures of different width. The MIRO-like effect has been detected in QWs of 20 nm thickness with inverted band structure and a rather low mobility of about 3 $\times$ 10$^5$ cm$^2$/V s. In a number of other structures with QW widths ranging from 5 to 20 nm and lower mobility we observed an unconventional non-oscillatory photoconductivity signal which changes its sign upon magnetic field increase. This effect was observed in structures characterized by both normal and inverted band ordering, as well as in QWs with critical thickness and linear dispersion. In samples having Hall bar and Corbino geometries an increase of the magnetic field resulted in a single and double change of the sign of the photoresponse, respectively. We show that within the bolometric mechanism of the photoresponse these unusual features imply a non-monotonic behavior of the transport scattering rate, which should decrease (increase) with temperature for magnetic fields below (above) the certain value. This behavior is found to be consistent with the results of dark transport measurements of magnetoresistivity at different sample temperatures. Our experiments demonstrate that photoconductivity is a very sensitive probe of the temperature variations of the transport characteristics, even those that are hardly detectable using standard transport measurements.

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Circular and linear magnetic quantum ratchet effects in dual-grating-gate CdTe-based nanostructures

We report on the observation and systematic study of polarization sensitive magnetic quantum ratchet effects induced by alternating electric fields in the terahertz frequency range. The effects are detected in (Cd,Mn)Te-based quantum well (QW) structures with inter-digitated dual-grating-gate (DGG) lateral superlattices. A dc electric current excited by cw terahertz laser radiation shows 1/B-periodic oscillations with an amplitude much larger than the photocurrent at zero magnetic field. Variation of gate voltages applied to individual grating gates of the DGG enables us to change the degree and the sign of the lateral asymmetry in a controllable way. The data reveal that the photocurrent reflects the degree of lateral asymmetry induced by different gate potentials. We show that the magnetic ratchet photocurrent includes the Seebeck thermoratchet effect as well as the effects of "linear" and "circular" ratchets, which are sensitive to the corresponding polarization of the driving electromagnetic force. Theoretical analysis performed in the framework of semiclassical approach and taking into account Landau quantization describes the experimental results well.

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Magneto-resistance oscillations induced by high-intensity terahertz radiation

We report on observation of pronounced terahertz radiation-induced magneto-resistivity oscillations in AlGaAs/GaAs two-dimensional electron systems, the THz analog of the microwave induced resistivity oscillations (MIRO). Applying high power radiation of a pulsed molecular laser we demonstrate that MIRO, so far observed at low power only, are not destroyed even at very high intensities. Experiments with radiation intensity ranging over five orders of magnitude from $0.1$ W/cm$^2$ to $10^4$ W/cm$^2$ reveal high-power saturation of the MIRO amplitude, which is well described by an empirical fit function $I/(1 + I/I_s)^β$ with $β\sim 1$. The saturation intensity Is is of the order of tens of W/cm$^2$ and increases by six times by increasing the radiation frequency from $0.6$ to $1.1$ THz. The results are discussed in terms of microscopic mechanisms of MIRO and compared to nonlinear effects observed earlier at significantly lower excitation frequencies.

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Magnetic quantum ratchet effect in (Cd,Mn)Te- and CdTe-based quantum well structures with a lateral asymmetric superlattice

We report on the observation of magnetic quantum ratchet effect in (Cd,Mn)Te- and CdTe-based quantum well structures with an asymmetric lateral dual grating gate superlattice subjected to an external magnetic field applied normal to the quantum well plane. A dc electric current excited by cw terahertz laser radiation shows 1/B-oscillations with an amplitude much larger as compared to the photocurrent at zero magnetic field. We show that the photocurrent is caused by the combined action of a spatially periodic in-plane potential and the spatially modulated radiation due to the near field effects of light diffraction. Magnitude and direction of the photocurrent are determined by the degree of the lateral asymmetry controlled by the variation of voltages applied to the individual gates. The observed magneto-oscillations with enhanced photocurrent amplitude result from Landau quantization and, for (Cd,Mn)Te at low temperatures, from the exchange enhanced Zeeman splitting in diluted magnetic heterostructures. Theoretical analysis, considering the magnetic quantum ratchet effect in the framework of semiclassical approach, describes quite well the experimental results.

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Photogalvanic probing of helical edge channels in 2D HgTe topological insulators

We report on the observation of a circular photogalvanic current excited by terahertz (THz) laser radiation in helical edge channels of HgTe-based 2D topological insulators (TIs). The direction of the photocurrent reverses by switching the radiation polarization from right-handed to left-handed one and, for fixed photon helicity, is opposite for the opposite edges. The photocurrent is detected in a wide range of gate voltages. With decreasing the Fermi level below the conduction band bottom, the current emerges, reaches a maximum, decreases, changes its sign close to the charge neutrality point (CNP), and again rises. Conductance measured over a 7 $μ$m distance at CNP approaches 2e2/h, the value characteristic for ballistic transport in 2D TIs. The data reveal that the photocurrent is caused by photoionization of helical edge electrons to the conduction band. We discuss the microscopic model of this phenomenon and compare calculations with the experimental data.

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Photon Drag Effect in (Bi$_{1-x}$Sb$_{x}$)$_{2}$Te$_{3}$ Three Dimensional Topological Insulators

We report on the observation of a terahertz radiation induced photon drag effect in epitaxially grown $n$- and $p$-type (Bi$_{1-x}$Sb$_{x}$)$_{2}$Te$_{3}$ three dimensional topological insulators with different antimony concentrations $x$ varying from 0 to 1. We demonstrate that the excitation with polarized terahertz radiation results in a $dc$ electric photocurrent. While at normal incidence a current arises due to the photogalvanic effect in the surface states, at oblique incidence it is outweighed by the trigonal photon drag effect. The developed microscopic model and theory show that the photon drag photocurrent is due to the dynamical momentum alignment by time and space dependent radiation electric field and implies the radiation induced asymmetric scattering in the electron momentum space.

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Quantum Oscillations of Photocurrents in HgTe Quantum Wells with Dirac and Parabolic Dispersions

We report on the observation of magneto-oscillations of terahertz radiation induced photocurrent in HgTe/HgCdTe quantum wells (QWs) of different widths, which are characterized by a Dirac-like, inverted and normal parabolic band structure. The photocurrent data are accompanied by measurements of photoresistance (photoconductivity), radiation transmission, as well as magneto-transport. We develop a microscopic model of a cyclotron-resonance assisted photogalvanic effect, which describes main experimental findings. We demonstrate that the quantum oscillations of the photocurrent are caused by the crossing of Fermi level by Landau levels resulting in the oscillations of spin polarization and electron mobilities in spin subbands. Theory explains a photocurrent direction reversal with the variation of magnetic field observed in experiment. We describe the photoconductivity oscillations related with the thermal suppression of the Shubnikov-de Haas effect.

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