arXiv subjects

V. V. Glushkov

Publications and source records attributed to V. V. Glushkov.

17 recordsLinked to original sources

arXiv2022

Hall effect anisotropy in the paramagnetic phase of Ho0.8Lu0.2B12 induced by dynamic charge stripes

A detailed study of charge transport in the paramagnetic phase of Ho0.8Lu0.2B12 strongly correlated antiferromagnet was carried out at temperatures 1.9-300 K in magnetic fields up to 80 kOe. Four mono-domain single crystals with different orientation of normal vectors to the lateral surface of Ho0.8Lu0.2B12 samples were investigated in order to establish the changes in Hall effect due to the anisotropy, induced by (i) the electronic phase separation (dynamic charge stripes) and (ii) formation of the disordered cage-glass state below 60 K. It was demonstrated that in magnetic fields above 40 kOe directed along the 001 and 110 axes in fcc crystals a considerable intrinsic anisotropic positive component Ranxy appears in addition to the ordinary negative Hall resistivity contribution. The relation Ranxy prop. Ranxx 1.7 was found between anomalous components of the resistivity tensor for H along 001 below 60 K, and the power law Ranxy prop. Ranxx 0.83 was detected for the orientation H along 110 at temperatures T below TS about 15 K. It is argued that below TS about 15 K the anomalous odd Ranxy(T) and even Ranxx(T) parts of the resistivity tensor may be interpreted in terms of formation of a large size clusters in the filamentary structure of fluctuating charges (stripes). We assume that these Ranxy(001) and Ranxy(110) components represent the intrinsic (Berry phase contribution) and extrinsic (skew scattering) mechanism, respectively. An additional ferromagnetic contribution to anomalous Hall effect (AHE) for both ordinary and anisotropic components in Hall signal was registered and attributed to the effect of magnetic polarization of 5d states (ferromagnetic nano-domains) in the conduction band of Ho0.8Lu0.2B12.

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arXiv2019

Maltese Cross anisotropy in Ho0.8Lu0.2B12 antiferromagnetic metal with dynamic charge stripes

The model strongly correlated electron system Ho0.8Lu0.2B12 which demonstrates a cooperative Jahn-Teller instability of the boron sub-lattice in combination with rattling modes of Ho(Lu) ions, dynamic charge stripes and unusual antiferromagnetic (AF) ground state has been studied in detail at low temperatures by magnetoresistance, magnetization and heat capacity measurements. Based on received results it turns out that the angular H-fi-T magnetic phase diagrams of this non-equilibrium AF metal can be reconstructed in the form of a Maltese cross. The dramatic AF ground state symmetry lowering of this dodecaboride with fcc crystal structure can be attributed to the redistribution of conduction electrons which leave the RKKY oscillations of the electron spin density to participate in the dynamic charge stripes providing with extraordinary changes in the indirect exchange interaction between magnetic moments of Ho3+ ions and resulting in the emergence of a number of various magnetic phases. It is also shown that the two main contributions to magnetoresistance in the complex AF phase, the (i) positive linear on magnetic field and the (ii) negative quadratic component can be separated and analyzed quantitatively, correspondingly, in terms of charge carrier scattering on spin density wave (5d) component of the magnetic structure and on local 4f-5d spin fluctuations of holmium sites.

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arXiv2018

Observation of dynamic charge stripes in Tm0.19Yb0.81B12 at the metal-insulator transition

Higher accuracy low temperature charge transport measurements in combination with precise X-ray diffraction experiment have allowed detecting the symmetry lowering in the single domain Tm0.19Yb0.81B12 crystals of the family of dodecaborides with metal-insulator transition. Basing on the fine structure analysis we discover formation of dynamic charge stripes within the semiconducting matrix of Tm0.19Yb0.81B12. The charge dynamics in these metallic nano-size conducting channels is characterized by broad-band optical spectroscopy that allowed estimating the frequency (~2.4 10^11 Hz) of quantum motion of the charge carriers. It is suggested that caused by cooperative Jahn-Teller effect in the boron sub-lattice, the large amplitude rattling modes of the Tm and Yb ions are responsible for modulation of the conduction band along [110] direction through the variation of 5d-2p hybridization of electron states.

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arXiv2016

Magnetization of the Mn$_{1-x}$Fe$_x$Si in high magnetic field up to 50 T: possible evidence of a field-induced Griffiths phase

Magnetic properties of single crystals of Mn$_{1-x}$Fe$_x$Si solid solutions with $x < 0.2$ are investigated by pulsed field technique in magnetic fields up to 50 T. It is shown that magnetization of Mn$_{1-x}$Fe$_x$Si in the paramagnetic phase follows power law $M(B) \sim B^α$ with the exponents $α\sim 0.33-0.5$, which starts above characteristic fields $B_c \sim 1.5-7$ T depending on the sample composition and lasts up to highest used magnetic field. Analysis of magnetization data including SQUID measurements in magnetic fields below 5 T suggests that this anomalous behavior may be likely attributed to the formation of a field-induced Griffiths phase in the presence of spin-polaron effects.

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arXiv2015

Suppression of Superconductivity in Lu$_x$Zr$_{1-x}$B$_{12}$ : Evidence of Static Magnetic Moments Induced by Non-Magnetic Impurities

Based on low temperature resistivity, heat capacity and magnetization investigations we show that the unusually strong suppression of superconductivity in Lu$_x$Zr$_{1-x}$B$_{12}$ BSC-type superconductors in the range $x$$<$0.08 is caused by the emergence of static spin polarization in the vicinity of non-magnetic lutetium impurities. The analysis of received results points to a formation of static magnetic moments with $μ_{eff}$$\approx$$3μ_B$ per Lu-ion. The size of these spin polarized nanodomains was estimated to be about 5 $Å$.

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arXiv2015

Scrutinizing Hall effect in Mn$_{1-x}$Fe$_{x}$Si: Fermi surface evolution and hidden quantum criticality

Separating between ordinary (OHE) and anomalous (AHE) Hall effect in the paramagnetic phase of Mn$_{1-x}$Fe$_{x}$Si reveals OHE sign inversion associated with the hidden quantum critical (QC) point $x^*\sim0.11$. The semimetallic behavior at intermediate Fe content leads to verifiable predictions in the field of fermiology, magnetic interactions and QC in Mn$_{1-x}$Fe$_{x}$Si. The change of electron and hole concentrations is considered as a driving force for tuning the QC regime in Mn$_{1-x}$Fe$_{x}$Si via modifying of RKKY exchange interaction within the Heisenberg model of magnetism.

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arXiv2015

Macroscopic evidence of skyrmion lattice inhomogeneity and magnetic vortex states in the A-phase of MnSi

The magnetic inhomogeneity of the A-phase in MnSi chiral magnet is identified for the first time from the precise measurements of transverse magnetoresistance (MR) anisotropy. The area inside the A-phase (A-phase core) corresponds to isotropic MR having no confinement to the MnSi crystal lattice. Per contra, the MR becomes anisotropic both on the border of the A-phase and in other magnetic phases, the strongest magnetic scattering being observed when external magnetic field applied along [001] or [00-1] directions. We argue here that the established MR features prove the presence of two different types of the skyrmion lattices inside the A-phase, and the dense skyrmion state of the A-phase core is built from individual skyrmions similar to Abrikosov-type magnetic vortexes.

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arXiv2014

Charge transport in Ho$_x$Lu$_{1-x}$B$_{12}$: Separating Positive and Negative Magnetoresistance in Metals with Magnetic Ions

The magnetoresistance (MR) $Δρ/ρ$ of cage-glass compound Ho$_x$Lu$_{1-x}$B$_{12}$ with various concentration of magnetic holmium ions ($x$$\leq$0.5) has been studied in detail concurrently with magnetization M(T) and Hall effect investigations on high quality single crystals at temperatures 1.9-120 K and in magnetic field up to 80 kOe. The undertaken analysis of $Δρ/ρ$ allows us to conclude that the large negative magnetoresistance (nMR) observed in vicinity of Neel temperature is caused by scattering of charge carriers on magnetic clusters of Ho$^{3+}$ ions, and that these nanosize regions with AF exchange inside may be considered as short range order AF domains. It was shown that the Yosida relation $-Δρ/ρ$$\sim$$M^2$ provides an adequate description of the nMR effect for the case of Langevin type behavior of magnetization. Moreover, a reduction of Ho-ion effective magnetic moments in the range 3-9$μ_B$ was found to develop both with temperature lowering and under the increase of holmium content. A phenomenological description of the large positive quadratic contribution $Δρ/ρ$$\sim$$μ_D^2 H^2$ which dominates in Ho$_x$Lu$_{1-x}$B$_{12}$ in the intermediate temperature range 20-120 K allows to estimate the drift mobility exponential changes $μ_D$$\sim$$T^{-a}$ with $a$=1.3-1.6 depending on Ho concentration. An even more comprehensive behavior of magnetoresistance has been found in the AF state of Ho$_x$Lu$_{1-x}$B$_{12}$ where an additional linear positive component was observed and attributed to charge carriers scattering on the spin density wave (SDW). High precision measurements of $Δρ/ρ=f(H,T)$ have allowed us also to reconstruct the magnetic H-T phase diagram of Ho$_{0.5}$Lu$_{0.5}$B$_{12}$ and to resolve its magnetic structure as a superposition of 4f (based on localized moments) and 5d (based on SDW) components.

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arXiv2014

Magnetization scaling in the paramagnetic phase of Mn1-xFexSi solid solutions

The magnetization field and temperature dependences in the paramagnetic phase of Mn1-xFexSi solid solutions with x<0.3 are investigated in the range B<5 T and T<60 K. It is found that field dependences of the magnetization M(B,T=const) exhibit scaling behavior of the form B\partial M/\partial B-M=F(B/(T-Ts)), where Ts denotes an empirically determined temperature of the transition into the magnetic phase with fluctuation driven short-range magnetic order and F(\c{hi}) is a universal scaling function for given composition. The scaling relation allowed concluding that the magnetization in the paramagnetic phase of Mn1-xFexSi is represented by the sum of two terms. The first term is saturated by the scaling variable \c{hi}=B/(T-Ts), whereas the second is linearly dependent on the magnetic field. A simple analytical formula describing the magnetization is derived and applied to estimates of the parameters characterizing localized magnetic moments in the studied system. The obtained data may be qualitatively interpreted assuming magnetic inhomogeneity of the paramagnetic phase on the nanoscale.

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arXiv2011

Spin excitations of the correlated semiconductor FeSi probed by THz radiation

By direct measurements of the complex optical conductivity $σ(ν)$ of FeSi we have discovered a broad absorption peak centered at frequency $ν_{0}(4.2 K) \approx 32 cm^{-1}$ that develops at temperatures below 20 K. This feature is caused by spin-polaronic states formed in the middle of the gap in the electronic density of states. We observe the spin excitations between the electronic levels split by the exchange field of $H_{e}=34\pm 6 T$. Spin fluctuations are identified as the main factor determining the formation of the spin polarons and the rich magnetic phase diagram of FeSi.

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arXiv2011

Hall effect in the vicinity of quantum critical point in Tm1-xYbxB12

The angular, temperature and magnetic field dependences of Hall resistance roH for the rare-earth dodecaboride solid solutions Tm1-xYbxB12 have been studied in a wide vicinity of the quantum critical point (QCP) xC~0.3. The measurements performed in the temperature range 1.9-300 K on high quality single crystals allowed to find out for the first time in these fcc compounds both an appearance of the second harmonic contribution in ro2H at QCP and its enhancement under the Tm to ytterbium substitution and/or with increase of external magnetic field. When the Yb concentration x increases a negative maximum of a significant amplitude was shown to appear on the temperature dependences of Hall coefficient RH(T) for the Tm1-xYbxB12 compounds. Moreover, a complicated activation type behavior of the Hall coefficient is observed at intermediate temperatures for x>0.5 with activation energies Eg~200K and Ea~55-75K in combination with the sign inversion of RH(T) at low temperatures in the coherent regime. The density of states renormalization effects are analyzed within the variation of Yb concentration and the features of the charge transport in various regimes (charge gap formation, intra-gap manybody resonance and coherent regime) are discussed in detail in Tm1-xYbxB12 solid solutions.

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arXiv2010

Hall effect in PrB$_6$ and NdB$_6$

Hall effect was studied on the single crystals of antiferromagnets PrB$_6$ and NdB$_6$ at temperatures 2K$<$T$<300$K in magnetic fields up to 8T using the sample rotation technique. At low magnetic fields $μ_0$H$\leq1$T Hall coefficient R$_\mathrm{H}$, which is practically temperature independent in paramagnetic state at 8K$\leq$T$\leq70$K, is characterized by the values of R$_H$(PrB$_6$)$\sim-(4.2\pm0.1)\cdot10^{-4}$ cm$^3$/C and R$_H$(NdB$_6$)$\sim-(4.1\pm0.1)\cdot10^{-4}$ cm$^3$/C. Rather different behaviour of R$_H$ is observed in antiferromagnetic (AF) phases of these hexaborides. For PrB$_6$ the decrease of temperature below T$_N\approx6.7$K is accompanied by a noticeable ($ΔR_H/R_H\sim10%$) elevation of R$_H$($μ_0$H$=1$T) to the values of $-(3.8\pm0.1)\cdot10^{-4}$ cm$^3$/C. On the contrary, the low field Hall coefficient in NdB$_6$ diminishes by about 15% reaching the value R$_H\approx-(4.7\pm0.1)\cdot10^{-4}$ cm$^3$/C in AF state at 2.5K. The increase of magnetic field inducing magnetic transition in the commensurate magnetic phase of PrB$_6$ results in essential R$_H$ changes (up to 10%) at liquid helium temperatures. The anomalous behaviour of the charge transport parameters for RB$_6$ (R=Pr, Nd) found in vicinity of Neel temperature suggests the possible effect of $5d$-states spin density polarization of both in AF and paramagnetic states of the compounds under investigation.

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arXiv2005

Hall Effect anomalies near Quantum Critical Point in CeCu6-xAux

Precision measurements of the Hall effect have been carried out for both archetypal heavy fermion compound - CeCu6 and exemplary solid solutions CeCu6-xAux (x= 0.1 and 0.2) with quantum critical behavior. The experimental results have been obtained by technique with a sample rotation in magnetic field in the temperature range 1.8-300K. The experiment revealed a complex activation type dependence of the Hall coefficient RH(T) in CeCu6 with activation energies Ea1/kB = 110K and Ea2/kB = 1.5K in temperature ranges 50-300K and 3-10K, respectively. Microscopic parameters of charge carriers transport (effective masses, relaxation time) and localization radii ap1,2* of heavy fermions (ap1*(T>50K)= 1.7 A and ap2*(T<20K)= 14 A) were estimated for CeCu6. The second angular harmonic contribution has been established in the Hall voltage of CeCu5.9Au0.1 and CeCu6 at temperatures below T*=24K. A hyperbolic type divergence of the second harmonic term in Hall effect RH2(T)= C(1/T-1/T*) at low temperatures is found to be accompanied with a power-law behavior RH(T)= T -0.4 of the main contribution in the Hall coefficient for CeCu5.9Au0.1 compound with quantum critical behavior.

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arXiv2005

Heavy Fermions in Strongly Correlated Electron System CeAl3

High precision measurements of the Hall effect have been carried out for archetypal heavy fermion compound - CeAl3 in a wide range of temperatures 1.8-300K. For the first time a complex activated behavior of the Hall coefficient in CeAl3 with activation energies Ea1/kB=220K and Ea2/kB=3.3K has been observed in the temperature intervals 50-300K and 10-35K respectively. At temperatures below the maximum of the Hall effect T<Tmax=10K an asymptotic dependence RH(T)=exp(-Ea3/kBT) was found in CeAl3 with the value Ea3/kB=0.38K estimated from the experimental data. The temperature evolution of microscopic parameters (effective mass and localization radius) evaluated for the many-body states (heavy fermions) is discussed in terms of an electron-polaron states formation in vicinity of Ce-sites in the CeAl3 matrix.

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arXiv2005

On the problem of the Kondo-lattice model application to CeB6

Precision measurements of charge transport parameters (resistivity, Hall and Seebeck coefficients) have been carried out on high-quality single-crystals of cerium hexaboride in a wide temperature range 1.8-300 K. It is shown that in the temperature interval of 5 K < T < T* = 80 K the magnetic contribution in resistivity obeys the power law rm = T -1/n, which corresponds to the regime of weak localization of charge carriers with the critical index 1/n = 0.39 +- 0.02. In the same temperature interval an asymptotic behavior of thermopower S = -lnT is found together with an essential decrease of the charge carriers mobility in CeB6. A negative Hall coefficient anomaly has been detected at liquid helium temperatures. The data obtained are compared with the results predicted by the Kondo-lattice model and discussed also in terms of the theory of excitonic ferromagnetism.

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arXiv2004

Disorder driven quantum critical behavior in CuGeO3 doped with magnetic impurity

For the CuGeO3 doped with 1% of Fe the quantum critical behavior in a wide temperature range 1-40 K is reported. The critical exponents for susceptibility along different crystallographic axes are determined: a=0.34 (B//a and B//c) and a=0.31 (B//b). New effect of the frequency dependence of the critical exponent is discussed.

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arXiv2003

Quantum critical point in CuGeO3 doped with magnetic impurities

Using high frequency (up to 450 GHz) ESR and low temperature specific heat measurements we find that insertion of 1% Fe and 2% Co damps spin-Peierls and Neel transitions and for T<30K gives rise to onset of a quantum critical behaviour characteristic for a random dimer Griffiths phase.

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