Elastic Strains in SiGe Heterostructure With Non-Uniform Quantum Dots
Elastic strain distributions in SiGe heterostructures with quantum dots have been simulated with the use of the finite element method. The effect of a non-uniform germanium distribution in the nanoislands on the spatial dependence and the magnitude of elastic fields was studied. It is shown that quantum dots with a uniform component content are more strained in comparison with non-uniform nanoislands
cond-mat.mes-hall↗