arXiv subjects

V. V. Rylkov

Publications and source records attributed to V. V. Rylkov.

14 recordsLinked to original sources

arXiv2026

Effect of granules anisotropy on "double quantum" magnetic resonance excitation in nanogranular composites

Films of metal-insulator nanogranular composites (CoFeB)x(Al2O3)100-x with different contents of the metal ferromagnetic (FM) phase CoFeB (x ~ 15-50 at.%) are investigated by the method of electron spin resonance (ESR) in a wide range of frequencies (f = 7-80 GHz) and temperatures (T = 4.2-300 K). Besides the conventional FM resonance signal, the experimental spectra demonstrate an additional absorption peak with a double effective g-factor g ~ 4 which is explained within the quantum mechanical "giant spin" model by excitation of "double quantum" transitions in FM granules CoFeB. According to the theory, the intensity of this "double quantum" peak is a complex function of frequency and temperature, including as parameters the granule magnetic moment and anisotropy. Experimentally, the size and anisotropy of the granules can be varied either changing the nominal FM phase content x in the composites or annealing the samples at different temperatures. Here we study the effects of concentration x and thermal annealing of (CoFeB)x(Al2O3)100-x films on their ESR spectral parameters. The observed behavior of the "double quantum" peak intensity is well explained within the considered "giant spin" theoretical concept. In conclusion, we demonstrate the correlation between the size of FM granules in nanocomposites and their anisotropy, indicating the surface origin of this anisotropy.

cond-mat.mtrl-sci↗

arXiv2024

The origin of g $\approx$ 4 EPR line in magnetic nanocomposites: Manifestation of double quantum transitions in ferromagnetic granules

Films of metal-insulator nanogranular composites M$_x$D$_{100-x}$ with different compositions and atomic percentage of metal and dielectric phases (M = Fe, Co, Ni, CoFeB; D = Al$_2$O$_3$, SiO$_2$, ZrO$_2$; x $\approx$ 15-60 at.%) are investigated by electron magnetic resonance in a wide range of frequencies (f = 7-37 GHz) and temperatures (T = 4.2-360 K). At concentrations of the metallic ferromagnetic phase below the percolation threshold, the experimental spectra, besides the conventional ferromagnetic resonance signal, demonstrate an additional absorption peak characterized by a double effective g-factor g $\approx$ 4. The appearance of such a peak in the resonance spectra and its unusual properties are explained in the framework of the quantum mechanical "giant spin" model by the excitation of "forbidden" ("double quantum") transitions in magnetic nanogranules with a change of the spin projection $Δm = \pm2$.

cond-mat.mtrl-sci↗

arXiv2023

Specific features of g $\approx$ 4.3 EPR line behavior in magnetic nanogranular composites

Films of metal-insulator nanogranular composites M$_x$D$_{100-x}$ with different composition and percentage of metal and dielectric phases (M = Fe, Co, CoFeB; D = Al$_2$O$_3$, SiO$_2$, LiNbO$_3$; x $\approx$ 15-70 at.%) are investigated by magnetic resonance in a wide range of frequencies (f = 7-37 GHz) and temperatures (T = 4.2-360 K). In addition to the usual ferromagnetic resonance signal from an array of nanogranules, the experimental spectra contain an additional absorption peak, which we associate with the electron paramagnetic resonance (EPR) of Fe and Co ions dispersed in the insulating space between the granules. In contrast to the traditional EPR of Fe and Co ions in weakly doped non-magnetic matrices, the observed peak demonstrates a number of unusual properties, which we explain by the presence of magnetic interactions between ions and granules.

cond-mat.mtrl-sci↗

arXiv2020

Multifilamentary character of anticorrelated capacitive and resistive switching in memristive structures based on (CoFeB)x(LiNbO3)100-x nanocomposite

Resistive and capacitive switching in capacitor metal/nanocomposite/metal (M/NC/M) structures based on (CoFeB)x(LiNbO3)100-x NC fabricated by ion-beam sputtering with metal content x $\approx$ 8-20 at. % is studied. The peculiarity of the structure synthesis was the use of increased oxygen content ($\approx$ 2*10^-5 Torr) at the initial stage of the NC growth. The NC films, along with metal nanogranules of 3-6 nm in size, contained a large number of dispersed Co (Fe) atoms (up to ~10^22 cm^-3). Measurements were performed both in DC and AC (frequency range 5-13 MHz) regimes. When switching structures from high-resistance (Roff) to low-resistance (Ron) state, the effect of a strong increase in their capacity was found, which reaches 8 times at x $\approx$ 15 at. % and the resistance ratio Roff/Ron $\approx$ 40. The effect is explained by the synergetic combination of the multifilamentary character of resistive switching (RS) and structural features of the samples associated, in particular, with the formation of high-resistance and strongly polarizable LiNbO3 layer near the bottom electrode of the structures. The proposed model is confirmed by investigations of RS of two-layer nanoscale M/NC/LiNbO3/M structures as well as by studies of the magnetization of M/NC/M structures in the pristine state and after RS.

cond-mat.mes-hall↗

arXiv2019

Mechanisms of FMR line broadening in CoFeB-LiNbO$_3$ granular films in the vicinity of metal-insulator transition

Metal-insulator (CoFeB)$_x$(LiNbO$_3$)$_{100-x}$ nanocomposite films with different content of the ferromagnetic (FM) phase $x$ are investigated by ferromagnetic resonance (FMR) technique. A strong change of the FMR line shape is observed in the vicinity of metal-insulator transition (MIT) of the film, where the hopping-type conductivity $σ$ modifies to the regime of a strong intergranular tunnelling, characterized by a logarithmic dependence $σ(T)$ at high temperatures. It is shown that below MIT, the FMR linewidth is mainly determined by the inhomogeneous distribution of the local anisotropy axes in the film plane. Above MIT, the contribution of this inhomogeneity to the line broadening decreases. At the same time, two-magnon magnetic relaxation processes begin to play a significant role in the formation of the linewidth. The observed behaviour indicates the critical role of interparticle exchange in the tunnelling regime above MIT of the nanocomposite.

cond-mat.mtrl-sci↗

arXiv2016

Tunneling anomalous Hall effect in the nanogranular CoFe-B-Al-O films near the metal-insulator transition

We present results of experimental studies of structural, magneto-transport and magnetic properties of CoFe-B-Al-O films deposited onto a glass ceramic substrate by the ion-beam sputtering of the target composed of Co40Fe40B20 and Al2O3 plates. The system consists on the strained crystalline CoFe metallic nanogranules with the size 2-5 nm which are embedded into the B-Al-O oxide insulating matrix. Our investigations are focused on the anomalous Hall effect (AHE) resistivity Rh and longitudinal resistivity R at T=5-200 K on the metallic side of metal-insulator transition in samples with the metal content x=49-56 at.%, that nominally corresponds to (Co40Fe40B20)x(Al2O3)100-x in the formula approximation. The conductivity at T > 15 K follows the lnT behavior that matches a strong tunnel coupling between nanogranules. It is shown that the scaling power-laws between AHE resistivity and longitudinal resistivity strongly differ, if temperature T or metal content x are variable parameters: Rh(T)~R(T)^0.4-0.5 obtained from the temperature variation of R and Rh at fixed x, while Rh(x)/x~R(x)^0.24, obtained from measurements at the fixed low temperature region (10-40 K) for samples with different x. We qualitatively describe our experimental data in the frame of phenomenological model of two sources of AHE e.m.f. arising from metallic nanogranules and insulating tunneling regions, respectively, at that the tunneling AHE (TAHE) source is strongly shunted due to generation of local circular Hall currents. We consider our experimental results as the first experimental proof of the TAHE manifestation.

cond-mat.mes-hall↗

arXiv2015

Magnetic anisotropy of polycrystalline high-temperature ferromagnetic Mn$_x$Si$_{1-x}$ ($x\approx0.5$) alloy films

A set of thin film Mn$_x$Si$_{1-x}$ alloy samples with different manganese concentration x = 0.44 - 0.63 grown by the pulsed laser deposition (PLD) method onto the Al$_2$O$_3$(0001) substrate was investigated in the temperature range 4 - 300 K using ferromagnetic resonance (FMR) measurements in the wide range of frequencies (f = 7 - 60 GHz) and magnetic fields (H = 0 - 30 kOe). For samples with x = 0.52 - 0.55, FMR data show clear evidence of ferromagnetism with high Curie temperatures T$_\text{C}$ ~ 300 K. These samples demonstrate complex and unusual character of magnetic anisotropy described in the frame of phenomenological model as a combination of the essential second order easy plane anisotropy contribution and the additional forth order uniaxial anisotropy contribution with easy direction normal to the film plane. We explain the obtained results by a polycrystalline (mosaic) structure of the films caused by the film-substrate lattice mismatch. The existence of extra strains at the crystallite boundaries leads to an essential inhomogeneous magnetic anisotropy in the film plane.

cond-mat.mtrl-sci↗

arXiv2015

Grain-size dependent high-temperature ferromagnetism of polycrystalline MnxSi1-x (x~0.5) films

We present the results of a comprehensive study of magnetic, magneto-transport and structural properties of nonstoichiometric MnxSi1-x (x=0.51-0.52) films grown by the Pulsed Laser Deposition (PLD) technique onto Al2O3(0001) single crystal substrates at T = 340°C. A highlight of our PLD method is the using of non-conventional (shadow) geometry with Kr as a scattering gas during the sample growth. It is found that studied films exhibit high-temperature (HT) ferromagnetism (FM) with the Curie temperature TC ~ 370 K accompanied by positive sign anomalous Hall effect (AHE); they also reveal the layered polycrystalline structure with a self-organizing grain size distribution. The HT FM order is originated from the bottom interfacial nanocrystalline layer, while the upper layer possesses the low temperature (LT) type of FM order with TC = 46 K, gives essential contribution to the magnetization below 50 K and is homogeneous on the nanometer size scale. Under these conditions, AHE changes its sign from positive to negative at T < 30 K. We attribute observed properties to the synergy of self-organizing distribution of MnxSi1-x crystallites in size and peculiarities of defect-induced FM order in PLD grown polycrystalline MnxSi1-x (x~0.5) films.

cond-mat.mes-hall↗

arXiv2012

Pecularities of Hall effect in GaAs/δ /GaAs/In\timesGa1-\timesAs/GaAs (\times {\approx} 0.2) heterostructures with high Mn content

Transport properties of GaAs/δ /GaAs/In\timesGa1-\timesAs/GaAs structures containing InxGa1-xAs (\times {\approx} 0.2) quantum well (QW) and Mn delta layer (DL) with relatively high, about one Mn monolayer (ML) content, are studied. In these structures DL is separated from QW by GaAs spacer with the thickness ds = 2-5 nm. All structures possess a dielectric character of conductivity and demonstrate a maximum in the resistance temperature dependence Rxx(T) at the temperature {\approx} 46K which is usually associated with the Curie temperature Tc of ferromagnetic (FM) transition in DL. However, it is found that the Hall effect concentration of holes pH in QW does not decrease below TC as one ordinary expects in similar systems. On the contrary, the dependence pH(T) experiences a minimum at T = 80-100 K depending on the spacer thickness, then increases at low temperatures more strongly than ds is smaller and reaches a giant value pH = (1-2)\cdot10^13 cm^(-2). Obtained results are interpreted in the terms of magnetic proximity effect of DL on QW, leading to induce spin polarization of the holes in QW. Strong structural and magnetic disorder in DL and QW, leading to the phase segregation in them is taken into consideration. The high pH value is explained as a result of compensation of the positive sign normal Hall effect component by the negative sign anomalous Hall effect component.

cond-mat.mes-hall↗

arXiv2010

Charge inhomogeneities and transport in semiconductor heterostructures with a manganese $δ$-layer

We study experimentally and theoretically the effects of disorder, nonlinear screening, and magnetism in semiconductor heterostructures containing a $δ$-layer of Mn, where the charge carriers are confined within a quantum well and hence both ferromagnetism and transport are two-dimensional (2D) and differ qualitatively from their bulk counterparts. Anomalies in the electrical resistance observed in both metallic and insulating structures can be interpreted as a signature of significant ferromagnetic correlations. The insulating samples turn out to be the most interesting as they can give us valuable insights into the mechanisms of ferromagnetism in these heterostructures. At low charge carrier densities, we show how the interplay of disorder and nonlinear screening can result in the organization of the carriers in the 2D transport channel into charge droplets separated by insulating barriers. Based on such a droplet picture and including the effect of magnetic correlations, we analyze the transport properties of this set of droplets, compare it with experimental data, and find a good agreement between the model calculations and experiment. Our analysis shows that the peak or shoulder-like features observed in temperature dependence of resistance of 2D heterostructures $δ$-doped by Mn lie significantly below the Curie temperature $T_{C}$ unlike the three-dimensional case, where it lies above and close to $T_{C}$. We also discuss the consequences of our description for understanding the mechanisms of ferromagnetism in the heterostructures under study.

cond-mat.mes-hall↗

arXiv2010

Room temperature ferromagnetism and anomalous Hall effect in Si$_{1-x}$Mn$_x$ ($x\approx 0.35$) alloys

A detailed study of the magnetic and transport properties of Si$_{1-x}$Mn$_x$ ($x\approx 0.35$) films is presented. We observe the anomalous Hall effect (AHE) in these films up to room temperature. The results of the magnetic measurements and the AHE data are consistent and demonstrate the existence of long-range ferromagnetic (FM) order in the systems under study. A correlation of the AHE and the magnetic properties of Si$_{1-x}$Mn$_x$ ($x\approx 0.35$) films with their conductivity and substrate type is shown. A theoretical model based on the idea of a two-phase magnetic material, in which molecular clusters with localized magnetic moments are embedded in the matrix of a weak itinerant ferromagnet, is discussed. The long-range ferromagnetic order at high temperatures is mainly due to the Stoner enhancement of the exchange coupling between clusters through thermal spin fluctuations (paramagnons) in the matrix. Theoretical predictions and experimental data are in good qualitative agreement.

cond-mat.mes-hall↗

arXiv2010

Room temperature ferromagnetism and anomalous Hall effect in Si_{1-x}Mn_x (x = 0.35) alloys

A detailed study of the magnetic and transport properties of Si1-xMnx (X = 0.35) films is presented. We observe the anomalous Hall effect (AHE) in these films up to room temperature. The results of the magnetic measurements and the AHE data are consistent and demonstrate the existence of long-range ferromagnetic (FM) order in the systems under study. A correlation of the AHE and the magnetic properties of Si1-xMnx (X = 0.35) films with their conductivity and substrate type is shown. A theoretical model based on the idea of a two-phase magnetic material, in which molecular clusters with localized magnetic moments are embedded in the matrix of a weak itinerant ferromagnet, is discussed. The long-range ferromagnetic order at high temperatures is mainly due to the Stoner enhancement of the exchange coupling between clusters through thermal spin fluctuations ("paramagnons") in the matrix. Theoretical predictions and experimental data are in good qualitative agreement.

cond-mat.mes-hall↗

arXiv2007

Structural and transport properties of GaAs/delta /GaAs/InxGa1-xAs/GaAs quantum wells

We report results of investigations of structural and transport properties of GaAs/Ga(1-x)In(x)As/GaAs quantum wells (QWs) having a 0.5-1.8 ML thick Mn layer, separated from the QW by a 3 nm thick spacer. The structure has hole mobility of about 2000 cm2/(V*s) being by several orders of magnitude higher than in known ferromagnetic two-dimensional structures. The analysis of the electro-physical properties of these systems is based on detailed study of their structure by means of high-resolution X-ray diffractometry and glancing-incidence reflection, which allow us to restore the depth profiles of structural characteristics of the QWs and thin Mn containing layers. These investigations show absence of Mn atoms inside the QWs. The quality of the structures was also characterized by photoluminescence spectra from the QWs. Transport properties reveal features inherent to ferromagnetic systems: a specific maximum in the temperature dependence of the resistance and the anomalous Hall effect (AHE) observed in samples with both "metallic" and activated types of conductivity up to ~100 K. AHE is most pronounced in the temperature range where the resistance maximum is observed, and decreases with decreasing temperature. The results are discussed in terms of interaction of 2D-holes and magnetic Mn ions in presence of large-scale potential fluctuations related to random distribution of Mn atoms. The AHE values are compared with calculations taking into account its "intrinsic" mechanism in ferromagnetic systems.

cond-mat.mtrl-sci↗

arXiv2006

Peculiarities of the transport properties of InMnAs layers, produced by the laser deposition, in strong magnetic fields

Magnetotransport properties of p-InMnAs layers are studied in pulsed magnetic fields up to 30 T. Samples were prepared by the laser deposition and annealed by ruby laser pulses. Well annealed samples show p-type conductivity while they were n-type before the annealing. Surprisingly the anomalous Hall effect resistance in paramagnetic state (T>40 K) and in strong magnetic fields (B > 20 T) appears to be greater than that in ferromagnetic state (T <= 40 K), while the longitudinal resistance rises with the temperature decrease. The negative magnetoresistance saturates in magnetic fields higher then 10T at T near 4 K only, whereas the saturation fields of the anomalous Hall effect resistance are much less (around 2 T at 30K). The total reduction of resistance exceeds 10 times in magnetic fields around of 10T. The obtained results are interpreted on the base of the assumptions of the non-uniform distribution of Mn atoms acting as acceptors, the local ferromagnetic transition and the percolation-like character of the film conductivity, which prevailed under conditions of the strong fluctuations of the exchange interaction. Characteristic scales of the magneto-electric nonuniformity are estimated using analysis of the mesoscopic fluctuations of the non-diagonal components of the magnetoresistivity tensor.

cond-mat.mtrl-sci↗