arXiv subjects

V. V. Struzhkin

Publications and source records attributed to V. V. Struzhkin.

8 recordsLinked to original sources

arXiv2023

Phase transitions and spin-state of iron in FeO at the conditions of Earth's deep interior

Iron-bearing oxides undergo a series of pressure-induced electronic, spin and structural transitions that can cause seismic anomalies and dynamic instabilities in Earth's mantle and outer core. We employ x-ray diffraction and x-ray emission spectroscopy along with state-of-the-art density functional plus dynamical mean-field theory (DFT+DMFT) to characterize the electronic structure and spin states, and crystal-structural properties of wüstite (Fe$_{1-x}$O) -- a basic oxide component of Earth's interior -- at high pressure-temperature conditions up to 140 GPa and 2100 K. We find that FeO exhibits complex polymorphism under pressure, with abnormal compression behavior associated with electron-spin and crystallographic phase transitions, and resulting in a substantial change of bulk modulus. Our results reveal the existence of a high-pressure phase characterized by a metallic high-spin state of iron at about the pressure-temperature conditions of Earth's core-mantle boundary. The presence of high-spin metallic iron near the base of the mantle can significantly influence the geophysical and geochemical properties of Earth's deep interior.

cond-mat.str-el↗

arXiv2018

Imaging stress and magnetism at high pressures using a nanoscale quantum sensor

Pressure alters the physical, chemical and electronic properties of matter. The development of the diamond anvil cell (DAC) enables tabletop experiments to investigate a diverse landscape of high-pressure phenomena ranging from the properties of planetary interiors to transitions between quantum mechanical phases. In this work, we introduce and utilize a novel nanoscale sensing platform, which integrates nitrogen-vacancy (NV) color centers directly into the culet (tip) of diamond anvils. We demonstrate the versatility of this platform by performing diffraction-limited imaging (~600 nm) of both stress fields and magnetism, up to pressures ~30 GPa and for temperatures ranging from 25-340 K. For the former, we quantify all six (normal and shear) stress components with accuracy $<0.01$ GPa, offering unique new capabilities for characterizing the strength and effective viscosity of solids and fluids under pressure. For the latter, we demonstrate vector magnetic field imaging with dipole accuracy $<10^{-11}$ emu, enabling us to measure the pressure-driven $α\leftrightarrowε$ phase transition in iron as well as the complex pressure-temperature phase diagram of gadolinium. In addition to DC vector magnetometry, we highlight a complementary NV-sensing modality using T1 noise spectroscopy; crucially, this demonstrates our ability to characterize phase transitions even in the absence of static magnetic signatures. By integrating an atomic-scale sensor directly into DACs, our platform enables the in situ imaging of elastic, electric and magnetic phenomena at high pressures.

cond-mat.mes-hall↗

arXiv2013

High-pressure effects on single crystals electron-doped r$_{2-x}$Ce$_{x}$CuO$_{4}$

We present high pressure diamond anvil cell synchrotron X-ray, resistivity, and ac-susceptibility measurements on electron-doped cuprate Pr$_{2-x}$Ce$_{x}$CuO$_{4}$ to much higher pressures than previously reported. At 2.72 GPa between 88 and 98$%$ of the superconducting T$^\prime$ phase \cite{Tprime} of the optimally doped Pr$_{1.85}$Ce$_{0.15}$CuO$_{4}$ transforms into the insulating phase T. The T$_{c}$ of the remaining 2-12$%$ T$^\prime$ phase is suppressed continuously from 22 K to 18.5 K at about 14 GPa. Remarkably, the T$_{c}$ of the over doped Pr$_{1.83}$Ce$_{0.17}$CuO$_{4}$ remains practically unchanged even at 32 GPa. This behavior of the electron-doped cuprate contrasts with that of the hole-doped cuprate for which T$_{c}$ is first substantially enhanced with applied pressure.

cond-mat.supr-con↗

arXiv2011

Quantum critical point and spin fluctuations in the lower-mantle ferropericlase

Ferropericlase, (Mg,Fe)O is one of the most abundant minerals of the Earth's lower mantle. The high-spin (HS) to low-spin (LS) transition in the Fe2+ ions can dramatically alter the physical and chemical properties of (Mg,Fe)O in the deep mantle, thereby changing our understanding of the Earth's deep interior. To establish a fundamental understanding of the ground electronic state of iron, the electronic and magnetic states of Fe2+ in (Mg0.75,Fe0.25)O have been investigated by transmission (TMS) and synchrotron (NFS) Mössbauer spectroscopy at high pressures and low temperatures (down to 5 K). The results show that the ground electronic state of Fe2+ at the critical pressure Pc of the spin transition and close to T=0 is determined by a quantum critical point Pq (T = 0, Pc) where the energy difference between the HS and LS states (an energy gap for the spin fluctuation) is zero. The deviation from T=0 leads to the thermal excitation for the HS or LS state, suggesting a strong influence on the magnetic and hence the physical properties of the material. Combining these with theoretical calculations, the results indicate that the existence of the quantum critical point at zero temperature affects not only the low-temperature physical properties, but also the strong temperature/pressure-dependent properties at conditions relevant to the middle layer of the lower mantle.

cond-mat.str-el↗

arXiv2009

Magnetite: Raman study of the high-pressure and low-temperature effects

We report the results of a low-temperature (300K-15K) high-pressure (up to 22GPa) Raman study of the Verwey transition in magnetite (Fe3O4). We use additional Raman modes observed below the Verwey transition to determine how the transition temperature changes with the quasihydrostatic pressure. Increase of the pressure results in the linear decrease of the Verwey transition temperature, with no discontinuity. The corresponding pressure coefficient dTV/dP is found to be ~ -5.2 K/GPa. Such a decrease is substantially larger than the one predicted by the mean-field Coulomb interaction model of the transition.

cond-mat.mtrl-sci↗

arXiv2008

Layered Structures Favor Superconductivity in Compressed Solid SiH$_{4}$

The electronic and lattice dynamical properties of compressed solid SiH$_{4}$ have been calculated in the pressure range up to 300 GPa with density functional theory. We find that structures having a layered network with eight-fold SiH$_{8}$ coordination favor metallization and superconductivity. SiH$_{4}$ in these layered structures is predicted to have superconducting transition temperatures ranging from 20 to 80 K, thus presenting new possibilities for exploring high temperature superconductivity in this hydrogen-rich system.

cond-mat.supr-con↗

arXiv2001

Phonon-assisted electronic topological transition in MgB2 under pressure

We report measurements of the superconducting critical temperature Tc of polycrystalline MgB2 samples containing isotopically pure (10)B and (11)B under quasi-hydrostatic pressure conditions in He pressure media up to 44 GPa. Measurements to volume compressions V/V_0 ~ 0.82 allow us to observe a kink in the volume dependence of Tc for Mg(10)B2 (at 20 GPa) and Mg(11)B2 (at 15 GPa). The pressure dependence of the E(2g) mode also changes abruptly around 20 GPa for the Mg(10)B2 sample. The anharmonic character of the E(2g) phonon mode and anomalies in Tc pressure dependence are interpreted as the result of a phonon-assisted Lifshitz electronic topological transition.

cond-mat.supr-con↗

arXiv2001

Pressure Dependence of the Raman Spectrum, Lattice Parameters and Superconducting Critical Temperature of MgB2

We have observed a strongly broadened Raman band of MgB2 that shows anomalously large pressure dependence of its frequency. This band and its pressure dependence can be interpreted as the E2g zone center phonon, which is strongly anharmonic because of coupling to electronic excitations. The pressure dependence of Tc was measured to 14 GPa in hydrostatic conditions and can be explained only when a substantial pressure dependence of the Hopfield parameter h=N(0) ~(V0/V)^2.3(6)is taken into account.

cond-mat.supr-con↗