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V. Vinokur

Publications and source records attributed to V. Vinokur.

At least 19 recordsLinked to original sources

Experimental demonstration of scalable quantum key distribution over a thousand kilometers

Secure communication over long distances is one of the major problems of modern informatics. Classical transmissions are recognized to be vulnerable to quantum computer attacks. Remarkably, the same quantum mechanics that engenders quantum computers offers guaranteed protection against such attacks via quantum key distribution (QKD). Yet, long-distance transmission is problematic since the essential signal decay in optical channels occurs at a distance of about a hundred kilometers. We propose to resolve this problem by a QKD protocol, further referred to as the Terra Quantum QKD protocol (TQ-QKD protocol). In our protocol, we use semiclassical pulses containing enough photons for random bit encoding and exploiting erbium amplifiers to retranslate photon pulses and, at the same time, ensuring that at the chosen pulse intensity only a few photons could go outside the channel even at distances of about a hundred meters. As a result, an eavesdropper will not be able to efficiently utilize the lost part of the signal. The central component of the TQ-QKD protocol is the end-to-end loss control of the fiber-optic communication line since optical losses can in principle be used by the eavesdropper to obtain the transmitted information. However, our control precision is such that if the degree of the leak is below the detectable level, then the leaking states are quantum since they contain only a few photons. Therefore, available to the eavesdropper parts of the bit encoding states representing `0' and `1' are nearly indistinguishable. Our work presents the experimental demonstration of the TQ-QKD protocol allowing quantum key distribution over 1079 kilometers. Further refining the quality of the scheme's components will expand the attainable transmission distances. This paves the way for creating a secure global QKD network in the upcoming years.

quant-ph

Disorder driven inhomogeneous phase in the 2D-superconducting film of titanium nitride

Typically the superconducting phase weakens at several points with the increase in disorder before it is distroyed in the 2d-thin films. This may lead to an inhomogeneous superconducting state without a continuous phase. Here we present scanning tunneling spectroscopy measurements at 0.1 K in the disordered polycrystalline film of TiN describing the nanoscale size features of the superconducting state. The imaging shows imcommensurate charge density modulations, originating at the crystalline bounadries, and intercepted on large scale by the beat patterns in the regions of overlap. Electronic coherence is maintained over length scale minimum of crystalline sizes, and suffers scattering across low angle crystalline boundaries. The superconducting state fluctuates at the positions of the charge density modulations and zones of the weak phase appear in the vicinity of the beats. Our data shows that the BCS-like behavior evolves into the V-shaped density of states in such inhomogeneous regions as a result of the competition between the superconducting correlations with that of the strong electron-electron repulsive interactions assisted by the inelastic scattering at the crystalline boundaries.

cond-mat.supr-con

Aharonov-Bohm Oscillations in Singly-Connected Disordered Conductors

We show that transport and thermodynamic properties of \emph{singly-connected} disordered conductors exhibit quantum Aharonov - Bohm oscillations with the total magnetic flux through the system. The oscillations are associated with the interference contribution from a special class of electron trajectories confined to the surface of the sample.

cond-mat.mes-hall

Conductance behavior with temperature and magnetic field in the disordered films of titanium nitride

We report in this paper the temperature and mangetic field dependence of the conductance in the polycrystalline film of titanium nitride, before and after heating at ambient conditions. The difference between the two films is the room temperature sheet resistance which remains within 15 percent and both the films show superconducting transition at lower temperatures. The zero field and the high field data, respectively, corresponds to the superconducting and the normal states. Both the films display Atshuler-Aronov zero bias anamoly in their normal states, and the superconducting gap openeing up at low fields. However the heated film has a smaller gap owing to more pronounced zero bias suppression of the density of states. The normal states in both the films are similar to the quasi-2d-disordered metal and its behavior is studied with temperature. Our data suggests that the zero bias anamoly suppresses the superconducting gap with increase in the disorder.

cond-mat.supr-con

Local electronic properties in the superconducting and the normal phase in the disordered film of titanium nitride

We present in this paper the conductance maps at 100 mK in the disordered polycrystalline film of titanium nitride (TiN). At 5 nm, the film is close to quasi-two dimensional limit and exhibits features pertaining to the superconductor to insulator transition. We measured conductance maps at zero field and at 4 T, which represent the superconducting and the normal phase, respectively. The conductance map at 4 T is uniform, in which the conductance behavior, with logarithmic variation, resembles to the disorder enhanced electron-electron interaction in the two dimensional metallic phase. At low fields we observe the spatial variations of the conductance in the superconducting phase. At several places the superconducting energy gap fluctuates to an extent that the quasi-particle peaks are absent in the conductance curves. The conductance map over a region encompassing only few crystallites suggests that the inhomogeneities in the superconducting phase related to the spatial variations of the electronic density are across the crystalline boundaries.

cond-mat.supr-con

Many electron theory of 1/f-noise in hopping conductivity

We show that $1/f$-noise in the variable range hopping regime is related to transitions of many-electrons clusters (fluctuators) between two almost degenerate states. Giant fluctuation times necessary for $1/f$-noise are provided by slow rate of simultaneous tunneling of many localized electrons and by large activation barriers for their consecutive rearrangements. The Hooge constant steeply grows with decreasing temperature because it is easier to find a slow fluctuator at lower temperatures. Our conclusions qualitatively agree with the low temperature observations of $1/f$-noise in p-type silicon and GaAs.

cond-mat.dis-nn

Giant Quantum Freezing of Tunnel Junctions mediated by Environments

We investigate the quantum heat exchange between a nanojunction and a many-body or electromagnetic environment far from equilibrium. It is shown that the two-temperature energy emission-absorption mechanism gives rise to a giant heat flow between the junction and the environment. We obtain analytical results for the heat flow in an idealized high impedance environment and perform numerical calculations for the general case of interacting electrons and discuss the giant freezing and heating effects in the junction under typical experimental conditions.

cond-mat.mes-hall

Nonequilibrium mesoscopic superconductors in a fluctuational regime

We show that there exist a class of nonequilibrium systems for which a non-equilibrium analog of the Ginzburg-Landau (GL) functional can be constructed and propose the procedure for its derivation. As an example, we consider a small superconductor island of the size less than the coherence length in a stationary nonequlibrium state. We find the GL expansion of the free energy functional of such a system and analyze the dependence of the coefficients of the expansion upon the external drive and the non-equilibrium distribution functions.

cond-mat.supr-con

Memory effects in transport through a hopping insulator: Understanding two-dip experiments

We discuss memory effects in the conductance of hopping insulators due to slow rearrangements of many-electron clusters leading to formation of polarons close to the electron hopping sites. An abrupt change in the gate voltage and corresponding shift of the chemical potential change populations of the hopping sites, which then slowly relax due to rearrangements of the clusters. As a result, the density of hopping states becomes time dependent on a scale relevant to rearrangement of the structural defects leading to the excess time dependent conductivity.

cond-mat.dis-nn

Slow relaxation of conductance of amorphous hopping insulators

We discuss memory effects in the conductance of hopping insulators due to slow rearrangements of structural defects leading to formation of polarons close to the electron hopping states. An abrupt change in the gate voltage and corresponding shift of the chemical potential change populations of the hopping sites, which then slowly relax due to rearrangements of structural defects. As a result, the density of hopping states becomes time dependent on a scale relevant to rearrangement of the structural defects leading to the excess time dependent conductivity.

cond-mat.dis-nn

Magnetotransport in low-density $p$-Si/SiGe heterostructures: From metal through hopping insulator to Wigner glass

We study DC and AC transport in low-density $p-$Si/SiGe heterostructures at low temperatures and in a broad domain of magnetic fields up to 18 T. Complex AC conductance is determined from simultaneous measurement of velocity and attenuation of a surface acoustic wave propagating in close vicinity of the 2D hole layer. The observed behaviors of DC and AC conductance are interpreted as an evolution from metallic conductance at B=0 through hopping between localized states in intermediate magnetic fields (close to the plateau of the integer quantum Hall effect corresponding to the Landau-level filling factor $ν$=1) to formation of the Wigner glass in the extreme quantum limit ($B\gtrsim 14$, $T \lesssim 0.8$ K).

cond-mat.mes-hall

Low-voltage current noise in long quantum SINIS junctions

The current noise in long SINIS junctions at low temperatures is sensitive to the population of the sub-gap states which is far from equilibrium even at low bias voltages. Nonequilibrium distribution establishes due to an interplay between voltage-driven inter-level Landau-Zener transitions and intra-level inelastic relaxation. We show that the Fano factor is enhanced drastically, being proportional to the number of times which particle can fly along the Andreev trajectory before it escapes from the level due to inelastic scattering. Combining the dc current and noise measurements one can fully characterize the non-equilibrium kinetics in SINIS junctions.

cond-mat.supr-con

Non-Gaussian dephasing in flux qubits due to 1/f-noise

Recent experiments by F. Yoshihara et al. [Phys. Rev. Lett. 97, 167001 (2006)] and by K. Kakuyanagi et al. (cond-mat/0609564) provided information on decoherence of the echo signal in Josephson-junction flux qubits at various bias conditions. These results were interpreted assuming a Gaussian model for the decoherence due to 1/f noise. Here we revisit this problem on the basis of the exactly solvable spin-fluctuator model reproducing detailed properties of the 1/f noise interacting with a qubit. We consider the time dependence of the echo signal and conclude that the results based on the Gaussian assumption need essential reconsideration.

cond-mat.supr-con

Point contact spectroscopy of hopping transport: effects of a magnetic field

The conductance of a point contact between two hopping insulators is expected to be dominated by the individual localized states in its vicinity. Here we study the additional effects due to an external magnetic field. Combined with the measured conductance, the measured magnetoresistance provides detailed information on these states (e.g. their localization length, the energy difference and the hopping distance between them). We also calculate the statistics of this magnetoresistance, which can be collected by changing the gate voltage in a single device. Since the conductance is dominated by the quantum interference of particular mesoscopic structures near the point contact, it is predicted to exhibit Aharonov-Bohm oscillations, which yield information on the geometry of these structures. These oscillations also depend on local spin accumulation and correlations, which can be modified by the external field. Finally, we also estimate the mesoscopic Hall voltage due to these structures.

cond-mat.mes-hall

Superharmonic Josephson relation at 0-/$π$-junction transition

Critical current was recently measured near the transition from 0 to $π$-contact in superconductor/ferromagnet/superconductor Josephson junctions. Contrary to expectations, it does not vanish at the transition point. It shows instead a tiny, though finite, minimum. The observation of fractional Shapiro steps reenforces the idea that the vanishing of the main sinusoidal term in the Josephson relation gives room to the next harmonics. Within quasiclassical approach we calculate the Josephson relation taking into account magnetic scattering. We find that the observed minimum is compatible with the value of the second harmonics expected from the theory.

cond-mat.mes-hall

1/f noise in hopping conduction: Role of multi-site aggregates

We propose a mechanism for 1/f-type noise in hopping insulators based on the multi-electron charge redistribution within the specific aggregates of the localized states located in the vicinity of the critical resistors. We predict that the noise with 1/f-type spectrum extends down to practically arbitrarily low frequencies.

cond-mat.mes-hall

Charge transfer between a superconductor and a hopping insulator

We develop a theory of the low-temperature charge transfer between a superconductor and a hopping insulator. We show that the charge transfer is governed by the coherent two-electron -- Cooper pair conversion process, time reversal reflection, where electrons tunnel into superconductor from the localized states in the hopping insulator located near the interface, and calculate the corresponding interface resistance. This process is an analog to conventional Andreev reflection process. We show that the time reversal interface resistance is accessible experimentally, and that in mesoscopic structures it can exceed the bulk hopping resistance.

cond-mat.mes-hall