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Vadym Kulichenko

Publications and source records attributed to Vadym Kulichenko.

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Giant Exfoliation Induced Magnetic Coercivity in Fe$_3$GaTe$_2$

Permanent magnets with strong anisotropy and high coercivity underpin modern information and energy technologies, yet rare-earth-free alternatives remain limited. Here, we show that thickness engineering via mechanical exfoliation induces hard magnetic behavior in the van der Waals ferromagnet Fe$_3$GaTe$_2$. Bulk crystals exhibit Curie temperatures above 350 K but negligible room-temperature coercivity. When thinned below 100 nm, the coercive field is dramatically enhanced, reaching nearly 1 T at room temperature for in-plane fields which is comparable to values of conventional hard magnets. Micromagnetic analysis reveals a crossover in magnetization reversal from domain-mediated processes in bulk samples to quasi-coherent rotation in thin flakes, driven by increased effective anisotropy and suppressed domain formation. This thickness-dependent transition enables tuning of magnetic hardness without chemical modification. Combined with high saturation magnetization and robust room-temperature performance, Fe$_3$GaTe$_2$ emerges as a promising rare-earth-free material for spintronic applications. Its layered structure further allows integration into van der Waals heterostructures, where large in-plane coercivity can stabilize magnetic states against perturbations and interlayer coupling, offering potential for high-density nonvolatile memory and domain-wall-based devices.

cond-mat.mtrl-sci

Topological Hall Effect in Antiferromagnetic Co doped Fe$_3$GaTe$_2$

Fe$_3$GaTe$_2$ is van der Waals (vdW) ferromagnet with a Curie temperature $T_C$ ranging from 350 K to 380 K, followed upon cooling by a ferrimagnetic transition near room temperature. Substituting Fe with Co was previously reported to induce antiferromagnetism (AFM) at a Co fraction dependent Neel temperature $T_N$. In this work, we confirm the overall phase diagram of the Fe$_{3-x}$Co$_x$GaTe$_2$ series as a function of $x$ and temperature via magnetization and electrical transport measurements. For $x \simeq 0.6$ the Hall effect is observed to mimic the magnetization as the AF ground state is suppressed by the external magnetic field via a metamagnetic transition, thus displaying an anomalous Hall response. At low temperatures, we also observe a pronounced topological Hall signal peaking at $\mu_0H$ = 4 T, or within the metamagnetic transition region of fields. This observation points to the presence of magnetic field-induced chiral spin textures, such as skyrmions upon approaching magnetization saturation. Magnetic force microscopy (MFM) reveals the emergence of nearly circular magnetic domains, with diameters on the order of 100 to 200 nm, within the antiferromagnetic phase. A detailed analysis of the MFM images indicates that the topological Hall effect is closely linked to the field-induced stabilization of magnetic domain structures, likely exhibiting chiral textures. This observation suggests the possible formation of skyrmions already in the AFM phase, i.e., AFM skyrmions, that evolve into ferromagnetic (FM) ones upon increasing the magnetic field. Consequently, Co-doped Fe$_3$GaTe$_2$ might provide a platform to investigate the transformation of skyrmions, initially coupled antiferromagnetically into ferromagnetic skyrmions, and to explore its impact on the topological and skyrmion Hall effects.

cond-mat.mes-hall

Terahertz field-induced giant symmetry modulations in a van der Waals antiferromagnet

Strong-field terahertz (THz) excitations enable dynamic control over electronic, lattice and symmetry degrees of freedom in quantum materials. Here, we uncover pronounced terahertz-induced symmetry modulations and coherent phonon dynamics in the van der Waals antiferromagnet MnPS3, in which inversion symmetry is broken by its antiferromagnetic spin configuration. Time-resolved second harmonic generation measurements reveal long-lived giant oscillations in the antiferromagnetic phase, with amplitudes comparable to the equilibrium signal, driven by phonons involving percent-level atomic displacements relative to the equilibrium bond lengths. The temporal evolution of the rotational anisotropy patterns indicate a dynamic breaking of mirror symmetry, modulated by two vibrational modes at 1.7 THz and 4.5 THz, with the former corresponding to a hidden mode not observed in equilibrium spectroscopy. We show that these effects arise in part from a field-induced charge rearrangement mechanism that lowers the local crystal symmetry, and couples to the phonon modes. A long-lived field-driven response was uncovered with a complex THz polarization dependence which, in comparison to theory, indicates evidence for an antiferromagnetic-to-ferrimagnetic transition. Our results establish an effective field-tunable pathway for driving excitations otherwise weak in equilibrium, and for manipulating magnetism in low-dimensional materials via dynamical modulation of symmetry.

cond-mat.str-el

Disorder driven crossover between anomalous Hall regimes in Fe$_3$GaTe$_2$

The large anomalous Hall conductivity (AHC) of the Fe$_3$(Ge,Ga)Te$_2$ compounds has attracted considerable attention. Here, we expose the intrinsic nature of AHC in Fe$_3$GaTe$_2$ crystals characterized by high conductivities, which show disorder-independent AHC with a pronounced value $\sigma_{xy}^{\text{c}}\approx$ 420 $\Omega^{-1}$cm$^{-1}$. In the low conductivity regime, we observe the scaling relation $\sigma_{xy}\propto\sigma_{xx}^{1.6}$, which crosses over to $\sigma_{xy} \simeq \sigma_{xy}^{\text{c}}$ as $\sigma_{xx}$ increases. Disorder in low-conductivity crystals is confirmed by the broadening of a first-order transition between ferromagnetism and the ferrimagnetic ground state. Through density functional theory (DFT) calculations, we reveal that the dominant sources of Berry curvature are located a few hundred meV below the Fermi energy around the $\Gamma$-point. Therefore, Fe$_3$GaTe$_2$ clearly exposes the disorder-induced crossover among distinct AHC regimes, previously inferred from measurements on different ferromagnets located in either side of the crossover region.

cond-mat.mtrl-sci

Local Inversion Symmetry Breaking and Thermodynamic Evidence for Ferrimagnetism in Fe3GaTe2

The layered compound Fe3GaTe2 is attracting attention due to its high Curie temperature, low dimensionality, and the presence of topological spin textures above room temperature, making Fe$_3$GaTe$_2$ a good candidate for applications in spintronics. Here, we show, through transmission electron microscopy (TEM) techniques, that Fe$_3$GaTe$_2$ single crystals break local inversion symmetry while maintaining global inversion symmetry according to X-ray diffraction. Coupled to the observation of N\'{e}el skyrmions via Lorentz-TEM, our structural analysis provides a convincing explanation for their presence in centrosymmetric materials. Magnetization measurements as a function of the temperature displays a sharp first-order thermodynamic phase-transition leading to a reduction in the magnetic moment. This implies that the ground state of Fe$_3$GaTe$_2$ is globally ferrimagnetic and not a glassy magnetic state composed of ferrimagnetic, and ferromagnetic domains as previously claimed. Neutron diffraction studies indicate that the ferromagnetic to ferrimagnetic transition upon reducing the external magnetic field is associated with a change in the magnetic configuration/coupling between Fe1 and Fe2 moments. We observe a clear correlation between the hysteresis observed in both the skyrmion density and the magnetization of Fe$_3$GaTe$_2$. This indicates that its topological spin textures are affected by the development of ferrimagnetism upon cooling. Observation, via magnetic force microscopy, of magnetic bubbles at the magnetic phase boundary suggests skyrmions stabilized by the competition among magnetic phases and distinct exchange interactions. Our study provides an explanation for the observation of N\'eel skyrmions in centrosymmetric systems, while exposing a correlation between the distinct magnetic phases of Fe$_3$GaTe$_2$ and topological spin textures.

cond-mat.mtrl-sci

Type-II Weyl nodes, flat bands, and evidence for a topological Hall-effect in the new ferromagnet FeCr$_3$Te$_6$

The interplay between linearly dispersing or Dirac-like, and flat electronic bands, for instance, in the kagome ferromagnets, has attracted attention due to a possible interplay between topology and electronic correlations. Here, we report the synthesis, structural, electrical, and magnetic properties of a single-crystalline ferromagnetic compound, namely Fe$_{1/3}$CrTe$_2$ or FeCr$_3$Te$_6$, which crystallizes in the $P\bar{3}m1$ space group instead of the $I2/m$ previously reported for FeCr$_2$Te$_4$. Electronic band structure calculations reveal type-II Dirac nodes and relatively flat bands near the Fermi level ($\varepsilon_F$). This compound shows onset Curie temperature $T_{\text{c}}\simeq 120$ K, followed by an additional ferromagnetic transition near $T_{\text{c2}} \sim 92.5 $ K. Below $T_{\text{c}}$, FeCr$_3$Te$_6$ displays a pronounced anomalous Hall effect, as well as sizable coercive fields that exceed $\mu_0H = 1$~T at low $T$s. However, a scaling analysis indicates that the anomalous Hall effect results from a significant intrinsic contribution, as expected from the calculations, but also from the extrinsic mechanism, i.e., scattering. The extrinsic contribution probably results from occupational disorder at the 1b Fe-site within the van der Waals gap of the CrTe$_2$ host. We also observe evidence for a topological Hall component superimposed onto the overall Hall response, suggesting the presence of chiral spin textures akin to skyrmions in this centrosymmetric system. Their possible presence will require experimental confirmation.

cond-mat.other

Direct-Write Printed Contacts to Layered and 2D Materials

Advancements in fabrication methods have shaped new computing device technologies. Among these methods, depositing electrical contacts to the channel material is fundamental to device characterization. Novel layered and two-dimensional (2D) materials are promising for next-generation computing electronic channel materials. Direct-write printing of conductive inks is introduced as a surprisingly effective, significantly faster, and cleaner method to contact different classes of layered materials, including graphene (semi-metal), MoS2 (semiconductor), Bi-2212 (superconductor), and Fe5GeTe2 (metallic ferromagnet). Based on the electrical response, the quality of the printed contacts is comparable to what is achievable with resist-based lithography techniques. These devices are tested by sweeping gate voltage, temperature, and magnetic field to show that the materials remain pristine post-processing. This work demonstrates that direct-write printing is an agile method for prototyping and characterizing the electrical properties of novel layered materials.

cs.ET