arXiv subjects

Vakhtang Chulukhadze

Publications and source records attributed to Vakhtang Chulukhadze.

At least 19 recordsLinked to original sources

arXiv2026

High-Velocity Whip-Mode Microresonator in LTOI Unimorph: Measurement Methodology and Large-Signal Characterization

This paper presents the design, characterization, and large-signal measurement methodology of a high-order whip-mode flexural microresonator on a lithium tantalate-on-insulator (LTOI) unimorph platform. A tapered cantilever concentrates kinetic energy at the free tip through a structural velocity amplification effect, with a targeted whip mode at 9.175 MHz exhibiting a measured Q of 691 in air. The results indicate a substantially reduced susceptibility to viscous damping at high modal frequencies. In-air large-signal testing on a separate device confirms tip velocities up to 20 m/s before the reliable measurement range of the laser Doppler vibrometer (LDV) at the tapered tip is exceeded, while the device itself sustains drive levels up to 240 Vpp before failure. Transitioning to vacuum reveals photothermal-induced static bending of the LTOI cantilever under LDV laser illumination, an effect that prohibits direct velocity measurement for these resonators. Hence, it motivates an indirect extraction methodology to be implemented. In this work, a 3.85 times base-to-tip geometric amplification factor, independently calibrated at low drive, is applied to base velocity measurements to infer tip velocity under large-signal conditions. Using this approach with narrowband chirp excitation, a maximum extracted tip velocity of 58.9 m/s is obtained at 192 Vpp, with spectral analysis of the base velocity placing a conservative lower bound of 36.2 m/s on this estimate. Large-signal failure-mode analysis identifies Pt/Au electrode melting at 210 Vpp as the current velocity ceiling. These results suggest that geometric amplification in high-order flexural modes offers a viable pathway toward the high proof-mass velocities targeted for next-generation MEMS inertial sensors.

eess.SP↗

arXiv2026

Toward Ku-Band Surface Acoustic Wave Delay Lines on AlScN-on-Diamond with Decoupled Phase and Group Velocities

This work reports surface acoustic wave (SAW) acoustic delay lines (ADLs) on an aluminum scandium nitride (AlScN) on diamond platform operating in the X band and approaching the Ku band. The large acoustic-velocity contrast between the AlScN film and the diamond substrate produces a strongly dispersive Sezawa branch that decouples the phase velocity from the group velocity. Delay lines with a 1 $μ$m wavelength show a Sezawa passband at 9.55 GHz with a fractional bandwidth of 1.05%, a propagation loss of 0.094 dB per wavelength, a propagation-limited quality factor of 465, and a group velocity of 5979 m/s, while co-fabricated resonators give a phase velocity of 9560 m/s, a ratio of about 1.6. Scaling the wavelength to 0.5 $μ$m moves the passband to 16.5 GHz with a fractional bandwidth of 0.7%. The platform therefore reaches an operating frequency about 1.5 times higher than AlScN on sapphire at the same lithographic pitch while preserving group delay per unit length.

eess.SP↗

arXiv2026

Bimorph Lithium Niobate Thickness-Shear Overtone Film Bulk Acoustic Resonator

High quality factor ($Q$) and overtone operation enable narrow-linewidth acoustic devices with multiple discrete frequencies in a single cavity. Maintaining both high $Q$ and sufficient electromechanical coupling at higher mode orders remains challenging. Here, we demonstrate a bimorph periodically poled piezoelectric film (P3F) lithium niobate (LN) platform for high-order thickness-shear (TS) overtone excitation. The device comprises a bonded 80-$μ$m-thick single-crystal X-cut LN bimorph with opposite polarizations, patterned top and floating bottom electrodes, and a suspended air cavity. The P3F configuration mitigates charge cancellation from the alternating stress distribution of higher-order TS modes, enabling measurable coupling across a broad sequence of overtones. The thick LN acoustic cavity and increasingly confined high-order mode profiles support low-loss operation. Measured TS overtones extend to 1.75 GHz. At room temperature, representative overtones at 0.77 and 0.89 GHz exhibit 3-dB $Q$ values of 11,338 and 11,917, corresponding to $fQ$ products of $8.74\times10^{12}$ and $1.06\times10^{13}$ Hz, respectively. Cooling from 297 to 12 K systematically enhances $Q$, yielding a peak 3-dB $Q$ of 20,507 at 779 MHz and a maximum $fQ$ product of $1.98\times10^{13}$ Hz at 1.379 GHz. These results establish bimorph P3F LN as a promising platform for high-$Q$, frequency-scalable micro-acoustic resonators in the sub-GHz and low-GHz regimes.

physics.app-ph↗

arXiv2026

Spurious-Free Lithium Niobate Bulk Acoustic Wave Resonator with Grounded-Ring Electrode

High-performance piezoelectric resonators are promising energy storage elements for piezoelectric power conversion due to their compact footprint and low loss at frequencies where conventional magnetic components become bulky and inefficient. However, their practical use is often limited by the trade-off between a high electromechanical coupling coefficient (k^2) for wide-band operation and the emergence of spurious acoustic modes that limit the resonators' inductive bandwidth. This work reports a spurious-free thickness-extensional (TE)-mode bulk acoustic wave (BAW) resonator in single-crystal lithium niobate (LN) based on a grounded-ring electrode architecture. The proposed structure is analyzed through simulation and experimentally validated using electrical characterization and laser Doppler vibrometry (LDV). The results show that the grounded ring modifies the effective boundary conditions of the acoustic device, enabling a piston-like modal response that suppresses lateral spurious modes across the inductive band. The demonstrated device operates at 10.14 MHz and achieves an electromechanical coupling coefficient of 29.6%, a maximum in-band Bode quality factor (Q_Bode) of 5230, and a figure of merit (FoM, Q*k^2) of 1548. These results establish the grounded-ring TE-mode LN BAW resonator as a practical platform for piezoelectric power conversion and a broader design approach for realizing high-performance spurious-free acoustic resonators.

eess.SY↗

arXiv2026

Bimorph Lithium Niobate Piezoelectric Micromachined Ultrasonic Transducers

Piezoelectric micromachined ultrasonic transducers (PMUTs) are widely utilized in applications that demand mechanical resilience, thermal stability, and compact form factors. Recent efforts have sought to demonstrate that single-crystal lithium niobate (LN) is a promising PMUT material platform, offering high electromechanical coupling (k2) and bidirectional performance. In addition, advances in LN film transfer technology have enabled high quality periodically poled piezoelectric films (P3F), facilitating a bimorph piezoelectric stack without intermediate electrodes. In this work, we showcase a bimorph PMUT incorporating a mechanically robust, 20 $μ$m thick P3F LN active layer. We establish the motivation for LN PMUTs through a material comparison, followed by extensive membrane geometry optimization and subsequent enhancement of the PMUT's k2. We demonstrate a 775 kHz flexural mode device with a quality factor (Q) of 200 and an extracted k2 of 6.4\%, yielding a high transmit efficiency of 65 nm/V with a mechanically robust active layer. We leverage the high performance to demonstrate extreme-temperature resilience, showcasing stable device operation up to 600 $^\circ$C and survival up to 900 $^\circ$C, highlighting LN's potential as a resilient PMUT platform.

cond-mat.mtrl-sci↗

arXiv2026

50 GHz Piezoelectric Acoustic Filter

This paper presents significant frequency scaling of acoustic filter technology to 50 GHz. This achievement is enabled by the P3F LiNbO3 multilayer stack, in which piezoelectric thin-films of alternating orientations are transferred in sequence, thereby allowing efficient exploitation of high-order modes with high quality factor (Q) and coupling coefficient (k2) in a thicker piezoelectric stack. The demonstrated filter is comprised of twelfth-order symmetric (S12) mode lateral-field-excited bulk acoustic wave resonators (XBARs), built on a 4-layer periodically poled piezoelectric (P3F) 128 Y-cut lithium niobate (LiNbO3) stack. The filter exhibits 3.3 dB insertion loss (IL) and a fractional bandwidth (FBW) of 2.9%. The miniature design, with a footprint of 0.36 mm2, makes it promising for future wireless front-end applications. These results represent the highest frequency acoustic filters reported to date, setting a new benchmark in piezoelectric filter technology. Upon further development, the platform could enable filters further into the FR2 range, essential for next-generation communication systems.

eess.SP↗

arXiv2026

Phononic Combs in Lithium Niobate Acoustic Resonators

Frequency combs consist of a spectrum of evenly spaced spectral lines. Optical frequency combs enable technologies ranging from timing, LiDAR, and ultra-stable signal sources. Microwave frequency combs are analogous to optical frequency combs, but often leverage electronic nonlinearity for comb generation. Generating microwave frequency combs using piezoelectric mechanical resonators would enable this behavior in a more compact form factor, thanks to the shorter acoustic wavelengths. In this work, we demonstrate a microwave frequency comb leveraging thermal nonlinearity in high quality factor ($Q$) overmoded acoustic resonators in thin film lithium niobate. By providing input power at 257 MHz, which is the sum frequency of two acoustic modes at 86 MHz and 171 MHz, we generate parametric down conversion and comb generation. We explore the nonlinear mixing regimes and the associated conditions for comb generation. Comb spacing is observed to vary significantly with drive frequency and power, and its general behavior is found to rely heavily on initial conditions. This demonstration showcases the potential for further improvement in compact and efficient microwave frequency combs, leveraging nonlinear acoustic resonators.

physics.app-ph↗

arXiv2026

19.3 GHz Acoustic Filter with High Close-in Rejection in Tri-layer Thin-Film Lithium Niobate

Acoustic filters are preferred front-end solutions at sub-6 GHz due to their superior frequency selectivity compared to electromagnetic (EM) counterparts. With the ongoing development of 5G and the evolution toward 6G, there is a growing need to extend acoustic filter technologies into frequency range 3 (FR3), which spans 7 to 24 GHz to accommodate emerging high-frequency bands. However, scaling acoustic filters beyond 10 GHz presents significant challenges, as conventional platforms suffer from increased insertion loss (IL) and degraded out-of-band (OoB) rejection at higher frequencies. Recent innovations have led to the emergence of periodically poled piezoelectric lithium niobate (P3F LN) laterally excited bulk acoustic resonators (XBARs), offering low-loss and high electromechanical coupling performance above 10 GHz. This work presents the first tri-layer P3F LN filter operating at 19.3 GHz, achieving a low IL of 2.2 dB, a 3-dB fractional bandwidth (FBW) of 8.5%, and an impressive 49 dB close in rejection. These results demonstrate strong potential for integration into FR3 diplexers.

eess.SP↗

arXiv2026

62.6 GHz ScAlN Solidly Mounted Acoustic Resonators

We demonstrate a record-high 62.6 GHz solidly mounted acoustic resonator (SMR) incorporating a 67.6 nm scandium aluminum nitride (Sc0.3Al0.7N) piezoelectric layer on a 40 nm buried platinum (Pt) bottom electrode, positioned above an acoustic Bragg reflector composed of alternating SiO2 (28.2 nm) and Ta2O5 (24.3 nm) layers in 8.5 pairs. The Bragg reflector and piezoelectric stack above are designed to confine a third-order thickness-extensional (TE) bulk acoustic wave (BAW) mode, while efficiently transducing with thickness-field excitation. The fabricated SMR exhibits an extracted piezoelectric coupling coefficient (k2) of 0.8% and a maximum Bode quality factor (Q) of 51 at 63 GHz, representing the highest operating frequency reported for an SMR to date. These results establish a pathway toward mmWave SMR devices for filters and resonators in next-generation RF front ends.

eess.SP↗

arXiv2025

Practical Demonstrations of FR3-Band Thin-Film Lithium Niobate Acoustic Filter Design

This article presents an approach to control the operating frequency and fractional bandwidth (FBW) of miniature acoustic filters in thin-film lithium niobate (TFLN). More specifically, we used first-order antisymmetric (A1) mode lateral-field-excited bulk acoustic wave resonators (XBARs) to achieve efficient operation at 20.5 GHz. Our technique leverages the thickness-dependent resonant frequency of A1 XBARs, combined with the in-plane anisotropic properties of 128$^\circ$ Y-cut TFLN, to customize filter characteristics. The implemented three-element ladder filter prototype achieves an insertion loss (IL) of only 1.79 dB and a controlled 3-dB FBW of 8.58% at 20.5 GHz, with an out-of-band (OoB) rejection greater than 14.9 dB across the entire FR3 band, while featuring a compact footprint of 0.90 $\times$ 0.74 mm2. Moreover, an eight-element filter prototype shows an IL of 3.80 dB, an FBW of 6.12% at 22.0 GHz, and a high OoB rejection of 22.97 dB, demonstrating the potential for expanding to higher-order filters. As frequency allocation requirements become more stringent in future FR3 bands, our technique showcases promising capability in enabling compact and monolithic filter banks toward next-generation acoustic filters for 6G and beyond.

eess.SP↗

arXiv2025

High-Q Millimeter-Wave Acoustic Resonators in Thin-Film Lithium Niobate Using Higher-Order Antisymmetric Modes

This letter presents miniature millimeter wave (mmWave, above 30 GHz) acoustic resonators based on a single-layer thin-film lithium niobate (LN) platform. More specifically, we present high performance third-order antisymmetric (A3) mode laterally excited bulk acoustic resonators (XBAR). Compared to prior demonstrations, the proposed platform features a compact footprint due to a smaller lateral wavelength and aperture. We showcase an A3 mode device operating at 39.8 GHz with a high extracted electromechanical coupling (k^2) of 4%, a high 3-dB series resonance quality factor (Q_s) of 97, and a high 3-dB anti-resonance quality factor (Q_p) of 342, leading to a figure of merit (FoM=k^2*Q_p) of 13.7 with a footprint of 32x44 micron^2. To demonstrate frequency scalability, the piezoelectric film thickness is varied while keeping the device layout. As a result, we present a multitude of high-performance devices covering a wide frequency range of 30-50 GHz, validating the proposed XBAR design at mmWave.

physics.app-ph↗

arXiv2025

Acoustic resonators above 100 GHz

Piezoelectric resonators are a common building block for signal processing because of their miniature size, low insertion loss, and high quality factor. As consumer electronics push to millimeter waves frequencies, designers must increase the operating frequency of the resonator. The current state-of-the-art approach to increase the operating frequency is to decrease the thickness of the piezoelectric film to shorten the acoustic wavelength or to use higher order modes. Unfortunately, maintaining high crystal quality typically requires thicker piezoelectric layers. Thinner layers suffer from higher defect densities and increased surface damping, which degrade the electromechanical coupling and quality factor. While acoustic high order modes can also increase operating frequency, the electromechanical coupling rapidly decreases with increasing mode number. Here, we overcome these limitations by utilizing a piezoelectric stack of three layers of lithium niobate with alternating crystallographic orientations to preferentially support higher order modes and thereby enhance the electromechanical coupling without degrading the quality factor. Our approach improves the figure of merit of millimeter-wave acoustic resonators by roughly an order of magnitude greater compared to state-of-the-art piezoelectric resonators above 60 GHz. This concept of alternating crystallographic orientations facilitates a new path to develop millimeter wave resonators with high figures of merit, low insertion loss, and miniature footprints, enabling new applications in millimeter wave signal processing and computing.

physics.app-ph↗

arXiv2025

Thin-film scandium aluminum nitride bulk acoustic resonator with high Q of 208 and K2 of 9.5% at 12.5 GHz

This work describes sputtered scandium aluminum nitride (ScAlN) thin-film bulk acoustic resonators (FBAR) at 12.5 GHz with high electromechanical coupling (k2) of 9.5% and quality factor (Q) of 208, resulting in a figure of merit (FoM, Qk2) of 19.8. ScAlN resonators employ a stack of 90 nm thick 20% Sc doping ScAlN piezoelectric film on the floating bottom 38 nm thick platinum (Pt) electrode to achieve low losses and high coupling toward centimeter wave (cmWave) frequency band operation. Three fabricated and FBARs are reported, show promising prospects of ScAlN-Pt stack towards cmWave front-end filters.

physics.app-ph↗

arXiv2025

Lithium Tantalate Bulk Acoustic Resonator For Piezoelectric Power Conversion

We present the first lithium tantalate (LT) thickness-extensional (TE) mode bulk acoustic resonators designed for piezoelectric power conversion, showcasing a low temperature coefficient of frequency (TCF) of -13.56 ppm/K. These resonators also exhibit high quality factors (Q) of 1698, and electromechanical coupling coefficients ($k^2$) of 8.8%, making them suitable for efficient power conversion applications. A grounded ring structure is leveraged for spurious mode-free response and figure of merit (FoM=$k^2 \times Q$) enhancement near the series resonance. The temperature dependency of Q and $k^2$ is experimentally tested over a wide temperature range, from $25^{\circ}\text{C}$ to $130^{\circ}\text{C}$, demonstrating the resonators thermal stability and consistent performance under varying conditions. This work highlights the potential of LT resonators in the future development of thermally stable power electronic systems, enabling more reliable and efficient piezoelectric power converters.

physics.app-ph↗

arXiv2024

Low-Loss Higher-Order Cross-Sectional Lamé Mode SAW Devices in 10-20 GHz Range

This paper presents surface acoustic wave (SAW) acoustic delay lines (ADL) for studying propagation loss mechanisms in Lithium Niobate (LN). Devices were fabricated by depositing 50 nm aluminum patterns on 600 nm X-Cut LN on amorphous silicon on silicon carbide, where longitudinally dominant SAW was targeted. Upon fabrication, higher-order thickness-based cross-sectional Lamé modes and Rayleigh modes were studied for their Q factors using acoustic delay lines. Utilizing bi-directional electrodes, ADL with lateral lambda values ranging from 0.4 um to 0.6 um were measured. Higher order Lame modes were found to have consistently higher Q factors than their Rayleigh mode counterpart, on the order of 1000-3000, showing high-frequency SAW devices as still viable candidates for frequency scaling without a substantial increase in loss.

physics.app-ph↗

arXiv2024

Lithium Niobate Resonators for Power Conversion: Spurious Mode Suppression Via an Active Ring

In an effort to shift the paradigm of power conversion, acoustic resonators pose as compact alternatives for lossy magnetic inductors. Currently, the acoustic resonator's restricted inductive region between its series and parallel resonances constitutes a major bottleneck, which is further diminished due to spurious modes. Prior work has partially addressed this issue by the introduction of various design guidelines tailored to the material and the mode of interest, but can only provide a limited spurious-free region. Alternatively, a separated grounded ring on LN operating in the first order symmetric lamb mode (S1), maintains optimal device performance with a large fractional spurious mode suppressed region, but has been shown to experience voltage breakdown at high power near the ring at different potentials. Hence, we propose a new spurious mode suppressing design leveraging a thickened active ring in lithium niobate (LN), maintaining high Q and k2 while also reducing resistance at resonance (Rr), and mitigating breakdown effects.

physics.app-ph↗

arXiv2024

23.8-GHz Acoustic Filter in Periodically Poled Piezoelectric Film Lithium Niobate With 1.52-dB IL and 19.4% FBW

This paper reports the first piezoelectric acoustic filter in periodically poled piezoelectric film (P3F) lithium niobate (LiNbO3) at 23.8 GHz with low insertion loss (IL) of 1.52 dB and 3-dB fractional bandwidth (FBW) of 19.4%. The filter features a compact footprint of 0.64 mm2. The third-order ladder filter is implemented with electrically coupled resonators in 150 nm bi-layer P3F 128 rotated Y-cut LiNbO3 thin film, operating in second-order symmetric (S2) Lamb mode. The record-breaking performance is enabled by the P3F LiNbO3 platform, where piezoelectric thin films of alternating orientations are transferred subsequently, facilitating efficient higher-order Lamb mode operation with simultaneously high quality factor (Q) and coupling coefficient (k2) at millimeter-wave (mmWave). Also, the multi-layer P3F stack promises smaller footprints and better nonlinearity than single-layer counterparts, thanks to the higher capacitance density and lower thermal resistance. Upon further development, the reported P3F LiNbO3 platform is promising for compact filters at mmWave.

physics.app-ph↗

arXiv2024

2 to 16 GHz Fundamental Symmetric Mode Acoustic Resonators in Piezoelectric Thin-Film Lithium Niobate

As 5G connectivity proliferates, signal processing applications at 6G centimeter bands have gained attention for urban wireless capacity expansion. At sub-5 GHz, acoustic resonators operating in the fundamental symmetric (S0) Lamb mode hold significant promise if frequency scaled to the 6G centimeter bands. Concurrently, the lateral wavelength dependency and the traveling wave nature of S0 mode enable monolithic multi-frequency fabrication, transversal filters, correlators, and other compact signal processing components. In this work, we present thin-film lithium niobate (LN) S0 resonators scaled up to 16 GHz. Specifically, we study the characteristics of the S0 mode as the wavelength is minimized and showcase a device at 14.9 GHz with a Bode Q maximum of 391, a k2 of 6%, and a figure of merit (FoM) of 23.33, surpassing the state-of-the-art (SoA) in its frequency range.

physics.app-ph↗