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Valanoor Nagarajan

Publications and source records attributed to Valanoor Nagarajan.

4 recordsLinked to original sources

Auto-3DPFM: Automating Polarization-Vector Mapping at the Nanoscale

The functional properties of ferroelectric materials are strongly influenced by ferroelectric polarization orientation; as such, access to consistent and precise characterization of polarization vectors is of substantial importance to ferroelectrics research. Here, we develop a fully automated three-dimensional piezoresponse force microscopy (Auto-3DPFM) technique automating all essential steps in interferometric PFM for 3D polarization vector characterization, including laser alignment, tip calibration and approach, image acquisition, polarization vector reconstruction, and visualization. The automation reduces the experimental burden of ferroelectric polarization vector characterization, while the back-and-forth calibration ensures consistency and reproducibility of 3D polarization reconstruction. An algorithmic workflow is also developed to identify domain walls and calculate their characteristic angles via a spatial vector-angle-difference method, presenting one unique capability enabled by Auto-3DPFM that is not accessible with traditional PFM techniques. Beyond representing a significant step forward in 3D polarization mapping, Auto-3DPFM promises to accelerate discovery via high-throughput and autonomous characterization in ferroelectric materials research. When integrated with machine learning and adaptive sampling strategies in self-driving labs, Auto-3DPFM will serve as a valuable tool for advancing ferroelectric physics and microelectronics development.

cond-mat.mtrl-sci

Super-R BiFeO$_3$: Epitaxial stabilization of a low-symmetry phase with giant electromechanical response

Piezoelectrics interconvert mechanical energy and electric charge and are widely used in actuators and sensors. The best performing materials are ferroelectrics at a morphotropic phase boundary (MPB), where several phases can intimately coexist. Switching between these phases by electric field produces a large electromechanical response. In the ferroelectric BiFeO$_3$, strain can be used to create an MPB-like phase mixture and thus to generate large electric field dependent strains. However, this enhanced response occurs at localized, randomly positioned regions of the film, which potentially complicates nanodevice design. Here, we use epitaxial strain and orientation engineering in tandem - anisotropic epitaxy - to craft a hitherto unavailable low-symmetry phase of BiFeO$_3$ which acts as a structural bridge between the rhombohedral-like and tetragonal-like polymorphs. Interferometric displacement sensor measurements and first-principle calculations reveal that under external electric bias, this phase undergoes a transition to the tetragonal-like polymorph, generating a piezoelectric response enhanced by over 200%, and associated giant field-induced reversible strain. These results offer a new route to engineer giant electromechanical properties in thin films, with broader perspectives for other functional oxide systems.

cond-mat.mtrl-sci

A multiferroic on the brink: uncovering the nuances of strain-induced transitions in BiFeO$_3$

Bismuth ferrite (BiFeO$_3$) is one of the very few known single-phase multiferroic materials. While the bulk compound is rhombohedral (R), the discovery of an epitaxial strain-induced structural transition into a so-called 'super tetragonal-phase' (T-phase) in this material incited a flurry of research activity focused on gaining an understanding of this phase transition and its possible functionalities. This metastable phase of BiFeO$_3$ is also multiferroic, with giant ferroelectric polarization and coexisting antiferromagnetic order, but above all it is the strain relaxation-induced phase mixtures and their outstanding piezoelectric and magnetoelectric responses which continue to intrigue and motivate the physicist and materials scientist communities. Here, we review the research into the T-phase and mixed-phase BiFeO$_3$ system. We begin with a brief summary of the history of the T-phase and an analysis of the structure of the various phases reported in the literature. We then address important questions regarding the symmetry and octahedral rotation patterns and the (as yet underexplored) important role of chemistry in the formation of the metastable T-phase. We follow by describing the phase transitions in this material, and how these may hold promise for large magnetoelectric responses. Finally we point out some experimental challenges inherent to the study of such a system, and potential pathways for how they may be overcome. It is our intention with this work to highlight important issues that, in our opinion, should be carefully considered by the community in order to use this fascinating materials system for a new paradigm of functionality.

cond-mat.mtrl-sci

Defect thermodynamics and kinetics in thin strained ferroelectric films: the interplay of possible mechanisms

We present a theoretical description of the influence of misfit strain on mobile defects dynamics in thin strained ferroelectric films. Self-consistent solutions obtained by coupling the Poissons equation for electric potential with continuity equations for mobile donor and electron concentrations and time-dependent Landau-Ginzburg-Devonshire equations reveal that the Vegard mechanism (chemical pressure) leads to the redistribution of both charged and electro-neutral defects in order to decrease the effective stress in the film. Internal electric fields, both built-in and depolarization ones, lead to a strong accumulation of screening space charges (charged defects and electrons) near the film interfaces. Importantly, the corresponding screening length is governed by the misfit strain and Vegard coefficient. Mobile defects dynamics, kinetics of polarization and electric current reversal are defined by the complex interplay between the donor, electron and phonon relaxation times, misfit strain, finite size effect and Vegard stresses.

cond-mat.mtrl-sci