arXiv subjects

Valentin Alek Dediu

Publications and source records attributed to Valentin Alek Dediu.

4 recordsLinked to original sources

arXiv2025

Light-driven modulation of proximity-enhanced functionalities in hybrid nano-scale systems

Advancing quantum information and communication technology (qICT) requires smaller and faster components with actively controllable functionalities. This work presents a novel strategy for dynamically modulating magnetic properties via proximity effects controlled by light. We demonstrate this concept using hybrid nanoscale systems composed of C60 molecules proximitized to a cobalt metallic ferromagnetic surface, where proximity interactions are particularly strong. Our findings show that by inducing excitons in the C60 molecules with resonant ultrashort light pulses, we can significantly modify the interaction at the cobalt/C60 interface, leading to a striking 60% transient shift in the frequency of the dipolar ferromagnetic resonance mode of the Cobalt. This effect, detected via a specifically designed time-resolved magneto-optical Kerr effect (tr-MOKE) experiment, persists on a timescale of hundreds of picoseconds. Since this frequency shift directly correlates with a transient change in the anisotropy field (an essential parameter for technological applications) our findings establish a new paradigm for ultrafast optical control of magnetism at the nanoscale.

cond-mat.other↗

arXiv2019

Controlling magnetoresistance by oxygen impurities in Mq3-based molecular spin valves

The understanding of magnetoresistance (MR) in organic spin valves (OSVs) based on molecular semiconductors is still incomplete after its demonstration more than a decade ago. While carrier concentration may play an essential role in spin transport in these devices, direct experimental evidence of its importance is lacking. We probed the role of charge carrier concentration by studying the interplay between MR and multilevel resistive switching in OSVs. The present work demonstrates that all salient features of these devices, particularly the intimate correlation between MR and resistance, can be accounted for by the impurity band model, based on oxygen migration. Finally, we highlight the critical importance of carrier concentration in determining spin transport and MR in OSVs and the role of interface-mediated oxygen migration in controlling the OSVs response.

physics.app-ph↗

arXiv2013

A novel picture for charge transport interpretation in epitaxial manganite thin films

Transport characterizations of epitaxial La0.7Sr0.3MnO3 thin films in the thickness range 5-40 nm and 25-410 K temperature interval have been accurately collected. We show that taking into account polaronic effects allows to achieve the best ever fitting of the transport curves in the whole temperature range. The Current Carriers Density Collapse picture accurately accounts for the properties variation across the metal-insulator-transition. The electron-phonon coupling parameter estimations are in a good agreement with theoretical predictions. The results promote a clear and straightforward quantitative description of the manganite films involved in charge transport device applications.

cond-mat.str-el↗

arXiv2012

Conditions for the growth of smooth La0.7Sr0.3MnO3 thin films by pulsed electron ablation

We report on the optimisation of the growth conditions of manganite La0.7Sr0.3MnO3 (LSMO) thin films prepared by Channel Spark Ablation (CSA). CSA belongs to pulsed electron deposition methods and its energetic and deposition parameters are quite similar to those of pulsed laser deposition. The method has been already proven to provide manganite films with good magnetic properties, but the films were generally relatively rough (a few nm coarseness). Here we show that increasing the oxygen deposition pressure with respect to previously used regimes, reduces the surface roughness down to unit cell size while maintaining a robust magnetism. We analyse in detail the effect of other deposition parameters, like accelerating voltage, discharging energy, and temperature and provide on this basis a set of optimal conditions for the growth of atomically flat films. The thicknesses for which atomically flat surface was achieved is as high as about 10-20 nm, corresponding to films with room temperature magnetism. We believe such magnetic layers represent appealing and suitable electrodes for various spintronic devices.

cond-mat.mtrl-sci↗