arXiv subjects

Valeria Lauter

Publications and source records attributed to Valeria Lauter.

At least 19 recordsLinked to original sources

arXiv2026

Proximity Magnetism in Mn(Bi,Sb)2Te4-(Bi,Sb)2Te3/MnTe Natural Heterostructures

Magnetic topological insulators and their heterostructures provide great opportunities in coupling band topology with nontrivial spin configuration for enhanced spintronic device performance as well as designing totally new magnetoelectric systems and functionalities. We find that Mn interdiffusion from MnTe when interfaced with (Bi,Sb)2Te3 stabilizes as self-organized Mn(Bi,Sb)2Te4 septuple lamellae amongst alternating (Bi,Sb)2Te3 quintuple layers, as observed using scanning transmission electron microscopy and depth-sensitive polarized neutron reflectometry. We further demonstrate a valuable combination of magnetic and topological orders in these naturally formed Mn(Bi,Sb)2Te4-(Bi,Sb)2Te3 heterostructures that are exchange coupled with MnTe. Magnetotransport experiments and quantum magnetism simulations reveal that, above its own Neel temperature TN of 20 K, Mn(Bi,Sb)2Te4 mediates the exchange field leading to an anomalous Hall effect at the (Bi,Sb)2Te3/MnTe interface, with an enhanced interfacial TN exceeding 200 K. This novel magnetic interface in turn allows a robust and deterministic spin-orbit torque switching without an external magnetic field at a low critical current density of 300 kA cm-2. The antiferromagnetically coupled architecture of Mn(Bi,Sb)2Te4-(Bi,Sb)2Te3/MnTe, featuring unique magnetic and topological proximity effects across a chalcogenide backbone, is rich in fundamental interface physics and holds potential for practical applications in spintronics.

cond-mat.mtrl-sci↗

arXiv2026

Conductivity scaling of the anomalous Hall effect in the altermagnetic semiconductor α-MnTe

α-MnTe is a prototypical altermagnet exhibiting a strong anomalous Hall effect (AHE), despite having a nearly vanishing magnetization. Lately, sample-to-sample variations of the amplitude of the AHE have raised concerns of a possible defect related origin, especially in thin films. Here, we study the AHE in α-MnTe films grown on SrF2 that have the crystal structure and m'm'm magnetic point group symmetry expected for bulk. By studying the scaling of the AHE with conductivity for those films and previously reported measurements in the literature, we find that sample-to-sample variations are well explained by a scaling law consistent with a hopping origin. Importantly, a comparison with other magnetic semiconductors reveals the colossal amplitude of the AHE of α-MnTe compared to its measured spontaneous magnetization from magnetometry and polarized neutron reflectivity. Our findings address the important fundamental question of the origin of the AHE of α-MnTe and further demonstrate the potential of altermagnets as promising spintronic materials.

cond-mat.str-el↗

arXiv2026

Anisotropy-driven interfacial magnetism in Ru-deficient SrRuO$_3$ thin films

While stoichiometric SrRuO$_3$ (SRO) is a metallic itinerant ferromagnet with relatively homogeneous magnetization, Ru deficiency provides a powerful route to alter its electronic transport and depth-dependent magnetic properties. Ru-deficient SRO thin films grown by radio-frequency high oxygen pressure sputtering were investigated using a combination of X-ray reflectivity, polarized neutron reflectometry, off-specular neutron scattering, scanning transmission electron microscopy with energy-dispersive X-ray spectroscopy, electrical transport, and magnetometry. Structural and compositional analyses reveal that Ru deficiency is intrinsic to the films, with an enhanced deficiency at the interfaces. As a result, coherent electronic transport is suppressed and the saturation magnetization is reduced, while the Curie temperature remains largely unaffected, placing Ru-deficient SRO in a regime consistent with ferromagnetic insulator-like behavior. Depth- and lateral-resolved magnetic measurements further show that the interfacial regions remain ferromagnetic but exhibit enhanced perpendicular magnetic anisotropy, which constrains the local magnetization to remain predominantly out-of-plane and strongly reduces its in-plane projection. Our results establish Ru deficiency as a key control parameter governing transport, magnetization, and anisotropy in SRO thin films and highlight defect and interface engineering as powerful routes to tailor interfacial magnetism in correlated oxide heterostructures.

cond-mat.mtrl-sci↗

arXiv2026

Emergence of unconventional magnetic order in strain-engineered RuO2/TiO2 superlattices

The spin ordering in RuO2 remains a highly debated topic, owing to its elusive nature, with reports ranging from a nonmagnetic ground state to signatures of unconventional magnetic order. Here we provide the first unambiguous, and direct evidence of unconventional magnetism in epitaxial, fully strained RuO2/TiO2 superlattices on TiO2 (110) substrate grown by hybrid molecular beam epitaxy. Polarized neutron reflectometry reveals a finite magnetic moment localized within the compressively strained RuO2 layers, consistent with predictions obtained from first-principles calculations. Complementary density functional theory and X-ray photoemission spectroscopy show that epitaxial strain drives the Ru 4d states toward the Fermi level, triggering a Stoner-type instability that stabilizes non-compensated magnetic order. These unique results reveal that RuO2 exhibits unconventional magnetic states under epitaxial strain, which are not accessible in bulk and establish strain engineering as a powerful route to uncover and control magnetic phases in RuO2 and related oxides.

cond-mat.mtrl-sci↗

arXiv2025

Non-Altermagnetic Origin of Exchange Bias Behaviors in Incoherent RuO$_2$/Fe Bilayer Heterostructures

Initially identified as a promising altermagnetic (AM) candidate, rutile RuO$_2$ has since become embroiled in controversy due to contradictory findings of modeling and measurements of the magnetic properties of bulk crystals and thin films. For example, despite observations of a bulk non-magnetic state using density functional theory, neutron scattering, and muon spin resonance measurements, patterned RuO$_2$ Hall bars and film heterostructures display magnetotransport signatures of magnetic ordering. Among the characteristics routinely cited as evidence for AM is the observation of exchange bias (EB) in an intimately contacted Fe-based ferromagnetic (FM) layer, which can arise due to interfacial coupling with a compensated antiferromagnet. Within this work, the origins of this EB coupling in Ru-capped RuO$_2$/Fe bilayers are investigated using polarized neutron diffraction, polarized neutron reflectometry, cross-sectional transmission electron microscopy, and super conducting quantum interference device measurements. These experiments reveal that the EB behavior is driven by the formation of an iron oxide interlayer containing Fe$_3$O$_4$ that undergoes a magnetic transition and pins interfacial moments within Fe at low temperature. These findings are confirmed by comparable measurements of Ni-based heterostructures, which do not display EB coupling, as well as magnetometry of additional Fe/Ru bilayers that display oxide-driven EB coupling despite the absence of the epitaxial RuO$_2$ layer. While these results do not directly refute the possibility of AM ordering in RuO$_2$ thin films, they reveal that EB, and related magnetotransport phenomena, cannot alone be considered evidence of this characteristic in the rutile structure due to interfacial chemical disorder.

cond-mat.mtrl-sci↗

arXiv2025

Enhanced Ferromagnetism in Monolayer Cr2Te3 via Topological Insulator Coupling

Exchange-coupled interfaces are pivotal in exploiting two-dimensional (2D) ferromagnetism. Due to the extraordinary correlations among charge, spin, orbital and lattice degrees of freedom, layered magnetic transition metal chalcogenides (TMCs) bode well for exotic topological phenomena. Here we report the realization of wafer-scale Cr2Te3 down to monolayer (ML) on insulating SrTiO3(111) and/or Al2O3(001) substrates using molecular beam epitaxy. Robust ferromagnetism persists in the 2D limit. In particular, the Curie temperature TC of 2 ML Cr2Te3 increases from 100 K to ~ 120 K when proximitized to topological insulator (TI) (Bi,Sb)2Te3, with substantially boosted magnetization as observed via polarized neutron reflectometry. Our experiments and theory strongly indicate that the Bloembergen-Rowland interaction is likely universal underlying TC enhancement in TI-coupled magnetic heterostructures. The topological-surface-enhanced magnetism in 2D TMC enables further exchange coupling physics and quantum hybrid studies, including paving the way to realize interface-modulated topological electronics.

cond-mat.mtrl-sci↗

arXiv2025

Interface, bulk and surface structure of heteroepitaxial altermagnetic α-MnTe films grown on GaAs(111)

Epitaxial MnTe films have recently seen a spur of research into their altermagnetic semiconducting properties. However, those properties may be extremely sensitive to structural and chemical modifications. We report a detailed investigation of the synthesis of the altermagnet α-MnTe on GaAs(111) which reveals the bulk defect structure of this material, the mechanism by which it releases strain from the underlying substrate and the impact of oxidation on its surface. X-ray diffraction measurements show that α-MnTe layers with thicknesses spanning 45nm to 640nm acquire lattice parameters different from bulk mostly due to thermal strain caused by the substrate rather than strain from the lattice mismatch. Through high resolution transmission electron microscopy (TEM) measurement, we then unveil a misfit dislocation array at the interface, revealing the mechanism by which lattice strain is relaxed. TEM also reveals a stacking fault in the bulk, occurring along a glide plane parallel to the interface. The combination of TEM with polarized neutron reflectometry measurements finally reveals the impact of oxidation on the chemistry of the surface of uncapped MnTe. Our findings highlight the subtle role of epitaxy in altering the structure of α-MnTe providing potential opportunities to tune the altermagnetic properties of this material.

cond-mat.mtrl-sci↗

arXiv2024

Stoichiometry-induced ferromagnetism in altermagnetic candidate MnTe

The field of spintronics has seen a surge of interest in altermagnetism due to novel predictions and many possible applications. MnTe is a leading altermagnetic candidate that is of significant interest across spintronics due to its layered antiferromagnetic structure, high Neel temperature (TN ~ 310 K) and semiconducting properties. We present results on molecular beam epitaxy (MBE) grown MnTe/InP(111) films. Here, it is found that the electronic and magnetic properties are driven by the natural stoichiometry of MnTe. Electronic transport and in situ angle-resolved photoemission spectroscopy show the films are natively metallic with the Fermi level in the valence band and the band structure is in good agreement with first principles calculations for altermagnetic spin-splitting. Neutron diffraction confirms that the film is antiferromagnetic with planar anisotropy and polarized neutron reflectometry indicates weak ferromagnetism, which is linked to a slight Mn-richness that is intrinsic to the MBE grown samples. When combined with the anomalous Hall effect, this work shows that the electronic response is strongly affected by the ferromagnetic moment. Altogether, this highlights potential mechanisms for controlling altermagnetic ordering for diverse spintronic applications.

cond-mat.mtrl-sci↗

arXiv2023

Energy gap of topological surface states in proximity to a magnetic insulator

Topological surface-states can acquire an energy gap when time-reversal symmetry is broken by interfacing with a magnetic insulator. This gap has yet to be measured. Such topological-magnetic insulator heterostructures can host a quantized anomalous Hall effect and can allow the control of the magnetic state of the insulator in a spintronic device. In this work, we observe the energy gap of topological surface-states in proximity to a magnetic insulator using magnetooptical Landau level spectroscopy. We measure Pb1-xSnxSe/EuSe heterostructures grown by molecular beam epitaxy exhibiting a record mobility and low Fermi energy. Through temperature dependent measurements and theoretical calculations, we show this gap is likely due to quantum confinement and conclude that the magnetic proximity effect is weak in this system. This weakness is disadvantageous for the realization of the quantum anomalous Hall effect, but favorable for spintronic devices which require the preservation of spin-momentum locking at the Fermi level.

cond-mat.mes-hall↗

arXiv2023

Atomic-scale Modulation of Synthetic Magnetic Order in Oxide Superlattices

Atomic-scale precision control of magnetic interactions facilitates a synthetic spin order useful for spintronics, including advanced memory and quantum logic devices. Conventional modulation of synthetic spin order has been limited to metallic heterostructures that exploit RKKY interaction through a nonmagnetic metallic spacer; however, they face problems arising from Joule heating and/or electric breakdown. The practical realization and observation of a synthetic spin order across a nonmagnetic insulating spacer would lead to the development of spin-related devices with a completely different concept. Herein, we report the atomic-scale modulation of the synthetic spiral spin order in oxide superlattices composed of ferromagnetic metal and nonmagnetic insulator layers. The atomically controlled superlattice exhibit an oscillatory magnetic behavior, representing the existence of a spiral spin structure. Depth-sensitive polarized neutron reflectometry evidences modulated spiral spin structures as a function of the nonmagnetic insulator layer thickness. Atomic-scale customization of the spin state could lead the field one step further to actual spintronic applications.

cond-mat.str-el↗

arXiv2022

Strain-tunable Berry curvature in quasi-two-dimensional chromium telluride

Magnetic transition metal chalcogenides form an emerging platform for exploring spin-orbit driven Berry phase phenomena owing to the nontrivial interplay between topology and magnetism. Here we show that the anomalous Hall effect in pristine Cr2Te3 thin films manifests a unique temperature-dependent sign reversal at nonzero magnetization, resulting from the momentum-space Berry curvature as established by first-principles simulations. The sign change is strain tunable, enabled by the sharp and well-defined substrate/film interface in the quasi-two-dimensional Cr2Te3 epitaxial films, revealed by scanning transmission electron microscopy and depth-sensitive polarized neutron reflectometry. This Berry phase effect further introduces hump-shaped Hall peaks in pristine Cr2Te3 near the coercive field during the magnetization switching process, owing to the presence of strain-modulated magnetic domains. The versatile interface tunability of Berry curvature in Cr2Te3 thin films offers new opportunities for topological electronics.

cond-mat.mtrl-sci↗

arXiv2022

Discovery of a high-temperature antiferromagnetic state and transport signatures of exchange interactions in a Bi2Se3/EuSe heterostructure

Spatial confinement of electronic topological surface states (TSS) in topological insulators poses a formidable challenge because TSS are protected by time-reversal symmetry. In previous works formation of a gap in the electronic spectrum of TSS has been successfully demonstrated in topological insulator/magnetic material heterostructures, where ferromagnetic exchange interactions locally lifts the time-reversal symmetry. Here we report an experimental evidence of exchange interaction between a topological insulator Bi2Se3 and a magnetic insulator EuSe. Spin-polarized neutron reflectometry reveals a reduction of the in-plane magnetic susceptibility within a 2 nm interfacial layer of EuSe, and the combination of SQUID magnetometry and Hall measurements points to the formation of an antiferromagnetic layer with at least five-fold enhancement of Néel's temperature. Abrupt resistance changes in high magnetic fields indicate interfacial exchange coupling that affects transport in a TSS. High temperature local control of TSS with zero net magnetization unlocks new opportunities for the design of electronic, spintronic and quantum computation devices, ranging from quantization of Hall conductance in zero fields to spatial localization of non-Abelian excitations in superconducting topological qubits.

cond-mat.mes-hall↗

arXiv2022

Signatures of superconducting triplet pairing in Ni--Ga-bilayer junctions

Ni-Ga bilayers are a versatile platform for exploring the competition between strongly antagonistic ferromagnetic and superconducting phases. We characterize the impact of this competition on the transport properties of highly-ballistic Al/Al2O3(/EuS)/Ni-Ga tunnel junctions from both experimental and theoretical points of view. While the conductance spectra of junctions comprising Ni (3 nm)-Ga (60 nm) bilayers can be well understood within the framework of earlier results, which associate the emerging main conductance maxima with the junction films' superconducting gaps, thinner Ni (1.6 nm)-Ga (30 nm) bilayers entail completely different physics, and give rise to novel large-bias (when compared to the superconducting gap of the thin Al film as a reference) conductance-peak subseries that we term conductance shoulders. These conductance shoulders might attract considerable attention also in similar magnetic superconducting bilayer junctions, as we predict them to offer an experimentally well-accessible transport signature of superconducting triplet pairings that are induced around the interface of the Ni-Ga bilayer. We further substantiate this claim performing complementary polarized neutron reflectometry measurements on the bilayers, from which we deduce (1) a nonuniform magnetization structure in Ga in a several nanometer-thick area around the Ni-Ga boundary and can simultaneously (2) satisfactorily fit the obtained data only considering the paramagnetic Meissner response scenario. While the latter provides independent experimental evidence of induced triplet superconductivity inside the Ni-Ga bilayer, the former might serve as the first experimental hint of its potential microscopic physical origin.

cond-mat.supr-con↗

arXiv2022

Unconventional interlayer exchange coupling via chiral phonons in synthetic magnetic oxide heterostructures

Chiral symmetry breaking of phonons plays an essential role in emergent quantum phenomena owing to its strong coupling to spin degree of freedom. However, direct experimental evidence of the chiral phonon-spin coupling is lacking. In this study, we report a chiral phonon-mediated interlayer exchange interaction in atomically controlled ferromagnetic metal (SrRuO3)-nonmagnetic insulator (SrTiO3) heterostructures. Owing to the unconventional interlayer exchange interaction, we have observed rotation of magnetic moments as a function of nonmagnetic insulating spacer thickness, resulting in a spin spiral state. The chiral phonon-spin coupling is further confirmed by phonon Zeeman effects. The existence of the chiral phonons and their interplay with spins along with our atomic-scale heterostructure approach open a window to unveil the crucial roles of chiral phonons in magnetic materials.

cond-mat.str-el↗

arXiv2021

Mechanism of magnetic diode in artificial honeycomb lattice

Spin diode is important prerequisite to practical manifestation of spin electronics. Yet, a functioning magnetic diode at room temperature is still illusive. Here, we reveal diode-type phenomena due to magnetic charge mediated conduction in artificial honeycomb geometry, made of concave shape single domain permalloy element. We find that honeycomb lattice defies symmetry by populating vertices with low and high multiplicity magnetic charges, causing asymmetric magnetization, in applied current of opposite polarity. High multiplicity units create highly resistive network, thereby inhibiting magnetic charge dynamics propelled electrical conduction. However, practical realization of this effect requires modest demagnetization factor in constituting element. Concave structure fulfills the condition. Subsequently, magnetic diode behavior emerges across broad thermal range of $T$ = 40K - 300K. The finding is a departure from the prevailing notion of spin-charge interaction as the sole guiding principle behind spintronics. Consequently, a new vista, mediated by magnetic charge interaction, is envisaged for spintronic research

cond-mat.mes-hall↗

arXiv2021

Antiferromagnetic VdW Phase at the Interface of Sputtered Topological Insulator/Ferromagnet-Bi2Te3/Ni80Fe20 Heterostructures

Magnetic ordering in topological insulators (TI) is crucial for breaking time-reversal symmetry (TRS) and thereby opening a gap in the topological surface states (TSSs) [1-6], which is the key for realizing useful topological properties such as the quantum anomalous Hall (QAH) effect, axion insulator state and the topological magnetoelectric effect. Combining TIs with magnetic materials can be expected to yield interfaces [26-28] with unique topological and magnetic phases but such interfaces largely remain unexplored. Here, we report the discovery of a novel antiferromagnetic (AFM) Van der Waals (VdW) phase at the interface of a sputtered c-axis oriented TI/FM (Bi2Te3/Ni80Fe20) heterostructure due to the formation of a Ni-intercalated Bi2Te3 VdW interfacial layer. The TI/FM heterostructure is shown to possess a significant spontaneous exchange bias and the presence of an AFM order at the interface via measurements of the hysteresis loop as well as the observation of compensated magnetic moments at the interface using polarized neutron reflectometry (PNR). An in-depth analysis of the structural and chemical properties of the interfacial AFM phase was carried out using selected area electron diffraction (SAED), electron energy loss spectroscopy (EELS), and X-ray photoelectron spectroscopy (XPS). These studies show evidence of solid-state reaction between the intercalated Ni atoms and Bi2Te3 layers and of the formation of topologically nontrivial magnetic VdW compounds. The Néel temperature of the interfacial AFM phase is 63 K, which is higher than that of typical magnetic topological insulators [53]. Our study shows how industrial CMOS-process-compatible sputtered TI/FM heterostructures can provide a novel materials platform for exploring the emergence of interfacial topological magnetic phases and high-temperature topological magnetic states.

cond-mat.mtrl-sci↗

arXiv2021

Quantum disordered state of magnetic charges in nanoengineered honeycomb lattice

A quantum magnetic state due to magnetic charges is never observed, even though they are treated as quantum mechanical variable in theoretical calculations. Here, we demonstrate the occurrence of a novel quantum disordered state of magnetic charges in nanoengineered magnetic honeycomb lattice of ultra-small connecting elements. The experimental research, performed using spin resolved neutron scattering, reveals a massively degenerate ground state, comprised of low integer and energetically forbidden high integer magnetic charges, that manifests cooperative paramagnetism at low temperature. The system tends to preserve the degenerate configuration even under large magnetic field application. It exemplifies the robustness of disordered correlation of magnetic charges in 2D honeycomb lattice. The realization of quantum disordered ground state elucidates the dominance of exchange energy, which is enabled due to the nanoscopic magnetic element size in nanoengineered honeycomb. Consequently, an archetypal platform is envisaged to study quantum mechanical phenomena due to emergent magnetic charges.

cond-mat.mes-hall↗

arXiv2021

Magnetic charge's relaxation propelled electricity in two-dimensional magnetic honeycomb lattice

Emerging new concepts, such as magnetic charge dynamics in two-dimensional magnetic material, can provide novel mechanism for spin based electrical transport at macroscopic length. In artificial spin ice of single domain elements, magnetic charge's relaxation can create an efficient electrical pathway for conduction by generating fluctuations in local magnetic field that couple with conduction electrons spins. In a first demonstration, we show that the electrical conductivity is propelled by more than an order of magnitude at room temperature due to magnetic charge defects sub-picosecond relaxation in artificial magnetic honeycomb lattice. The direct evidence to the proposed electrical conduction mechanism in two-dimensional frustrated magnet points to the untapped potential for spintronic applications in this system.

cond-mat.mes-hall↗