Multiwavelength Raman investigation of mono- and few-layer MoS2 grown by Pulsed Laser Deposition on SiO2
Molybdenum disulfide (MoS$_2$) is a semiconductor whose vibrational and excitonic properties are highly sensitive to layer number and structural disorder. We demonstrate the growth of MoS$_2$ monolayers on inert, electronics-compatible SiO$_2$ substrates using room-temperature pulsed laser deposition (PLD). Control of the process parameters enables tuning from monolayer to multilayer films, which we investigate by multiwavelength Raman spectroscopy. The evolution of the Raman-shift difference between the $E_{2g}^{1}$ and $A_{1g}$ modes, combined with an assessment of defect density, tracks film growth as a function of the number of deposition laser pulses. Although excitonic effects strongly influence the optical response of two-dimensional transition-metal dichalcogenides, experimental reports of symmetry-selective exciton-phonon coupling remain limited. We provide experimental evidence of symmetry-dependent exciton-phonon coupling in PLD-grown monolayer MoS$_2$. Specifically, we observe modulation of the resonant behaviour of the out-of-plane $A_{1g}$ and in-plane $E_{2g}^{1}$ modes, related to their different coupling to A excitons, predominantly derived from Mo $d_{z^2}$ orbitals, and C excitons, characterized by mixed orbital contributions from Mo $d_{z^2}$ and S $p_x$ and $p_y$ states. Comparison with mechanically exfoliated monolayers reveals the role of growth-induced defects in modulating these interactions. These findings establish room-temperature PLD as a viable approach for growing two-dimensional MoS$_2$ on inert, electronics-compatible substrates and provide insight into the interplay between excitonic resonances and growth-induced disorder in two-dimensional MoS$_2$.