Deposition and Growth of the AlCoCuFeNi High-Entropy Alloy Thin Film: Molecular Dynamics Simulation
The growth of a thin film of a high-entropy AlCoCuFeNi alloy on a silicon (100) substrate was studied using molecular dynamics modeling. The simulation was carried out using the embedded atom model to describe the interactions among Al, Co, Cu, Ni, and Fe atoms. The interaction between Al, Co, Cu, Fe, Ni atoms and the Si substrate was modeled using the Lennard-Jones potential, while the interaction between silicon atoms was described using the Stillinger-Weber potential. The total simulation time was 50 ns. It was found that small clusters were formed at the first stage of deposition and that crystallization started after approximately 5 ns of simulation, when the characteristic cluster size was about 2 nm. At the end of the simulation, after 50 ns of modeling, the simulated film contained face-centered cubic, body-centered cubic, hexagonal close-packed, and amorphous phases. Analysis of the radial distribution function made it possible to determine nearest-neighbor distances and estimate the lattice parameters of these phases.