arXiv subjects

Vanita Srinivasa

Publications and source records attributed to Vanita Srinivasa.

6 recordsLinked to original sources

arXiv2019

Spin-orbit Interactions for Singlet-Triplet Qubits in Silicon

Spin-orbit coupling is relatively weak for electrons in bulk silicon, but enhanced interactions are reported in nanostructures such as the quantum dots used for spin qubits. These interactions have been attributed to various dissimilar interface effects, including disorder or broken crystal symmetries. In this Letter, we use a double-quantum-dot qubit to probe these interactions by comparing the spins of separated singlet-triplet electron pairs. We observe both intravalley and intervalley mechanisms, each dominant for [110] and [100] magnetic field orientations, respectively, that are consistent with a broken crystal symmetry model. We also observe a third spin-flip mechanism caused by tunneling between the quantum dots. This improved understanding is important for qubit uniformity, spin control and decoherence, and two-qubit gates.

cond-mat.mes-hall↗

arXiv2017

Probing low noise at the MOS interface with a spin-orbit qubit

The silicon metal-oxide-semiconductor (MOS) material system is technologically important for the implementation of electron spin-based quantum information technologies. Researchers predict the need for an integrated platform in order to implement useful computation, and decades of advancements in silicon microelectronics fabrication lends itself to this challenge. However, fundamental concerns have been raised about the MOS interface (e.g. trap noise, variations in electron g-factor and practical implementation of multi-QDs). Furthermore, two-axis control of silicon qubits has, to date, required the integration of non-ideal components (e.g. microwave strip-lines, micro-magnets, triple quantum dots, or introduction of donor atoms). In this paper, we introduce a spin-orbit (SO) driven singlet-triplet (ST) qubit in silicon, demonstrating all-electrical two-axis control that requires no additional integrated elements and exhibits charge noise properties equivalent to other more model, but less commercially mature, semiconductor systems. We demonstrate the ability to tune an intrinsic spin-orbit interface effect, which is consistent with Rashba and Dresselhaus contributions that are remarkably strong for a low spin-orbit material such as silicon. The qubit maintains the advantages of using isotopically enriched silicon for producing a quiet magnetic environment, measuring spin dephasing times of 1.6 $μ$s using 99.95% $^{28}$Si epitaxy for the qubit, comparable to results from other isotopically enhanced silicon ST qubit systems. This work, therefore, demonstrates that the interface inherently provides properties for two-axis control, and the technologically important MOS interface does not add additional detrimental qubit noise.

cond-mat.mes-hall↗

arXiv2011

Spatial Analogue of Quantum Spin Dynamics via Spin-Orbit Interaction

We map electron spin dynamics from time to space in quantum wires with spatially uniform and oscillating Rashba spin-orbit coupling. The presence of the spin-orbit interaction introduces pseudo-Zeeman couplings of the electron spins to effective magnetic fields. We show that by periodically modulating the spin-orbit coupling along the quantum wire axis, it is possible to create the spatial analogue of spin resonance, without the need for any real magnetic fields. The mapping of time-dependent operations onto a spatial axis suggests a new mode for quantum information processing in which gate operations are encoded into the band structure of the material. We describe a realization of such materials within nanowires at the interface of LaAlO3/SrTiO3 heterostructures.

cond-mat.mes-hall↗

arXiv2011

Quantum transport in oxide nanostructures

We describe magnetotransport experiments performed on Hall crosses made from quantum wires at LaAlO3/SrTiO3 interfaces. Shubnikov-de Haas oscillations measured in a 14-nm wide structure exhibit modulations that are consistent with spin-orbit coupling or valley degeneracies. Hall measurements performed on the 6 nm-wide Hall cross reveal dissipative coupling to magnetic phases. Hall plateaus are observed that deviate significantly from two-dimensional quantum Hall counterparts. Non-monotonic dips in the Hall resistance are attributed to one-dimensional confinement and spin-orbit coupling.

cond-mat.mes-hall↗

arXiv2009

Tailoring Effective Exchange Interactions via Domain Walls in Coupled Heisenberg Rings

The nature of the exchange coupling variation in an antiferromagnetic spin-1/2 system can be used to tailor its ground-state properties. In particular, dimerized Heisenberg rings containing domain walls have localized states which can serve as "flying spin qubits" when the domain walls are moved. We show theoretically that, when two of these rings are coupled, the movement of the domain walls leads to modulation of the effective exchange interaction between the qubits. Appropriately chosen configurations of domain walls can give rise to ferromagnetic effective exchange. We describe how these spin rings may be used as basic building blocks to construct quantum spin systems whose properties are tunable by virtue of the exchange variation within the rings.

quant-ph↗

arXiv2006

Flying Spin Qubits

We present a method for encoding and transporting qubits within a dimerized Heisenberg spin-1/2 chain. Logical qubits are localized at the domain walls that separate the two possible dimerized states. The domain walls can be moved to produce "flying spin qubits". The topological nature of these states makes them stable against a wide class of perturbations. Pairs of domain walls can be used to generate Einstein-Podolsky-Rosen pairs of entangled qubits. We discuss speed limitations within an exactly solvable three-spin model and describe a possible physical realization using quantum dot arrays.

quant-ph↗