arXiv subjects

Varun Raghunathan

Publications and source records attributed to Varun Raghunathan.

11 recordsLinked to original sources

arXiv2026

Large Alphabet Set Time-bin Encoded Measurement-Device-Independent Quantum Key Distribution

We report on the experimental demonstration of an expanded basis set (called here as alphabet set) time-bin encoded measurement-device-independent quantum key distribution (MDI-QKD). While MDI-QKD is known to prevent detector-side attacks, it inherently suffers from reduced secret key rate (SKR) due to coincidence measurements performed at the central measurement node. To address this limitation, we encode states across multiple time-bins thereby increasing possible coincidence events and mapping each successful alphabet exchange to multiple bits, thereby increasing the information capacity per alphabet transmitted. Using a standard MDI-QKD set-up with real fiber spools and single-photon avalanche photodetectors, we achieve SKRs of 401 (133.6) bps and 28 (10.7) bps for 8 (2) encoded states for distances of 2 and 50 km, respectively, resulting in 3- and 2.63-times improvement, respectively when compared to the conventional two-state encoding. Furthemore, the large alphabet set MDIQKD results are compared with a similar encoding scheme implemented for coherent-one-way (COW) protocol. This comparison reveals a clear advantage of using a larger alphabet set for MDI-QKD, where increased Z-basis coincidence events yields increased SKR. These results provide important insights into the scalability of MDI-QKD key-rates without requiring additional hardware modifications, paving the way for next-generation, quantum key distribution networks.

quant-ph↗

arXiv2025

Observation of moir\'e trapped biexciton through sub-diffraction-limit probing using hetero-bilayer on nanopillar

The ability to tune the degree of interaction among particles at the nanoscale is highly intriguing. The spectroscopic signature of such interaction is often subtle and requires special probes to observe. To this end, inter-layer excitons trapped in the periodic potential wells of a moir\'e superlattice offer rich interaction physics, specifically due to the presence of both attractive and repulsive components in the interaction. Here we show that the Coulomb force between two inter-layer excitons switches from repulsive to attractive when the length scale reduces from inter-moir\'e-pocket to intra-moir\'e-pocket in a WS$_2$/WSe$_2$ hetero-bilayer - thanks to the complex competition between direct and exchange interaction. The finding is a departure from the usual notion of repelling inter-layer excitons due to layer polarization. This manifests as the simultaneous observation of an anomalous superlinear power-law of moir\'e exciton and a stabilization of moir\'e trapped biexciton. The experimental observation is facilitated by placing the hetero-bilayer on a polymer-nanopillar/gold-film stack which significantly reduces the inhomogeneous spectral broadening by selectively probing a smaller ensemble of moir\'e pockets compared with a flat sample. This creates an interesting platform to explore interaction among moir\'e trapped excitons and higher order quasiparticles.

cond-mat.mes-hall↗

arXiv2024

Dispersion Pre-compensation in Asymmetric Measurement Device Independent Quantum Key Distribution for Improved Secret Key Generation

In Measurement-Device-Independent Quantum Key Distribution (MDI-QKD), key rates are significantly reduced due to dispersion in asymmetric channels. This work addresses this issue by utilizing intensity and phase modulators for dispersion compensation, thus avoiding the additional losses associated with dispersion-compensating fibers (DCFs). This approach enhances key rates and enables longer communication distances.

quant-ph↗

arXiv2024

Increased Secret Key Throughput in Twin Field Quantum Key Distribution using 4x4 Beam Splitter Detection Network

Twin Field Quantum key Distribution (TFQKD) has attracted recent interest due to the higher secret key capacity better than the fundamental repeaterless limit and extending the achievable distance. The key generation in TFQKD is based on the post selection of randomized phase slices. This paper describes a technique for enhancing the probability of choosing the phase slices by using four detectors at Charlie end placed after a 4x4 port beam-splitter network. Using theoretical modelling of secret keyrate and simulations using StrawberryFields, we observe an increase in secret key throughput when compared to conventional TFQKD.

physics.optics↗

arXiv2024

Emergent inhomogeneity and non-locality in a graphene field-effect transistor on a near-parallel moire superlattice of transition metal dichalcogenides

At near-parallel orientation, twisted bilayer of transition metal dichalcogenides exhibit inter-layer charge transfer-driven out-of-plane ferroelectricity that may lead to unique electronic device architectures. Here we report detailed electrical transport in a dual-gated graphene field-effect transistor placed on 3R stacked twisted bilayer of WSe2 at a twist angle of 2.1 degree. We observe hysteretic transfer characteristics and an emergent charge inhomogeneity with multiple local Dirac points as the electric displacement field (D) is increased. Concomitantly, we also observe a strong non-local voltage signal at D = 0 V/nm that decreases rapidly with increasing D. A linear scaling of the non-local signal with longitudinal resistance suggests edge mode transport, which we attribute to the breaking of valley symmetry of the graphene channel due to the spatially fluctuating electric field from the moire domains of the underlying twisted WSe2. A quantitative analysis connecting the non-locality and channel inhomogeneity suggests emergence of finite-size domains in the graphene channel that modulate the charge and the valley currents simultaneously. This work underlines efficient control and impact of interfacial ferroelectricity that can trigger a new genre of devices for twistronic applications.

cond-mat.mes-hall↗

arXiv2023

Harmonic to anharmonic tuning of moir\'e potential leading to unconventional Stark effect and giant dipolar repulsion in WS$_2$/WSe$_2$ heterobilayer

Excitonic states trapped in harmonic moir\'e wells of twisted heterobilayers is an intriguing testbed. However, the moir\'e potential is primarily governed by the twist angle, and its dynamic tuning remains a challenge. Here we demonstrate anharmonic tuning of moir\'e potential in a WS$_2$/WSe$_2$ heterobilayer through gate voltage and optical power. A gate voltage can result in a local in-plane perturbing field with odd parity around the high-symmetry points. This allows us to simultaneously observe the first (linear) and second (parabolic) order Stark shift for the ground state and first excited state, respectively, of the moir\'e trapped exciton - an effect opposite to conventional quantum-confined Stark shift. Depending on the degree of confinement, these excitons exhibit up to twenty-fold gate-tunability in the lifetime ($100$ to $5$ ns). Also, exciton localization dependent dipolar repulsion leads to an optical power-induced blueshift of $\sim$1 meV/$\mu$W - a five-fold enhancement over previous reports.

cond-mat.mes-hall↗

arXiv2022

Tuning exciton complexes in twisted bilayer WSe2 at intermediate misorientation

Twist angle modifies the band alignment, screening, and interlayer (IL) coupling in twisted bilayers (tBLs) of transition metal dichalcogenides. Intermediate misorientation (twist angles > 15 degrees) bilayers (BLs) offer a unique opportunity to tune excitonic behavior within these concurrent physical mechanisms but are seldom studied. In this paper, we measure many-body excitonic complexes in monolayer (ML), natural BL, and tBL WSe2. Neutral biexciton (XX) is observed in tBL, while being undetected in nonencapsulated ML and BL, demonstrating unique effects of disorder screening in tBLs. The XX as well as charged biexciton are robust to thermal dissociation and are controllable by electrostatic doping. Vanishing of momentum-indirect IL excitons with increasing electron doping is demonstrated in tBL, resulting from the near alignment of Q-K and K-K valleys. Intermediate misorientation samples offer a high degree of control of excitonic complexes while offering possibilities for studying exciton-phonon coupling, band alignment, and screening.

physics.optics↗

arXiv2020

Origin of selective enhancement of sharp defect emission lines in monolayer WSe$_2$ on rough metal substrate

The defect states in atomically thin layers of transition metal dichalcogenides are promising candidates for single photon emission. However, the brightness of such quantum emission is often weak, and is accompanied with undesirable effects like spectral diffusion and strong background emission. By placing a monolayer WSe$_2$ directly on a rough gold substrate, here we show a selective enhancement of sharp defect-bound exciton peaks, coupled with a suppressed spectral diffusion and strong quenching of background luminescence. By combining the experimental data with detailed electromagnetic simulations, we reveal that such selective luminescence enhancement originates from a combination of the Purcell effect and a wavelength dependent increment of the excitation electric field at the tips of tall rough features, coupled with a localized strain induced exciton funneling effect. Notably, insertion of a thin hexagonal Boron Nitride (hBN) sandwich layer between WSe$_2$ and the Au film results in a strong enhancement of the background luminescence, obscuring the sharp defect peaks. The findings demonstrate a simple strategy of using monolayer WSe$_2$ supported by thin metal film that offers a possibility of achieving quantum light sources with high purity, high brightness, and suppressed spectral diffusion.

physics.app-ph↗

arXiv2019

Strong Single- and Two-Photon Luminescence Enhancement by Nonradiative Energy Transfer across Layered Heterostructure

The strong light-matter interaction in monolayer transition metal dichalcogenides (TMDs) is promising for nanoscale optoelectronics with their direct band gap nature and the ultra-fast radiative decay of the strongly bound excitons these materials host. However, the impeded amount of light absorption imposed by the ultra-thin nature of the monolayers impairs their viability in photonic applications. Using a layered heterostructure of a monolayer TMD stacked on top of strongly absorbing, non-luminescent, multi-layer SnSe2, we show that both single-photon and two-photon luminescence from the TMD monolayer can be enhanced by a factor of 14 and 7.5, respectively. This is enabled through inter-layer dipole-dipole coupling induced non-radiative Forster resonance energy transfer (FRET) from SnSe2 underneath which acts as a scavenger of the light unabsorbed by the monolayer TMD. The design strategy exploits the near-resonance between the direct energy gap of SnSe2 and the excitonic gap of monolayer TMD, the smallest possible separation between donor and acceptor facilitated by van der Waals heterojunction, and the in-plane orientation of dipoles in these layered materials. The FRET driven uniform single- and twophoton luminescence enhancement over the entire junction area is advantageous over the local enhancement in quantum dot or plasmonic structure integrated 2D layers, and is promising for improving quantum efficiency in imaging, optoelectronic, and photonic applications.

cond-mat.mes-hall↗

arXiv2007

Demonstration of a mid infrared silicon Raman amplifier

We demonstrate for the first time a mid infrared silicon Raman amplifier. Amplification of 12 dB is reported for a signal at 3.39 micron wavelength. The active medium was a 2.5 cm long silicon sample that was pumped with 5ns pulses at 2.88 micron. The absence of the nonlinear losses which severely limit the performance of silicon Raman devices in the near infrared combined with unsurpassed crystal quality, high thermal conductivity render silicon a very attractive Raman medium. Such a technology can potentially extend silicon photonics application beyond data communication in the near infrared and into the mid infrared world of remote sensing, biochemical detection and laser medicine.

physics.optics↗

arXiv2006

Self-imaging silicon Raman amplifier

We propose a new type of waveguide optical amplifier. The device consists of collinearly propagating pump and amplified Stokes beams with periodic imaging of the Stokes beam due to the Talbot effect. The application of this device as an Image preamplifier for Mid Wave Infrared (MWIR) remote sensing is discussed and its performance is described. Silicon is the preferred material for this application in MWIR due to its excellent transmission properties, high thermal conductivity, high damage threshold and the mature fabrication technology. In these devices, the Raman amplification process also includes four-wave-mixing between various spatial modes of pump and Stokes signals. This phenomenon is unique to nonlinear interactions in multimode waveguides and places a limit on the maximum achievable gain, beyond which the image begins to distort. Another source of image distortion is the preferential amplification of Stokes modes that have the highest overlap with the pump. These effects introduce a tradeoff between the gain and image quality. We show that a possible solution to this trade-off is to restrict the pump into a single higher order waveguide mode.

physics.optics↗