arXiv subjects

Vasily Cherepanov

Publications and source records attributed to Vasily Cherepanov.

11 recordsLinked to original sources

arXiv2026

A miniature evaporator for in-operando deposition of isolated atoms in a low-temperature scanning tunneling microscope

Depositing dilute atomic ensembles onto cold samples is challenging in low-temperature scanning tunneling microscopes (STM) because radiation shields and restricted internal geometries often preclude a direct deposition path, particularly in instruments designed for millikelvin operation. We present a compact, milliwatt-range evaporation source fabricated from a commercial miniature incandescent lamp and integrated directly into a millikelvin STM head. The exposed tungsten filament is coated with a micrometre-thick Fe film and positioned about 1 cm from the sample. We deposit isolated Fe atoms onto MgO/Ag(100) while operating the microscope near 5 K. Evaporation increases the STM-body temperature by only about 2 K, and the same nanoscopic surface region can be readily scanned after deposition with a lateral displacement of less than 5 nm. Differential-conductance spectra displaying symmetric inelastic steps near $\pm$14 mV identify the deposited atoms on MgO as Fe. From STM images, we estimate a local deposition flux of $1.5\times10^{-5}~\mathrm{nm^{-2}\,s^{-1}}$, corresponding to a nominal evaporator lifetime of ~150 h. The fixed evaporator enables repeated low-flux deposition without a room-temperature line of sight, the need for movable radiation shields, or mechanical evaporator access after cooldown, while preserving access to the same atomic-scale surface region before and after deposition.

cond-mat.mes-hall↗

arXiv2026

Imaging the transition from diffusive to Landauer resistivity dipoles

A point-like defect in a uniform current-carrying conductor induces a dipole in the electrochemical potential, which counteracts the original transport field. If the mean free path of the carriers is much smaller than the size of the defect, the dipole results from the purely diffusive motion of the carriers around the defect. In the opposite limit, ballistic carriers scatter from the defect -- for this situation, Rolf Landauer postulated the emergence of residual resistivity dipoles that are independent of the defect size and thus impose a fundamental limit on the resistance of the parent conductor. Here, we study resistivity dipoles around holes of different sizes in two-dimensional Bi films on Si(111). Using scanning tunneling potentiometry to image the dipoles, we find a crossover from linear to constant scaling behavior of their amplitudes with defect size, manifesting the transition from diffusive to Landauer dipoles. The extracted parameters of the transition allow us to estimate the Fermi wave vector and the carrier mean free path in our Bi films.

cond-mat.mes-hall↗

arXiv2022

Probing edge state conductance in ultra-thin topological insulator films

Quantum spin Hall (QSH) insulators have unique electronic properties, comprising a band gap in their two-dimensional interior and one-dimensional spin-polarized edge states in which current flows ballistically. In scanning tunneling microscopy (STM), the edge states manifest themselves as a localized density of states. However, there is a significant research gap between the observation of edge states in nanoscale spectroscopy, and the detection of ballistic transport in edge channels which typically relies on transport experiments with microscale lithographic contacts. Here, we study few-layer films of the three-dimensional topological insulator (Bi$_{x}$Sb$_{1-x})_2$Te$_3$, for which a topological transition to a two-dimensional topological QSH insulator phase has been proposed. Indeed, an edge state in the local density of states is observed within the band gap. Yet, in nanoscale transport experiments with a four-tip STM, 2 and 3 quintuple layer films do not exhibit a ballistic conductance in the edge channels. This demonstrates that the detection of edge states in spectroscopy can be misleading with regard to the identification of a QSH phase. In contrast, nanoscale multi-tip transport experiments are a robust method for effectively pinpointing ballistic edge channels, as opposed to trivial edge states, in quantum materials.

cond-mat.mes-hall↗

arXiv2021

Lifting the spin-momentum locking in ultra-thin topological insulator films

Three-dimensional (3D) topological insulators (TIs) are known to carry 2D Dirac-like topological surface states in which spin-momentum locking prohibits backscattering. When thinned down to a few nanometers, the hybridization between the topological surface states at the top and bottom surfaces results in a topological quantum phase transition, which can lead to the emergence of a quantum spin Hall phase. Here, we study the thickness-dependent transport properties across the quantum phase transition on the example of (Bi$_{0.16}$Sb$_{0.84}$)$_2$Te$_3$ films, with a four-tip scanning tunnelling microscope. Our findings reveal an exponential drop of the conductivity below the critical thickness. The steepness of this drop indicates the presence of spin-conserving backscattering between the top and bottom surface states, effectively lifting the spin-momentum locking and resulting in the opening of a gap at the Dirac point. Our experiments provide crucial steps towards the detection of quantum spin Hall states in transport measurements.

cond-mat.mes-hall↗

arXiv2021

A millikelvin scanning tunneling microscope in ultra-high vacuum with adiabatic demagnetization refrigeration

We present the design and performance of an ultra-high vacuum (UHV) scanning tunneling microscope (STM) that uses adiabatic demagnetization of electron magnetic moments for controlling its operating temperature in the range between 30 mK and 1 K with the accuracy of up to 7 $μ$K. The time available for STM experiments at 50 mK is longer than 20 h, at 100 mK about 40 h. The single-shot adiabatic demagnetization refrigerator (ADR) can be regenerated automatically within 7 hours while keeping the STM temperature below 5 K. The whole setup is located in a vibrationally isolated, electromagnetically shielded laboratory with no mechanical pumping lines penetrating through its isolation walls. The 1K pot of the ADR cryostat can be operated silently for more than 20 days in a single-shot mode using a custom-built high-capacity cryopump. A high degree of vibrational decoupling together with the use of a specially-designed minimalistic STM head provides an outstanding mechanical stability, demonstrated by the tunneling current noise, STM imaging, and scanning tunneling spectroscopy measurements all performed on atomically clean Al(100) surface.

physics.ins-det↗

arXiv2020

Parasitic conduction channels in topological insulator thin films

Thin films of topological insulators (TI) usually exhibit multiple parallel conduction channels for the transport of electrical current. Beside the topologically protected surface states (TSS), parallel channels may exist, namely the interior of the not-ideally insulating TI film, the interface layer to the substrate, and the substrate itself. To be able to take advantage of the auspicious transport properties of the TSS, the influence of the parasitic parallel channels on the total current transport has to be minimized. Because the conductivity of the interior (bulk) of the thin TI film is difficult to access by measurements, we propose here an approach for calculating the mobile charge carrier concentration in the TI film. To this end, we calculate the near-surface band bending using parameters obtained experimentally from surface-sensitive measurements, namely (gate-dependent) four-point resistance measurements and angle-resolved photoelectron spectroscopy (ARPES). While in most cases another parameter in the calculations, i.e. the concentration of unintentional dopants inside the thin TI film, is unknown, it turns out that in the thin-film limit the band bending is largely independent of the dopant concentration in the film. Thus, a well-founded estimate of the total mobile charge carrier concentration and the conductivity of the interior of the thin TI film proves possible. Since the interface and substrate conductivities can be measured by a four-probe conductance measurement prior to the deposition of the TI film, the total contribution of all parasitic channels, and therefore also the contribution of the vitally important TSS, can be determined reliably.

cond-mat.mes-hall↗

arXiv2018

Surface structures of tellurium on Si(111)-(7x7) studied by low-energy electron diffraction and scanning tunneling microscopy

The Te-covered Si(111) surface has received recent interest as a template for the epitaxy of van der Waals (vdW) materials, e.g. Bi$_2$Te$_3$. Here, we report the formation of a Te buffer layer on Si(111)$-$(7$\times$7) by low-energy electron diffraction (LEED) and scanning tunneling microscopy (STM). While deposition of several monolayer (ML) of Te on the Si(111)$-$(7$\times$7) surface at room temperature results in an amorphous Te layer, increasing the substrate temperature to $770\rm\,K$ results in a weak (7$\times$7) electron diffraction pattern. Scanning tunneling microscopy of this surface shows remaining corner holes from the Si(111)$-$(7$\times$7) surface reconstruction and clusters in the faulted and unfaulted halves of the (7$\times$7) unit cells. Increasing the substrate temperature further to $920\rm\,K$ leads to a Te/Si(111)$-(2\sqrt3\times2\sqrt{3})\rm R30^{\circ}$ surface reconstruction. We find that this surface configuration has an atomically flat structure with threefold symmetry.

cond-mat.mes-hall↗

arXiv2018

Low Vibration Laboratory with a Single-Stage Vibration Isolation for Microscopy Applications

The construction and the vibrational performance of a low vibration laboratory for microscopy applications comprising a 100 ton floating foundation supported by passive pneumatic isolators (air springs), which rest themselves on a 200 ton solid base plate is discussed. The optimization of the air spring system lead to a vibration level on the floating floor below that induced by an acceleration of 10 ng for most frequencies. Additional acoustic and electromagnetic isolation is accomplished by a room-in-room concept.

physics.ins-det↗

arXiv2017

Electrical resistance of individual defects at a topological insulator surface

Three-dimensional topological insulators host surface states with linear dispersion, which manifest as a Dirac cone. Nanoscale transport measurements provide direct access to the transport properties of the Dirac cone in real space and allow the detailed investigation of charge carrier scattering. Here, we use scanning tunnelling potentiometry to analyse the resistance of different kinds of defects at the surface of a (Bi0.53Sb0.47)2Te3 topological insulator thin film. The largest localized voltage drop we find to be located at domain boundaries in the topological insulator film, with a resistivity about four times higher than that of a step edge. Furthermore, we resolve resistivity dipoles located around nanoscale voids in the sample surface. The influence of such defects on the resistance of the topological surface state is analysed by means of a resistor network model. The effect resulting from the voids is found to be small compared to the other defects.

cond-mat.mes-hall↗

arXiv2016

Surface Conductivity of Si(100) and Ge(100) Surfaces Determined from Four-Point Transport Measurements Using an Analytical N-Layer Conductance Model

An analytical N-layer model for charge transport close to a surface is derived from the solution of Poisson's equation and used to describe distance-dependent electrical four-point measurements on the microscale. As the N-layer model comprises a surface channel, multiple intermediate layers and a semi-infinite bulk, it can be applied to semiconductors in combination with a calculation of the near-surface band-bending to model very precisely the measured four-point resistance on the surface of a specific sample and to extract a value for the surface conductivity. For describing four-point measurements on sample geometries with mixed 2D-3D conduction channels often a very simple parallel-circuit model has so far been used in the literature, but the application of this model is limited, as there are already significant deviations, when it is compared to the lowest possible case of the N-layer model, i.e. the 3-layer model. Furthermore, the N-layer model is applied to published distance-dependent four-point resistance measurements obtained with a multi-tip scanning tunneling microscope (STM) on Germanium(100) and Silicon(100) with different bulk doping concentrations resulting in the determination of values for the surface conductivities of these materials.

cond-mat.mes-hall↗

arXiv2015

Surface and Step Conductivities on Si(111) Surfaces

Four-point measurements using a multi-tip scanning tunneling microscope (STM) are carried out in order to determine surface and step conductivities on Si(111) surfaces. In a first step, distance-dependent four-point measurements in the linear configuration are used in combination with an analytical three-layer model for charge transport to disentangle the 2D surface conductivity from non-surface contributions. A termination of the Si(111) surface with either Bi or H results in the two limiting cases of a pure 2D or 3D conductance, respectively. In order to further disentangle the surface conductivity of the step-free surface from the contribution due to atomic steps, a square four-probe configuration is applied as function of the rotation angle. In total this combined approach leads to an atomic step conductivity of $σ_\mathrm{step} = (29 \pm 9)$ $\mathrmΩ^{-1} \mathrm{m}^{-1}$ and to a step-free surface conductivity of $σ_\mathrm{surf} = (9 \pm 2) \cdot 10^{-6}\,\mathrmΩ^{-1}/\square$ for the Si(111)-(7$\times$7) surface.

cond-mat.mes-hall↗